JPS637027B2 - - Google Patents
Info
- Publication number
- JPS637027B2 JPS637027B2 JP57172660A JP17266082A JPS637027B2 JP S637027 B2 JPS637027 B2 JP S637027B2 JP 57172660 A JP57172660 A JP 57172660A JP 17266082 A JP17266082 A JP 17266082A JP S637027 B2 JPS637027 B2 JP S637027B2
- Authority
- JP
- Japan
- Prior art keywords
- chip
- lead rod
- recess
- manufacturing
- rod
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 39
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 33
- 239000004065 semiconductor Substances 0.000 claims description 19
- 229910052759 nickel Inorganic materials 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 241000237858 Gastropoda Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GXDVEXJTVGRLNW-UHFFFAOYSA-N [Cr].[Cu] Chemical compound [Cr].[Cu] GXDVEXJTVGRLNW-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Description
【発明の詳細な説明】
この発明は、半導体素子の構成部品の製法に関
するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing components of a semiconductor device.
タングステン、モリブデン等の高融点金属でつ
くられた１対のチツプ（スラグ）の間にシリコン
ウエハを介装し、上記チツプの外側端部にはそれ
ぞれ金属リード棒を接合したダイオードが知られ
ている。上記チツプとリード棒とを接合してなる
半導体用部品の製造に際して従来採用されてきた
接合方法は、チツプの端面にリード棒を突き合わ
せてスポツト溶接する方法であつたので、両者の
接合強度が低く、使用中にリード棒が脱落しやす
いという大きな欠点があつた。 A diode is known in which a silicon wafer is interposed between a pair of chips (slugs) made of a high-melting point metal such as tungsten or molybdenum, and metal lead rods are connected to the outer ends of each chip. . The bonding method conventionally used to manufacture semiconductor parts by bonding the chip and lead rod described above was to spot-weld the lead rod against the end face of the chip, so the bonding strength between the two was low. However, a major drawback was that the lead rod easily fell off during use.
この発明は上記事情に鑑みてなされたもので、
チツプとリード棒とが強固に接合された半導体用
部品の製法を提供するものであり、これについて
以下に説明する。 This invention was made in view of the above circumstances,
The present invention provides a method for manufacturing semiconductor components in which a chip and a lead rod are firmly bonded, and this will be explained below.
本発明にかかる半導体部品の製法は、芯部に凹
部を有する円柱状の高融点金属チツプを製造する
工程と、表面にニツケル層が形成された金属リー
ド棒を製造する工程と、該リード棒の端部を前記
チツプの凹部に嵌合する工程と、リード棒を嵌合
したチツプを加熱してリード棒表面のニツケル層
をチツプの凹部内面に拡散させる工程からなり、
チツプとリード棒とが一体に接合された半導体用
部品を得ることを特徴としている。以下、図面に
あらわされた実施例について説明する。 The method for manufacturing a semiconductor component according to the present invention includes a step of manufacturing a cylindrical high melting point metal chip having a recessed portion in the core, a step of manufacturing a metal lead rod having a nickel layer formed on the surface, and a step of manufacturing the metal lead rod with a nickel layer formed on the surface. It consists of a step of fitting the end portion into the recess of the chip, and a step of heating the chip with the lead rod fitted to diffuse the nickel layer on the surface of the lead rod into the inner surface of the recess of the chip,
The present invention is characterized by obtaining a semiconductor component in which a chip and a lead rod are integrally joined. The embodiments shown in the drawings will be described below.
この半導体用部品１は、タングステン、モリブ
デン等の高融点金属材料でつくられたチツプ２
と、金属製のリード棒３を接合一体化してなる。
チツプ２は、第１図に示す如く、芯部に軸方向の
凹部４をそなえた円柱体として形成されている。
このようなチツプ２は、例えば原料であるモリブ
デン等の金属粉末を自動プレス機等で加圧成形
し、環元雰囲気中または真空中で焼結する方法等
で製造することができる。このように粉末成形時
に金型で凹部４を成形する場合は、該凹部に金型
抜取り用の抜きテーパがつき、開口側が孔底側よ
りもわずかに径が大きくなるのが普通である。な
お、凹部４は焼結後に穿設してもよく、チツプ２
自体を塑性加工により成形してもよい。図示例で
は、凹部４がめくら穴として形成されているが、
これを貫通孔として形成してもよい。 This semiconductor component 1 includes a chip 2 made of a high melting point metal material such as tungsten or molybdenum.
and a metal lead rod 3 are integrally joined.
As shown in FIG. 1, the chip 2 is formed as a cylindrical body having an axial recess 4 in its core.
Such a chip 2 can be manufactured by, for example, a method in which metal powder such as molybdenum, which is a raw material, is pressure-molded using an automatic press or the like, and then sintered in a ring atmosphere or in a vacuum. When the recess 4 is formed using a metal mold during powder molding, the recess is usually tapered for removal from the mold, and the opening side is usually slightly larger in diameter than the hole bottom side. Note that the recess 4 may be formed after sintering, and the recess 4 may be formed after sintering.
The material itself may be formed by plastic working. In the illustrated example, the recess 4 is formed as a blind hole, but
This may be formed as a through hole.
リード棒３は、銅、銅合金（例えば、銅−ジル
コン、銅−クロム）その他の金属材料でつくられ
た棒体３ａの表面にニツケル層３ｂを形成してな
る。このようなニツケル層３ｂは、例えば公知の
ニツケルメツキ法によつて容易に形成することが
できる。ニツケル層３ｂの厚みは、５ミクロン
（μｍ）以上とするのが好ましく、15〜20ミクロ
ンとするのが更に好ましい。なお、リード棒３と
してニツケル棒を使用する場合は、上記ニツケル
メツキは不要である。 The lead rod 3 is formed by forming a nickel layer 3b on the surface of a rod body 3a made of copper, copper alloy (for example, copper-zircon, copper-chromium) or other metal material. Such a nickel layer 3b can be easily formed by, for example, a known nickel plating method. The thickness of the nickel layer 3b is preferably 5 microns (μm) or more, more preferably 15 to 20 microns. Note that when a nickel rod is used as the lead rod 3, the above-mentioned nickel plating is not necessary.
上記リード棒３の先端部をチツプ２の凹部４に
挿入し、加熱処理を施す。チツプ２の凹部４とリ
ード棒３とのハメアイは、リード棒３の外周部が
凹部内面に密着するようなものとする必要があ
り、リード棒３を上記凹部４に圧入するのが好ま
しい。第３図は、リード棒３の径よりも大径の凹
部４を形成し、その開口縁部に内側に突出するバ
リ状の突出部５を形成して、リード棒３の先端部
を凹部４内に据え込んだ例をあらわす。このよう
な突出部５は、例えばチツプ２をバレル研磨（と
もずり）することによつて形成することができ
る。このように、リード棒３をチツプの凹部４内
に据え込むこととすれば、チツプ２とリード棒３
の接合強度はきわめて強固なものとなる。 The tip of the lead rod 3 is inserted into the recess 4 of the chip 2 and subjected to heat treatment. The fit between the recess 4 of the chip 2 and the lead rod 3 must be such that the outer periphery of the lead rod 3 comes into close contact with the inner surface of the recess, and it is preferable that the lead rod 3 is press-fitted into the recess 4. In FIG. 3, a recess 4 having a diameter larger than the diameter of the lead rod 3 is formed, and a burr-like projection 5 is formed on the opening edge of the recess 4, and the tip of the lead rod 3 is inserted into the recess 4. Shows an example of internalization. Such a protrusion 5 can be formed, for example, by barrel polishing the chip 2. In this way, if the lead rod 3 is installed in the recess 4 of the chip, the chip 2 and the lead rod 3
The bonding strength is extremely strong.
つぎに、リード棒３を挿入したチツプに加熱処
理を施す。この加熱処理は、リード棒表面層のニ
ツケルをチツプ２の凹部４内壁部に拡散させるた
めのものであり、加熱温度は700〜1000℃、より
好ましくは750〜800℃とするのがよい。また、チ
ツプ２の酸化を防止するため、この加熱を水素ガ
ス、不活性ガス等の雰囲気中、または真空中で行
なう必要がある。加熱時間は30分以上とするのが
望ましい。 Next, the chip into which the lead rod 3 is inserted is subjected to heat treatment. This heat treatment is for diffusing the nickel on the surface layer of the lead rod into the inner wall of the recess 4 of the chip 2, and the heating temperature is preferably 700 to 1000°C, more preferably 750 to 800°C. Further, in order to prevent the chip 2 from being oxidized, it is necessary to perform this heating in an atmosphere of hydrogen gas, inert gas, etc., or in a vacuum. It is desirable that the heating time be 30 minutes or more.
上記加熱処理によつて、第２図に示すような半
導体用部品１が得られる。得られた半導体用部品
１は、チツプ２の凹部４内にリード棒３の先端部
がきつく嵌合し、しかもリード棒３から拡散した
ニツケルによつてチツプ２の凹部内壁部にニツケ
ル拡散層８が形成されているため、リード棒３と
チツプ２との接合強度がきわめて高いものとなつ
ている。 By the above heat treatment, a semiconductor component 1 as shown in FIG. 2 is obtained. In the obtained semiconductor component 1, the tip of the lead rod 3 is tightly fitted into the recess 4 of the chip 2, and the nickel diffused from the lead rod 3 forms a nickel diffusion layer 8 on the inner wall of the recess of the chip 2. is formed, so that the bonding strength between the lead rod 3 and the chip 2 is extremely high.
このようにして製造した１対の半導体用部品
１，１を第４図に示すようにシリコンウエハ６を
挾んで互いに突き合わせ、そのまわりにガラスモ
ールド７を設けることにより、半導体であるガラ
スモールドダイオード９が得られるのである。 As shown in FIG. 4, the pair of semiconductor components 1, 1 manufactured in this manner are butted against each other with a silicon wafer 6 between them, and a glass mold 7 is provided around them, thereby forming a glass mold diode 9, which is a semiconductor. is obtained.
実施例
平均粒度3.0ミクロンのモリブデン粉末を用い
て公知の粉末ヤ金法により第１図に示すような有
孔円柱状のチツプ２を製造した。図図において、
Ｄ＝1.5mm、ｌ＝2.0mm、d0＝0.87mm、d1＝0.76mm、
ｔ＝1.0mmであつた。これにバレル研磨を施して
凹部４の開口縁部に片側の突出量が0.05mmの突出
部５を形成した。このため、開口縁部の内径d3は
0.75mmとなつた。Example A perforated cylindrical chip 2 as shown in FIG. 1 was manufactured by a known powder iron method using molybdenum powder with an average particle size of 3.0 microns. In the diagram,
D=1.5mm, l=2.0mm, d0 =0.87mm, d1 =0.76mm,
t=1.0mm. This was subjected to barrel polishing to form a protrusion 5 on the opening edge of the recess 4 with a protrusion amount of 0.05 mm on one side. Therefore, the inner diameter d 3 of the opening edge is
It became 0.75mm.
このチツプ２に外径d2＝0.75mm、長さＬ＝30mm
のリード棒（銅棒に厚さ15ミクロンのニツケルメ
ツキを施したもの）３を据え込み、第３図のよう
な状態としたのち、加熱処理（750℃×30分、H2
中）を施して、チツプとリード棒とが接合された
半導体用部品を得た。 This chip 2 has an outer diameter d 2 = 0.75 mm and a length L = 30 mm.
A lead rod (copper rod with nickel plating of 15 microns in thickness) 3 was uprooted to the state shown in Figure 3, and then heated (750°C x 30 minutes, H 2
) to obtain a semiconductor component in which the chip and the lead rod were joined.
得られた半導体用部品の接合強度を調べるため
引張り試験を行なつた結果は、リード棒を凹部に
据え込んだだけのものが５〜６Kgで接合部が破断
（リード棒が抜き取られた）したのに対し、加熱
処理を施してニツケルを拡散させたものは、８〜
11Kgで破断した。なお、チツプに凹部を設けず、
単にリード棒を端面に突き合わせて接合しただけ
の従来製品の接合強度は２Kg以下であつた。ま
た、従来品は曲げ方向の力や衝撃力に対して弱か
つたが、本発明品はリード棒が凹部内に挿入され
ているため、曲げ方向の力や衝撃力に対してすぐ
れた抵抗力を示した。 A tensile test was conducted to examine the bonding strength of the obtained semiconductor parts, and the results showed that when the lead rod was simply placed in the recess, the joint broke at 5 to 6 kg (the lead rod was pulled out). On the other hand, those that have been heat treated to diffuse nickel have a rating of 8~
It broke at 11kg. In addition, without providing a recess in the chip,
The joint strength of conventional products, in which the lead rods were simply joined by butting against the end faces, was less than 2 kg. In addition, while conventional products were weak against bending forces and impact forces, the inventive product has excellent resistance to bending forces and impact forces because the lead rod is inserted into the recess. showed that.
以上に説明したように、本発明にかかる半導体
用部品の製造方法によれば、リード棒がチツプの
凹部へ嵌合するとともに、該嵌合部においてニツ
ケル拡散層を介してリード棒とチツプとが接合一
体化された高強度の半導体用部品を製造すること
ができる。 As explained above, according to the method for manufacturing semiconductor components according to the present invention, the lead rod fits into the recess of the chip, and the lead rod and the chip are connected to each other through the nickel diffusion layer in the fitting portion. It is possible to manufacture high-strength semiconductor parts that are integrally bonded.
第１図はチツプとリード棒の一部断面側面図、
第２図は半導体用部品の一部断面図、第３図は据
え込み状態をあらわす説明図、第４図は半導体の
側面図である。図はいずれも実施例をあらわす。
１……半導体用部品、２……チツプ、３……リ
ード棒、４……凹部、５……突出部。
Figure 1 is a partial cross-sectional side view of the tip and lead rod.
FIG. 2 is a partial sectional view of the semiconductor component, FIG. 3 is an explanatory diagram showing the upsetting state, and FIG. 4 is a side view of the semiconductor. All figures represent examples. DESCRIPTION OF SYMBOLS 1... Semiconductor parts, 2... Chip, 3... Lead rod, 4... Recessed part, 5... Protruding part.
Claims (1)
プを製造する工程と、表面にニツケル層が形成さ
れた金属リード棒を製造する工程と、該リード棒
の端部を前記チツプの凹部に嵌合する工程と、リ
ード棒を嵌合したチツプを加熱してリード棒表面
のニツケル層をチツプの凹部内面に拡散させる工
程からなり、チツプとリード棒とが一体に接合さ
れた半導体用部品を得ることを特徴とする半導体
部品の製造方法。1. A step of manufacturing a cylindrical high melting point metal chip having a recess in the core, a step of manufacturing a metal lead rod with a nickel layer formed on the surface, and a step of fitting the end of the lead rod into the recess of the chip. A semiconductor component in which the chip and the lead rod are integrally bonded is obtained by combining the chip with the lead rod and heating the chip to diffuse the nickel layer on the surface of the lead rod into the inner surface of the recess of the chip. A method for manufacturing semiconductor components, characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17266082A JPS5961952A (en) | 1982-09-30 | 1982-09-30 | Parts for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17266082A JPS5961952A (en) | 1982-09-30 | 1982-09-30 | Parts for semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5961952A JPS5961952A (en) | 1984-04-09 |
| JPS637027B2 true JPS637027B2 (en) | 1988-02-15 |
Family
ID=15946010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17266082A Granted JPS5961952A (en) | 1982-09-30 | 1982-09-30 | Parts for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5961952A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100335166B1 (en) * | 1994-11-15 | 2002-05-04 | 이고르 와이. 칸드로스 | Method of exercising semiconductor devices |
| EP0859686B1 (en) * | 1995-05-26 | 2005-08-17 | Formfactor, Inc. | Fabricating interconnects and tips using sacrificial substrates |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5420666B2 (en) * | 1973-12-28 | 1979-07-24 | ||
| JPS5550647A (en) * | 1978-10-03 | 1980-04-12 | Aaru Jii Toomasu Corp | Semiconductor member and method of assembling same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5756530Y2 (en) * | 1977-07-14 | 1982-12-04 |
-
1982
- 1982-09-30 JP JP17266082A patent/JPS5961952A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5420666B2 (en) * | 1973-12-28 | 1979-07-24 | ||
| JPS5550647A (en) * | 1978-10-03 | 1980-04-12 | Aaru Jii Toomasu Corp | Semiconductor member and method of assembling same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5961952A (en) | 1984-04-09 |
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