JPS5960904A - Semiconductive composition - Google Patents
Semiconductive compositionInfo
- Publication number
- JPS5960904A JPS5960904A JP17207582A JP17207582A JPS5960904A JP S5960904 A JPS5960904 A JP S5960904A JP 17207582 A JP17207582 A JP 17207582A JP 17207582 A JP17207582 A JP 17207582A JP S5960904 A JPS5960904 A JP S5960904A
- Authority
- JP
- Japan
- Prior art keywords
- silyl
- composition
- modified
- semiconductive composition
- cross
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims description 23
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229920000098 polyolefin Polymers 0.000 claims description 7
- -1 polypropylene Polymers 0.000 claims description 7
- 230000011514 reflex Effects 0.000 claims description 6
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 2
- 239000004743 Polypropylene Substances 0.000 claims description 2
- 238000000605 extraction Methods 0.000 claims description 2
- 229920001155 polypropylene Polymers 0.000 claims description 2
- 239000008096 xylene Substances 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims 1
- 238000004132 cross linking Methods 0.000 description 16
- 239000004698 Polyethylene Substances 0.000 description 5
- 229920000573 polyethylene Polymers 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 4
- 239000008188 pellet Substances 0.000 description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 2
- 235000017491 Bambusa tulda Nutrition 0.000 description 2
- 241001330002 Bambuseae Species 0.000 description 2
- 239000004594 Masterbatch (MB) Substances 0.000 description 2
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000011425 bamboo Substances 0.000 description 2
- 238000010382 chemical cross-linking Methods 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- HGTUJZTUQFXBIH-UHFFFAOYSA-N (2,3-dimethyl-3-phenylbutan-2-yl)benzene Chemical group C=1C=CC=CC=1C(C)(C)C(C)(C)C1=CC=CC=C1 HGTUJZTUQFXBIH-UHFFFAOYSA-N 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- 101710116850 Molybdenum cofactor sulfurase 2 Proteins 0.000 description 1
- 108010013381 Porins Proteins 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000003712 anti-aging effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 229920006244 ethylene-ethyl acrylate Polymers 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920006289 polycarbonate film Polymers 0.000 description 1
- 102000007739 porin activity proteins Human genes 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- Conductive Materials (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
Ｅ発明の技術分野］
本発明はシリル変１クボリＡレフインをベースとする半
導電性組成物に関Ｊる。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to semiconducting compositions based on silyl modified A reflex.
［発明の技術向背Ｌｌ ｃｌｊ Ｊ、び問題点］従来か
ら、ボリエヂレンやポリプロピレン等の結晶性重合体に
導電性カーホンのような導電粉末を均一に分散さけ、こ
れを照射架橋あるいは化学架橋しでなる半導電性組成物
は、熱軟化温度が高く、かつその抵抗値がある特定の領
域に達づると７５、ｉ激に止の温度係数が増大して通電
電流を制限づるようになるところから、この特性（以下
Ｐ Ｔ Ｃ特性という）を利用して温１１２シンリ、電
流限定索子としＣのサー七スタッＩ−等の感熱電流限定
素子としＣ使用されている。[Technical background of the invention and problems] Conventionally, a conductive powder such as conductive carphone is uniformly dispersed in a crystalline polymer such as polyethylene or polypropylene, and this is cross-linked by irradiation or chemically cross-linked. A semiconductive composition has a high thermal softening temperature, and when its resistance value reaches a certain range 75, the temperature coefficient of the semiconductive composition sharply increases and limits the current flowing. Utilizing this characteristic (hereinafter referred to as the PTC characteristic), C is used as a heat-sensitive current limiting element such as a heat-sensitive current limiting element such as a thermal current limiting element such as a thermal current limiting element.
しかるに、かかる従来のｒ−） ｌ” Ｃ特性を有する
架橋丁導電性組成物には次のＪ、うな欠点が存していｌ
ご 。However, such conventional crosslinked conductive compositions having r-)l"C characteristics have the following drawbacks:
Go .
りなわら照射架橋によりポリＡレフインを架橋さけた場
合に４Ｊ、照ｑ・１機の能力ににり照０・１架橋司能な
厚さ限界が決ま−）（シまい、ｉれ以上の厚さだと内部
まＣ十分に架橋することがひきなくなり、また複ｔｌｆ
な形状に成型したり肉Ｊ９＋不均一な成形品Ｃは均一（
゛、か゛つ畠い架橋度が４Ｇｆられり“、いずれの場合
も良好なｌ）Ｔ Ｃ特性を承りものが得られないという
ｆｉ１点があった。When cross-linking polyA reflex by irradiation cross-linking, the thickness limit for cross-linking of 4J and 0.1 is determined by the ability of 4J and 1 machine. The inside of the pod is no longer sufficiently cross-linked, and multiple TLF
When molded into a shape, the meat J9 + uneven molded product C is uniform (
``A degree of crosslinking of 4Gf'' was so high that, in all cases, there was a point that good TC characteristics could not be obtained.
さらに化学架橋により架橋さけたしのでは、照！Ｊ寸架
橋にＪ、るｊ、うな架橋度が不均一になるという問題は
同速されるが、高温ぐ架橋りるためポリマーの結晶化石
を１・げｌ’ Ｌ、 ！；いシ１７−プな抵抗−１芦が
１１？られす、また高温Ｃ架橋が行なわれるため複雑な
形状の場合、イーの形状を保持したまま架橋りることが
難しいという問題があった。In addition, chemical cross-linking allows for cross-linking. The problem of non-uniform cross-linking in J dimension cross-linking is solved at the same time, but since cross-linking takes place at high temperatures, the crystalline fossil of the polymer is added to the polymer at a high temperature. ;Ishi 17-P na resistance-1 Ashi is 11? In addition, since high-temperature C crosslinking is performed, there is a problem that in the case of a complex shape, it is difficult to crosslink while maintaining the E shape.
１発明の目的Ｊ
木ｙｔ明はかかる従来の欠点に対処してなされたちのＣ
゛、肉即の厚いあるいは形状や肉厚が不均一な成形品′
ｃ（Ｊ均一なｌ） ’ｌ’ Ｃ特性の得られる半導電性
組成物を提供しようとするものひある。1 Objective of the invention
゛Molded products with thick walls or uneven shapes and wall thickness'
It is an object of the present invention to provide a semiconductive composition capable of obtaining c(Juniform l)'l'C characteristics.
［発明の概要Ｉ
Ｊなわ４５木弁明の半導電１１１絹成物は、ゲル分率（
キシレン抽出１３０℃×２４時間）が６０％以」−の水
架橋されたシリル変１４ポリＡレフイン中に、１５へ一
５０ｒＴｉω％の導電性カーボンが均一に分散されＣい
ることを特徴としζいる。[Summary of the Invention I J Nawa 45 Ki Benmei's Semiconductive 111 Silk composition has a gel fraction (
It is characterized by having conductive carbon of 15 to 50 rTiω% uniformly dispersed in the water-crosslinked silyl modified 14 polyA reflex with a xylene extraction rate of 60% or more (130°C x 24 hours). .
木発明の半導電性組成物を得るには、例えばまずポリオ
レフィンに必要量の導電性カーボンを配合して半導電１
ノ１絹成物としｌＪ後、これと０．５〜１０ＰＩＩＲ（
ｌｌｌｌｉｔｌ ００１１Ｆｔｌｉ当す（７）重量部）
のビニル［・リソ１−キシシラン（Ｖ ’ｒ Ｍ ＯＳ
）のにうな１〜リアルニ」二１−ジシランと、ｏ、ｏ
ｉ〜２．０Ｐ１１［りのジクミルパーＡ ＝ｔリイド（
１つＣＰ ）のようなラジカル発生剤とを、押出機のよ
うな加熱混練機能をイＪづる賛同に供給して約２００℃
の温度Ｃ′加熱混練し４反応さけシリル変性ポリオレフ
ィン組成物を１ｑる。To obtain the semiconductive composition of Wood's invention, for example, first, a required amount of conductive carbon is blended with polyolefin to form a semiconductive composition.
After 1 J of silk composition, add 0.5 to 10 PIIR (
llllitl 0011Ftli (7) parts by weight)
Vinyl[・lyso-1-xysilane (V'r M OS
) noniuna1~rialuni''21-disilane and o,o
i~2.0P11 [Rino dicumyl par A = t lead (
A radical generator such as CP) is supplied to a heating kneading function such as an extruder at approximately 200°C.
After heating and kneading at a temperature of C', 1 q of the silyl-modified polyolefin composition was added.
次いにのシリル変性ポリＡレフイン組成物をベレッ１〜
状に成型し、常法により所定の形状に成形した後シゾチ
ル錫ジラウレ−１・（１） ［３’Ｉ’ ｌ） Ｌ ）
のようなシラノール縮合触媒の存右下に水架橋さける。Next, the silyl-modified polyA reflex composition was added to Beret 1~
After molding it into a predetermined shape by a conventional method, it is molded into a predetermined shape.
Avoid water bridges at the bottom right of the silanol condensation catalyst.
１
シラノール縮合触媒はマスターバッチの形態でシリル変
性ポリオレフィンのベレツＩ−と混合して用いてもＪ、
く、シリル変性ポリＡレノインｌｉ独（パ所定の形状に
成形した後成形品の表面に接触さＵＣ内部へ浸透させる
ようにしてもよい。成形品の架橋は通常熱水あるいは高
温水蒸気を成形品に接触ざ旺ることにＪ、り行なわれる
。1 Even if the silanol condensation catalyst is mixed with the silyl-modified polyolefin Beretsu I- in the form of a masterbatch, J,
Alternatively, silyl-modified polyA renoin (PA) may be molded into a predetermined shape and then contacted with the surface of the molded product and allowed to penetrate into the UC.For crosslinking of molded products, hot water or high-temperature steam is usually applied to the molded product. If you don't want to come into contact with it, it will be done.
また１時間はかかるが、室内に単に敢同じ（Ｊ３いただ
（］ｅも架橋は進ｉｉ？ｌる。成形品の架橋はゲル分率
（キシレン抽出１３０ ’Ｃｘ ２４１に’７間、以１
・同じ）６０％以上となるＪ、うに行なわＵ゛る。ゲル
分率が６０９６未満Ｃは１）ＩＣ特性の＾）１、シに（
１３りる珍極点を越えたところぐ抵抗の温度特性が（１
の温度時Ｉ１１．を示りＪ、うに４Ｔす、温瓜十胃によ
り電流が多く流れるようになるのＣ′好ましくない。Although it takes an hour, crosslinking is progressing just by placing it in the same room indoors.
・Same) 60% or more. C with a gel fraction of less than 6096 has 1) IC characteristics ^) 1, and (
13 The temperature characteristics of the resistance beyond the rare pole point are (1
At a temperature of I11. Indicates J, sea urchin 4T, and C', which is undesirable because more current flows through the warmed stomach.
１、記ポリオレフ７ｒンどしくは、例えばＮ Ｕ ｃ−
ε３００３（ｌｒｌ木、ｊ−ニカーネｊ商品名、メル１
へインデックス−５、密度−０，９１８） 、ＮＬＪＣ
’；８１２２（日本二１．二カー礼商品名、メルトイン
デックス−３，２、密度−０，９２／ｌ）ミラソン２１
６（三井ポリケミカル社商品名、ヌル１〜インデツクス
−３，７、密度−０，９２３）のＪ、うなポリＬヂレン
、ボリプ［’ｊピレン、ＮＵＣ−３０２５（Ｅｌ木ユニ
カー社商品名、酢酸ビニル含有量−６％、メ）Ｌｔｌ−
インデックス＝ １５） ＮＬＪＣ−３１４５、耐酸ビ
ニル含有ｍ ＝ １５％、ヌル１−インデックス−１０
）のＪ、うな土ブレンー酢酸ビニル共Ｔｐ合体、ＮｔＪ
（＞６２２０（日本ユニカー礼商品名工ヂルアクリレー
ト含有ｍ＝７％、メルトインデックス＝／Ｉ ）［）Ｐ
ＰＪ（３１６９（ロ木コニカー社商品名、十プルｊ１ク
リレート含ｔｙ ！１１＝＝−目３％、ヌル１〜インデ
ツクス−６）のＪ、うなエチレン−エチルｊツクリレー
ト共重合体が適しくいる。1. For example, N U c-
ε3003 (lrl tree, j-Nikanej product name, Mel 1
index -5, density -0,918), NLJC
'; 8122 (Japanese Ni 1. Nika Rei product name, melt index - 3.2, density - 0.92/l) Mirason 21
6 (trade name of Mitsui Polychemical Co., Ltd., null 1 to index -3,7, density -0,923) Vinyl content -6%, Me) Ltl-
Index = 15) NLJC-3145, acid resistant vinyl content m = 15%, null 1 - index - 10
) of J, Unadobrane-vinyl acetate co-Tp combination, NtJ
(>6220 (Nippon Unicar product name craftsmanship acrylate content m = 7%, melt index = /I) [)P
An ethylene-ethyl acrylate copolymer of PJ (3169 (trade name, Roki Koniker Co., Ltd., containing 11 acrylate, 11==-3%, null 1 to index -6) is suitable.
まｌＪ木発明に使用し１９る導“ｆｆ１（ｊカーボンと
しＣは、ニー１ンタクｊツクス９５）ｏピース’（ｊｌ
ｌｌンビフノカーボン拐商品名、表面１ａ ２ ／Ｉ
５ ｍ’ ／（１、吸１ｆｌｌｆｆ’＝ｌ ７５ｅｃ／
１００ｇ ） 、−Ｄｚタク−７ツクス５ｃ（ＣＯＮ
ＤＵＣ’ｌ ＥＸ）（：Ｊｒ＋シビアカーホン社商社名
品名面積２２０Ｉｎ’／す、吸油量’１ ’Ｉ ５ｃｃ
／ １ ｏｏｇ） 、 ハルカンＸｃ−７２（ｔ ｚｌ
ｃツＩ−社名品名、表面積２５う／′Ｉ ｍ２／ｇ、吸
油／ｆｌ １７８ｃｃ／１００（１）等がある。19 leads used in the invention of l J tree "ff1 (j carbon and C is knee 1 tux j tux 95) o piece' (jl
Illumbifunocarbon product name, surface 1a 2 /I
5 m' / (1, 1fllff' = l 75ec/
100g), -Dztaku-7tx5c (CON
DUC'l EX) (: Jr + Severe Carhon Company Trading Company Name Product Name Area 220 In'/su, Oil Absorption '1' I 5cc
/ 1 oog), Harkan Xc-72 (t zl
Ctsu I - company name, product name, surface area 25 u/'I m2/g, oil absorption/fl 178 cc/100 (1), etc.
なｉＪ３シリル変性変性ポリン１ノフインりる導電ｆ１
カーボンの配合量は１５〜５０中…％が好ましく、特に
、３０−３５φｍ％が適している。iJ3 silyl modified modified porin 1 nofin conductive f1
The blending amount of carbon is preferably 15 to 50%, particularly 30 to 35 φm%.
この配合量の範囲（パ木Ｗｅ明の？１′導電′性組成物
は、２０〜１５０℃の温度ｒ １０ ’・〜１０５ΩＣ
１■の体栢固イ１抵抗の範囲ｒ良好なｌ） Ｉ’ Ｃ特
性を承り。This blending amount range (Paki We Ming's ?1' electrically conductive composition has a temperature of 20 to 150°C r 10' - 105 ΩC
1. Body strength: 1. Resistance range: Good l) Accept I'C characteristics.
［発明の実施例１ 次に本発明の実施例についで説明りる。[Embodiment 1 of the invention Next, embodiments of the present invention will be explained.
実施例
ポリエチレン（Ｎ ｌ、Ｊ Ｃ−８００３＞ ７５用Ｆ
１１部と）９電１／１カーボン（」ンダクアツクス９５
０ ） ：３５）Φω部とをバンバリーミニ１−リーに
Ｊ、り混練し、次いＣ゛當法よりＬレット化しＣ導電性
カーボン含イ］のポリ土Ｊ−レン組成物を製造した。Example polyethylene (Nl, JC-8003>F for 75
11 parts) 9 electric 1/1 carbon ('' Ndakuax 95
0):35) and Φω parts were kneaded in a Banbury Mini 1-Lee, and then made into L-lets by the C method to produce a polysoil J-Ren composition containing conductive carbon.
次にこの様゛生竹カーボン含有のポリエチレン組成物に
Ｖ Ｉ ＭＯＳ ２ ＋）ＩＩＲとｌ） Ｃｌ） ０
、 ’Ｉ Ｉ） Ｉｔ Ｒとを添加しくタンブラ−中
ζ゛混合、これを押出機に供給しＵ２Ｏ５−・１Ｅ３５
℃の温度ぐで紐状に押出し、次い（゛ベレット状に成形
した。Next, V I MOS 2 +) IIR and l) Cl) 0 were added to the raw bamboo carbon-containing polyethylene composition in this way.
, 'I I) It R was added and mixed in a tumbler, and this was fed to an extruder to form U2O5-・1E35.
It was extruded into a string shape at a temperature of ℃ and then formed into a pellet shape.
これとは別に、前述したポリエチレン１．） Ｂ ｌ）
しＬ Ｉ Ｐ ｌ−Ｉ Ｒ、老化防止剤ＩＰＩ−ＩＲを
配合して常法にＪ、リシラノール綜合触媒入りマスター
バッチペレットを！ＦＪ造した。Apart from this, polyethylene 1. ) B l)
L I P l-I R, anti-aging agent IPI-IR is blended into J, masterbatch pellets containing lysilanol integrated catalyst! FJ was built.
しかる後前述したシリル変性ポリＡし゛ツインのベレッ
１〜ど触媒人りマスターバップペレッ１−とを樹脂分４
”９：１の化率（混合し常法により）ｒルム状に押出し
、水架４！ Ｌ Ｃ体栢周右抵抗の）都度変化を測定し
た。測定結果を図面に示ず。After that, the silyl-modified polyA twin pellets 1 to 1 of the catalyst masterbop pellets mentioned above were mixed with 4 resin parts.
The mixture was mixed at a ratio of 9:1 (mixed and extruded in a conventional manner) into a lume shape, and the changes in the resistance of the circumference of the LC body were measured each time.The measurement results are not shown in the drawings.
図中比較例１どしく示した−しのは実施例Ｃ製造しにノ
イルムをグル分率４０％で架橋を停市したものの体ゼロ
ー１１右抵抗の温度変化を示したちの（゛あり、比較例
２どしく示したものは実施例のシリル変１’ｌポリＡレ
フインに変え（工のペースポリマーのポリエチレンを使
用し、照Ｑ＝１架橋さけた以外は実施例と同一の半導電
１〕１ポリ土ｆレンフイルムについＣの抵抗の温度性１
（１−を示したＩりのである。In the figure, Comparative Example 1 is clearly shown - Shino shows the temperature change of the body zero 11 right resistance of the product prepared in Example C, in which the crosslinking was stopped at a glue fraction of 40%. Example 2 The silyl modified 1'l polyA reflex of the example was used for the items shown in the example (semiconductor 1 was the same as the example except that polyethylene of the polymeric paste polymer was used and cross-linking was avoided with cross-linking of Q=1). 1 Temperature characteristics of resistance of C for polycarbonate film 1
(It is I that showed 1-.
１光明の効果ｌ
以」］の実施例から６明らかなように本発明の半導電性
組成物は、高温にａ５りる負の温度係数への転換がなく
良好なＬ’ Ｔ Ｃｆｊ竹を１１ノることができる。As is clear from Example 6, the semiconducting composition of the present invention does not exhibit a negative temperature coefficient change at high temperatures and has good L' T Cfj bamboo properties. You can do it.
また化学架橋の場合のＪ、うに、結晶性を下げることが
ないのＣ′シＶ−ブなスイツブング特性を（りることが
ｒ：ε）る。In addition, in the case of chemical crosslinking, J, uni, and C' have a switching characteristic (r: ε) that does not reduce crystallinity.
さらにシリル変性ポリオレフインは内部５ｔ（゛均一に
架橋さけることが１１能であるのひ、肉厚が厚い成形品
Ｘさ）形状が複７１（な成形品の場合Ｃ−６均一４１特
性を得ることがＣ゛き、さらにシリル変性ポリオレフイ
ン（よ分子中（こ極性基を右りるのＣ１金属との接打性
が照射架橋の場合に比べ（”はるかに良好（パあり、金
属を゛１′−導電牲絹成物に接ｊ１さ１県る構造の場合
特に好適ぐある。In addition, silyl-modified polyolefin can obtain C-6 uniformity 41 characteristics in the case of a molded product with an internal 5T (11 ability to uniformly avoid crosslinking) and a molded product with a thick wall. In addition, the silyl-modified polyolefin (with a polar group in the molecule) has much better contact with the C1 metal than in the case of irradiation crosslinking. - It is particularly suitable for a structure in which the conductive silk composition is in contact with the conductive silk composition.
図面は本発明の半導電（’Ｉ組成物の特性を示Ｊグラノ
（゛ある。
代理人弁理１ 煩 １１１ 仏 ゛（ｌ、１か１
名）
１The drawings illustrate the characteristics of the semiconducting composition of the present invention.
name) 1
Claims (3)
６０％以上の水架橋されたシリル変↑（１ポリＡレフイ
ン中に、１５〜５０重量％の導電性カーボンが均一に分
散されＣいることを特徴とＪる３Ｉ′導電性組成物。(1) Water-crosslinked silyl modified ↑ with a gel fraction (xylene extraction at 130°C x 24 hours) of 60% or more (15 to 50% by weight of conductive carbon is uniformly dispersed in polyA reflex) J3I' electrically conductive composition.
％である特ｈ′［請求の範囲第１項記載の半導電性組成
物。(2) The semiconductive composition according to claim 1, wherein the conductive carbon content is 330 to 35% by weight.
ィンがポリ］ニチレン、ポリプロピレン、土ヂレンー１
チルアクリレート共！口合体Ｊ３よび」チレンー酢酸ビ
ニル共重合体から選ばれたもの（゛ある１ｓｊ Ｆ＋１
請求の範囲第１項または第２ ＪＪ’ｉ記載の半導電性
組成物。(3) The base polyolefin of silyl-modified polyolefin and f is poly]nytylene, polypropylene, and polyethylene-1
Chill acrylate too! Polymer J3 and those selected from tyrene-vinyl acetate copolymer (1sj F+1
A semiconductive composition according to claim 1 or 2 JJ'i.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17207582A JPS5960904A (en) | 1982-09-30 | 1982-09-30 | Semiconductive composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17207582A JPS5960904A (en) | 1982-09-30 | 1982-09-30 | Semiconductive composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5960904A true JPS5960904A (en) | 1984-04-07 |
Family
ID=15935072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17207582A Pending JPS5960904A (en) | 1982-09-30 | 1982-09-30 | Semiconductive composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5960904A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0235439A1 (en) * | 1985-10-12 | 1987-09-09 | Rapra Technology Limited | Electrically conductive polymers and their production |
| JPH02140902A (en) * | 1988-11-22 | 1990-05-30 | Tdk Corp | Organic positive characteristics resistor |
-
1982
- 1982-09-30 JP JP17207582A patent/JPS5960904A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0235439A1 (en) * | 1985-10-12 | 1987-09-09 | Rapra Technology Limited | Electrically conductive polymers and their production |
| JPH02140902A (en) * | 1988-11-22 | 1990-05-30 | Tdk Corp | Organic positive characteristics resistor |
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