JPS5959850A - Alloy for lead frame - Google Patents

Alloy for lead frame

Info

Publication number
JPS5959850A
JPS5959850A JP17053782A JP17053782A JPS5959850A JP S5959850 A JPS5959850 A JP S5959850A JP 17053782 A JP17053782 A JP 17053782A JP 17053782 A JP17053782 A JP 17053782A JP S5959850 A JPS5959850 A JP S5959850A
Authority
JP
Japan
Prior art keywords
alloy
lead frame
conductivity
total
good
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17053782A
Other languages
Japanese (ja)
Inventor
Daiji Sakamoto
坂本 大司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proterial Ltd
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Priority to JP17053782A priority Critical patent/JPS5959850A/en
Publication of JPS5959850A publication Critical patent/JPS5959850A/en
Pending legal-status Critical Current

Links

Landscapes

  • Conductive Materials (AREA)

Abstract

PURPOSE:To obtain a novel Cu alloy having various suitable characteristics as a material for a lead frame as well as high heat conductivity and heat resistance by adding specified percentages of Si, P, Sn and Zn to Cu. CONSTITUTION:An alloy consisting of, by weight, 0.05-0.2 Si, 0.005-0.015% P, 0.1-1% Sn, 0.05-1% Zn and the balance essentially Cu or further contg. 0.005- 0.05% in total of Mg and/or Ca and/or 0.05-0.5% in total of one or more among V, Nb and Ti is prepared. The alloy has high electric conductivity, a high softening point and favorable mechanical characteristics, and it satisfies requirements as a material for a lead frame of a semiconductor apparatus.

Description

【発明の詳細な説明】 本発明は半導体機器のリードフレーム材料に関するもの
である。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to lead frame materials for semiconductor devices.

一般に半導体を要素とする集積回路のリードフレーム材
には次のような特性か要求される。
Generally, lead frame materials for integrated circuits using semiconductors as elements are required to have the following characteristics.

(1)  熱および電気の伝導性が良いこと。(1) Good thermal and electrical conductivity.

回路部に電気信号を伝達し、また回路ff14の発熱を
すみやかに外部へ放出させるため、優れた熱伝導性と電
気伝導性が要求される。
Excellent thermal conductivity and electrical conductivity are required in order to transmit electrical signals to the circuit section and to promptly release heat generated from the circuit ff14 to the outside.

(2)  機械的強度が大きいこと 半導体機器は最終的にはそのリード先端部を各種回路基
板のソケットにさし込むかあるいはハンダイqけして使
用されるためリード自体の強度が大きいことが必要であ
り、またリード部の繰返し折曲げに対する疲労強度の強
いことが必要である。
(2) High mechanical strength Semiconductor devices are ultimately used by inserting the lead tips into the sockets of various circuit boards or by soldering them, so the leads themselves need to have high strength. In addition, the lead portion must have high fatigue strength against repeated bending.

+31  耐熱性が良いこと(軟化温度が高いこと)。+31 Good heat resistance (high softening temperature).

半導体機器の組立工程中、ダイボンディングワイヤーボ
ンディング、パッケージング等の各工程において、リー
ドフレーム材は3000〜400C程度の^−す濡にさ
らされるため、この程バLの加熱で機械的強度が劣化し
ないことが必要である。
During the assembly process of semiconductor devices, in each process such as die bonding, wire bonding, and packaging, lead frame materials are exposed to water at temperatures of about 3000 to 400 C, so the heating of the bar L has recently caused the mechanical strength to deteriorate. It is necessary not to do so.

(4)  熱膨張係数が半導体チップあるいはモールド
材に近いこと。
(4) The coefficient of thermal expansion is close to that of the semiconductor chip or mold material.

加熱を伴う組立工程中の熱膨張差に起因する半導体チッ
プの特性変動あるいはモールド材との密着性劣化を防ぐ
ため、リードフレーム材には半導体チップやモールド材
と近似したr@膨張特性が必要とされる。
In order to prevent variations in the properties of the semiconductor chip or deterioration of adhesion with the molding material due to differences in thermal expansion during the assembly process that involves heating, the lead frame material must have r@expansion characteristics similar to those of the semiconductor chip and molding material. be done.

(5) 加工性が良いこと。(5) Good workability.

iJ抜・やフォトエツチングによる成形加工や1、ある
いはリード部の曲げ加工性の良いことが必要とされる。
It is necessary to have good molding workability by iJ punching or photoetching, or to have good bending workability of the lead portion.

(6)  めっき性か良いこと。(6) Good plating properties.

リードフレームは目的に応じてその表面に金銀等のめっ
きが施されるため畜鶏↑主や耐熱性の良いめっきが容易
に得られることが望まれる。9しかしながら従来よりリ
ードフレーム材料として用いられているFe−42%N
i 、Fe −29Ni −170oなどのFe−Ni
系合金あるいは鉄人銅、リン青銅などのOu基合金はい
ずれも一長一短かあり、いずれかの必要特性を犠牲にし
て用途に応じた使い分りがなされていた。
The surface of lead frames is plated with gold, silver, etc. depending on the purpose, so it is desirable that plating with good heat resistance and heat resistance can be easily obtained. 9 However, Fe-42%N, which has been conventionally used as a lead frame material,
i, Fe-Ni such as Fe-29Ni-170o
Ou-based alloys such as Tetsujin copper and phosphor bronze all have advantages and disadvantages, and they have been used depending on the application at the expense of some of the necessary properties.

これらリードフレーム材料の中でもOu基合金は、pe
−Ni系合金にくらべて熱伝導11−1電気伝導性が極
めてずぐれ、また安価であるため近年その使用量は急激
に増加しはじめ、Ou基冶金の欠点である機械的iA度
、耐熱性あるいはめつき性などを改良した6柿の合金が
開発されてきたがいずれも熱伝導性と耐熱性さらには機
械的強度やめつき性など同時に満足するものではなかっ
た。
Among these lead frame materials, Ou-based alloys are
-Thermal conductivity 11-1 electrical conductivity is extremely superior to that of Ni-based alloys, and because it is inexpensive, its usage has begun to increase rapidly in recent years. Alternately, 6-persimmon alloys with improved plating properties have been developed, but none of them simultaneously satisfy the requirements of thermal conductivity, heat resistance, mechanical strength, and plating properties.

本発明はかかる点に鑑み既存のリードフレーム用銅合金
の欠点を改良し、良好な熱伝導11.と4熱性とを兼ね
そなえリードフレーム用利料として好適な緒特性を有す
る新規な銅合金を提供するものであり、重量%にてSi
0.05〜0.2%、Po、005〜0.015%S 
no、1〜1%、Zn0.05−1%を含み残部か実質
的にOuよりなることを特徴とする合金、さらには上記
合金番こMgおよびOB、のうちの一種または二種を合
計で0.005〜0.05%、あるいけV 、 11)
およびT1のうちの一種または二種以上を合N1で0.
05〜0.5%含有せしめたことを特徴とする合金であ
る。
In view of these points, the present invention improves the drawbacks of existing copper alloys for lead frames, and provides good heat conduction. The purpose is to provide a new copper alloy that has properties suitable for use in lead frames, having both thermal properties and 4-thermal properties.
0.05-0.2%, Po, 005-0.015%S
An alloy characterized in that it contains 1% to 1% of Zn, 0.05% to 1% of Zn, and the balance substantially consists of O, and furthermore, an alloy containing one or two of the above alloy numbers Mg and OB in total. 0.005-0.05%, Arike V, 11)
and one or more of T1 at a combined N1 of 0.
This alloy is characterized by containing 0.05 to 0.5%.

以下本発明を実施例により説明する。The present invention will be explained below with reference to Examples.

第1表に示す組成の合金を高周波溶解炉Gこて溶かし、
鋳造ののち、約800L:にて厚さ5−まで熱汗Ij田
延を行い、ついで研削により表面の酸化スケールを除去
したのち冷r#f1圧延、光輝焼鈍を繰返し厚さ0.2
5間に仕上げた。これらの試料につき導電率、軟化温度
、引張強さ、繰返し曲げ強さを測定した結果を第2表に
示す。
The alloy having the composition shown in Table 1 is melted in a high frequency melting furnace G trowel,
After casting, hot sweat IJ rolling was carried out at approximately 800L to a thickness of 5 mm, then surface oxide scale was removed by grinding, cold R#F1 rolling and bright annealing were repeated until the thickness was 0.2 mm.
Finished it in 5 minutes. The electrical conductivity, softening temperature, tensile strength, and repeated bending strength of these samples were measured and the results are shown in Table 2.

なお約返し曲げ強さは90°の片面げにおし)で曲げ戻
しの往復を1回として破断するまでの回数を測定した。
The approximate bending strength was determined by measuring the number of times until breakage occurred when one side was bent back at 90 degrees, with one round trip of bending back.

第2表の結果から明らかなように IJン青銅系(試料
%号17)は繰返し曲は強さは良好である力(導電率が
低く、また鉄人鉤系(試寥F番号1B、19)は導電率
は良好であるか絆り返し…Iす労)8力(弱し)という
欠点を有しているのに苅し本発、明合金におい1は)導
電、準約60%以上、軟化温度約400tl、:以」二
でしかもれ・返し曲げ袖さが約7同級」二というリード
フレーム材として−ねた腸性をセしていることがわかる
As is clear from the results in Table 2, the IJ bronze type (sample % No. 17) has good strength when repeatedly bent (low conductivity), and the iron hook type (sample F No. 1B, 19) Although it has the disadvantage of having good electrical conductivity or weak strength, the present invention has a good electrical conductivity, although it has the disadvantage of weak power (1) electrical conductivity, approximately 60% or more, It can be seen that the lead frame material has a softening temperature of about 400 tl, and has a sticky property as a lead frame material with a softening temperature of about 400 tl and a bending temperature of about 7.

第2表 次に本発明の成分範囲の限定理由について述べるO 8」およびZnは合金の導電率あまり害することなく機
械的強度を大きくする効果を有するがいずれも005%
未満ではその効果か少なく、またそれぞれS10.2%
、Zn1%を越えると導電率の低下が無視できなくなる
ためSlは0.05〜0.2%、znは0.05〜1%
に限定した。
Table 2 Next, the reasons for limiting the range of ingredients in the present invention are described.O8'' and Zn have the effect of increasing the mechanical strength without significantly impairing the electrical conductivity of the alloy, but both are 0.05%.
If it is less than that, the effect is small, and each S10.2%
, if Zn exceeds 1%, the decrease in conductivity cannot be ignored, so Sl is 0.05 to 0.2%, and Zn is 0.05 to 1%.
limited to.

PおよびSnはいずれも耐熱性の向」二および機械的強
度の向」二に効果があるがそれぞれPo、005%未満
、SnO,1%未満では充分なる耐熱性が摺られず、逆
にPO,O]、5%、Sn1%をそれそ1′1越えて含
有芒す−ると導電率が低下しずぎるためPおよびBnの
含有量はそれぞれ0.005〜0.015%、01〜]
、%とじた。
Both P and Sn are effective in improving heat resistance and mechanical strength, but if Po is less than 0.05% and SnO is less than 1%, sufficient heat resistance will not be achieved; , O], 5%, and Sn1% in excess of 1'1, the conductivity decreases too much. ]
, % bound.

MgおよびOaは繰返し曲げ強さを向−に8ゼる効果を
有するか、いずれか−わI+または両者分割で0.00
5%未満ではその効果が少なく、また0、05%を越え
るとその効果は飽和し、導電率の低下をまねくのでMg
およびOaについてはいずれか一種また目両者金相て0
.005〜0.05%に限定した。
Mg and Oa have the effect of increasing the cyclic bending strength by 8%, or by dividing either I+ or both by 0.00.
If it is less than 5%, the effect will be small, and if it exceeds 0.05%, the effect will be saturated, leading to a decrease in conductivity.
And for Oa, either type or both types are 0.
.. It was limited to 0.005% to 0.05%.

V 、 NbおよびTjは軟化温度および機械的強IQ
を向」―芒せる効果を有するかいずれか−41[1また
はニ種以]二合語で0.05%以下ではその効果が少な
く、逆T;☆、 に05%を越えると導入率および繰返し曲げ強さの低下
をまねくのでV 、 NbおよびT3−は−fiitま
たは二種以−り分割″′C0,05〜0.5%に限定し
た。
V, Nb and Tj are softening temperature and mechanical strength IQ
- 41 [1 or more] If the two words are less than 0.05%, the effect will be small, and if it exceeds 0.05%, the introduction rate will increase. V, Nb and T3- were limited to -fiit or split into two or more ``C0.05 to 0.5% since this would lead to a decrease in cyclic bending strength.

以上説明したように、本発明合金は高い導m率および篩
い軟化点を有するとともにきわめて良好な機械的中、j
性を示し、半導体機器のり一ドフレーノ、4(とじての
必摺・条件を兼ねそなえたものであり」、葉上顕著な効
果を有するものである。
As explained above, the alloy of the present invention has high molar conductivity and sieve softening point, as well as extremely good mechanical properties, j
It exhibits the characteristics of a semiconductor device and has the necessary printing and conditions for binding, and has a remarkable effect.

代理人  1) 中  寿  ?8    ′手続補正
書(鯖) 昭和57年1S・許願第170537  シ;=発明の
名称 、−ドア、−4合金 禎j正をする者 明細書の発明の詳細な説明の嘴。
Agent 1) Hisashi Naka? 8' Procedural Amendment (Mackerel) 1980 1S/Application No. 170537 C; = title of invention, - door, - detailed description of the invention in the specification of the person making the 4 alloy correction.

Claims (1)

【特許請求の範囲】 1、  ’ifi lij%ニテ、Sj、(1,05〜
02!%、P O,005〜0.015%、Sn0.1
〜1%、zno、o[−1%を含み残部が実質的にOu
J、りなるリードフレーム会c0 2、jiii%にてSi0.05 ヘ0.2 %、P 
0.005〜0.01.5%、5n01〜1%、Zn0
.05= 1%% N Tf1′、が実質的にOUより
なる合金に更にMgおよび08のうちの−fl(または
二種をl、i詩に合81で0.005〜0.05%含有
せしめたことを特徴とするり一ドフレーム合金。 3重職s ニてSj、0.05〜0.2%、P O,0
05〜O,O15%、SnO,コ〜1%、Zn0.05
〜1%、残部が実質的にOUよりなる合金&J史にv 
、NbJ$ J:ひ1”1のうちの一種または二棟以」
−をf3:ttて0.05〜055含冶ゼしぬたこと4
特徴とするリード部t・−ム合金。 4  M(f1%c=: −CS10.05〜0.2%
、P O,005〜O,O]、5 % 、F3nO01
〜1%、Zn0.05〜ゴ%、M6およびOaのうちの
一種または二種を同時に合計で0.005〜0.05%
、残部が実*的にOuJ:りなる合金に更にV、N)+
およびTiのうちの一種または二種以上を金相で0.0
5−0.5%含有せしめたことを特徴とするり一ドフレ
ーム合金。
[Claims] 1, 'ifi lij% nite, Sj, (1,05~
02! %, PO, 005-0.015%, Sn0.1
~1%, zno, o[-1%, and the remainder is substantially Ou
J, Rinaru lead frame meeting c0 2, jiii% Si0.05 he 0.2%, P
0.005-0.01.5%, 5n01-1%, Zn0
.. 05 = 1%% N Tf1', further contains 0.005 to 0.05% of Mg and -fl of 08 (or the two types together in 81) A bonded frame alloy characterized by the following: 3-layer Sj, 0.05-0.2%, P O, 0
05~O, O15%, SnO, Co~1%, Zn0.05
~1%, the balance being essentially OU &J history v
,NbJ$ J:hi1"One or more of 1"
- f3:tt did not contain 0.05 to 055 4
Characteristic lead part T-M alloy. 4 M (f1%c=: -CS10.05~0.2%
, PO,005~O,O], 5%, F3nO01
~1%, Zn0.05~%, one or two of M6 and Oa at the same time in total 0.005~0.05%
, the remainder is actually OuJ: further V, N) +
and one or more of Ti in a gold phase with 0.0
A glued frame alloy characterized by containing 5-0.5%.
JP17053782A 1982-09-29 1982-09-29 Alloy for lead frame Pending JPS5959850A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17053782A JPS5959850A (en) 1982-09-29 1982-09-29 Alloy for lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17053782A JPS5959850A (en) 1982-09-29 1982-09-29 Alloy for lead frame

Publications (1)

Publication Number Publication Date
JPS5959850A true JPS5959850A (en) 1984-04-05

Family

ID=15906746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17053782A Pending JPS5959850A (en) 1982-09-29 1982-09-29 Alloy for lead frame

Country Status (1)

Country Link
JP (1) JPS5959850A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60255944A (en) * 1984-05-29 1985-12-17 Furukawa Electric Co Ltd:The Copper alloy for wiring connector
US4627960A (en) * 1985-02-08 1986-12-09 Mitsubishi Denki Kabushiki Kaisha Copper-based alloy
US4666667A (en) * 1984-05-22 1987-05-19 Nippon Mining Co., Ltd. High-strength, high-conductivity copper alloy
JPS62146231A (en) * 1985-12-20 1987-06-30 Kobe Steel Ltd High conductivity copper alloy superior in migration resistance
JPS63310933A (en) * 1987-06-12 1988-12-19 Furukawa Electric Co Ltd:The Lead material for package for electronic equipment

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4666667A (en) * 1984-05-22 1987-05-19 Nippon Mining Co., Ltd. High-strength, high-conductivity copper alloy
JPS60255944A (en) * 1984-05-29 1985-12-17 Furukawa Electric Co Ltd:The Copper alloy for wiring connector
US4627960A (en) * 1985-02-08 1986-12-09 Mitsubishi Denki Kabushiki Kaisha Copper-based alloy
JPS62146231A (en) * 1985-12-20 1987-06-30 Kobe Steel Ltd High conductivity copper alloy superior in migration resistance
JPS63310933A (en) * 1987-06-12 1988-12-19 Furukawa Electric Co Ltd:The Lead material for package for electronic equipment
JPH0788550B2 (en) * 1987-06-12 1995-09-27 古河電気工業株式会社 Lead material for electronic device packages

Similar Documents

Publication Publication Date Title
JPS61183426A (en) High strength, highly conductive heat resisting copper alloy
JPS6330375B2 (en)
JPS5834537B2 (en) High-strength conductive copper alloy with good heat resistance
JPH05306421A (en) Cu alloy lead material for semiconductor device
JPS60218440A (en) Copper alloy for lead frame
JPS5959850A (en) Alloy for lead frame
JPS6158536B2 (en)
JPS5841782B2 (en) IC lead material
JPH02163331A (en) High strength and high conductivity copper alloy having excellent adhesion for oxidized film
JPS59145749A (en) Copper alloy for lead material of semiconductor apparatus
JP2797846B2 (en) Cu alloy lead frame material for resin-encapsulated semiconductor devices
JPS6335699B2 (en)
JPS59153853A (en) Matrial for lead frame
JPS61174344A (en) Copper alloy for lead frame
JPS61174345A (en) Copper alloy for lead frame
JPS6393835A (en) Copper alloy for lead material of semiconductor equipment
JPS58104148A (en) Copper alloy for lead material of semiconductor apparatus
JPS58147140A (en) Lead wire of semiconductor device
JPS6213823B2 (en)
JPS60218442A (en) Copper alloy for lead frame
JPS58123746A (en) Copper alloy for lead material of semiconductor device
JPS5853700B2 (en) Copper alloy for lead material of semiconductor equipment
JPS62130247A (en) Copper alloy for electronic appliance
JPS5920438A (en) Copper alloy for lead material of semiconductor apparatus
JPS5818981B2 (en) Copper alloy for lead material of semiconductor equipment