JPS5955027A - Connection of circuit element - Google Patents

Abstract

PURPOSE:To obtain the connecting method favorable in mass productivity, necessitating only a small adhering area by a method wherein the tip part of a metal fine wire is made to come in contact with the connecting part of a heated circuit element to be fusion welded. CONSTITUTION:The metal fine wire of a low melting point, for example the Au- Ge alloy fine wire 12 is led out from a capillary 4, and is made to descend to come in contact with the connecting part of the semiconductor element 1 heated at the melting point or more of the fine wire, the tip of the contacted metal fine wire 12 is molten to be extended a little along the adhering pattern, and is adhered to the adhering part of the element 1. Accordingly, because the metal fine wire 12 and the capillary 4 are constructed in one body, automation of mass production established for the ball bonding method can be applied. Moreover, because the adhering area is decided by the adhering pattern of the circuit element owing to fusion welding, no limitation exists in regard to the adhering pattern of the circuit element according to the connection method, the adhering area can be reduced to about the size of the metal fine wire, volume of the MOS element is reduced, and the element can be prevented from lowering of the high-frequency characteristic.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of wiring circuit elements, and more particularly to a method of wiring semiconductor circuit elements.

Generally, thin metal wires are used to make electrical connections in semiconductor devices.1. -The bonding method or the ultrasonic bonding method is often used. Also, in the thermocompression bonding method, Tsujibond can be used.

There are hole bond methods, etc., each of which has disadvantages such as O(+) and Ab.

In the case of semiconductor devices, the connection m bond is MO? 3 capacity number, the larger the bonding surface 5711 =, the larger the MO8 capacity, and in order to invite the following of - circumference V← (cutoff - wave number: '4 etc.), as a connection force for the J-continuation cord, It is desirable to have a method for connecting wires that is mass-producible and has a small surface area of 1*'.

Figure 1 (at, (bl,
aj (As shown in D, press the phylum II +! The tip of the wire 2 is pressed down and bonded.This method allows the bonding surface to be made smaller, and various metals can be selected for the connection wire, but the thin metal wire 2 and the crimping wedge 3 can be attached separately. The disadvantage is that it is difficult to automate because of its structure.

Figure 2 1a), lb) and (c) show the conventional ball bonding method. In this method, first, as shown in FIG. 2 1a), the ball-shaped part of the tip of the metal thin #2, which is drawn out from the capillary 4, is directly pressed onto the target part of the semiconductor element 1 for powder feeding, using the capillary 4. A perspective view of FIG. 2 fb),
As shown in the 1111 side view of Figure 1c), the ball portion is crushed and glued. In this method, the thin metal wire 2 and the capillary 4 are integrated, so mass production can be automated.However, since the ball is made with flame, essentially only the entire wire can be used, and furthermore, the bonded part is The disadvantage is that the area becomes large.

The present invention compensates for the shortcomings of the above conventional wiring methods, and
The purpose of this invention is to provide a wiring method that is highly productive and requires a small adhesive area.

The method of the present invention uses a thin metal wire that melts at a relatively low temperature (300 to 400°C), heats a circuit element to the melting temperature of the thin metal wire, and connects the tip of the thin metal wire to the heated circuit element. It is brought into contact with the connection part and melted and bonded.

Embodiments of the present invention will be described below with reference to the drawings.

FIGS. 3(a), 3(b), and 3(c) are diagrams for explaining a wiring method according to an embodiment of the present invention. First, as shown in FIG. 3(a), a thin metal wire with a low melting point, for example,
A thin Au-Ge alloy wire 12 is led out from the capillary 4 and brought into contact with the connecting portion of the semiconductor element 1 which is heated above the melting point of the thin wire.
As shown in the side view, the tip of the thin metal wire 12 in contact is melted and slightly expanded along the adhesive pattern, and is adhered to the adhesive portion of the element 1.

In this method, since the metal washer thin wire 12 and the capillary 4 are integrated, it is possible to automate mass production as established by the ball bond method. In addition, in the conventional crimping method, the bonding area is determined by the way the gold plated thin wire is crushed, but in this method, the bonding area is determined by the bonding pattern of the circuit element because it is molten bonding, which is different from the conventional crimping method. Similarly, there are no restrictions on the bonding pattern of circuit elements due to the wiring method, and the bonding area can be reduced to the size of a thin metal wire, resulting in a reduction in MOi9 capacity.
It is possible to prevent deterioration of high frequency characteristics.

As described above, the present invention enables a connection method that is highly mass-producible and has a small adhesive th product, which was difficult to achieve with conventional methods, resulting in a reduction in MO84J and shortening of working time.

[Brief explanation of the drawing]

Figures 1(a) and 1d are cross-sectional views showing the conventional wedge bonding method, Figures 1(b) and 1d (cl are perspective views and side views of the portion crimped by the wedge bonding method, Figure 2(a) is A sectional view showing the conventional ball bonding method, FIG. 2(bl) and FIG. A cross-sectional view showing an example of the pressure 517 in FIG. 3 fbl and FIG.
FIG. 3 is a perspective view and a side view of the portion. 1...Semiconductor element, 2.12...Metal thin wire, 3...Crimping wedge, 4...
Capillary. 5- 2nd close 3rd close

Claims (1)

[Scope of Claim] In a method for connecting circuit elements in which connection portions of circuit elements are connected using thin metal wires, the above-mentioned fast j! ＆ Adding the element 1: ”: Heat and melt-bond the thin metal wires to be connected 1 Features and method of connecting the i-path element. □