JPS5955011A - Heating equipment - Google Patents

Heating equipment

Info

Publication number
JPS5955011A
JPS5955011A JP16566882A JP16566882A JPS5955011A JP S5955011 A JPS5955011 A JP S5955011A JP 16566882 A JP16566882 A JP 16566882A JP 16566882 A JP16566882 A JP 16566882A JP S5955011 A JPS5955011 A JP S5955011A
Authority
JP
Japan
Prior art keywords
furnace
quartz tube
opened
longitudinal direction
closed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16566882A
Other languages
Japanese (ja)
Inventor
Shuichi Ohashi
修一 大橋
Takanori Hashimoto
橋本 孝徳
Soichiro Nakai
中井 宗一郎
Mamoru Maeda
守 前田
Yoshimi Shiotani
塩谷 善美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16566882A priority Critical patent/JPS5955011A/en
Publication of JPS5955011A publication Critical patent/JPS5955011A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials

Abstract

PURPOSE:To make taking in and out of a quartz tube from a furnace easy and cooling time of the furnace shorter by a method wherein a heating equipment is composed of the furnace and the quartz tube and a half portion of the furnace can be opened and closed by a hinge. CONSTITUTION:A furnace 11 is divided into two half portions 11a and 11b to longitudinal direction and, for instance, the half portion 11b can be opened and closed by a hinge 13 and a quarts tube 2 can be taken in and out not to the longitudinal direction but to the direction perpendicular to the axis of the furness.

Description

【発明の詳細な説明】 (1)、発・明の、技術分野  ・      ・、 
 。
[Detailed description of the invention] (1) Technical field of the invention
.

本発明□は加熱装置、詳しくはウェハの熱処理等に使用
する炉と石英管から成る加熱装置の炉の改良に関する。
The present invention □ relates to a heating device, and more particularly, to an improvement of a heating device furnace consisting of a furnace and a quartz tube used for heat treatment of wafers, etc.

・、、      ・      。・、、    ・・     .

(2)技術の背景    ・ 、 。(2) Technology background.

例えば:ウエハの熱処理には第1図に概略正面図で示さ
れる装置が用いられ、同図において、1は炉、2は石英
管、3は処理・室、3aは調・温機、′4はウェハ、・
5はウェハを保持す・るホルダー、・6はクリーンベン
チ、7はコイ、ル、8は排気管を示す。
For example: For heat treatment of wafers, an apparatus shown in a schematic front view in Fig. 1 is used, in which 1 is a furnace, 2 is a quartz tube, 3 is a processing chamber, 3a is a temperature controller, '4 is a wafer,・
5 is a holder for holding a wafer, 6 is a clean bench, 7 is a coil, and 8 is an exhaust pipe.

(1) ウェハ4の熱処理に際しては、クリーンベンチ6の下で
所定数のり工へ4をホルダー5の上に図示の如く立てて
配置しく図にばウェハはその二部めみを示す)1、ホル
ダー5を処理室3内に配置された炉1内め石英管2内に
搬入する。ウニ′へ4の石英管2への搬入および石英管
2がらの搬出め後に、ウェハ4はクリ−ンベンチ6から
噴出されるクリーンエア・にさらされるように構成され
、他方、処理室3に・隣接する他の室には排気管8が配
置され炉1内、の空気を排気する。□炉1の下方には処
理室3および炉11め、温度を調整する調温I8′38
′が配置されている:。・・ 炉1は第2図の横・方向断面図に示□される構成のもの
であり、、第:2図・以下において既に図示された部分
と同じ部分は同□、−符号を付して示すも・のとして、
7aはコイル7のための碍子、9ば断熱材□を示す。コ
イル7は所望の・温度分布を得るため・に、例え□ば図
示の□如く石英管を囲む如ぐに延びる配置とし、そ□れ
を′3個配設する。上記した石英管□は直径200 ”
30(l ll1lls・長さ1〜2 mのものが一般
に市(2) 版台れ使用されていや。・場合によっては、炉1の、■
 。
(1) When heat-treating the wafer 4, put a predetermined number of glues under the clean bench 6 and place the wafer 4 upright on the holder 5 as shown in the figure. The holder 5 is carried into the quartz tube 2 in the furnace 1 arranged in the processing chamber 3. After loading the wafer 4 into the quartz tube 2 and unloading the quartz tube 2, the wafer 4 is exposed to clean air blown out from the clean bench 6, and on the other hand, the wafer 4 is exposed to the clean air blown out from the clean bench 6. An exhaust pipe 8 is arranged in another adjacent chamber to exhaust the air inside the furnace 1. □ Below the furnace 1 are the processing chamber 3 and the furnace 11, and a temperature control I8'38 that adjusts the temperature.
′ is placed:. ...The furnace 1 has the configuration shown in the horizontal and directional cross-sectional view of Figure 2, and the same parts as those already shown in Figure 2 and below are designated with the same □ and - symbols. As shown,
7a indicates an insulator for the coil 7, and 9 indicates a heat insulating material □. In order to obtain a desired temperature distribution, the coils 7 are arranged so as to surround the quartz tube, for example, as shown in the figure, and three of them are arranged. The quartz tube □ mentioned above has a diameter of 200"
30 (lll1lls・1 to 2 m long is generally used as a plate stand.・In some cases, the
.

まわりを管で囲み、この管に冷却水を通して炉1をン令
去1−t14ことが1゛〒わ□れする。    ゛  
 ・:′1:・′  ”  ・。
It is surrounded by a pipe, and cooling water is passed through the pipe to turn on the furnace 1.゛
・:′1:・′” ・.

、(3)従来技車と間郷、弁、、、、、、、、、。,(3) Conventional technique car and Mago ,ben.

」1記した装置において、ウェハ4の熱処理が10〜2
0回繰り返して行われると、石英管2の内壁が汚れるの
で、石英*2を炉「め:外に取り出して清浄にしなけれ
ばならない。そのため、従来は石英、管2を!1の長平
方向にクリーンベンチ6の下あ第′1映にウェハ2.の
ホ)、Iy7−.5が不今部装置、 。
” In the apparatus described in 1, the heat treatment of the wafer 4 was performed for 10 to 2 hours.
If this process is repeated 0 times, the inner wall of the quartz tube 2 becomes dirty, so the quartz *2 must be taken out of the furnace and cleaned. At the bottom of the clean bench 6, Iy7-.5 is the wafer 2.

まで弓、1き、出し、その、隼忌、で石英管2の清浄を
行なってきた。この場合龜、石蓼管2を炉1の長手方向
に炉1の外J引入市ず1iに車間が、かかるだけでなく
、石英管2の清浄によっtクリ−ンベンチ □6′ア下
のラリー□ンなj尖部がン4 g”’A Qことになり
、もとのクリージな状態1こi−の′4ど時間がかかり
、作業性を低下させる問題があった=この間□題は、□
嵌:近の技術にお:いてはm17iQ示筆炉1が多重に
、例えば3本の炉:が」二下方向龜間隔□をおいて配置
されるようになったため、更比恕化する傾向に□ある。
Until now, I have been cleaning the quartz tube 2 using the bow, cleaning, removing, and Hayabusa. In this case, not only does it take a long time to pull the quartz tube 2 out of the furnace 1 in the longitudinal direction of the furnace 1, but also the cleaning of the quartz tube 2 requires a clean bench. The apex of the rally □ turned out to be 4 g'''A Q, and there was a problem that it took time to restore the original creasy state 1 -'4 and reduced work efficiency = During this time □ problem □
Insert: In recent technology, m17iQ writing furnaces 1 are now arranged multiple times, for example, three furnaces are arranged at a distance of two downwards distances, so there is a tendency for the writing furnaces to become more compact. There is □ in.

・1″II’ 、、 [′、、 1.  、、、:  
’ ”” ”  ””、 ’ 。
・1″II' ,, [′,, 1. ,,,:
'``''``'','.

(3) 、:′  ・(4)発明の目的 、   本発明は上記従来の問題点に鑑み、石英管と□
:□冑ノ1とh’z 4 mる加熱装置において、石英
管の出入がい、容易、になしうる炉を提供することを目
0ヤと、する。
(3) , :' ・(4) Purpose of the invention In view of the above-mentioned conventional problems, the present invention has been developed by combining a quartz tube and a □
Our goal is to provide a furnace in which a quartz tube can be easily inserted and removed in a heating device with 1 and 4 m.

レ ′(5)発明の構成 □ 、  そしてこの目的は本発明によれば1.熱処理さ□
れる物品が搬入、搬出される縦裏め石英管が炉の一内部
に配置された加熱装置において、FIIJ記炉はそ■□
、の長手方向に2分割され、2i11!□れた使手部分
は蝶番部←よ?て開閉可叩ダ■慇と、した伜とを特徴2
する加熱装置を提供す408°=J″1櫟成、・さ。
(5) Structure of the invention □ And this object according to the present invention is 1. Heat treated□
The FIIJ furnace is a heating device in which a vertically lined quartz tube through which articles are brought in and taken out is placed inside the furnace.
is divided into two in the longitudinal direction, 2i11! □The bent part is the hinge part←? It can be opened and closed with a tap. Features 2
408°=J″1, which provides a heating device for heating.

れる。It will be done.

(6)発明の実施例、。(6) Examples of the invention.

以下、本発明実施ii++を画−iこよ−て詳述す鷹゛
Embodiment ii++ of the present invention will be described in detail below with reference to the drawings.

本発”3”(7)’ ”11t htf、例÷嵐る□加
熱装置1−におい7′iよ、方向面晶晶□′1こ糸さ糺
る晶<、石□・奏−′党は′涼来浦りあもア番イφ諭す
るが、炉11をその長手方向に使手部分1111ど11
1bとに2分割し、蝶番部13によって例え赫枦半1部
:分1 t:li+が一閉可’m’□赴如□くに:構成
1シミ右英管2を′辷炉11の長手方向で置、:、、′
、、: ・ 、    ゛   1  ′・− (4) はなく図に矢印で示す如く炉11の縦軸に垂直な方向に
出入可能にする。、なお使手部分1.1bに代え使手部
分jl aを開閉可岸な構成とルでもよい。
This is ``3''(7)' ``11t htf, example ÷ storm □ heating device 1-smell 7'i, oriented crystal □' 1 thread is glued crystal<, stone □・sound-' party ``Ria Suzukiura also teaches the number φ, but the furnace 11 is moved in the longitudinal direction of the handle part 1111 and 11.
1b and 2, and use the hinge part 13 to divide it into two parts. Placed in the direction:,,′
,, : ・ , ゛ 1 ′・− (4) Instead, it is possible to enter and exit the furnace 11 in a direction perpendicular to the vertical axis as shown by the arrow in the figure. However, instead of the handle part 1.1b, the handle part jla may be configured to be able to be opened and closed.

蝶番部13は炉11の長手方向に複数個適宜間隔をおい
て設けても、・または強固な材、料で1個所に設けても
よい。・      、・ 、、、、・、・従来例にお
いて、コイル7は適正な温度分布を得る目的で3個用意
したが、本発明の実施例においては、3個のコ・イル1
7を第4・図+a+に示す如くに配置し、コイル17の
11−・は、第4図山〕に示す如くに構成する。コ・イ
ル17を、従、来例とは異なり図示の如くに配置するこ
とは、従来の技術で問題なくなし・うる、。炉11の碍
子7a、断、熱材9を用いる内部槽、成は第2図に示す
構成とほぼ同じに、・また、加熱装置全体の横、成も第
1図呻示すも・のとほぼ同、しに構成しうる。  ・ 
・ 、 ・  ・ 、、 ・・以上に説明・し、た炉に
おい□ては、石英管2が炉11の縦軸の垂直方向・に取
り:1ill′シうるので、処理室3の内部の、スペ、
−・・スを考慮し、第、3図の矢印に示す如ぐ水平線に
対し斜め方向に例えばほぼ45°の(5) 角度で出し入れできるようにしても、または、使手部分
11a 、Ilbを同時に開閉しうる構造とし、石英管
2を垂直方向に出し入れしうるようにしてもよい。いず
れの方向に出し入れするにせよ、図示の実施例において
は従来例に、比□べぎわめで容易に、かつ、短時間内に
石英管の出□し入れを・なすことが可能となる。   
             ・・また、炉11を以上に
説明した如く開閉自在・に・構成することによって、例
えば炉を冷却する必要のあるときは、単純に炉を開くだ
けで冷却に要する時間を短縮することが可能となる。こ
の場合、従来の排気管8で処理室全体め空気を、排気す
る構成とするとよい。    、′:    ・□更に
は、炉から出された石英管の清浄はクリーンベンチの配
置された室以外のところでなされるのでミクリーンベン
チのグリーンな状態を汚染することがなく、クリーンベ
ンチの使用になんら1支障を来た。すことがない・。 
         ・□ なお以上においては□、つ□
エバの熱処理を例・に□本発明にがかる装置を説明した
が、本発明の適用(6) 範囲はその場合に開穿されるものではなく、ウェハの熱
処理以外の目的に用いられる加熱装置にも及ぶものであ
る。
A plurality of hinge parts 13 may be provided at appropriate intervals in the longitudinal direction of the furnace 11, or they may be provided at one location using a strong material.・ ・ ・ ・ ・ ・ ・ In the conventional example, three coils 7 were prepared for the purpose of obtaining an appropriate temperature distribution, but in the embodiment of the present invention, three coils 1 were prepared.
7 are arranged as shown in FIG. The arrangement of the coil 17 as shown in the drawings, which is different from the conventional and conventional examples, can be done without problems using conventional techniques. The structure of the insulator 7a of the furnace 11, the insulation, and the internal tank using the heat material 9 are almost the same as those shown in FIG. The same can be configured.・
・ ・ ・ ・ ・ ・ In the furnace described above, the quartz tube 2 can be taken in a direction perpendicular to the vertical axis of the furnace 11, so that the inside of the processing chamber 3 is Supe,
- Taking into account It may be structured so that it can be opened and closed at the same time, so that the quartz tube 2 can be taken in and out in the vertical direction. Regardless of the direction in which the quartz tube is inserted or removed, in the illustrated embodiment, it is possible to insert and remove the quartz tube much more easily and in a shorter time than in the conventional example.
...Also, by configuring the furnace 11 so that it can be opened and closed as described above, for example, when the furnace needs to be cooled, it is possible to shorten the time required for cooling by simply opening the furnace. becomes. In this case, it is preferable to use a conventional exhaust pipe 8 to exhaust air from the entire processing chamber. ,': ・□Furthermore, since the quartz tube taken out from the furnace is cleaned in a room other than the room where the clean bench is located, it does not contaminate the green state of the micro-clean bench, making it easier to use the clean bench. There was no hindrance. There is nothing to do.
・□ In the above, □, tsu□
Although the apparatus according to the present invention has been explained using heat treatment of wafers as an example, the scope of application of the present invention (6) is not to open holes in such cases, but to heating apparatuses used for purposes other than heat treatment of wafers. It also extends to

(7)発明の効果 以上、詳細に説明した如く、本発明の装置においては、
加熱用の炉において、炉の内部に配置される石英管等の
出し入れが容易になされ、炉の冷却時間が短縮され、ク
リーンベンチに対する汚染が回避されうるので、半導体
の製造歩留りの向上に効果大であり、炉が生産性向上の
ため多重に配置されるようになると、かかるす1果はよ
り大になる。
(7) Effects of the invention As explained in detail above, in the apparatus of the present invention,
In a heating furnace, quartz tubes placed inside the furnace can be easily taken in and out, the cooling time of the furnace is shortened, and contamination of the clean bench can be avoided, which is highly effective in improving semiconductor manufacturing yields. However, as furnaces are arranged in multiple locations to improve productivity, this effect becomes even greater.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の加熱装置の配置を示す当該装置の正面図
、第2図は第1図の炉の横方向断面図、第3図は本発明
にかかる炉の横方向断面図、第4図+a)ば第3図の炉
の正面図、第4図fb)は第4図fa)の炉の一部の斜
視図である。 1.11−・炉、2−・−石英管、3−処理室、3a−
調温機、4−ウェハ、5−・ホルダー、(7) 6・−クリーンベンチ、7.17− コイル、8−・−
排気管、lla、 Llb−使手部分、13−蝶番部 (8) 第1図 第2図 第3図 第4図 717
FIG. 1 is a front view of a conventional heating device showing the arrangement thereof, FIG. 2 is a cross-sectional view of the furnace shown in FIG. 1, FIG. 3 is a cross-sectional view of the furnace according to the present invention, and FIG. Figure +a) is a front view of the furnace of Figure 3, and Figure 4fb) is a perspective view of a part of the furnace of Figure 4fa). 1.11-・furnace, 2-・-quartz tube, 3-processing chamber, 3a-
Temperature controller, 4-Wafer, 5-Holder, (7) 6-Clean bench, 7.17- Coil, 8--
Exhaust pipe, lla, Llb-handle part, 13-hinge part (8) Fig. 1 Fig. 2 Fig. 3 Fig. 4 717

Claims (1)

【特許請求の範囲】[Claims] 、熱処理される物品が搬入・1.搬出される縦長の石英
管が炉の内部に配置された加熱装・置1.において、前
記炉はその長手方向に2分割され、2分割された炉半部
分は蝶・番部によ、、って開□閉可能・な構成としたこ
とを特徴とする加熱装置。     ・  、・
, goods to be heat treated are brought in.1. 1. A heating device/equipment in which the vertically long quartz tube to be carried out is placed inside the furnace. A heating device characterized in that the furnace is divided into two parts in the longitudinal direction, and the two halves of the furnace can be opened and closed by hinges.・ 、・
JP16566882A 1982-09-22 1982-09-22 Heating equipment Pending JPS5955011A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16566882A JPS5955011A (en) 1982-09-22 1982-09-22 Heating equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16566882A JPS5955011A (en) 1982-09-22 1982-09-22 Heating equipment

Publications (1)

Publication Number Publication Date
JPS5955011A true JPS5955011A (en) 1984-03-29

Family

ID=15816746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16566882A Pending JPS5955011A (en) 1982-09-22 1982-09-22 Heating equipment

Country Status (1)

Country Link
JP (1) JPS5955011A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62144333A (en) * 1985-12-18 1987-06-27 Teru Saamuko Kk Heater

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5721744A (en) * 1980-07-15 1982-02-04 Fuji Electric Co Ltd Apparatus for heat treatment at high temperature

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5721744A (en) * 1980-07-15 1982-02-04 Fuji Electric Co Ltd Apparatus for heat treatment at high temperature

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62144333A (en) * 1985-12-18 1987-06-27 Teru Saamuko Kk Heater
JPH03771B2 (en) * 1985-12-18 1991-01-08 Tokyo Erekutoron Sagami Kk

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