JPS5952833A - プラズマ気相反応装置 - Google Patents

プラズマ気相反応装置

Info

Publication number
JPS5952833A
JPS5952833A JP57163728A JP16372882A JPS5952833A JP S5952833 A JPS5952833 A JP S5952833A JP 57163728 A JP57163728 A JP 57163728A JP 16372882 A JP16372882 A JP 16372882A JP S5952833 A JPS5952833 A JP S5952833A
Authority
JP
Japan
Prior art keywords
reaction
reactive gas
substrate
semiconductor layer
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57163728A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0458173B2 (member.php
Inventor
Shunpei Yamazaki
山崎　「しゆん」平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP57163728A priority Critical patent/JPS5952833A/ja
Priority to US06/533,941 priority patent/US4582720A/en
Publication of JPS5952833A publication Critical patent/JPS5952833A/ja
Priority to US06/828,908 priority patent/US4642243A/en
Priority to US06/828,790 priority patent/US4640845A/en
Priority to US07/127,602 priority patent/US4832981A/en
Publication of JPH0458173B2 publication Critical patent/JPH0458173B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3411—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H01J37/185—Means for transferring objects between different enclosures of different pressure or atmosphere
    • H10P14/24—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP57163728A 1982-09-20 1982-09-20 プラズマ気相反応装置 Granted JPS5952833A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP57163728A JPS5952833A (ja) 1982-09-20 1982-09-20 プラズマ気相反応装置
US06/533,941 US4582720A (en) 1982-09-20 1983-09-20 Method and apparatus for forming non-single-crystal layer
US06/828,908 US4642243A (en) 1982-09-20 1986-02-13 Method and apparatus for forming non-single-crystal layer
US06/828,790 US4640845A (en) 1982-09-20 1986-02-13 Method and apparatus for forming non-single-crystal layer
US07/127,602 US4832981A (en) 1982-09-20 1987-11-30 Method and apparatus for forming non-single crystal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57163728A JPS5952833A (ja) 1982-09-20 1982-09-20 プラズマ気相反応装置

Publications (2)

Publication Number Publication Date
JPS5952833A true JPS5952833A (ja) 1984-03-27
JPH0458173B2 JPH0458173B2 (member.php) 1992-09-16

Family

ID=15779529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57163728A Granted JPS5952833A (ja) 1982-09-20 1982-09-20 プラズマ気相反応装置

Country Status (1)

Country Link
JP (1) JPS5952833A (member.php)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60224215A (ja) * 1984-04-20 1985-11-08 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPS60224216A (ja) * 1984-04-20 1985-11-08 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPS62157136U (member.php) * 1986-03-26 1987-10-06
US5512102A (en) * 1985-10-14 1996-04-30 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
EP1155599A4 (en) * 1999-02-01 2007-03-28 Sigma Technologies Internation ATMOSPHERIC STATIONARY GLIMMENT CHARGE PLASMA

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60224215A (ja) * 1984-04-20 1985-11-08 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPS60224216A (ja) * 1984-04-20 1985-11-08 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
US5512102A (en) * 1985-10-14 1996-04-30 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
JPS62157136U (member.php) * 1986-03-26 1987-10-06
EP1155599A4 (en) * 1999-02-01 2007-03-28 Sigma Technologies Internation ATMOSPHERIC STATIONARY GLIMMENT CHARGE PLASMA

Also Published As

Publication number Publication date
JPH0458173B2 (member.php) 1992-09-16

Similar Documents

Publication Publication Date Title
US4654226A (en) Apparatus and method for photochemical vapor deposition
US20130012030A1 (en) Method and apparatus for remote plasma source assisted silicon-containing film deposition
JPS5892217A (ja) 半導体装置作製方法
TW200915393A (en) Compound thin film and method of forming the same, and electronic device using the thin film
KR20080033955A (ko) 반도체 구조물, 광기전력 디바이스 및 제조 방법과 솔러모듈
KR20090031492A (ko) 광전 소자용 미정질 실리콘 막을 증착하기 위한 방법 및장치
EP1365042A1 (en) Method for passivating a semiconductor substrate
JPS59100516A (ja) 光電池素子の製造装置及びアセンブリ
JPS5892218A (ja) 半導体装置作製方法
JPS6043819A (ja) 気相反応方法
US9905723B2 (en) Methods for plasma activation of evaporated precursors in a process chamber
JPS5952833A (ja) プラズマ気相反応装置
JPS5825226A (ja) プラズマ気相反応装置
CN86106620A (zh) 利用磁场的微波增强型化学气相淀积系统和方法
TW200824140A (en) Methods and systems for manufacturing polycrystalline silicon and silicon-germanium solar cells
JPS5952834A (ja) プラズマ気相反応装置
JPH01157520A (ja) プラズマ気相反応方法
JP3255903B2 (ja) 堆積膜形成方法および堆積膜形成装置
JPH02119126A (ja) 半導体装置作製方法
JPH0436449B2 (member.php)
JPS6062113A (ja) プラズマｃｖｄ装置
JPS5916329A (ja) プラズマ気相反応装置
JP2805611B2 (ja) 被膜作製方法
JPH0244141B2 (member.php)
JPH07183550A (ja) 非晶質光電変換素子