JPS5951560A - 半導体メモリ装置 - Google Patents

半導体メモリ装置

Info

Publication number
JPS5951560A
JPS5951560A JP57161863A JP16186382A JPS5951560A JP S5951560 A JPS5951560 A JP S5951560A JP 57161863 A JP57161863 A JP 57161863A JP 16186382 A JP16186382 A JP 16186382A JP S5951560 A JPS5951560 A JP S5951560A
Authority
JP
Japan
Prior art keywords
node
circuit
programmable element
semiconductor memory
spare circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57161863A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0243344B2 (en:Method
Inventor
Yasaburo Inagaki
稲垣　▲や▼三郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57161863A priority Critical patent/JPS5951560A/ja
Publication of JPS5951560A publication Critical patent/JPS5951560A/ja
Publication of JPH0243344B2 publication Critical patent/JPH0243344B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
JP57161863A 1982-09-17 1982-09-17 半導体メモリ装置 Granted JPS5951560A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57161863A JPS5951560A (ja) 1982-09-17 1982-09-17 半導体メモリ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57161863A JPS5951560A (ja) 1982-09-17 1982-09-17 半導体メモリ装置

Publications (2)

Publication Number Publication Date
JPS5951560A true JPS5951560A (ja) 1984-03-26
JPH0243344B2 JPH0243344B2 (en:Method) 1990-09-28

Family

ID=15743388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57161863A Granted JPS5951560A (ja) 1982-09-17 1982-09-17 半導体メモリ装置

Country Status (1)

Country Link
JP (1) JPS5951560A (en:Method)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5816544A (ja) * 1981-07-22 1983-01-31 Toshiba Corp プログラム可能回路
JPS58170034A (ja) * 1982-03-19 1983-10-06 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン 修復した集積回路の識別

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5816544A (ja) * 1981-07-22 1983-01-31 Toshiba Corp プログラム可能回路
JPS58170034A (ja) * 1982-03-19 1983-10-06 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン 修復した集積回路の識別

Also Published As

Publication number Publication date
JPH0243344B2 (en:Method) 1990-09-28

Similar Documents

Publication Publication Date Title
CN100390995C (zh) 半导体器件
TWI451426B (zh) 電熔絲巨集
US20090001994A1 (en) Semiconductor device including fuse and method for testing the same capable of suppressing erroneous determination
CN100463174C (zh) 半导体集成电路装置
US9275915B2 (en) Circuit device having a semiconductor component
US20080192390A1 (en) Semiconductor device including protection circuit and switch circuit and its testing method
US6255893B1 (en) Method and apparatus for detection of electrical overstress
US5381105A (en) Method of testing a semiconductor device having a first circuit electrically isolated from a second circuit
US5804859A (en) Power semiconductor device having over-current protection
JP2858390B2 (ja) 縦型半導体装置の特性測定方法
US7263759B2 (en) Methods of manufacturing and testing bonding wires
TW200301904A (en) Evaluation circuit for an anti-fuse
JPH03290900A (ja) 半導体メモリ装置
JPS5951560A (ja) 半導体メモリ装置
JP2925287B2 (ja) 半導体装置
JP2003017569A (ja) 半導体集積回路
JPS6350800B2 (en:Method)
CN105448756B (zh) 用于并行测试系统的栅氧化层完整性的测试结构
US10859616B2 (en) Semiconductor integrated circuit
JP3644168B2 (ja) 半導体集積回路
TWI387767B (zh) 具有一功率構件的單晶積體半導體裝置及製造單晶積體半導體裝飾的方法
JPH0584062B2 (en:Method)
JP3534815B2 (ja) 半導体集積回路装置
JP3945641B2 (ja) 半導体装置
JPH0241117B2 (en:Method)