JPS5950213B2 - N-type gallium arsenide ohmic electrode and its formation method - Google Patents
N-type gallium arsenide ohmic electrode and its formation methodInfo
- Publication number
- JPS5950213B2 JPS5950213B2 JP54053906A JP5390679A JPS5950213B2 JP S5950213 B2 JPS5950213 B2 JP S5950213B2 JP 54053906 A JP54053906 A JP 54053906A JP 5390679 A JP5390679 A JP 5390679A JP S5950213 B2 JPS5950213 B2 JP S5950213B2
- Authority
- JP
- Japan
- Prior art keywords
- ohmic electrode
- layer
- gallium arsenide
- type
- type gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims description 27
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 10
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000007738 vacuum evaporation Methods 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 8
- 229910052759 nickel Inorganic materials 0.000 claims 4
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 238000001704 evaporation Methods 0.000 claims 1
- 150000002290 germanium Chemical class 0.000 claims 1
- 239000010931 gold Substances 0.000 description 21
- 239000000956 alloy Substances 0.000 description 6
- 229910001020 Au alloy Inorganic materials 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 229910000711 U alloy Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Description
【発明の詳細な説明】
この発明はＮ形砒化ガリウム（ＧａＡｓ）のオーム性電
極およびその形成方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an N-type gallium arsenide (GaAs) ohmic electrode and a method for forming the same.
従来、Ｎ形ＧａＡｓのオーム性電極としては、金（Ａｕ
）−ゲルマニウム（Ｇｅ）合金、金（Ａｕ）−錫（Ｓｎ
）合金などのＡｕ系電極材料が用いられている。Conventionally, gold (Au) has been used as an ohmic electrode for N-type GaAs.
)-germanium (Ge) alloy, gold (Au)-tin (Sn
) Au-based electrode materials such as alloys are used.
このようなＡｕ合金の電極材料はその材料費自体が高価
であるばかりでなく、Ａｕ線などのワイヤボンディング
作業を行なう際にボンディングされにくいという問題点
があつた。通常、このようなワイヤボンディングは熱圧
着法により行なわれている。Such Au alloy electrode materials are not only expensive in material cost, but also have the problem of being difficult to bond with wires such as Au wires. Usually, such wire bonding is performed by thermocompression bonding.
純粋なＡｕとＡｕを用いて熱圧着すると非常に強固な接
合が得られるが、純粋なＡｕはＮ形ＧａＡｓに対しては
オーム性電極材料とならない。このため、前記のような
Ａｕ合金が使用されているわけであるが、Ａｕは合金の
形になると硬度が増し熱圧着されにくくなるという性質
がある。また、前記Ａｕ合金は単にＮ形ＧａＡｓに接触
させただけではオーム性電極にはならず、これを熱処理
する必要があるが、この熱処理によりＡｕ合金とＮ形Ｇ
ａＡｓとの間に反応が生じて複雑な合金の電極となつて
しまい、これもボンディングされにくい原因となつてい
た。このようなＡｕ合金に熱圧着法によりＡｕ線のワイ
ヤボンディングを行ない、テンションメータを用いてこ
のボンディング強度を測定したところ、２ｇ以下の弱い
ものが多数発生した。また、ボンディング当初は強度が
あつても、温度サイクルなどの熱ストレスフを加えるこ
とによりＡｕ線がＡｕ合金からはがれることもある。こ
のように、従来のＮ形ＧａＡｓのオーム性電極としてＡ
ｕ合金材料を用いたものは、Ａｕ線のワイヤボンディン
グがされにく＜、製造歩留りが悪く５なるとともに信頼
性も低下するという欠点があつた。Although a very strong bond can be obtained by thermocompression bonding using pure Au and Au, pure Au is not an ohmic electrode material for N-type GaAs. For this reason, the above-mentioned Au alloy is used, but Au has the property that when it is in the form of an alloy, its hardness increases and it becomes difficult to be bonded by thermocompression. In addition, the Au alloy does not become an ohmic electrode simply by contacting it with N-type GaAs, and it must be heat-treated.
A reaction occurs with aAs, resulting in a complex alloy electrode, which also makes it difficult to bond. When Au wire was wire bonded to such an Au alloy by a thermocompression bonding method and the bonding strength was measured using a tension meter, many weak wires of 2 g or less were found. Further, even if the Au wire is strong at the beginning of bonding, it may peel off from the Au alloy by applying thermal stress such as temperature cycling. In this way, as a conventional N-type GaAs ohmic electrode, A
Those using U-alloy materials had drawbacks such as difficulty in wire bonding of Au wires, poor manufacturing yields, and reduced reliability.
この発明はこのような従来の欠点を解消するためになさ
れたもので゛、その目白勺とするところ（まワイヤボン
デイングが容易にかつ強固に行なえて歩留りおよび信頼
性が向上し、しかもコストも安くなるようなＮ形ＧａＡ
ｓのオーム性電極およびその形成方法を提供することに
ある。This invention was made to eliminate these conventional drawbacks, and its main points are that wire bonding can be easily and firmly performed, yields and reliability are improved, and the cost is low. N-type GaA
An object of the present invention is to provide an ohmic electrode and a method for forming the same.
以下、この発明を実施例により詳細に説明する。Hereinafter, this invention will be explained in detail with reference to Examples.
第］図は、この発明に係るオーム性電極をシリコンドー
プ砒化ガリウム（ＧａＡｓ：Ｓｉ）を用いたＮ面発光形
の赤外線発光ダイオードに適した実施例のウエハの断面
図である。FIG. 1 is a cross-sectional view of a wafer of an embodiment suitable for an N-face emission type infrared light emitting diode using silicon-doped gallium arsenide (GaAs:Si) as an ohmic electrode according to the present invention.
図において、通常ブリツジマン法によつて得られる不純
物としてＳｉが添加されたＮ形ＧａＡｓ基板１の主面（
図では下面）には、液相エピタキシヤル成長によりＮ形
ＧａＡｓ層２およびその上にＰ形ＧａＡｓ層３が形成さ
れている。この場合、液相エピタキシヤル成長において
、不純物としてのＳｉが両性に作用し、成長過程でＮ形
ＧａＡｓ層２が形成された後反転してＰ形ＧａＡｓ層３
が形成される。そして、Ｎ形ＧａＡｓ層２とＰ形ＧａＡ
ｓ層３の境界にはＰ−Ｎ接合４が形成される。このよう
に形成されたウエハは、所定の厚みになるようにＮ形Ｇ
ａＡｓ基板１の主面（図で上面）を研磨されるとともに
その表面が鏡面に仕上げられる。In the figure, the main surface (
On the lower surface (in the figure), an N-type GaAs layer 2 and a P-type GaAs layer 3 are formed thereon by liquid phase epitaxial growth. In this case, in the liquid phase epitaxial growth, Si as an impurity acts amphotericly, and after the N-type GaAs layer 2 is formed during the growth process, it is reversed and the P-type GaAs layer 3 is formed.
is formed. Then, the N-type GaAs layer 2 and the P-type GaA
A PN junction 4 is formed at the boundary of the s-layer 3. The wafer formed in this way is made into N-type G to have a predetermined thickness.
The main surface (upper surface in the figure) of the aAs substrate 1 is polished, and the surface is finished to a mirror surface.
次に、この表面には、チツプ単位に配分されるように、
適当なマスクを用いて所定個所に選択的にオーム性電極
５が形成される。次にこの発明を特徴づけるところのオ
ーム性電極５の形成工程を説明する。Next, on this surface, so that it is distributed in chip units,
Ohmic electrodes 5 are selectively formed at predetermined locations using a suitable mask. Next, the process of forming the ohmic electrode 5, which characterizes the present invention, will be explained.
先づ、前記ウエハを真空蒸着装置内に装填した後、十分
に排気してか．らウエハを１００℃〜４５０℃の温度に
加熱する。次に、加熱されたウエハのＮ形ＧａＡｓ基板
１の表面上にマスク（図示せず）を通してＧｅを真空蒸
着してＧｅ層を形成させる。次に、このＧｅ層上に同じ
くＮｉを真空蒸着してＮｉ層を形成させ、さらにｊこの
Ｎｉ層の上に今度はＡｌを真空蒸着してＡ１層を形成さ
せる。なお、前記加熱温度は１００℃〜４５０℃の範囲
にしたが、これは、１００℃以下であると蒸着されたＧ
ｅ．Ｎｉ．Ａｌからなる層がはがれることがあり、また
４５０℃以内の温度で十分な強度の９Ｇｅ．Ｎｉ．Ａ１
からなる層が得られるため、それ以上加熱するのは電力
の損失であり、さらに後述の工程で４５０℃以上の温度
で熱処理されるので蒸着時に４５０℃以上に加熱する必
要はないからである。このように、Ｎ形ＧａＡｓ基板１
の表面上にＧｅ．Ｎｉ．Ａｌからなる層が形成されたウ
エハを、冷却後真空蒸着装置からとり出し、しかる後、
電極の酸化を防止するために、不活性もしくは還元性雰
囲気中、または真空中で４５０℃〜５５０℃の温度で熱
処理する。このようにして、ウエハのＮ形ＧａＡｓ基板
１の表面上には選択的に多数のＧｅ、Ｎｉ．Ａｌからな
るオーム性電極５が形成される。なお、オーム性電極５
はＮ形ＧａＡｓ基板１の表面上に全面的にＧｅ．Ｎｉ．
Ａｌからそれぞれなる蒸着層を形成した後、周知の写真
蝕刻技術を用いて形成することもできる。次に、ウエハ
のＰ形ＧａＡｓ層３の表面には全面的に適当な材料を用
いてオーム性電極６が形成される。First, after loading the wafer into the vacuum evaporation equipment, make sure to thoroughly evacuate the vacuum. The wafer is then heated to a temperature of 100°C to 450°C. Next, Ge is vacuum evaporated onto the surface of the heated N-type GaAs substrate 1 of the wafer through a mask (not shown) to form a Ge layer. Next, Ni is similarly vacuum-deposited on this Ge layer to form a Ni layer, and then Al is vacuum-deposited on this Ni layer to form an A1 layer. Note that the heating temperature was set in the range of 100°C to 450°C, but this does not mean that the deposited G
e. Ni. The Al layer may peel off, and the 9Ge. Ni. A1
Since a layer consisting of is obtained, further heating is a loss of power, and furthermore, since heat treatment is performed at a temperature of 450° C. or higher in the process described later, there is no need to heat the layer to a temperature of 450° C. or higher during vapor deposition. In this way, the N-type GaAs substrate 1
Ge. Ni. After cooling, the wafer on which a layer of Al has been formed is taken out from the vacuum evaporation apparatus, and then,
To prevent oxidation of the electrode, heat treatment is performed at a temperature of 450°C to 550°C in an inert or reducing atmosphere or in vacuum. In this way, a large number of Ge, Ni, etc. are selectively formed on the surface of the N-type GaAs substrate 1 of the wafer. An ohmic electrode 5 made of Al is formed. In addition, the ohmic electrode 5
is a Ge. Ni.
After forming each vapor deposited layer of Al, it can also be formed using a well-known photolithographic technique. Next, an ohmic electrode 6 is formed entirely on the surface of the P-type GaAs layer 3 of the wafer using a suitable material.
そして、このようなＮ形オーム性電極５とＰ形オーム性
電極６が形成されたウエハは４００μｍ×４００μｍ角
に分離されて、第２図に示すような赤外線発光ダイオー
ドのペレツト１０が得られる。このペレツト１０は適当
な金属ヘツダなどにＰ形オーム性電極６が接触するよう
にマウントし、しかる後にＮ形オーム性電極５には熱圧
着法によりＡｕ線のワイヤボンデイングがなされる。こ
のようにして製造した赤外線発光ダイオードの順方向電
流５０ｍＡにおける順方向電圧を測定したところ１．２
５Ｖの値が得られた。これは、従来のＡｕ−Ｇｅ合金（
Ｇｅｌ２Ｗｔ％）のオーム性電極を用いた発光ダイオー
ドと同じ特性であり、この発明によるＧｅ．Ｎｉ．Ａｌ
からなる層のオーム性電極が十分に低い接触抵抗を有す
ることが確認された。また、このオーム性電極に対して
Ａｕ線のワイヤボンデイングをなす際に、通常の半導体
素子のＳｉ上のＡｌ電極に対するＡｕ線のワイヤボンデ
イングと同様に、非常に容易にボンデイングができた。
さらに、１００個の試料に対してテンシヨンメータを用
いてボンデイング強度を測定したところ、いずれも５ｇ
以上の強度を有し、しかもテンシヨンメータでＡｕ線を
強く引つ張つたとき、いずれもＡｕ線が途中から切断さ
れオーム性電極とＡｕ線の接合部がはずれるということ
は全くなかつた。また、製造した赤外線発光ダイオード
を次に示すような各試験項目に対してそれぞれ４０個ず
つ信頼性試験を行なつた。（１）温度サイクル試験：一
５０℃〜１００℃５０サイクル。Then, the wafer on which the N-type ohmic electrode 5 and the P-type ohmic electrode 6 are formed is separated into 400 .mu.m.times.400 .mu.m squares to obtain infrared light emitting diode pellets 10 as shown in FIG. This pellet 10 is mounted on a suitable metal header or the like so that the P-type ohmic electrode 6 is in contact with it, and then an Au wire is wire-bonded to the N-type ohmic electrode 5 by thermocompression bonding. The forward voltage of the infrared light emitting diode thus manufactured at a forward current of 50 mA was measured to be 1.2.
A value of 5V was obtained. This is similar to the conventional Au-Ge alloy (
The characteristics are the same as those of a light emitting diode using an ohmic electrode of Ge. Ni. Al
It was confirmed that the ohmic electrode of the layer consisting of the above had a sufficiently low contact resistance. Further, when wire-bonding an Au wire to this ohmic electrode, bonding could be performed very easily in the same way as wire-bonding an Au wire to an Al electrode on Si of a normal semiconductor device.
Furthermore, when we measured the bonding strength of 100 samples using a tension meter, all of them were 5g.
With this strength, when the Au wire was strongly pulled with a tension meter, the Au wire was never cut midway and the joint between the ohmic electrode and the Au wire never came off. In addition, reliability tests were conducted on the manufactured infrared light emitting diodes for 40 pieces each for each of the following test items. (1) Temperature cycle test: -50°C to 100°C 50 cycles.
（２）熱シヨツク試験：０℃（氷水）峠１００℃（沸と
う水）、５サイクル。(2) Heat shock test: 0°C (ice water) to 100°C (boiling water), 5 cycles.
（３）連続通電試験：１００ｍＡ、１０００時間。(3) Continuous current test: 100mA, 1000 hours.
（４）断続通電試験：接合温度４０℃〜１００℃２５０
００サイクル。（５）耐湿試験：６０℃、９５％、１０
００時間。(4) Intermittent current test: Junction temperature 40°C to 100°C 250°C
00 cycles. (5) Humidity test: 60℃, 95%, 10
00 hours.
（６）落下試験：７５ｃｍの高さから木板上に３回落下
。このような試験に対して不良品は１個も発生せず、非
常に高い信頼性が得られた。(6) Drop test: Dropped three times onto a wooden board from a height of 75 cm. In this test, there were no defective products, and very high reliability was obtained.
以上の実施例では、Ｓｉを添加した液相エピタキシヤル
ＧａＡｓを用いる赤外線発光ダイオードの例について説
明したが、他の不純物を添加したＮ形ＧａＡｓ結晶に対
して適用でき、また赤外線発光ダイオード以外の各種装
置に応用できる。In the above embodiment, an example of an infrared light emitting diode using liquid phase epitaxial GaAs doped with Si was explained, but it can also be applied to N-type GaAs crystal doped with other impurities, and various types other than infrared light emitting diodes can be used. Can be applied to equipment.
このようにこの発明に係るＮ形ＧａＡｓのオーム性電極
およびその形成方法によると、Ａｕ線などのワイヤボン
デイングを容易に行なうことができるとともに、そのボ
ンデイング強度を強くでき、製造歩留りおよび信頼性が
著しく向上する。As described above, according to the N-type GaAs ohmic electrode and the method for forming the same according to the present invention, wire bonding of Au wire or the like can be easily performed, and the bonding strength can be increased, and the manufacturing yield and reliability can be significantly improved. improves.
また、オーム性電極材料としてＡｕを使用しないので材
料費的にも廉価になり、製造コストを低減できるなど数
多くの優れた効果を奏する。Furthermore, since Au is not used as the ohmic electrode material, the material cost is low, and manufacturing costs can be reduced, among other excellent effects.
第１図はこの発明に係るオーム性電極を用いた一実施例
の赤外線発光ダイオードのウエハの断面図、第２図はそ
のペレツトの断面図である。
１ ・・・ ・・・ Ｎ形ＧａＡｓ基板、２ ・・・・
・・ Ｎ形ＧａＡｓ層、３ ・・・・・・Ｐ形ＧａＡｓ
層、４・・・・・・Ｐ−Ｎ接合、５ ・・・・・・Ｎ形
オーム性電極、６・・・・・・Ｐ形オーム性電極。FIG. 1 is a sectional view of a wafer of an infrared light emitting diode according to an embodiment of the invention using an ohmic electrode, and FIG. 2 is a sectional view of a pellet thereof. 1... N-type GaAs substrate, 2...
...N-type GaAs layer, 3...P-type GaAs
Layer, 4...P-N junction, 5...N type ohmic electrode, 6...P type ohmic electrode.
Claims (1)
らなることを特徴とするＮ形砒化ガリウムのオーム性電
極。 ２ Ｎ形砒化ガリウムを真空中で１００℃〜４５０℃に
加熱する工程と、加熱された前記砒化ガリウムのＮ形層
表面に真空蒸着によりゲルマニウム層を形成する工程と
、このゲルマニウム層上に真空蒸着によりニッケル層を
形成する工程と、このニッケル層上に真空蒸着によりア
ルミニウム層を形成する工程と、ゲルマニウム、ニッケ
ルおよびアルミニウム層が形成された前記砒化ガリウム
を不活性ないし還元性雰囲気中、または真空中で４５０
℃〜５５０℃にて熱処理する工程とからなることを特徴
とするＮ形砒化ガリウムのオーム性電極形成方法。[Claims] 1. An N-type gallium arsenide ohmic electrode, characterized in that it consists of layers of germanium, nickel, and aluminum. 2. A step of heating N-type gallium arsenide to 100° C. to 450° C. in vacuum, a step of forming a germanium layer on the surface of the heated N-type layer of gallium arsenide by vacuum evaporation, and a step of vacuum evaporating on this germanium layer. a step of forming a nickel layer by vacuum evaporation on the nickel layer; and a step of forming an aluminum layer on the nickel layer by vacuum evaporation. So 450
A method for forming an ohmic electrode of N-type gallium arsenide, comprising a step of heat treatment at a temperature of 550°C to 550°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54053906A JPS5950213B2 (en) | 1979-04-27 | 1979-04-27 | N-type gallium arsenide ohmic electrode and its formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54053906A JPS5950213B2 (en) | 1979-04-27 | 1979-04-27 | N-type gallium arsenide ohmic electrode and its formation method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20551187A Division JPS63126272A (en) | 1987-08-18 | 1987-08-18 | Formation of ohmic electrode of n-type gallium arsenide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55145366A JPS55145366A (en) | 1980-11-12 |
| JPS5950213B2 true JPS5950213B2 (en) | 1984-12-07 |
Family
ID=12955751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54053906A Expired JPS5950213B2 (en) | 1979-04-27 | 1979-04-27 | N-type gallium arsenide ohmic electrode and its formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5950213B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0130975Y2 (en) * | 1984-05-30 | 1989-09-22 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57114229A (en) * | 1981-01-07 | 1982-07-16 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of ohmic electrode |
| JPS63126272A (en) * | 1987-08-18 | 1988-05-30 | Mitsubishi Electric Corp | Formation of ohmic electrode of n-type gallium arsenide |
| WO1989004057A1 (en) * | 1987-10-20 | 1989-05-05 | Bell Communications Research, Inc. | Epitaxial intermetallic contact for compound semiconductors |
| SG10201710035XA (en) | 2013-11-19 | 2018-01-30 | Hyun Chang Lee | Mobile electric leakage detection device and method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5063877A (en) * | 1973-09-26 | 1975-05-30 | ||
| JPS54134558A (en) * | 1978-04-10 | 1979-10-19 | Nec Corp | Semiconductor device |
-
1979
- 1979-04-27 JP JP54053906A patent/JPS5950213B2/en not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5063877A (en) * | 1973-09-26 | 1975-05-30 | ||
| JPS54134558A (en) * | 1978-04-10 | 1979-10-19 | Nec Corp | Semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0130975Y2 (en) * | 1984-05-30 | 1989-09-22 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55145366A (en) | 1980-11-12 |
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