JPS5950106B2 - Electrode structure of semiconductor devices - Google Patents

Electrode structure of semiconductor devices

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Publication number
JPS5950106B2
JPS5950106B2 JP51123580A JP12358076A JPS5950106B2 JP S5950106 B2 JPS5950106 B2 JP S5950106B2 JP 51123580 A JP51123580 A JP 51123580A JP 12358076 A JP12358076 A JP 12358076A JP S5950106 B2 JPS5950106 B2 JP S5950106B2
Authority
JP
Japan
Prior art keywords
layer
metal
electrode
metal layer
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51123580A
Other languages
Japanese (ja)
Other versions
JPS5348670A (en
Inventor
郁郎 福田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
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Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP51123580A priority Critical patent/JPS5950106B2/en
Publication of JPS5348670A publication Critical patent/JPS5348670A/en
Publication of JPS5950106B2 publication Critical patent/JPS5950106B2/en
Expired legal-status Critical Current

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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
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    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2924/01082—Lead [Pb]

Description

【発明の詳細な説明】 この発明はリードワイヤとの間のボンディング性を高め
た半導体素子の電極構造に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrode structure for a semiconductor element that has improved bonding properties with lead wires.

半導体素子たとえばＧａＰ発光素子は、第１図ａ、ｂに
示す様なチップ構造が一般的である。すなわち、Ｎ型の
ＧａＰ基板１上に液相成長などによりＰ型のＧａＰ層２
を成長させてＰＮ接合面３を形成する。４、５は、それ
ぞれＰ型側、Ｎ型側に形成した電極取出し用の金属電極
である。A semiconductor device such as a GaP light emitting device generally has a chip structure as shown in FIGS. 1a and 1b. That is, a P-type GaP layer 2 is formed on an N-type GaP substrate 1 by liquid phase growth or the like.
is grown to form the PN junction surface 3. 4 and 5 are metal electrodes for electrode extraction formed on the P-type side and the N-type side, respectively.

これら金属電極４、５を形成する金属材料は、通常素子
表面でＧａＰとオーミックコンタクトを形成すること、
熱伝導度が高く蒸着等による電極形成が容易であること
、さらに熱圧着法等の電極接続（リードワイヤとの間の
ボンディング）に適していることが必要である。第２図
ａ−ｅは上記金属電極のうちＰ型側に形成する金属電極
４の平面形状を示している。The metal materials forming these metal electrodes 4 and 5 usually form ohmic contact with GaP on the element surface;
It is necessary that the material has high thermal conductivity and that electrode formation by vapor deposition or the like is easy, and that it is suitable for electrode connection (bonding with lead wires) such as thermocompression bonding. FIGS. 2a to 2e show the planar shape of the metal electrode 4 formed on the P-type side of the metal electrodes.

ここに示される形状は、第１にリードワイヤとして用い
るＡｕあるいはＡｌ等の金属細線（２５〜５０μφ）と
のボンディングが容易であること、第２にＧａＰ発光素
子ではＰＮ接合面３付近で発光した光を外部にとりだし
やすくするうえで電極面積はできるだけ小さくすること
、第３にＰＮ接合面３を流れる電流の局部的集中を排す
るうえで素子全面に電流が拡散しやすい形状とすること
等の必要条件を満している。ＧａＰ発光素子では、従来
からこの種の必要を満すために金属材料としては一般に
不純物を添加した金（Ａｕ）を使用している。The shape shown here is, firstly, easy to bond with a thin metal wire (25 to 50μφ) such as Au or Al used as a lead wire, and secondly, in the GaP light emitting element, light is emitted near the PN junction surface 3. In order to make it easier to extract light to the outside, the electrode area should be made as small as possible, and thirdly, in order to eliminate local concentration of the current flowing through the PN junction surface 3, the shape should be made so that the current can easily spread over the entire surface of the element. Meets the requirements. GaP light emitting devices have conventionally used impurity-doped gold (Au) as the metal material to meet this type of need.

すなわち、Ｐ型側の金属電極４はアクセプタとなる不純
物たとえばＺｎ、Ｂｅ等を添加した金を、Ｎ型側の金属
電極５はドナーとなる不純物たとえばＳｉ等を添加した
金を用い、それぞれの面に蒸着するようにしていた。第
３図は、Ｐ型側の金属電極４の従来の構造を示す側断面
図である。Ｐ型のＧａＰ層２の上には、約０．５〜２．
０％のＢｅを含有するＡｕ合金４、が〜０．５μ程度の
厚さで蒸着され、さらに不純物を含まない純金（Ａｕ）
４、が０．３〜２．０μ蒸着されている。これらは、順
次にＧａＰ層２上に全面被着されたうえ、写真食刻法に
よつて所定の形状（第２図ａ乃至ｅに示される如きもの
）に形成される。その後、５００〜５５０℃の熱処理で
オーミックコンタクトを得、ダイヤモンド、ブレード、
スラリー等によつて個別素子としてチップに分割される
。このような従来の金属電極の構造は、次の欠点が上記
Ａｕ−Ｂｅ合金層４、上にＡｕ層４０を積層した場合に
は曲型的にみられる。That is, the metal electrode 4 on the P-type side is made of gold doped with an impurity such as Zn or Be to serve as an acceptor, and the metal electrode 5 on the N-type side is made of gold doped with an impurity such as Si to serve as a donor. It was designed to be vapor-deposited. FIG. 3 is a side sectional view showing the conventional structure of the metal electrode 4 on the P-type side. On the P-type GaP layer 2, about 0.5 to 2.
Au alloy 4 containing 0% Be is deposited to a thickness of ~0.5μ, and pure gold (Au) containing no impurities is deposited.
4, is deposited to a thickness of 0.3 to 2.0μ. These are sequentially deposited on the entire surface of the GaP layer 2 and formed into predetermined shapes (as shown in FIGS. 2a to 2e) by photolithography. After that, ohmic contact is obtained by heat treatment at 500-550℃, diamond, blade,
It is divided into chips as individual elements using slurry or the like. The structure of such a conventional metal electrode has the following drawbacks when the Au layer 40 is laminated on the Au--Be alloy layer 4 and the metal electrode has a curved shape.

すなわち、Ａｕ一Ｂｅ合金＋Ａｕを一体化した金属層よ
りも金（Ａｕ）層だけのものがリードワイヤとのボンデ
イング性に優れていて、従来の電極は金属細線とのボン
デイングが比較的困難であつた。しかも、ボンデイング
性を高めるべくＡｕ層を厚く蒸着すれば、Ａｕ−Ｂｅ合
金＋Ａｕ層は１〜２μ程度の厚さをもつ金属電極となる
から、写真食刻法でのエツチングで微細パターンを形成
するとサイドエツチングによつて第４図に示す様な断面
構造となり、平面形状の幅が２０μ以下のときに電極パ
ターンが切断されるおそれがあつた。また、金属電極の
エツチングには、シアン系のエツチング液を７０〜８０
℃に加熱して用いるため、エツチング時間が長くなると
レジストが剥離したり、あるいは、Ａｕ−Ｂｅ層４，に
蒸着されたＡｕ層４２が剥離しやすくなる。さらに、こ
れら金属層４，，４。の蒸着条件が正確に制御されない
と、リードワイヤのボンデイングによつて加わる熱、圧
力等で上層のＡｕ層４２が剥離することもあつた。この
発明は上記の点に鑑みなされたもので、オーミツクコン
タクトを形成す第１の金属層中に含まれる不純物原子が
、第２の金属層に拡散してボンデイング性を劣下させる
のを防止し、リードワイヤのボンデイング工程の能率を
改善するようにした半導体素子の電極構造を提供するこ
と力泪的である。In other words, a gold (Au) layer alone has better bonding properties with a lead wire than a metal layer that integrates Au-Be alloy + Au, whereas conventional electrodes are relatively difficult to bond with thin metal wires. Ta. Moreover, if the Au layer is deposited thickly to improve bonding properties, the Au-Be alloy + Au layer becomes a metal electrode with a thickness of about 1 to 2 μm, so it is possible to form a fine pattern by etching using photolithography. The side etching resulted in a cross-sectional structure as shown in FIG. 4, and when the width of the planar shape was less than 20 μm, there was a risk that the electrode pattern would be cut. For etching metal electrodes, use cyan-based etching solution at 70 to 80%.
Since it is heated to a temperature of .degree. C., the resist may peel off if the etching time is prolonged, or the Au layer 42 deposited on the Au--Be layer 4 may easily peel off. Furthermore, these metal layers 4,,4. If the deposition conditions were not accurately controlled, the upper Au layer 42 could peel off due to the heat, pressure, etc. applied during lead wire bonding. This invention was made in view of the above points, and prevents impurity atoms contained in the first metal layer forming an ohmic contact from diffusing into the second metal layer and deteriorating bonding properties. However, it is desirable to provide an electrode structure for a semiconductor device that improves the efficiency of the lead wire bonding process.

以下ではこの発明をＧａＰ発光素子のＰ型側電極として
説明するが、これに限定してなされた発明ではなく、と
りわけ狭い面積に確実にワイヤボンデイングを行なう必
要がある半導体素子に好適するものである。This invention will be described below as a P-type side electrode of a GaP light emitting device, but the invention is not limited to this, and is particularly suitable for semiconductor devices that require reliable wire bonding in a narrow area. .

すなわち、第５図ではＮ型のＧａＰ基板１１とＰ型のＧ
ａＰ層１２とによつてＰＮ接合が形成され、これを発光
させるためにＧａＰ層１２上にＢｅを０．５〜２．０％
含有したＡｕ合金層１３を〜０．５μ、このＡｕ合金層
１３上にＢｅの拡散を防止する金属層たとえばＰｔの層
１４を〜１．０μ、この層１４上に不純物をほとんど含
まない純金層１５を０．３〜２．０μ順次に蒸着して積
層している。第１の金属層たるＡｕ合金層は不純物原子
を含むために半導体基板つまりＧａＰ層１２と良好にオ
ーミツクコンタクトを形成し、第２の金属層たる純金層
１５は、第３の金属層たるＴｉ，Ｐｔ等の層１４により
Ｂｅの拡散が阻子されているのでその蒸着時およびワイ
ヤボンデイング時にも常に良好なボンデイング性を保持
する。第３図に示した様に、従来の電極構造は、オーミ
ツクコンタクトを形成する合金層４，と金属４２とが直
接接触しているので、これらの接続面から金層４。That is, in FIG. 5, an N-type GaP substrate 11 and a P-type G
A PN junction is formed by the aP layer 12, and 0.5 to 2.0% Be is added on the GaP layer 12 to make it emit light.
On this Au alloy layer 13, a metal layer 14 for preventing Be diffusion, such as a Pt layer 14, is placed on ~1.0μ, and on this layer 14 is a pure gold layer containing almost no impurities. 15 is sequentially deposited and laminated to a thickness of 0.3 to 2.0 μm. The Au alloy layer, which is the first metal layer, contains impurity atoms and forms good ohmic contact with the semiconductor substrate, that is, the GaP layer 12, and the pure gold layer 15, which is the second metal layer, forms good ohmic contact with the semiconductor substrate, that is, the GaP layer 12. Since the diffusion of Be is inhibited by the layer 14 made of , Pt, etc., good bonding properties are always maintained during vapor deposition and wire bonding. As shown in FIG. 3, in the conventional electrode structure, the alloy layer 4 and the metal 42 forming an ohmic contact are in direct contact with each other, so that the gold layer 4 is separated from the connecting surface of these.

に不純物原子が拡散される。このために、ボンデイング
性を良好に保持するためには金層４。を必要以上に厚く
形成しなくてはならなかつた。ところが、上記実施例に
示される様にこの発明によれば、Ｂｅ原子の拡散を防止
すべくＰｔの層１４を介在させることによつて、電極全
体の厚さは必要最小限に押えられる。そして、蒸着工程
が１回増加するとはいえ、リードワイヤに対するボンデ
イング性が著しく向上し、ボンデイング工程が容易かつ
簡略化され、製品の信頼性が高まる。Impurity atoms are diffused into the For this reason, a gold layer 4 is required to maintain good bonding properties. had to be made thicker than necessary. However, as shown in the above embodiments, according to the present invention, the thickness of the entire electrode can be kept to the necessary minimum by interposing the Pt layer 14 to prevent the diffusion of Be atoms. Although the number of vapor deposition steps increases by one, the bonding properties to lead wires are significantly improved, the bonding process is easy and simplified, and the reliability of the product is increased.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図Ａ，ｂはＧａＰ発光素子の形状、構成を示す図、
第２図ａ−ｅはそれぞれＧａＰ発光素子の電極形状を示
す平面図、第３図は従来の電極構造を示す側断面図、第
４図はサイドエツチングされた電極を示す側断面図、第
５図はこの発明の一実施例を示す電極構造の側断面図で
ある。 １１・・・Ｎ型のＧａＰ基板、１２・・・Ｐ型のＧａＰ
層、１３・・・第１の金属層、１４・・・第３の金属層
、１５・・・第２の金属層。FIGS. 1A and 1B are diagrams showing the shape and configuration of a GaP light emitting device,
2A to 2E are plan views showing electrode shapes of a GaP light emitting device, FIG. 3 is a side cross-sectional view showing a conventional electrode structure, FIG. 4 is a side cross-sectional view showing a side-etched electrode, and FIG. The figure is a side sectional view of an electrode structure showing an embodiment of the present invention. 11...N-type GaP substrate, 12...P-type GaP
layer, 13... first metal layer, 14... third metal layer, 15... second metal layer.

Claims (1)

【特許請求の範囲】[Claims] １ 半導体素子の一平面でオーミックコンタクトを形成
するＡｕ−Ｂｅ合金からなる第１の金属層と、この金属
層に積層された純度の高いＡｕからなる第２の金属層と
、これら第１、第２の金属層間に介在されたＰｔからな
り第１の金属層に含まれるＢｅ原子が第２の金属層に拡
散されることを防止する第３の金属層とからなることを
特徴する半導体素子の電極構造。1 A first metal layer made of an Au-Be alloy that forms an ohmic contact on one plane of a semiconductor element, a second metal layer made of high-purity Au laminated on this metal layer, and these first and second metal layers. and a third metal layer made of Pt interposed between two metal layers and preventing Be atoms contained in the first metal layer from being diffused into the second metal layer. Electrode structure.
JP51123580A 1976-10-15 1976-10-15 Electrode structure of semiconductor devices Expired JPS5950106B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51123580A JPS5950106B2 (en) 1976-10-15 1976-10-15 Electrode structure of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51123580A JPS5950106B2 (en) 1976-10-15 1976-10-15 Electrode structure of semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5348670A JPS5348670A (en) 1978-05-02
JPS5950106B2 true JPS5950106B2 (en) 1984-12-06

Family

ID=14864095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51123580A Expired JPS5950106B2 (en) 1976-10-15 1976-10-15 Electrode structure of semiconductor devices

Country Status (1)

Country Link
JP (1) JPS5950106B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4366186A (en) * 1979-09-27 1982-12-28 Bell Telephone Laboratories, Incorporated Ohmic contact to p-type InP
JPS57115864A (en) * 1981-01-12 1982-07-19 Toshiba Corp Compound semiconductor device
JPS5812380A (en) * 1981-07-15 1983-01-24 Toshiba Corp Light emitting diode device
JPS5821821A (en) * 1981-08-03 1983-02-08 Toshiba Corp Manufacture of compound semiconductor device
DE69021438T2 (en) * 1989-05-16 1996-01-25 Marconi Gec Ltd Method for producing a flip-chip solder structure for arrangements with gold metallization.

Also Published As

Publication number Publication date
JPS5348670A (en) 1978-05-02

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