JPS5949995A - Information storing medium - Google Patents
Information storing mediumInfo
- Publication number
- JPS5949995A JPS5949995A JP57161430A JP16143082A JPS5949995A JP S5949995 A JPS5949995 A JP S5949995A JP 57161430 A JP57161430 A JP 57161430A JP 16143082 A JP16143082 A JP 16143082A JP S5949995 A JPS5949995 A JP S5949995A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- film
- substrate
- information storage
- mixed film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25706—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing transition metal elements (Zn, Fe, Co, Ni, Pt)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25708—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 13 elements (B, Al, Ga)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25713—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing nitrogen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25715—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25718—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing halides (F, Cl, Br, l)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2531—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、レーザービーム等の光を照射するととによっ
て情報を記録あるいはＦＳ生する情報記１意部拐に係り
、特に吸湿にょる反シや変形が小さいプラスチック基板
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an information recorder that records information or generates a FS by irradiating light such as a laser beam, and particularly relates to a plastic substrate that has little resistance or deformation due to moisture absorption. .
１蓋来、レーザービーム等の光を照射することによって
情報を記録あるいはＩ１１牛する、いわゆる）ＩＣ。Since then, so-called ICs have been used to record or record information by irradiating light such as laser beams.
ア５イスクの基板としては、ガラスやプラスデックの円
板が用いられている。グラスチック基板は、ガラス基板
に比較して、成形加圧が容錫であり、取り扱い中に破旧
する危険性が少ないばかりでなく、軽）■かつ安価とい
う点で、きわめて有利である。グラスチック基板の中で
も、竹に一アクリル基板は透明性にすぐれており、基板
側から光を照射する場合の基板として多用されている。As the substrate for the A5 disk, a glass or plus deck disc is used. Compared to glass substrates, glass substrates are extremely advantageous in that they can be molded under relatively small pressure, are less likely to break during handling, and are also lightweight and inexpensive. Among the glass substrates, bamboo acrylic substrates have excellent transparency and are often used as substrates for irradiating light from the substrate side.
（２かし、一般にプラスチック基板は吸侵性を有し、特
にアクリル基板は吸湿度が高く、そのために、基板上に
情報記録用薄膜が形成された場合、両面での吸湿…゛が
異なるために 両面の伸縮の違いにより基板に反りや変
形が生じる。この反りゃ変形が大きい場合には、レーザ
ービーム等の光の焦点を薄膜上に結ばせ情報の記録ある
いはＩＩ＋生を行う際に、光学的記録再生装置の自動焦
点制御の範囲から外れて記録や再生が実質的にできなく
なったシ、基板を通してレーザー光を照射する場合に、
収差を生じ、実用上の障害となるなどの問題が生ずる。(2) However, plastic substrates generally have absorbency, and acrylic substrates in particular have high moisture absorption, so when a thin film for information recording is formed on the substrate, the moisture absorption on both sides is different. Warpage and deformation occur in the substrate due to the difference in expansion and contraction on both sides.If the warp and deformation are large, optical When the laser beam is irradiated through the substrate, the recording and reproducing device becomes out of the automatic focus control range and becomes virtually impossible to record or reproduce.
This causes problems such as aberrations and impediments to practical use.
このような基板の反シや変形を防ぐには、両面の吸湿度
差を縮めることが望ましく、そのために形成された薄膜
とは反対側の基板表面あるいは基板の全表面を、無機質
もしくは有機質の薄膜で被覆することが従来行われてい
る。無機物としては、主にＳ、ｉ０２、ｈｔ２ｏ３やＭ
ｇｔ＋’ ２などの金属化合物が用いられ、また有機
物としては、主にシリコーン樹脂、塩化ビニル樹脂やフ
ッ素系ｍ脂などの樹ｊｊａ体が用いられている。これら
の物質は単層あるいは積層の薄膜に形成される。In order to prevent such warping and deformation of the substrate, it is desirable to reduce the difference in moisture absorption between the two surfaces.For this purpose, the surface of the substrate opposite to the thin film formed, or the entire surface of the substrate, is coated with an inorganic or organic thin film. Conventionally, it has been covered with Inorganic substances mainly include S, i02, ht2o3 and M
Metal compounds such as gt+'2 are used, and as organic substances, resins such as silicone resins, vinyl chloride resins, and fluorine-based resins are mainly used. These materials are formed into a single layer or a laminated thin film.
しかし、このような無機質や有機質の被膜を形成させる
従来の方法では、防湿効果や膜質の点でまだ十分満足し
うるものとはいえない。すなわイつ、無機質被膜の場合
は、反りや変形を有効におさえるためには、数μｍの被
膜厚みが必要であるが、そのような膜厚にすると、内部
応力によシ被膜自体にクラックが入りやすいばかりでな
く、被膜が着色１−で透明性が阻害されるため、基板側
から光を照射する場合に、記録或いは再生に好ましくな
い結果を招く。また、これらの無機′ａ被被膜、通常、
電子線加熱貞空蒸着、スパッタリングやイオンブレーテ
ィングなどの真空蒸着法により形成されるが、厚い被膜
を形成させる場合には、この被膜形成の段階で、熱輻射
によってプラスチック基板の温度り昇が大きくなり、基
板が熱変形しゃずいという欠点もある。一方、樹脂系有
機質の被膜を形成さぜる場合は、スピンナー等で部子に
塗布できる利点はあるが、無機質被膜に比べ防湿効果が
かなり劣るので実用的でない。However, conventional methods for forming such inorganic or organic films are still not fully satisfactory in terms of moisture-proofing effect and film quality. In other words, in the case of inorganic coatings, a coating thickness of several micrometers is required to effectively suppress warping and deformation, but if the coating is made to such a thickness, the coating itself may crack due to internal stress. Not only is it easy to get into the film, but the coating is colored 1-, which impairs its transparency, which leads to unfavorable recording or reproduction results when light is irradiated from the substrate side. In addition, these inorganic 'a' coatings are usually
It is formed by vacuum evaporation methods such as electron beam heating vacuum evaporation, sputtering, and ion blating, but when forming a thick film, the temperature of the plastic substrate increases significantly due to thermal radiation during the film formation stage. However, there is also the drawback that the substrate is susceptible to thermal deformation. On the other hand, when forming a resin-based organic film, it has the advantage of being able to be applied to parts using a spinner or the like, but it is not practical because the moisture-proofing effect is considerably inferior to that of an inorganic film.
本発明者らは、防湿効果にすぐれた無機質被膜について
、上記の欠点を克服すべく鋭意検討を行なった結果、金
属１ヒ合物と金属の混合膜により、１μｍ以下の薄い被
膜で反シや変形を抑えることができることを見い出し本
発明をなすに至った。The inventors of the present invention have conducted intensive studies on inorganic coatings with excellent moisture-proofing effects in order to overcome the above-mentioned drawbacks. As a result, the inventors have found that a mixed film of a metal compound and a metal can provide moisture resistance with a thin coating of 1 μm or less. It was discovered that deformation can be suppressed, and the present invention was developed.
すなわち、本発明は、プラスチック基板上に薄膜を設け
、該薄膜に光を照射して情報を記録又ｉｄ再生する情報
記憶部材ＩＩこおいて、該基板の露出面を金属化合物と
金属との混合膜で被覆したことを特徴とする情報記憶部
（オを提供するものである。That is, the present invention provides an information storage member II in which a thin film is provided on a plastic substrate and information is recorded or ID reproduced by irradiating the thin film with light. The present invention provides an information storage unit characterized by being coated with a film.
本発明において金属化合物と金属との混合膜で被覆され
る基板の露出面とは、プラスチック基板の表面で火気に
接触する可能性のあるもの全てをいうが、この露出面は
必ずしも全部が被覆されている必要はなく、その大部分
が被覆されていれば十分である。また、この基板の露出
面以外の表面、例えば記録媒体膜で被覆されている表面
や、記録媒体膜の表面などは、特に金属化合物と金属と
の混合層で被覆する必要はないが所望ならば被覆するこ
ともできる。In the present invention, the exposed surface of the substrate coated with a mixed film of a metal compound and metal refers to all surfaces of the plastic substrate that may come into contact with fire, but this exposed surface is not necessarily entirely coated. It is not necessary that the area be completely covered, and it is sufficient that most of the area is covered. Further, surfaces other than the exposed surface of this substrate, such as the surface coated with the recording medium film or the surface of the recording medium film, do not particularly need to be coated with a mixed layer of a metal compound and metal, but if desired. It can also be coated.
本発明の情報記憶部材に用いるプラスチック基板として
は、主として以下の３種類のものがある。There are mainly three types of plastic substrates used in the information storage member of the present invention:
第一は、両表面が平滑なプラスチック基板であり、キャ
スト法やインジェクション法によって作製される。この
種の基板を情報記憶部材として用いる場合は、レーザー
光あるいはレーザー光と印加電磁場とによって、物理的
変化あるいは化学的変化を生じ、孔や元の薄膜とは光学
！１か性の異なるビット形成しうる薄膜（以Ｆ、こｉＬ
を記録媒体膜と称する）を・基板１−に形１３’ｊ、
Ｌ、この記録媒体膜にレーザー）Ｙ、を照１すすること
によって、情り１シを記録あるい＆１、内生する。（千
類のものである。第一は、片側表面が’Ｆ ｆＶ＋な基
板のもう一方の表面にあらかじめ、案内溝や情報検索用
のビットを形成した、いわゆるプレグルーブ入シのプラ
スグーツク基板であり、インジュク／ヨン法や２Ｐ法に
よって作製される。The first type is a plastic substrate with smooth surfaces on both sides, and is manufactured by a casting method or an injection method. When this type of substrate is used as an information storage member, physical or chemical changes occur due to laser light or laser light and an applied electromagnetic field, and the holes and the original thin film are optically changed! A thin film that can form bits of different properties (hereinafter referred to as F)
(referred to as a recording medium film) is formed on the substrate 1- in the form 13'j,
By shining a laser (Y) on this recording medium film, a feeling is recorded or generated internally. (There are thousands of them. The first one is a so-called pre-groove plus gook board in which guide grooves and bits for information retrieval are formed in advance on the other surface of a board with 'F fV+' on one surface. , the Injuk/Yong method or the 2P method.
このｆ千の、′、（板を情報記憶部材として用いる場合
は、前記の場合と同・降で、案内溝や情・）Ｋ検索用の
ビットの設けられた基板表面上に、記録媒体膜を形成し
、この記録媒体膜にレーザー光を照射することによって
、情報を記録あるいは１１１牛する種類のものである。The recording medium film is placed on the surface of the substrate on which the guide grooves and bits for retrieval are provided. This is a type of recording medium in which information is recorded or recorded by forming a recording medium film and irradiating the recording medium film with a laser beam.
第ヨは、片１１１１１表面が下請な基板のもう一方の表
面に、あらかじめ、情（１φに相当するビットを形成し
た、いわゆるビデ飼ディスク用やデジタルオーディオテ
ィスフ用等のプラスチック基板であり、インジエク／ヨ
ン法によって作製される。Part 11111 is a plastic board for so-called bidet discs and digital audio discs, on which a bit corresponding to 1φ has been formed on the other surface of the subcontracted board. / Produced by Yong method.
この種の基板を゛情報記憶部材として用いる場合は、ビ
ットの設けられた基板表面にＡｔなどの金属反射膜を形
成し、この金属反射膜にレーザー光を照射することによ
って、画像や音声などの情報を門生ずる種類のものであ
る。When using this type of substrate as an information storage member, a metal reflective film such as At is formed on the surface of the substrate on which bits are provided, and by irradiating this metal reflective film with laser light, images, sounds, etc. can be recorded. It is the kind that generates information.
」二連１−だ情報記憶部材の基本構造を第１図から第５
図に示す。第１図は、両表面２．３が平滑なプラスチッ
ク基板ｌの上に記録媒体膜４を設けた第一、の構造、第
２図は、片側に平滑な表面３を有するプラスチック基板
ｌの反対側に案内溝や情報検索用のビットを形成しであ
る表面５及びその」−に記録媒体膜４を設けた第一〕の
構造、第３図は、片側に平滑な表面３を有するプラスチ
ック基板１の反対側に情報に相当するビットを形成しで
ある表面６及びその上に金属反射膜７を設けた第三′の
構造を表わす断面図である。The basic structure of the double information storage member is shown in Figures 1 to 5.
As shown in the figure. Fig. 1 shows the structure of a first structure in which a recording medium film 4 is provided on a plastic substrate l with smooth surfaces 2.3 on both sides, and Fig. 2 shows the opposite structure of a plastic substrate l with a smooth surface 3 on one side. Fig. 3 shows a plastic substrate having a smooth surface 3 on one side, which has a surface 5 on which guide grooves and bits for information retrieval are formed, and a recording medium film 4 on its side. 1 is a cross-sectional view showing a structure of a 3' structure in which a bit corresponding to information is formed on the opposite side of the surface 6 and a metal reflective film 7 is provided thereon.
本発明の情報記憶部材の基本構造を説明する上で、説明
を簡単にするために、第１図におけるプラスチック基板
表面２と記録媒体膜４、第２図におけるプラスチック基
板表面５と記録媒体膜４、及び第３図におけるプラスチ
ック表面６と金属反射膜７を一括して、全てを情報構成
層８と称すると、第１図から第３図は、第４図のように
簡略に表わすことができる。When explaining the basic structure of the information storage member of the present invention, in order to simplify the explanation, the plastic substrate surface 2 and the recording medium film 4 in FIG. 1, and the plastic substrate surface 5 and the recording medium film 4 in FIG. , and the plastic surface 6 and metal reflective film 7 in FIG. 3 are collectively referred to as the information structure layer 8, then FIGS. 1 to 3 can be simply represented as shown in FIG. 4. .
木兇明の情報記憶ＦＩＳ４ｎの基本構造は、第５図１で
示すように、プラスチック基板ｌの上に情報構成層８を
設け、他方の平滑表面３の上に金属化合物と金属の混合
膜９を設けた構造、及び第６１図に示すように、プラス
チック基板１の上に情報構成層８を設け、この情報構成
層の表面及びこれとは反対側の基板表面３の表面の両方
に金属化合物と金属の混合膜９を設けた構造で代表さｉ
Ｌる。実際に情報記憶部材とし、で用いる場合の構成例
を第７図及び第８図に示す。第７図では、情報構成層８
が形成された面とは反対側の基板表面全面が金属化合物
と金属の混合膜９で被覆され、第８図では、情報構成層
８及び該層が形成された面と反対ｆｆ１ｌｌ。As shown in FIG. 5, the basic structure of the information storage FIS 4n by Mokaki is that an information component layer 8 is provided on a plastic substrate 1, and a mixed film 9 of a metal compound and a metal is provided on the other smooth surface 3. As shown in FIG. It is represented by a structure in which a mixed film 9 of metal and metal is provided.
L. An example of the configuration when actually used as an information storage member is shown in FIGS. 7 and 8. In FIG. 7, the information structure layer 8
The entire surface of the substrate opposite to the surface on which is formed is covered with a mixed film 9 of a metal compound and metal, and in FIG.
面の全表面が金属化合物と金属の混合膜９で被覆されて
いる。１０は部材を貫通している穴を示している。また
、」二記のほかに、本発明の趣旨を逸脱しない範囲で種
々の変形が可能である。例えば、第９図に示されている
ように、第７図に示した構成をもつ２枚の情報記憶部材
を、情報構成層８を互いに対向させ、スペーサ−１１を
介して接着したサンドインチ構造や、第１０図に示すよ
うに、このサンドイッチ構造において、外表面金てを金
属化合物と金属の混合膜９で被覆した構造等も本発明に
含まれる。また、第１１図に示すように、プラスチック
基板１０両表面を、あらかじめ金属化合物と金属の混合
膜９で被覆しておき、その上に情報構成層を形成する薄
膜１２を設けたものも本発明の変更態様に含まれる。The entire surface of the surface is coated with a mixed film 9 of a metal compound and metal. 10 indicates a hole passing through the member. Further, in addition to the above, various modifications can be made without departing from the spirit of the present invention. For example, as shown in FIG. 9, there is a sandwich structure in which two information storage members having the configuration shown in FIG. Also, as shown in FIG. 10, a structure in which the outer surface of the sandwich structure is coated with a mixed film 9 of a metal compound and a metal is also included in the present invention. Furthermore, as shown in FIG. 11, the present invention also includes a structure in which both surfaces of the plastic substrate 10 are coated in advance with a mixed film 9 of a metal compound and a metal, and a thin film 12 forming an information constituent layer is provided thereon. Included in the changes.
本発明の情報記憶部材は、このように透明プラスチック
基板の片方の表面に情報構成層を設け、その反対側の面
又は反対側の面と表面もしくは情報構成層を含む面の両
面に金属化合物と金属との混合膜を形成させて成るもの
である。In the information storage member of the present invention, an information structure layer is provided on one surface of a transparent plastic substrate, and a metal compound is provided on the opposite surface or both surfaces or surfaces containing the information structure layer. It is formed by forming a mixed film with metal.
本発明の記憶部材に用いられる混合膜形成用金属化合物
としては、Ｂｅ、 Ｂ、 Ｍｇ、 ｋｌ、 Ｓｉ、Ｃａ
、Ｓｃ、 Ｔｉ、 Ｖ、 ＯｒＸＭｎＸＦｅＸＣｏ、
ＮｉＸ０ｕＸＺｎ。The metal compound for forming a mixed film used in the memory member of the present invention includes Be, B, Mg, kl, Si, and Ca.
, Sc, Ti, V, OrXMnXFeXCo,
NiX0uXZn.
Ｇａ、、Ｏｅ、Ａ日、ＳｒＸ Ｙ、ＺｒＸ ＮｂＸ Ｔ
ｃ、’ＲｕＸ Ｒｈ０、Ｐｄ、、Ａｇ、Ｉｎ、Ｓｎ、Ｓ
ｔ、、Ｂａ１ ＬａＶ Ｈ’ｆ、Ｔａ、Ｒｅ。Ga, Oe, A day, SrX Y, ZrX NbX T
c,'RuX Rh0,Pd,,Ag,In,Sn,S
t,, Ba1 LaV H'f, Ta, Re.
ＩｒＸ Ｔｔ、Ｐｂ、Ｂｉ、Ｄ３’％ Ｋｒ、 Ｃ
ｅ、Ｐｍ、Ｋｕ、Ｔｂ’−。IrX Tt, Pb, Bi, D3'% Kr, C
e, Pm, Ku, Tb'-.
Ｈｏ、 ＴｍＸＹｂ、 Ｌｕ、 Ｇｄ、、 Ｎｄ、 Ｐ
ｒ、及びＳｍからなる１１工゛より選ばれた元素の酸化
物、フッ化物、又は窒化物をあげることができる。Ho, TmXYb, Lu, Gd,, Nd, P
Examples include oxides, fluorides, and nitrides of elements selected from the 11 elements consisting of r, and Sm.
寸だ、混合膜を形成する金属としては、Ｂａ。The metal that forms the mixed film is Ba.
Ａｔ、 Ｓｉ、Ｓｃ、Ｔｉ、Ｖ、 Ｏｒ、 Ｍｎ、 Ｆ
、ｅＸＣｏ、Ｎｉ。At, Si, Sc, Ti, V, Or, Mn, F
, eXCo, Ni.
Ｃｕ、 Ｚｎ、 Ｏａ、 Ｇｅ、 ＡＦＴ 、
Ｓｒ、 Ｙ、 ＺｒＸ Ｎｂ、 Ｔ’ｃｓ１り
１１、Ｒｈ、Ｐｄ ％ Ａ ８％ Ｉ ｒ＋ ％ Ｓ
ｒ＋、Ｓ、ｂＸＪＪａ、 Ｉｌｆ 、 Ｔａ。Cu, Zn, Oa, Ge, AFT,
Sr, Y, ZrX Nb, T'cs11, Rh, Pd % A 8% I r+ % S
r+, S, bXJJa, Ilf, Ta.
Ｒｅ１．［ｒ、Ｔ７． Ｐｂ、 Ｂｉ、］）ｙＸＪｉｉ
ｒ、Ｄｄ、 Ｎｄ５Ｐｒ。Re1. [r, T7. Pb, Bi,])yXJii
r, Dd, Nd5Pr.
Ｓｍ、 ＭＯｌＡｌｌ、、 Ｓｅ及び１゛θなどをあげ
ることができろう
混ａ膜を形成する金属化合物と金属の好寸しい組み合せ
は、Ｙ％ Ｉｊａ、 Ｃｅ、 ｐｒ、 Ｎｃｌ、 Ｐｍ
−、、Ｓｍ、ｌｕｕ、 Ｏｄ、 Ｔｂ、 Ｄｙ、 Ｈｏ
、 Ｆｉｒ、 Ｔｍ、Ｙｂ、及びＬｕからなる、いわゆ
る希に類元素の酸化物と、Ａｔ、０ｒＸＣｏ、Ｇａ、
Ｆｅ、 Ｍｎ、 Ｎｉ、 Ｔｉ１Ｖ、及びＢａなどの金
属を組み合わせたものである。Sm, MOlAll, Se, 1゛θ, etc. A suitable combination of metal compounds and metals to form a mixed a film is Y% Ija, Ce, pr, Ncl, Pm.
-,, Sm, luu, Od, Tb, Dy, Ho
, Fir, Tm, Yb, and Lu, so-called rare element oxides, and At, 0rXCo, Ga,
It is a combination of metals such as Fe, Mn, Ni, Ti1V, and Ba.
金属化合物の膜厚としては、２５〜４５０（ＩＡ、金属
の膜厚としでは２５〜５００スが好ましく、混合層全体
の膜厚としては、５０〜５０（ＩＯＸが好ましい。The thickness of the metal compound is preferably 25 to 450 (IA), the thickness of the metal is preferably 25 to 500, and the thickness of the entire mixed layer is preferably 50 to 50 (IOX).
金属化合物や金属の膜厚が２５Ａ以下の場合は、十３）
な防湿効果が得られない。一方、金属化合物の膜厚が４
５００Ｘ以上になるとクラックやはがれを生じ、寸だ、
金属の膜厚が５００Ａ以上になると、はとんどの金属の
場合、混合膜自体の透過率が低下し、基板側から光を照
射する場合に十分な反射再生光が得られなかったり、十
分な記録感度が得られないので好ましくない。If the film thickness of metal compound or metal is 25A or less, 13)
Moisture-proofing effect cannot be obtained. On the other hand, the film thickness of the metal compound is 4
If it exceeds 500X, cracks and peeling will occur, and
When the metal film thickness exceeds 500A, in the case of most metals, the transmittance of the mixed film itself decreases, and when irradiating light from the substrate side, it may not be possible to obtain sufficient reflected reproduction light, or This is not preferable because recording sensitivity cannot be obtained.
混合膜の形成は、金属化合物と金属とをそノｔぞｎ別個
の蒸着用ボート或いはエレクトロンビーム蒸着るつぼに
置き、混合蒸着又は混合スパッタリングさせることによ
シ行うことができる。また、金属化合物と金属との混合
ベレットを用いて抵抗加熱方式、エレクトロンビーム蒸
着方式、イオンブレーティング方式など公知の薄膜形成
方法によっても行うことができる。これらのうち、真空
蒸着方式が簡便に混合膜を形成できるので有利であり、
１０−” Ｔｏｒｒ以下の高真空条件下において、安定
な混合喚ｆ：得ることができる。通常、真空蒸着方式で
形成した膜は、スパッタリング法やイオングレーティン
グ法で形成した膜に比べ、プラスチック基板との密着性
がかなり劣るとされているが、本発明における金属化合
物と金属との混合膜は、真空蒸着方式でも上針な密着性
を得ることができる。The mixed film can be formed by placing the metal compound and the metal in separate evaporation boats or electron beam evaporation crucibles and performing mixed evaporation or mixed sputtering. Alternatively, the thin film forming method can be performed using a mixed pellet of a metal compound and a metal using a known thin film forming method such as a resistance heating method, an electron beam evaporation method, or an ion blating method. Among these, the vacuum evaporation method is advantageous because it can easily form a mixed film.
A stable mixture can be obtained under high vacuum conditions of 10-" Torr or less. Films formed by vacuum evaporation are usually more stable on plastic substrates than films formed by sputtering or ion grating. However, the mixed film of the metal compound and metal according to the present invention can obtain excellent adhesion even by vacuum deposition.
一般に、プラスチックでできた板状体やフィルムの片面
に薄膜を設けたものを、乾燥状態或いは、多湿状態の環
境下に放置すると、わん曲してし捷う。％に、フィルム
状のものでは、極端な場合には、まきついてしまう。例
えば、第１２図に示すように、プラスチック板ｌの片面
に金属膜１３を蒸着形成したものを多湿な環境下に放置
すると、金属膜１３は水分をほとんど吸収しないが、被
覆されていないプラスチック而１４は水分を吸収して膨
潤し、プラスチック板がわん曲してしまう。Generally, if a plastic plate or film with a thin film on one side is left in a dry or humid environment, it will bend and fold. %, and in extreme cases, if it is in the form of a film, it will cling to it. For example, as shown in FIG. 12, if a plastic plate l with a metal film 13 deposited on one side is left in a humid environment, the metal film 13 absorbs almost no moisture, but the uncoated plastic No. 14 absorbs water and swells, causing the plastic plate to bend.
情報構成層を有する面の反対側のプラスチック基板の表
面又は該情報構成層を有する面と反対側の面に、金属化
縫物と金属の混合膜を設けたものが、非常に薄い膜厚で
、上述の如き基板のわん曲、すなわち反シや変形を有効
に抑えることができる理由は定かではないが、金属化合
物中に金属原子が入り込み、金属化合物分子相互が金属
原子を介して強く結合し、Ｈ２０分子の侵入が防止され
るものと考えられる。特に、希土類元素の酸化物と特定
の金属は、非常にち密な嘆となシ、Ｈ２０分子の侵入防
止効果が大きいと考えられる。A mixed film of metallized sewing material and metal is provided on the surface of the plastic substrate opposite to the surface having the information component layer, or the surface opposite to the surface having the information component layer, with a very thin film thickness. Although it is not clear why the above-mentioned curvature of the substrate, that is, warpage and deformation, can be effectively suppressed, the reason is that metal atoms enter the metal compound and the metal compound molecules are strongly bonded to each other through the metal atoms. , H20 molecules are thought to be prevented from entering. In particular, rare earth element oxides and specific metals are considered to have a large effect on preventing the intrusion of H20 molecules since they are very dense.
このように、プラスチアクを基板とし、その片方の面に
形成された情報構成層を有する面の反対の面に少なくと
も金属化合物と金属との混合膜を設けた本発明の情報記
憶部材は、基板の吸湿性が顕著に改善され、反りや変形
が極めて小さく、しかも反射率や記録感度などの機能特
性を低下させることのない望ましいものである。As described above, the information storage member of the present invention uses Plastiac as a substrate and has at least a mixed film of a metal compound and a metal on the opposite side of the surface having the information structure layer formed on one side of the substrate. It is desirable that hygroscopicity is significantly improved, warpage and deformation are extremely small, and functional characteristics such as reflectance and recording sensitivity are not deteriorated.
本発明において混合膜の被覆は、表面全体に形成させる
ことが望ましいが、表面の大部分に形成させて、実用上
支障のない程度に基板の反りを抑制することもできる。In the present invention, it is preferable that the mixed film be coated on the entire surface, but it can also be coated on most of the surface to suppress warping of the substrate to an extent that does not cause any practical problems.
以下、実施例により本発明をさらに詳細に説明する。Hereinafter, the present invention will be explained in more detail with reference to Examples.
実施例１
インジェクション法によって作製した、厚さ１ 、２
ｍｍ、直径３０ Ｃｎｌの片側表面に情報に相当するビ
ットを形成したポリメチルメタクリレート（ＰＭＭ’Ａ
）の円板を、まずビットを有する表面が蒸着されるよ
うに真空蒸着機槽内にセントした。Example 1 Fabricated by injection method, thickness 1, 2
mm, diameter 30 Cnl, polymethyl methacrylate (PMM'A) with bits corresponding to information formed on one side surface.
) was placed in a vacuum deposition machine bath so that the surface with the bits was deposited first.
ディスクは、装置の中央において回転できるようになっ
ており、装置内には、回転の中心軸２中心として加熱蒸
着ボートと電子ビーム装置を備えている。この加熱ボー
トにＡｔを入れ、電子ビーム蒸着装置のるつはｔ・こｐ
、ｔ２ｏ５を入れた。装置内′と２ Ｘ １Ｏ−６Ｔｏ
ｒｒの真空度とした後、基板を回転速度１２０ｒｐｍで
回転させながら、まずＡｔを５＋１００Ａの膜厚に蒸着
した。次に、この基板をＪＰｌり出して裏返し、再び真
空蒸着機運内にセットし、装置内’、’ｒ−２Ｘ １Ｏ
−６Ｔｏｒｒの真空度とした。基板回転速度を１２０ｒ
ｐｍとして、今度はＡｔ２ｏ３とＡｔとを共蒸着方式に
より、均一な混合膜を形成するように蒸着さぜ、Ａｚ２
ｏ３が１００（ＩＡ、 Ａｔが１ （１（ｌスの）昆ば
Ｉｌ莫を形成させた。上記のサンプルと同じ手順で、各
種の金属化合物、すなわち５ｉ０２、工ｎ２０５ 、Ｍ
Ｆ、Ｆ２、Ｓｉ３Ｎ４、Ｌａ２Ｏ３，８ｍ２０５を用い
、そノｔぞれの同様のサンプルを作製した。膜厚のモニ
ターは水晶振動子法で行い、蒸着は短時間で終了した。The disk is rotatable in the center of the apparatus, and the apparatus is equipped with a heated evaporation boat and an electron beam device around a central axis 2 of rotation. Put At into this heating boat, and use T-cop for electron beam evaporation equipment.
, t2o5 was added. Inside the device and 2 x 1O-6To
After setting the vacuum degree to rr, At was first vapor-deposited to a film thickness of 5+100 A while rotating the substrate at a rotation speed of 120 rpm. Next, take out this substrate, turn it over, set it in the vacuum evaporation machine again, and place it inside the device.
The degree of vacuum was -6 Torr. Substrate rotation speed is 120r
As pm, At2o3 and At were co-deposited to form a uniform mixed film, and Az2
O3 was 100 (IA) and At was 1 (l).The same procedure as the above sample was used to form various metal compounds, namely 5i02, n205, M
Similar samples were prepared using F, F2, Si3N4, La2O3, and 8m205. The film thickness was monitored using a crystal oscillator method, and the deposition was completed in a short time.
比較例として、実施例と同じＰＭＭＡ円板にＡｔを５ｏ
ｏｏＸ蒸着しただけのサンプル及びＰＭＭＡ円板にＡＡ
を５０００ Ａ蒸着した後、その裏面にＡｔ２０５を１
ｏｏｏＸ蒸着したサンプル、並びに塩化ビール樹脂をス
ピンコード法で１０μｍ厚にコートしたサンプルをそれ
ぞれ作製し７た。As a comparative example, 5o of At was added to the same PMMA disk as in the example.
AA on the sample with only ooX vapor deposition and on the PMMA disk.
After depositing 5000 A of At205 on the back side, 1
A sample coated with oooX vapor-deposited and a sample coated with chlorinated beer resin to a thickness of 10 μm using a spin-coding method were prepared.
このようにして作製したサンプルを作製直後に、温度２
０℃、相対湿度９０チの恒温恒湿槽内に入れて、反シの
経時変化を調べた。反りの測定は、定盤上に円板サンプ
ルを静置させ、反りによって生じる円板に垂直な方向へ
の変位すをノギスで測定し、その変位を円板の直径ａに
対する割合ｂ／ａで表わした。Immediately after preparing the sample prepared in this way, the temperature of 2
The specimen was placed in a constant temperature and humidity chamber at 0° C. and relative humidity of 90° C., and changes over time in the mold were examined. To measure the warpage, place the disc sample on a surface plate, measure the displacement in the direction perpendicular to the disc caused by the warp with a caliper, and calculate the displacement as a ratio b/a to the disc diameter a. expressed.
その結果を第１表に示す。表中ｔ ｍａｘは反りが最大
となる時間、（ｂ／ａ）ｍａｘは最犬反シを表わす。The results are shown in Table 1. In the table, t max represents the time when the warpage reaches its maximum, and (b/a) max represents the maximum warpage.
第１３図は、上記サンプルのいくつかについての反り（
ｂ／ａ ）の時間的変化を示すグラフで、曲線ＩはＡｔ
／基板、曲線■はｈｔ７基板／Ａｚ２ｏ３、曲線■はＡ
ｔ／基板／ （Ａｔ２０３ ＋ Ａｔ）及び曲線■はＡ
ｔ／基板／ （Ｓｍ２０３ ＋ ＡＡ）についてのもの
である。Figure 13 shows the warpage (
b/a), curve I is a graph showing the temporal change of At
/ board, curve ■ is ht7 board /Az2o3, curve ■ is A
t/substrate/(At203 + At) and curve ■A
t/substrate/(Sm203 + AA).
裏面にＡｔ２０３あるいは塩化ビニル樹脂を設け／こサ
ンフルは、裏面に何も設けないサンプルに比べ反シは約
％に減少しているが、金属化合物と金属の混合膜を裏面
に設けたサンフルの反りは約１／！〜１／／３に減少し
、かつ反シが最大となる時間は約３〜４倍伸びている。The warpage of Sanflu with At203 or vinyl chloride resin on the back side is reduced to about % compared to the sample with nothing on the back side, but the warpage of Sanflu with a mixed film of metal compound and metal on the back side is reduced to about %. is about 1/! The time period for which the resistance decreases to ~1/3 and reaches its maximum is approximately 3 to 4 times longer.
特に、Ｌａ２Ｏ３とＡｔの混合膜及びＳｍ２Ｏ３とＡｔ
の混合膜を般けたサンプルは他の混合膜を設けたサンプ
ルに比べて、反シが小さい。In particular, a mixed film of La2O3 and At and a mixed film of Sm2O3 and At
The samples with a mixed film have a smaller resistance than the samples with other mixed films.
全てのサンフルにおいて、最大反シが小さいものほど、
反シが最大となる時間は長時間であった。For all Sunfuls, the smaller the maximum anti-shi, the
The time when anti-shi reached its maximum was long.
実施例２
キャスト法によって作製した厚さ１．２間のλ臥の板を
直径３０ ｔｙｎの円板に加工し、実施例１と同様にこ
のＰＭＭＡ円板上に２ Ｘ ’１Ｏ−６Ｔｏｒｒの真空
度においで、Ｔｅを抵抗加熱法で３ｏｏ Ｘ蒸着形成し
たサンプルを８枚作製した。作製した８枚のサンプルの
うち、７枚について、Ｔｅを設けた表面と反対側の基板
表面にそれぞれ、下記の混合膜を共蒸着により形成させ
た。また、残り１枚はＴｅ層と反対側の基板表面に何も
設けず比較サンプルとした。Example 2 A plate with a thickness of 1.2 mm and 30 tyn produced by a casting method was processed into a disk with a diameter of 30 tyn, and as in Example 1, a vacuum of 2 × 1 O-6 Torr was applied to this PMMA disk. At the same time, eight samples were prepared in which 3OOX of Te was vapor-deposited using a resistance heating method. For seven of the eight samples produced, the following mixed films were formed by co-evaporation on the surface of the substrate opposite to the surface on which Te was provided. In addition, the remaining one was used as a comparative sample without providing anything on the surface of the substrate opposite to the Te layer.
共蒸着させた各混合膜の組成は次のとおシである。The composition of each co-deposited mixed film is as follows.
Ｔｉ０２（５００） ＋、Ｆｅ（５０）Ｏｒ２０３（５
００） ＋ Ｆｅ（５０）ＭｇＦ’２（５０，０） ＋
Ｆｅ（５０）Ｙ２Ｏ２（５００） ＋ Ｎ１（１００
）Ｇｄ２０４（５００）、 ＋ Ｎ１（１００）Ｐｒ６
０１４（５００） −１Ｃｏ（１００）Ｏｅ０２（５０
０） 十ｃｏ（ｔｏｏ）カッコ内は膜厚１直（ス）
これ・らのサンプルを実施例［と全く同じ方法で反りの
経時変化を調べたつ反シ測定に入る前に、サンプル作製
直後に、反射率及び記録感度も調べた。こｆ’Ｌらの測
定結果を第２表に示す。Ti02(500) +, Fe(50)Or203(5
00) + Fe(50)MgF'2(50,0) +
Fe(50)Y2O2(500) + N1(100
)Gd204(500), +N1(100)Pr6
014(500) -1Co(100)Oe02(50
0) The film thickness in parentheses is 1. These samples were examined for changes in warpage over time using exactly the same method as in the example. , reflectance and recording sensitivity were also investigated. The measurement results of F'L et al. are shown in Table 2.
記録感度の測定は、以下の方法で行った。すなわち、円
板’ｉ４５０ｒｐｍの速度で回転させ、発振波長８３０
ｎｍの半導体レーザーの光をＰＭＭＡ基板越しに記録面
上・、にレンズでビーム径１μｍまで東光させて、レー
ザー出力パワーを記録表面での強度にして１２ｍＷｉで
変化させながら、５００ｎｓｅｃのパルス幅に変調１〜
たレーザー光で記録を行ない、そのしきい値を記録感度
とした。Recording sensitivity was measured using the following method. That is, the disk is rotated at a speed of 450 rpm, and the oscillation wavelength is 830 rpm.
The light from a semiconductor laser of 100 nm is directed onto the recording surface through a PMMA substrate with a lens to a beam diameter of 1 μm, and the laser output power is changed to the intensity at the recording surface at a rate of 12 mWi, and modulated to a pulse width of 500 nsec. 1~
Recording was performed using a laser beam, and the threshold value was taken as the recording sensitivity.
裏面に混合膜を設けても、反射率及び記録感度には全く
影響がない。反９に関しては、混合膜を設けることによ
り約１／３に減少するが、ここでも、混合膜を形成する
金属化合物が、希土類酸化物の場合に、特に効果が大き
いことが認められる。Even if a mixed film is provided on the back surface, the reflectance and recording sensitivity are not affected at all. As for anti-9, it is reduced to about 1/3 by providing the mixed film, but here too, it is recognized that the effect is particularly large when the metal compound forming the mixed film is a rare earth oxide.
実施例３
実施例２と同様の、キャスト法によって作製［７たＰＭ
ＭＡの円板上に２ Ｘ １Ｏ−６Ｔｏｒｒ（７）真空度
で、Ｔｅを抵抗加熱法により３００久の膜厚に蒸着形成
したサンプルを１４枚作製し７た。作製１．た１４枚の
サンプルのうち、１２枚について、’ｒｅを設けた表面
と反対側の基板表面にそれぞれ、下肥の混合膜を共蒸着
によシ形成させたサンプルを各２枚ずつ作製した。Example 3 Same as Example 2, produced by the casting method [7 PM
Fourteen samples were prepared by vapor depositing Te to a film thickness of 300 mm on MA disks at a vacuum degree of 2 x 1 O-6 Torr (7) using a resistance heating method. Preparation 1. Of the 14 samples obtained, two samples were prepared for each of 12 samples, each having a mixed layer of manure formed by co-evaporation on the surface of the substrate opposite to the surface on which the 're was provided.
Ｍｇｏ （５００）→−ａｒ（ｓｏ）Ｚｒ、２０５（
５００）→−ｃｒ（ｇｏ）Ｌａ２０３（５００） ＋
Ｃ！ｒ（８０）Ｓｍ２０３（５０，０） ＋０ｒ（８０
）Ｇｄ２０３（５００）→−Ｔｉ（１００）Ｄｙ２Ｃ）
５（５００） ＋ ＡＡ（１００）また、残り２枚はＴ
ｅ層と反対側の基板表面に何も設けず比較サンプルとし
た。Mgo (500) → -ar(so)Zr, 205(
500) → -cr(go)La203(500) +
C! r(80)Sm203(50,0) +0r(80
)Gd203(500)→-Ti(100)Dy2C)
5 (500) + AA (100) Also, the remaining two cards are T
A comparative sample was prepared in which nothing was provided on the surface of the substrate opposite to the e-layer.
６へ
これら７種３頃のサンプルについて、各々２枚のサンプ
ルを、Ｔｅ層を互いに対向させ、スペーサーを介して接
着、シ、ザンドイツチ構造とした。6. Of these 7 types and around 3 samples, two samples each were made into a Zandersch structure with the Te layers facing each other and bonded via a spacer.
このようにして作製したザンドイツチν−ンブルを接着
直後に、温度２０℃、相対湿度９’、Ｏｑｂの恒ず晶恒
湿槽内に入れて、反りの経時・変化を調べた。Immediately after adhesion, the thus-produced Sanderger ν-timber was placed in a constant crystal constant humidity chamber at a temperature of 20°C and a relative humidity of 9'Oqb, and changes in warpage over time were examined.
反りの測定Ｑよ、８０φのターンテーブル上にサンドイ
ツヂサンプルを固定し、ターンテーブルを４５Ｏｒｐｍ
で回転させながら、直径１４０ ｍｍφから２８０１１
ＩＩＩＩφにわたって基板表面の変位の変化を測定した
。変位の測定は、以下の方法に従って行った。Warp measurement
While rotating with
The change in displacement of the substrate surface was measured over IIIφ. The displacement was measured according to the following method.
す々わち、第１４図に示すような光学系において、半導
体レーザー１５の光がＰＭＭＡ基板１越しに情報構成層
８に焦点か合った状態にあるときにビーム形状が真円と
なる位置に４分割フォトダイオード１６を配置し、基板
の変位に応じてビーム形状が変化することを利用して、
４分割フォートダイオードの出力の対角同志を加え合わ
せ、その差をエラー信号としで用い、一方対物レンズ１
７を上下−に移動することによって、情報構成層に自動
的に焦点を合わせるシステムにおいて、あらかじめ対物
レンズの駆動信号と変位の較正曲線をつくつ−Ｃおき、
この較正曲線を利用して、測定した対物レンズの駆動信
号から変位を出した。実際は、回転中に面振れを生じる
ので、面振れの中心値を１ｉｌｌｌす、これを変位値と
した。In other words, in the optical system as shown in FIG. 14, when the light from the semiconductor laser 15 is focused on the information structure layer 8 through the PMMA substrate 1, the beam shape is at a position where it becomes a perfect circle. By arranging a 4-split photodiode 16 and utilizing the fact that the beam shape changes according to the displacement of the substrate,
The diagonal outputs of the four-split Fort diodes are added together and the difference is used as an error signal.
In a system that automatically focuses on the information structure layer by moving C up and down, a calibration curve of the driving signal and displacement of the objective lens is created in advance.
This calibration curve was used to calculate the displacement from the measured objective lens drive signal. Actually, since surface runout occurs during rotation, the center value of the surface runout is set to 1ill, and this is used as the displacement value.
このような方法で、前記のサンプルの反りを測定したと
ころ、全て第１５図のような形状の反りとなった。When the warpage of the samples described above was measured using this method, all the warpages were in the shape shown in FIG. 15.
直径１４０胴φから２８０關φにおいて、変位の最大値
と最小値の差をｈとした場合、サンドサンプルの両面で
の）ｌの平均が最大となる時間’ｊ；ｉｎａ、ｘと、そ
の時のｈの平均値ｈｍａＸは第３表のとおりであった。If h is the difference between the maximum and minimum displacement between the diameters of 140 mm and 280 mm, then the time 'j; ina, x at which the average of ) on both sides of the sand sample is maximum, and the time The average value hmaX of h was as shown in Table 3.
裏面に混合膜を設けたサンプルはすべて、裏面に何も設
けないサンプルに比べて、反シは小さく、かつ最犬反シ
を生じる時間は長くなっている。特に、Ｌａ２Ｏ５とＯ
ｒ、及びＳ ｍ ２０５とＯｒの混合膜を設けたサンプ
ルは、特に反シが小さく、裏面に何も設けないサンプル
の、１／！以下に減少している。All of the samples with a mixed film on the back side had a smaller peeling and a longer time to produce the most peeling than the samples with nothing on the back side. In particular, La2O5 and O
The sample with a mixed film of r, S m 205 and Or had a particularly small anti-shield, which was 1/1 that of the sample with nothing on the back side. It has decreased to below.
なお、作製直後の反射率及び記録感度は、実施例２と全
く同じであシ、混合膜を設は−Ｃも、反射率５０％、記
録しきい値７ｍＷと変化なかった。The reflectance and recording sensitivity immediately after fabrication were exactly the same as in Example 2, and even when the mixed film was provided -C, the reflectance was 50% and the recording threshold was 7 mW, which were unchanged.
第１図から第４図は、一般、の情報記憶部材の構造を説
明するだめの断面ｍであ名。
第５図及び第６図は、本発明の情報記憶部材の基本構造
を示した断面図であり、第７図から第１１図は、実際に
情報記憶部材として用いる場合の構成を示した断面図で
ある。
第１２図は、金属膜を設けたプラスチック板を多湿状態
に放置した場合の断面形状を示す。
第１３図は、実施例１の４種のサンプルの反りの経時変
ｆヒを示すグラフである。
第１４図は、サンドサンプルの反りを測定Ｉ〜だ装置の
光学系の概略図である。
第１５図は、実施例３のサンプルの反り形状を示す断面
図である。図中符号かま以下の意味をもつ。
１°゛プラスチツク基板
２．３．５．６、［４・・・プラスチック基板表面４０
１．記録媒体膜 ７・・・金属反則膜８・・情＠
構成層 ９・・混合膜１０・・・穴
１１・°°スペーザー１２・・薄膜 １３
・・・金属膜【５・・・半導体レーザー
１６・・・フォトダイオード
１７・・対物レンズ
１８・・・ビームスプリッタ−
特許出願人 旭化成工業株式会社
代理人同 形 明
第１図 第２図
第３°図 第４図
第５図 第６図1 to 4 are cross-sections m used to explain the structure of a general information storage member. 5 and 6 are sectional views showing the basic structure of the information storage member of the present invention, and FIGS. 7 to 11 are sectional views showing the structure when actually used as an information storage member. It is. FIG. 12 shows the cross-sectional shape of a plastic plate provided with a metal film when it is left in a humid state. FIG. 13 is a graph showing changes in warpage over time of four types of samples of Example 1. FIG. 14 is a schematic diagram of an optical system of an apparatus for measuring warpage of a sand sample. FIG. 15 is a cross-sectional view showing the warped shape of the sample of Example 3. The symbol in the diagram has the following meanings. 1°゛Plastic substrate 2.3.5.6, [4...Plastic substrate surface 40
1. Recording medium film 7...Metal fouling film 8... Information@
Constituent layer 9... Mixed film 10... Hole
11・°°Spacer 12・・Thin film 13
...Metal film [5...Semiconductor laser 16...Photodiode 17...Objective lens 18...Beam splitter Patent applicant Asahi Kasei Kogyo Co., Ltd. Agent Isomorphic Figure 1 Figure 2 Figure 3 °Figure 4Figure 5Figure 6
Claims (1)
射して情報を記録又は再生する情報記憶部側において、
該基板の露出１■を、金属化合物と金属との混合膜で被
覆したことを特徴とする情報記憶部材。 ２ 混合膜を形成する金属化合物が、Ｂｅ、Ｂ、ＭｇＸ
Ａｔ、 ５ｉＸＯａ、 Ｓｃ、 Ｔｉ、ＶＸＯｒ、 Ｍ
ｎ。 Ｆｅ、 Ｃｏ、Ｎ１、Ｃｕ、 ＺｎＸＧａ、 Ｇｅ、
Ａｓ、 Ｓｒ。 Ｙ、 Ｚｒ、 Ｎｂ、 Ｔｃ、 Ｒｕ、 ＲＪＩ、ｐｄ
ＸＡｇ、工ｎ１Ｓｎ、 Ｓｂ、 Ｂａ、 ＬｅＬＸＨｆ
、 Ｔａ、 Ｒｅ、工ｒ、 Ｔｔ。 Ｐｂ、 Ｂｉ、 Ｄｙ、 Ｅｒ、 Ｃｅ、Ｐｍ、 １ｉ
ｊｕ、 Ｔｂ、 Ｈａ、Ｔｍ、 ’Ｙｂ、 Ｌｕ５Ｇｄ
、 Ｎｄ、 、Ｐｒ、及びＳｍからなる群より選ばれた
金属の酸化物、フッ［ヒ物又は窒化物である特許請求の
範囲第１項記載の情報記憶部材。 ３ 混合膜を形成する金属が、Ｂａ、 Ａｔ、 Ｓｉ、
５ｃＸＴｉ、’Ｖ、 Ｏｒ、 Ｍｎ、 Ｆｅ、 Ｃ’ｏ
、Ｎ１、Ｃｕ１Ｚｎ、 ＧａＸＧｅＸＡｓ、Ｓｒ、 Ｙ
、 Ｚｒ、 Ｎｂ、 Ｔｃ。 ＲｕＸ’Ｒｈ、 ＰｄＸＡｇ、■ｎＸＳｎ、 Ｓｂ、Ｌ
ａＸＨｆ。 Ｔａ、 Ｒｅ、 ＩｒＸＴＬＸＰｂ、 Ｂｉ、 Ｄｙ、
Ｂｒ、 Ｇｄ。 Ｎｄ、 Ｐｒ、 ＳｍＸＭｏＸＡｕ、 Ｓｅ、及びｒｅ
からなる群よシ選ばれた金属である特許請求の範囲第１
項記載の情報記憶部材。 ４ 混合膜を形成する金属化合物が、Ｙ、Ｌａ、Ｃｅ、
ＰｒＳＮｄｌＰｍＸＳｍＸｍｕＸＧｄＸＴｂＸＤｙ。 ＨＯｌＥｒ、 Ｔｍ、 Ｙｂ、及びＬｕからなる群よシ
選ばれた金属の酸化物である特許請求の範囲第１項記載
の情報記憶部材。 ５ 混合膜を形成する金属が、Ａｔ、 Ｏｒ、 Ｃ０１
ＧａＸＦｅ、 ＭｎＸＮｉ、 Ｔｉ、 Ｖ、及びＢａか
らなる群より選ばれた金属である特許請求の範囲第１項
記載の情報記憶部拐。[Claims] 1. On the side of an information storage unit that provides a thin film on a plastic substrate and records or reproduces information by irradiating the thin film with light,
An information storage member characterized in that the exposed part 1 of the substrate is coated with a mixed film of a metal compound and a metal. 2 The metal compounds forming the mixed film are Be, B, MgX
At, 5iXOa, Sc, Ti, VXOr, M
n. Fe, Co, N1, Cu, ZnXGa, Ge,
As, Sr. Y, Zr, Nb, Tc, Ru, RJI, pd
XAg, Eng1Sn, Sb, Ba, LeLXHf
, Ta, Re, Engr, Tt. Pb, Bi, Dy, Er, Ce, Pm, 1i
ju, Tb, Ha, Tm, 'Yb, Lu5Gd
The information storage member according to claim 1, which is an oxide, a fluoride, or a nitride of a metal selected from the group consisting of , Nd, , Pr, and Sm. 3 The metals forming the mixed film are Ba, At, Si,
5cXTi, 'V, Or, Mn, Fe, C'o
, N1, Cu1Zn, GaXGeXAs, Sr, Y
, Zr, Nb, Tc. RuX'Rh, PdXAg, ■nXSn, Sb, L
aXHf. Ta, Re, IrXTLXPb, Bi, Dy,
Br, Gd. Nd, Pr, SmXMoXAu, Se, and re
Claim 1, which is a metal selected from the group consisting of
Information storage member described in Section 1. 4 The metal compound forming the mixed film is Y, La, Ce,
PrSNdlPmXSmXmuXGdXTbXDy. The information storage member according to claim 1, which is an oxide of a metal selected from the group consisting of HOlEr, Tm, Yb, and Lu. 5 The metal forming the mixed film is At, Or, C01
The information storage device according to claim 1, wherein the metal is selected from the group consisting of GaXFe, MnXNi, Ti, V, and Ba.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57161430A JPS5949995A (en) | 1982-09-16 | 1982-09-16 | Information storing medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57161430A JPS5949995A (en) | 1982-09-16 | 1982-09-16 | Information storing medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5949995A true JPS5949995A (en) | 1984-03-22 |
Family
ID=15734955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57161430A Pending JPS5949995A (en) | 1982-09-16 | 1982-09-16 | Information storing medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5949995A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS615989A (en) * | 1984-06-21 | 1986-01-11 | Matsushita Electric Ind Co Ltd | Optical information-recording member |
| JPS6198597A (en) * | 1984-10-19 | 1986-05-16 | Sanyo Electric Co Ltd | Photo-recording medium |
| JPS61219692A (en) * | 1985-03-26 | 1986-09-30 | Matsushita Electric Ind Co Ltd | Optical information-recording member |
| JPS62180538A (en) * | 1986-02-04 | 1987-08-07 | Matsushita Electric Ind Co Ltd | Optical disk |
| EP0231672A2 (en) * | 1986-01-29 | 1987-08-12 | Fujitsu Limited | Optical memory device and process for fabricating same |
-
1982
- 1982-09-16 JP JP57161430A patent/JPS5949995A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS615989A (en) * | 1984-06-21 | 1986-01-11 | Matsushita Electric Ind Co Ltd | Optical information-recording member |
| JPH0371034B2 (en) * | 1984-06-21 | 1991-11-11 | Matsushita Electric Ind Co Ltd | |
| JPS6198597A (en) * | 1984-10-19 | 1986-05-16 | Sanyo Electric Co Ltd | Photo-recording medium |
| JPH0363519B2 (en) * | 1984-10-19 | 1991-10-01 | Sanyo Electric Co | |
| JPS61219692A (en) * | 1985-03-26 | 1986-09-30 | Matsushita Electric Ind Co Ltd | Optical information-recording member |
| JPH0371035B2 (en) * | 1985-03-26 | 1991-11-11 | Matsushita Electric Ind Co Ltd | |
| EP0231672A2 (en) * | 1986-01-29 | 1987-08-12 | Fujitsu Limited | Optical memory device and process for fabricating same |
| JPS62180538A (en) * | 1986-02-04 | 1987-08-07 | Matsushita Electric Ind Co Ltd | Optical disk |
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