JPS5947744A - Filler material for ic package - Google Patents
Filler material for ic packageInfo
- Publication number
- JPS5947744A JPS5947744A JP15776982A JP15776982A JPS5947744A JP S5947744 A JPS5947744 A JP S5947744A JP 15776982 A JP15776982 A JP 15776982A JP 15776982 A JP15776982 A JP 15776982A JP S5947744 A JPS5947744 A JP S5947744A
- Authority
- JP
- Japan
- Prior art keywords
- silica
- less
- corrosion
- impurities
- thorium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
- H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
【発明の詳細な説明】
本発明はICのプラスチックパッケージ用フィラー材に
関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to filler materials for plastic packaging of ICs.
従来のICプラスチックパッケージ用フィラー材にはシ
リカ粉が使用さilていたか%電気的絶縁性に経時変化
が生じ易く、父、At配線の腐蝕等があり必ずしも満足
すべきものとり、なっていなかった。Conventional filler materials for IC plastic packages used silica powder, but the electrical insulation properties tended to change over time, and corrosion of At wiring occurred, resulting in unsatisfactory results.
これらシリカ粉は通常結晶質シリカあるいは溶融シリカ
の粉砕粉が使用されていたが、本発明者等は上述の欠点
を生ずる原因を冗明した結果、これら原料中に含まiす
るAt20a+ Fe 2031 NazO。These silica powders are usually ground powders of crystalline silica or fused silica, but the present inventors clarified the cause of the above-mentioned drawbacks, and as a result, the At20a+ Fe2031 NazO contained in these raw materials.
K2O1UO2,Th0z の存在が無視できないこ
とが明らかとなった。そしでFe2O3の存在は霜、気
菌絶縁特性を経時的に変化させ、又、Na 20. I
(zOはAt配線のπ【蝕を促進させ易い。父、UO3
やTh02 等の放射性元素の存在6J ff −紳
ソノトエラーの原因となることが明らかとな−っだ。It became clear that the existence of K2O1UO2, Th0z cannot be ignored. Therefore, the presence of Fe2O3 changes the frost and air-bacteria insulation properties over time, and the presence of Na20. I
(zO is π of At wiring [easily promotes corrosion. Father, UO3
It is clear that the presence of radioactive elements such as 6Jff and Th02 causes sonotometry errors.
本発明はか\るシリカ粉中の% 5.g成分を排除する
ことによって、その信頼1/1゛をPiL、 <向上さ
せることができたもので /r¥匠ウワウランびトリウ
ムを実質的に含有せず、アルカリ金に五酸化物が10
PPM以下で、かつ組子鈍物含有率が1 (1(l P
PM以下のものとすることによって、すぐノまたICプ
ラスチックパッケージ用フィラー相を得たものである。% in the silica powder of the present invention 5. By eliminating the g component, we were able to improve the reliability by 1/1 of PiL.
PPM or less, and the muntin blunt content is 1 (1(l P
A filler phase for IC plastic packages was immediately obtained by controlling the content to be less than PM.
このような高純度のシリカ粉を得るl/Cは、例えば炭
素の存在の下に高純磨の結晶1円シリカ又は溶融シリカ
を2.(1(1(1〜2.5 (111℃に加?s t
、−c蒸気化し、これを空気中で捕集−することにょっ
′C更に高純度化させかつ粒径n、 I It以下の球
状のシリカ粉を得ることができる。この場合、加熱を減
圧下で行う場合には1500〜2 (l fl (1℃
程度の低温で蒸気化させることもできる。こ〕1.ら蒸
気を空気中で捕集する場合′、加熱初ル」のもの、ある
いは末期のものは5iOz以外の不純物が集中的に揮散
することが多いので本発明のものとしては適さない。The l/C to obtain such high purity silica powder is, for example, high purity polished crystalline silica or fused silica in the presence of carbon. (1(1(1~2.5(111℃+?s t
By vaporizing it and collecting it in the air, it is possible to further improve the purity and obtain spherical silica powder with a particle size of n, IIt or less. In this case, when heating is performed under reduced pressure, the temperature is 1500~2 (l fl (1℃
It can also be vaporized at low temperatures. 1. When the vapor is collected in the air, those in the early stages of heating or those in the final stage are not suitable for the present invention because impurities other than 5 iOz often volatilize intensively.
又、高純度の珪素化合物を加熱分解して化学反応により
酸化物としたものでも同様に不純物の少ないものが得ら
れる。Further, even when a high-purity silicon compound is thermally decomposed and converted into an oxide through a chemical reaction, a product containing few impurities can be similarly obtained.
以下に結晶質シリカを22 (+ (1’Cで加熱蒸発
させて得た本発明のシリカ粉と、従来の高純度結晶質シ
リカ粉および溶融シリカ粉との成分を比較して示す。The components of the silica powder of the present invention obtained by heating and evaporating crystalline silica at 22 (+ (1'C) and conventional high-purity crystalline silica powder and fused silica powder are shown below.
このような組成の差を有するシリカ粉をICプラスチッ
クパッケージ用フィラー材として使用した場合における
特性の差を比較したところ、本発明のものはアルカリ含
有量がきわめて少ないため高温、高湿下でのAt配線の
腐蝕が認められ−J”、85℃ 85% RHのバイア
ス試験で40(> (1時間以上変化が認められなかっ
た0又、VLSI用として使用した場合でもUO2およ
びTh02 を実質的に含有していないため、 VLS
I用として使用した場合でもα−線ソフトエラーは認め
られなかった。When we compared the differences in properties when silica powders with such compositional differences were used as filler materials for IC plastic packages, we found that the silica powder of the present invention has extremely low alkali content, so it is difficult to resist At Corrosion of the wiring was observed - 40 (> 40 in the bias test at 85°C and 85% RH. No change was observed for more than 1 hour. Also, even when used for VLSI, it contains substantially UO2 and Th02. VLS
Even when used for I, no α-ray soft error was observed.
これに対し従来のシリカ粉は上記のような不純物に基因
するAt配線に腐蝕が認められ、又、UO2およびTh
02 を含有するためα線ソフトエラーも認められた。On the other hand, with conventional silica powder, corrosion was observed in the At wiring due to the impurities mentioned above, and UO2 and Th
α-ray soft errors were also observed due to the presence of 02.
本発明の実施例のものにあっては、01μ以下ときわめ
て粉径が小さく、かつ球状であるため、樹脂と混合した
時に充分なるチキントロピー性があり、強力なマトリッ
クスを形成するという効果も発揮し得た。The powder of the examples of the present invention has an extremely small powder diameter of 01 μm or less and is spherical, so it has sufficient chicken tropism when mixed with resin and also exhibits the effect of forming a strong matrix. I was able to do it.
Claims (1)
酸化物がl (l PPM以下でかつ組子鈍物含有率が
1 (+ (l PPM以下のシリカからなることを特
徴とするICパッケージ用フィラー材。A filler for an IC package characterized by being substantially free of uranium and thorium, containing an alkali gold parrot oxide of 1 (l PPM or less), and having a muntin dull substance content of 1 (+ (l PPM or less) of silica) Material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15776982A JPS5947744A (en) | 1982-09-10 | 1982-09-10 | Filler material for ic package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15776982A JPS5947744A (en) | 1982-09-10 | 1982-09-10 | Filler material for ic package |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11349589A Division JPH02290030A (en) | 1989-05-02 | 1989-05-02 | Manufacture of filler material for ic package |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5947744A true JPS5947744A (en) | 1984-03-17 |
JPS6332268B2 JPS6332268B2 (en) | 1988-06-29 |
Family
ID=15656903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15776982A Granted JPS5947744A (en) | 1982-09-10 | 1982-09-10 | Filler material for ic package |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5947744A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6117416A (en) * | 1984-07-03 | 1986-01-25 | Nippon Chem Ind Co Ltd:The | High-purity silica and its preparation |
JPS6148422A (en) * | 1984-08-17 | 1986-03-10 | Nippon Chem Ind Co Ltd:The | High purity silica and its preparation |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0541383Y2 (en) * | 1988-06-24 | 1993-10-20 | ||
JPH0541384Y2 (en) * | 1988-06-24 | 1993-10-20 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5610947A (en) * | 1979-07-10 | 1981-02-03 | Toshiba Corp | Semiconductor sealing resin composition |
JPS5698845A (en) * | 1980-01-09 | 1981-08-08 | Hitachi Ltd | Semiconductor memory device |
JPS56122145A (en) * | 1980-02-29 | 1981-09-25 | Shin Etsu Chem Co Ltd | Resin composition for sealing semiconductor device |
JPS6015152A (en) * | 1983-07-06 | 1985-01-25 | 住友電気工業株式会社 | Manufacture of electric wave absorber |
-
1982
- 1982-09-10 JP JP15776982A patent/JPS5947744A/en active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5610947A (en) * | 1979-07-10 | 1981-02-03 | Toshiba Corp | Semiconductor sealing resin composition |
JPS5698845A (en) * | 1980-01-09 | 1981-08-08 | Hitachi Ltd | Semiconductor memory device |
JPS56122145A (en) * | 1980-02-29 | 1981-09-25 | Shin Etsu Chem Co Ltd | Resin composition for sealing semiconductor device |
JPS6015152A (en) * | 1983-07-06 | 1985-01-25 | 住友電気工業株式会社 | Manufacture of electric wave absorber |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6117416A (en) * | 1984-07-03 | 1986-01-25 | Nippon Chem Ind Co Ltd:The | High-purity silica and its preparation |
JPH0121093B2 (en) * | 1984-07-03 | 1989-04-19 | Nippon Chemical Ind | |
JPS6148422A (en) * | 1984-08-17 | 1986-03-10 | Nippon Chem Ind Co Ltd:The | High purity silica and its preparation |
JPH0121092B2 (en) * | 1984-08-17 | 1989-04-19 | Nippon Chemical Ind |
Also Published As
Publication number | Publication date |
---|---|
JPS6332268B2 (en) | 1988-06-29 |
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