JPH06182580A - Low alpha-ray pb alloy solder material and solder film - Google Patents

Low alpha-ray pb alloy solder material and solder film

Info

Publication number
JPH06182580A
JPH06182580A JP35419892A JP35419892A JPH06182580A JP H06182580 A JPH06182580 A JP H06182580A JP 35419892 A JP35419892 A JP 35419892A JP 35419892 A JP35419892 A JP 35419892A JP H06182580 A JPH06182580 A JP H06182580A
Authority
JP
Japan
Prior art keywords
solder
alloy
ray
solder material
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP35419892A
Other languages
Japanese (ja)
Other versions
JP3227851B2 (en
Inventor
Toshimasa Oomura
豪政 大村
Hideaki Yoshida
秀昭 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP35419892A priority Critical patent/JP3227851B2/en
Publication of JPH06182580A publication Critical patent/JPH06182580A/en
Application granted granted Critical
Publication of JP3227851B2 publication Critical patent/JP3227851B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To provide an inexpensive low alpha-ray Pb alloy solder material for a semiconductor device assembly. CONSTITUTION:The low alpha-ray Pb alloy solder material is made of a material obtained by incorporating one kind or two kinds or more of Na, Sr, K, Ga, Cr, Nb, Mn, V, Ta, Si, Zr and Ba by 10 to 5000ppm in total to a solder material constituted of a Pb alloy with compositions containing one kind or two kinds of 1-65% Sn and 1-65%, by wt., further containing one kind or two kinds of 1-15% Sb and 1-10% Ag if necessary, and the remainder Pb with inevitable impurities.

Description

【発明の詳細な説明】 【0001】 【産業上の利用分野】この発明は、IC,LSIなどの
Siチップを基板、リードフレーム、セラミックスパッ
ケージなどにダイボンディングしたり、セラミックスパ
ッケージを金属製あるいはセラミックス製リッドで封止
したりするときに使用する半導体装置組立用低α線Pb
合金はんだ材およびはんだ膜に関するものである。 【0002】 【従来の技術】従来、ICやLSIなど半導体装置の組
立には、メモリーエラーの発生を防止する目的で、表面
から放射されるα粒子のカウント数を1cm2 当り0.5
カウント/時(以下、CPHと記す)とし、Sn:1〜
65%、In:1〜65%、のうち1種または2種、さ
らに必要に応じてSb:1〜15%、Ag:1〜10
%、のうち1種または2種を含有し、残りがPbおよび
不可避不純物からなる組成(以上、重量%、以下%は重
量%を示す)を有するPb合金で構成されたはんだ材は
知られている(特開昭58−151037号公報、特公
昭62−54597号公報、特開平3−207596号
公報などを参照)。 【0003】これらα粒子のカウント数の少ないPb合
金はんだ材を製造するには、238 Uの崩壊核種である
210 Pbの少ない鉱山の鉱石を採取段階から厳選して汚
染に注意しながら精練し、真空溶解および帯域溶融法で
精製して得られた特殊なPbをPb原料として用いてい
る。 【0004】 【発明が解決しようとする課題】しかし、210 Pb含有
量の少ない鉱石の埋蔵量にも限界があり、かかる鉱山の
鉱石を探すことは年々難しくなってこの鉱石から得られ
たPbの価格も上昇し、そのため、放射性α粒子のカウ
ント数の少ないPb合金はんだを大量に安価に供給する
ことは年々難しくなっている。 【0005】そこで、通常のPb原料に含まれる210
bを遠心分離装置により5ppb 未満に減らし、この210
Pb:5ppb 未満のPb原料を用いて放射性α粒子のカ
ウント数の少ないPb合金はんだを製造することも考え
られるが、かかる方法を用いて210 Pb含有量を減らし
たPb原料は高価格になりすぎるため、民生用の電子機
器産業分野では使用することができない。 【0006】 【課題を解決するための手段】そこで、本発明者等は、
通常のPb原料を用いても放射性α粒子カウント数の少
ないPb合金はんだを得るべく研究を行った結果、通常
のPb原料を用い、これにSn:1〜65%、In:1
〜65%のうち1種または2種を添加し、さらに、必要
に応じてSb:1〜15%、Ag:1〜10%のうち1
種または2種を添加し、溶解して得られたPb合金はん
だに、さらに、Na,Sr,K,Ga,Cr,Nb,M
n,V,Ta,Si,Zr,Baのうち1種または2種
以上を合計で10〜5000ppm 含有せしめると、放射
性α粒子のカウント数は0.5CPH/cm2 以下に低下
するという研究結果が得られたのである。 【0007】この発明は、かかる研究結果にもとづいて
なされたものであって、Sn:1〜65%、In:1〜
65%、のうち1種または2種、さらに必要に応じて、
Sb:1〜15%、Ag:1〜10%、のうち1種また
は2種、を含有し、残りがPbおよび不可避不純物から
なる組成のPb合金で構成されたはんだ材に、Na,S
r,K,Ga,Cr,Nb,Mn,V,Ta,Si,Z
r,Baのうち1種または2種以上を合計で10〜50
00ppm 含有せしめてなるPb合金はんだ材に特徴を有
するものである。 【0008】この発明のPb合金はんだに含まれるN
a,Sr,K,Ga,Cr,Nb,Mn,V,Ta,S
i,ZrおよびBaのうち1種または2種以上を合計で
10〜5000ppm に限定した理由は、これら成分が1
0ppm 未満含まれていても上記放射性α粒子のカウント
数を下げるに十分な効果が得られないからであり、一
方、5000ppm を越えて含有するとはんだ付け性が低
下して好ましくないことによるものである。 【0009】さらに、この発明のPb合金はんだ材は、
蒸着膜、メッキ膜などのはんだ膜としても使用すること
ができる。 【0010】 【実施例】 実施例1 市販の高純度Pbをさらに帯域溶融法により精製して得
られた純度:99.9995%のPbをPb原料として
用意した。 【0011】一方、いずれも5ナインの純度を有するS
n,In,Sb,Agを用意し、さらに5ナインの純度
を有するNa,Sr,K,Ga,Cr,Nb,Mn,
V,Ta,Si,Zr,Ba(以下、これらの金属を
「その他金属」と総称する)を用意した。 【0012】上記Pb,Sn,In,Sb,Agおよび
その他金属をAr雰囲気中にて溶解し、表1〜表3に示
される成分組成に溶製し、鋳造してインゴットとし、こ
れを圧延して厚さ:1mmの薄板とすることにより本発明
Pb合金はんだ材(以下、本発明はんだ材という)1〜
23、比較Pb合金はんだ材(以下、比較はんだ材とい
う)1〜12および従来Pb合金はんだ材(以下、従来
はんだ材という)1〜4を作製した。 【0013】これら本発明はんだ材1〜23、比較はん
だ材1〜12および従来はんだ材1〜4が放射する2〜
10MeVのα粒子のカウント数をガスフロー型α線カ
ウンターで測定し、その測定結果をα線量として表1〜
表3に示した。 【0014】 【表1】 【0015】 【表2】【0016】 【表3】【0017】表1〜表3に示される結果から、その他金
属を含む本発明はんだ材1〜12は、その他金属を含ま
ない従来はんだ材1に比べて、α線量が格段に減少して
いることがわかる。しかし、比較はんだ材1〜12に見
られるように、その他金属の合計量が10ppm 未満含有
しても十分なα線量の減少効果が得られないこともわか
る。 【0018】実施例2 4インチSiウエハーを用意し、この4インチSiウエ
ハーの表面に、表3のPb−10%Snからなる成分組
成の従来はんだ1:100gおよびその他金属の各元
素:0.02gを同時に蒸着し、表4に示される成分組
成の本発明はんだ蒸着膜1〜12を形成した。 【0019】一方、比較のために、表3の従来はんだ
1:100gをそのまま上記4インチSiウエハー表面
に蒸着し、従来はんだ蒸着膜1を形成した。 【0020】上記本発明はんだ蒸着膜1〜12および従
来はんだ蒸着膜1のα線量を実施例1と同様にして測定
し、その測定結果を表4に示した。 【0021】 【表4】【0022】表4に示される結果から、その他金属を同
時に蒸着して得られた本発明はんだ蒸着膜1〜12は、
その他金属を含まない従来はんだ蒸着膜1に比べてα線
量が格段に減少していることがわかる。 【0023】なお、はんだ膜については蒸着はんだ膜に
ついての実施例を示したが、湿式メッキはんだ膜につい
ても同じ効果が得られた。 【0024】 【発明の効果】上述のように、この発明は、通常のPb
を原料として用いることにより低α線Pb合金はんだを
製造できるので、半導体装置組立用低α線Pb合金はん
だ材を安価に提供することができ、電子機器産業の発展
に大いに貢献しうるものである。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to die-bonding Si chips such as IC and LSI to substrates, lead frames, ceramic packages, etc., and ceramic packages made of metal or ceramics. Low α ray Pb for semiconductor device assembly used when sealing with a lid made of
The present invention relates to an alloy solder material and a solder film. 2. Description of the Related Art Conventionally, in the assembly of semiconductor devices such as ICs and LSIs, the count number of α particles emitted from the surface is 0.5 per cm 2 for the purpose of preventing a memory error.
Count / hour (hereinafter referred to as CPH), Sn: 1 to 1
65%, In: 1 to 65%, 1 or 2 types, further, if necessary, Sb: 1 to 15%, Ag: 1 to 10
%, A solder material composed of a Pb alloy having a composition containing one or two of Pb and the balance Pb and inevitable impurities (above,% by weight and below% indicates% by weight) is known. (See JP-A-58-151037, JP-B-62-54597, JP-A-3-207596, etc.). To produce a Pb alloy solder material having a small number of α particles counted, 238 U of decay nuclide is used.
Special Pb obtained by carefully selecting ore from a mine with a small amount of 210 Pb from the sampling stage, refining it while paying attention to contamination, and refining it by vacuum melting and zone melting is used as a Pb raw material. However, there is a limit to the reserves of ores having a low 210 Pb content, and it is becoming difficult to find an ore in such a mine each year, and Pb obtained from this ore is difficult to find. The price also rises, which makes it difficult to supply a large amount of Pb alloy solder with a small number of radioactive α particles counted at low cost. Therefore, 210 P contained in ordinary Pb raw materials is used.
b reduced to less than 5ppb by centrifugation device, the 210
Pb: It is possible to manufacture a Pb alloy solder with a low count of radioactive α particles by using a Pb raw material of less than 5 ppb, but a Pb raw material with a reduced 210 Pb content using such a method becomes too expensive. Therefore, it cannot be used in the field of consumer electronic devices. [0006] Therefore, the present inventors,
As a result of research to obtain a Pb alloy solder having a small radioactive α particle count number even when using a normal Pb raw material, a normal Pb raw material was used, and Sn: 1 to 65%, In: 1
1 to 2 of 60% to 65% is added, and further, if necessary, Sb: 1 to 15%, Ag: 1 to 10%
To the Pb alloy solder obtained by adding and melting one or two kinds, and further adding Na, Sr, K, Ga, Cr, Nb, M
Studies have shown that when one or more of n, V, Ta, Si, Zr, and Ba are contained in a total amount of 10 to 5000 ppm, the radioactive α particle count decreases to 0.5 CPH / cm 2 or less. It was obtained. The present invention was made based on the results of such research, and Sn: 1 to 65%, In: 1 to
65%, 1 or 2 out of 65%, and if necessary,
Sb: 1 to 15%, Ag: 1 to 10%, one or two of them, and the balance is composed of a Pb alloy having a composition of Pb and inevitable impurities.
r, K, Ga, Cr, Nb, Mn, V, Ta, Si, Z
10 to 50 in total of 1 or 2 or more of r and Ba
This is a feature of the Pb alloy solder material containing 0.00 ppm. N contained in the Pb alloy solder of the present invention
a, Sr, K, Ga, Cr, Nb, Mn, V, Ta, S
The reason why one or more of i, Zr and Ba is limited to 10 to 5000 ppm in total is that these components are 1
This is because even if the content is less than 0 ppm, sufficient effect cannot be obtained to reduce the count number of the radioactive α particles, while if the content exceeds 5000 ppm, the solderability is deteriorated, which is not preferable. . Further, the Pb alloy solder material of the present invention is
It can also be used as a solder film such as a vapor deposition film or a plating film. Example 1 Pb having a purity of 99.9995% obtained by further purifying commercially available high-purity Pb by a zone melting method was prepared as a Pb raw material. On the other hand, all S having a purity of 5 nines
n, In, Sb, Ag are prepared, and Na, Sr, K, Ga, Cr, Nb, Mn, having a purity of 5 nines are prepared.
V, Ta, Si, Zr and Ba (hereinafter, these metals are collectively referred to as "other metals") were prepared. The above Pb, Sn, In, Sb, Ag and other metals are melted in an Ar atmosphere, melted to the composition shown in Tables 1 to 3 and cast into an ingot, which is then rolled. And a thickness of 1 mm, the Pb alloy solder material of the present invention (hereinafter referred to as the solder material of the present invention) 1 to
23, comparative Pb alloy solder materials (hereinafter referred to as comparative solder materials) 1 to 12 and conventional Pb alloy solder materials (hereinafter referred to as conventional solder materials) 1 to 4 were produced. The solder materials 1 to 23 of the present invention, the comparative solder materials 1 to 12 and the conventional solder materials 1 to 4 radiate 2 to
The count number of α particles of 10 MeV was measured by a gas flow type α ray counter, and the measurement result was used as α dose.
The results are shown in Table 3. [Table 1] [Table 2] [Table 3] From the results shown in Tables 1 to 3, the solder materials 1 to 12 of the present invention containing other metals have a significantly reduced α dose as compared with the conventional solder material 1 containing no other metals. I understand. However, as can be seen from the comparative solder materials 1 to 12, it can be seen that even if the total amount of other metals is less than 10 ppm, a sufficient α dose reduction effect cannot be obtained. Example 2 A 4-inch Si wafer was prepared, and on the surface of the 4-inch Si wafer, 1: 100 g of the conventional solder having the composition of Pb-10% Sn shown in Table 3 and each element of other metals: 0. 02 g was vapor-deposited at the same time to form solder vapor deposition films 1 to 12 of the present invention having the composition shown in Table 4. On the other hand, for comparison, the conventional solder of 1: 100 g in Table 3 was directly deposited on the surface of the 4-inch Si wafer to form the conventional solder deposition film 1. The α doses of the above-described solder vapor deposition films 1 to 12 of the present invention and the conventional solder vapor deposition film 1 were measured in the same manner as in Example 1, and the measurement results are shown in Table 4. [Table 4] From the results shown in Table 4, the solder vapor deposition films 1 to 12 of the present invention obtained by vapor deposition of other metals at the same time,
It can be seen that the α dose is remarkably reduced as compared with the conventional solder deposition film 1 containing no other metal. As for the solder film, the example of the vapor-deposited solder film was shown, but the same effect was obtained for the wet-plated solder film. As described above, according to the present invention, ordinary Pb is used.
Since a low α-ray Pb alloy solder can be produced by using as a raw material, a low α-ray Pb alloy solder material for semiconductor device assembly can be provided at low cost, which can greatly contribute to the development of the electronic device industry. .

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 23/50 E 9272−4M ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H01L 23/50 E 9272-4M

Claims (1)

【特許請求の範囲】 【請求項1 重量%で、 Sn:1〜65%、In:1〜65%、のうち1種また
は2種、さらに必要に応じて、 Sb:1〜15%、Ag:1〜10%、のうち1種また
は2種、を含有し、さらに、 Na,Sr,K,Ga,Cr,Nb,Mn,V,Ta,
Si,Zr,Baのうち1種または2種以上を合計で1
0〜5000ppm 含有し、残りがPbおよび不可避不純
物からなる組成を有することを特徴とする低α線Pb合
金はんだ材。 【請求項2】 請求項1記載の成分組成を有する低α線
Pb合金はんだ材で構成されることを特徴とするはんだ
膜。
Claims: 1% by weight of Sn: 1 to 65%, In: 1 to 65%, and if necessary, Sb: 1 to 15%, Ag 1-10% of 1 type or 2 types, and further contains Na, Sr, K, Ga, Cr, Nb, Mn, V, Ta,
1 or 2 or more of Si, Zr and Ba in total 1
A low α-ray Pb alloy solder material having a composition of 0 to 5000 ppm and the balance of Pb and inevitable impurities. 2. A solder film comprising a low α ray Pb alloy solder material having the component composition according to claim 1.
JP35419892A 1992-12-15 1992-12-15 Low α ray Pb alloy solder material and solder film Expired - Lifetime JP3227851B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP35419892A JP3227851B2 (en) 1992-12-15 1992-12-15 Low α ray Pb alloy solder material and solder film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35419892A JP3227851B2 (en) 1992-12-15 1992-12-15 Low α ray Pb alloy solder material and solder film

Publications (2)

Publication Number Publication Date
JPH06182580A true JPH06182580A (en) 1994-07-05
JP3227851B2 JP3227851B2 (en) 2001-11-12

Family

ID=18435948

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3227851B2 (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09115957A (en) * 1995-10-18 1997-05-02 Sanken Electric Co Ltd Electronic component and manufacture of electronic circuit device using electronic component
AT411116B (en) * 1999-10-05 2003-09-25 Siemens Ag Oesterreich Cooling can for liquid cooling of electrical components
JP2007504005A (en) * 2003-08-29 2007-03-01 ピーピージー・インダストリーズ・オハイオ・インコーポレイテッド Soldering method and solder composition
JP2007302496A (en) * 2006-05-10 2007-11-22 Nikko Kinzoku Kk High purity stannous oxide, powder of the same, and method for producing the stannous oxide
JP2011214061A (en) * 2010-03-31 2011-10-27 Jx Nippon Mining & Metals Corp INDIUM OR INDIUM-CONTAINING ALLOY WITH REDUCED QUANTITY OF α RAY
CN102476250A (en) * 2010-11-25 2012-05-30 中国科学院金属研究所 Corrosion-resistant Sn-Pb soldering material
CN102728965A (en) * 2012-07-04 2012-10-17 深圳市亿铖达工业有限公司 High strength LED solder
CN103737194A (en) * 2013-12-23 2014-04-23 苏州宏泉高压电容器有限公司 Welding material and manufacturing method thereof
US9340850B2 (en) 2005-07-01 2016-05-17 Jx Nippon Mining & Metals Corporation Process for producing high-purity tin
US9394590B2 (en) 2010-03-16 2016-07-19 Jx Nippon Mining & Metals Corporation Low α-dose tin or tin alloy, and method for producing same
US9597754B2 (en) 2011-03-07 2017-03-21 Jx Nippon Mining & Metals Corporation Copper or copper alloy, bonding wire, method of producing the copper, method of producing the copper alloy, and method of producing the bonding wire
US9666547B2 (en) 2002-10-08 2017-05-30 Honeywell International Inc. Method of refining solder materials
CN106825983A (en) * 2017-03-10 2017-06-13 南京达迈科技实业有限公司 A kind of SnAgSbNi series lead-free soldering tins alloy and its preparation method and application
US10711358B2 (en) 2014-02-20 2020-07-14 Jx Nippon Mining & Metals Corporation Method of producing low alpha-ray emitting bismuth, and low alpha-ray emitting bismuth

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09115957A (en) * 1995-10-18 1997-05-02 Sanken Electric Co Ltd Electronic component and manufacture of electronic circuit device using electronic component
AT411116B (en) * 1999-10-05 2003-09-25 Siemens Ag Oesterreich Cooling can for liquid cooling of electrical components
US9666547B2 (en) 2002-10-08 2017-05-30 Honeywell International Inc. Method of refining solder materials
JP2007504005A (en) * 2003-08-29 2007-03-01 ピーピージー・インダストリーズ・オハイオ・インコーポレイテッド Soldering method and solder composition
US9340850B2 (en) 2005-07-01 2016-05-17 Jx Nippon Mining & Metals Corporation Process for producing high-purity tin
JP2007302496A (en) * 2006-05-10 2007-11-22 Nikko Kinzoku Kk High purity stannous oxide, powder of the same, and method for producing the stannous oxide
US9394590B2 (en) 2010-03-16 2016-07-19 Jx Nippon Mining & Metals Corporation Low α-dose tin or tin alloy, and method for producing same
JP2011214061A (en) * 2010-03-31 2011-10-27 Jx Nippon Mining & Metals Corp INDIUM OR INDIUM-CONTAINING ALLOY WITH REDUCED QUANTITY OF α RAY
CN102476250A (en) * 2010-11-25 2012-05-30 中国科学院金属研究所 Corrosion-resistant Sn-Pb soldering material
US9597754B2 (en) 2011-03-07 2017-03-21 Jx Nippon Mining & Metals Corporation Copper or copper alloy, bonding wire, method of producing the copper, method of producing the copper alloy, and method of producing the bonding wire
CN102728965A (en) * 2012-07-04 2012-10-17 深圳市亿铖达工业有限公司 High strength LED solder
CN103737194A (en) * 2013-12-23 2014-04-23 苏州宏泉高压电容器有限公司 Welding material and manufacturing method thereof
US10711358B2 (en) 2014-02-20 2020-07-14 Jx Nippon Mining & Metals Corporation Method of producing low alpha-ray emitting bismuth, and low alpha-ray emitting bismuth
CN106825983A (en) * 2017-03-10 2017-06-13 南京达迈科技实业有限公司 A kind of SnAgSbNi series lead-free soldering tins alloy and its preparation method and application
CN106825983B (en) * 2017-03-10 2020-05-05 南京达迈科技实业有限公司 SnAgSbNi series lead-free soldering tin alloy and preparation method and application thereof

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Publication number Publication date
JP3227851B2 (en) 2001-11-12

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