JP2778171B2 - Pb alloy solder for semiconductor device assembly - Google Patents
Pb alloy solder for semiconductor device assemblyInfo
- Publication number
- JP2778171B2 JP2778171B2 JP2003113A JP311390A JP2778171B2 JP 2778171 B2 JP2778171 B2 JP 2778171B2 JP 2003113 A JP2003113 A JP 2003113A JP 311390 A JP311390 A JP 311390A JP 2778171 B2 JP2778171 B2 JP 2778171B2
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- solder material
- alloy solder
- semiconductor device
- radioactive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、被はんだ付け材とのぬれ性にすぐれ、こ
の結果としてはんだ使用量の低減を可能とする半導体装
置組み立て用Pb合金はんだ材に関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Pb alloy solder material for assembling semiconductor devices, which has excellent wettability with a material to be soldered, and as a result, enables a reduction in the amount of solder used. Things.
通常、ICやLSIなどの半導体装置の組み立てに、メモ
リーエラーの発生を防止する目的で、特開昭58−151037
号公報や特開昭62−54597号公報などに記載される、放
射性同位元素の含有量を50ppb未満（1ppbは10億分の
１）にして、放射性α粒子のカウント数を0.5CPH（カウ
ント／時）/cm2以下とし、かつ合金成分として、 Sn:1〜65％,In:1〜65％、 のうちの１種または２種、さらに必要に応じて、 Sb:1〜15％,Ag:1〜10％， のうちの１種または２種、 を含有し、残りがPbと不可避不純物からなる代表組成
（以上重量％、以下％は重量％を示す）を有するPb合金
で構成されたはんだ材が用いられている。Normally, in order to prevent the occurrence of memory errors in the assembly of semiconductor devices such as ICs and LSIs, Japanese Patent Application Laid-Open No.
The radioactive isotope content is set to less than 50 ppb (1 ppb is one billionth) and the count of radioactive α particles is set to 0.5 CPH (count / Hour) / cm 2 or less, and one or two of Sn: 1 to 65% and In: 1 to 65% as alloy components, and, if necessary, Sb: 1 to 15%, Ag : 1 to 10%, one or two of the following, and the remainder is composed of a Pb alloy having a typical composition of Pb and unavoidable impurities (more than% by weight, below% indicates% by weight) Solder material is used.
しかし、近年の半導体装置の高集積化に伴ない、はん
だ材の使用量も増加する傾向にあり、軽量化のためにも
はんだ材使用量の低減化が大きな課題となっているが、
はんだ材の低減には、はんだ材自体の被はんだ付け部材
とのぬれ性向上をはかり、少量のはんだ材で大きなはん
だ付け面積を確保するようにしなければならず、一方上
記の各種従来Pb合金はんだ材は、被はんだ付け部材との
ぬれ性が十分でなく、所望の接合強度を得るために、か
なりの量のはんだ材の使用を避けることができないのが
現状である。However, with the recent increase in the degree of integration of semiconductor devices, the amount of solder material used has also tended to increase, and reducing the amount of solder material used for weight reduction has become a major issue.
In order to reduce the amount of solder material, it is necessary to improve the wettability of the solder material itself with the material to be soldered, and to secure a large soldering area with a small amount of solder material. At present, the material does not have sufficient wettability with the member to be soldered, and the use of a considerable amount of solder material cannot be avoided in order to obtain a desired bonding strength.
そこで、本発明者等は、上述のような観点から、半導
体装置の組み立てに用いられている上記の従来Pb合金の
はんだ材に着目し、これの被はんだ付け部材とのぬれ性
向上をはかるべく研究を行なった結果、 （イ）上記の従来Pb合金はんだ材における放射性同位
元素の含有量をさらに一段と低減せしめて5ppb未満と
し、放射性α粒子のカウント数が0.09CPH/cm2以下とな
るようにした状態で、全体に占める割合で、 Ca,MgおよびBeのうちの１種または２種以上:20〜5000
ppm、 を含有させると、被はんだ付け部材とのぬれ性が向上
し、この結果上記従来Pb合金はんだ材と同じはんだ付け
面積、すなわち同じ接合強度を得るのに必要なはんだ使
用量を著しく低減することが可能になり、その分だけ軽
量化がはかれるようになる。In view of the above, the present inventors have focused on the above-mentioned conventional Pb alloy solder material used for assembling a semiconductor device from the above-described viewpoint, and aimed to improve the wettability with the member to be soldered. As a result of the research, (a) the content of radioisotopes in the conventional Pb alloy solder material described above was further reduced to less than 5 ppb, and the count of radioactive α particles was reduced to 0.09 CPH / cm 2 or less. In a state where it is performed, in proportion to the whole, one or more of Ca, Mg and Be: 20 to 5000
ppm, the wettability with the member to be soldered is improved, and as a result, the same soldering area as the above-mentioned conventional Pb alloy solder material, that is, the amount of solder required to obtain the same bonding strength is significantly reduced. Is possible, and the weight is reduced accordingly.
（ロ）上記従来Pb合金はんだ材の１つとして、 Sn:1〜65％,In:1〜65％、 のうちの１種または２種、さらに必要に応じて、 Sb:1〜15％,Ag:1〜10％， のうちの１種または２種、 を含有し、残りがPbと不可避不純物からなる代表組成を
有するPb合金で構成されたはんだ材を使用することがで
きる、 という研究結果を得たのである。(B) As one of the conventional Pb alloy solder materials, one or two of Sn: 1 to 65%, In: 1 to 65%, and, if necessary, Sb: 1 to 15%, Ag: 1 to 10%, one or two of which can be used, and the remainder can use a solder material composed of a Pb alloy having a typical composition of Pb and unavoidable impurities. I got it.
この発明は、上記研究結果にもとづいてなされたもの
であって、 （１）放射性同位元素の含有量が5ppb未満にして、放
射性α粒子のカウント数が0.09CPH/cm2以下のPb合金は
んだ材に、全体に占める割合で、 Ca,MgおよびBeのうちの１種または２種以上:20〜5000
ppm、 を含有せしめてなる半導体装置組み立て用Pb合金はんだ
材、 （２）前記（１）のPb合金はんだ材は、 放射性同位元素の含有量:5ppb未満にして、放射性α
粒子のカウント数が0.09CPH/cm2以下を示し、かつ合金
成分として、 Sn:1〜65％,In:1〜65％、 のうちの１種または２種、さらに必要に応じて、 Sb:1〜15％,Ag:1〜10％， のうちの１種または２種、 を含有し、残りがPbと不可避不純物からなる代表組成を
有するPb合金で構成されているはんだ材である半導体装
置組み立て用Pb合金はんだ材、 に特徴を有するものである。The present invention has been made based on the above research results. (1) Pb alloy solder material having a radioisotope content of less than 5 ppb and a radioactive α particle count of 0.09 CPH / cm 2 or less And one or more of Ca, Mg and Be: 20 to 5000
(2) The Pb alloy solder material for assembling a semiconductor device described in (1) above, wherein the content of the radioisotope is less than 5 ppb and the radioactive α
The particle count is 0.09 CPH / cm 2 or less, and one or two of Sn: 1 to 65% and In: 1 to 65% as an alloy component, and Sb: 1 to 15%, Ag: 1 to 10%, one or two of the following, and the remainder is a solder material composed of a Pb alloy having a typical composition of Pb and unavoidable impurities. Pb alloy solder material for assembly.
なお、この発明のPb合金はんだ材において、ぬれ性向
上成分の含有量を20〜5000ppmに限定したのは、その含
有量が20ppm未満では所望のぬれ性向上効果が得られ
ず、一方その含有量が5000ppmを越えても、はんだ材自
体が酸化し易くなり、ぬれ性に低下傾向が現れるように
なるという理由によるものであり、また放射性同位元素
の含有量を5ppb未満にして、放射性α粒子のカウント数
が0.09CPH/cm2以下になるようにしたのは、はんだ材中
に微量存在する210Pbは、 210Pb→（β崩壊）→210B7→（β崩壊）→210Po→
（α崩壊）→204Pb,の過程で204Poが204Pbに変換する
が、この際210Pbに変換する時のα崩壊がメモリーエラ
ー発生の原因となっており、したがって放射性同位元素
の含有量が5ppb以上になると前記α崩壊が原因の経時的
メモリーエラー（所定時間経過後に発生するメモリーエ
ラー）の発生を避けることができないが、その含有量を
5ppb未満にして、放射性α粒子のカウント数を0.09CPH/
cm2以下にすると、このような経時的メモリーエラーの
発生が皆無となるという理由にもとづくものである。In addition, in the Pb alloy solder material of the present invention, the content of the wettability improving component is limited to 20 to 5000 ppm, if the content is less than 20 ppm, the desired wettability improving effect is not obtained, while the content is Exceeds 5000 ppm, the solder material itself is liable to oxidize and the wettability tends to decrease, and the content of radioisotopes is less than 5 ppb, the count was set to be below 0.09CPH / cm 2 is, 210 Pb present trace amounts in the solder material, 210 Pb → (β decay) → 210 B 7 → (β decay) → 210 Po →
In the process of (α decay) → 204 Pb, 204 Po is converted to 204 Pb. At this time, α decay when converting to 210 Pb causes a memory error, and therefore the content of radioisotope Is 5 ppb or more, the occurrence of a memory error over time due to the α decay (a memory error that occurs after a predetermined time has elapsed) cannot be avoided.
Less than 5 ppb, the count of radioactive α particles is 0.09 CPH /
This is based on the reason that if the size is less than cm 2 , such a memory error with time will not occur at all.
つぎに、この発明のPb合金はんだ材を実施例により具
体的に説明する。Next, the Pb alloy solder material of the present invention will be specifically described with reference to examples.
原料として、いずれも通常の条件での真空溶解法およ
び帯域溶融法で精製した、放射性同位元素の含有量が１
〜4ppbにして、放射性α粒子のカウント数:0.01〜0.07C
PH/cm2を示し、かつ純度が99.9995％のPb、同99.99％の
Ag,Sb,Sn、およびIn、さらに99.0％のCa,MgおよびBeを
用意し、これら原料を用い、通常の溶解法にてAr雰囲気
溶解を行なってそれぞれ第１表に示される成分組成に溶
製し、鋳造してインゴットとし、これを圧延にてそれぞ
れ0.05mm厚の箔材および0.15mm厚の薄板材とすることに
より本発明Pb合金はんだ材１〜７をそれぞれ製造した。As a raw material, the content of the radioisotope was 1 which was purified by vacuum melting method and zone melting method under normal conditions.
Up to 4 ppb, count number of radioactive α particles: 0.01 to 0.07 C
Shows PH / cm 2 and purity 99.9995% Pb, 99.99%
Ag, Sb, Sn, and In, and 99.0% of Ca, Mg, and Be were prepared, and these materials were dissolved in an Ar atmosphere by a normal dissolution method to dissolve each of the component compositions shown in Table 1. The Pb alloy solder materials 1 to 7 of the present invention were manufactured by forming and casting an ingot, and rolling it into a 0.05 mm-thick foil material and 0.15 mm-thick thin sheet material, respectively.
また、比較の目的で、原料として、放射性同位元素の
含有量が10〜42ppbの範囲内にあり、放射性α粒子のカ
ウント数が0.10〜0.45CPH/cm2を示し、かつ純度が99.99
3％のPb、99.98％のAg、99.8％のSb,Sn、およびInを用
いる以外は同一の条件で、従来Pb合金はんだ材１〜18を
それぞれ製造した。For the purpose of comparison, as a raw material is in the range content is 10~42ppb radioisotope, count of radioactive α particles indicates 0.10~0.45CPH / cm 2, and the purity 99.99
Conventional Pb alloy solder materials 1 to 18 were produced under the same conditions except that 3% of Pb, 99.98% of Ag, 99.8% of Sb, Sn, and In were used.
ついで、この結果得られた各種のPb合金はんだ材か
ら、半導体装置を構成するセラミックケースに封着板を
はんだ付けする際に用いられる縦:15mm×横:10mm×幅:1
mm×厚さ:0.05mmの寸法をもった窓枠状はんだ材を打抜
き、これの放射性α粒子のカウント数を測定すると共
に、これを半導体装置の組み立てにおける封着板はんだ
付けに用い、組み立て後の半導体装置の１年間の運転期
間内におけるメモラーエラーの発生回数を測定した。Next, from various Pb alloy solder materials obtained as a result, used when soldering a sealing plate to a ceramic case constituting a semiconductor device: vertical: 15 mm × horizontal: 10 mm × width: 1
mm × thickness: punch out a window frame-shaped solder material with dimensions of 0.05 mm, measure the count of radioactive α particles, use this for soldering the sealing plate in the assembly of semiconductor devices, and after assembly The number of occurrences of memory errors during the one-year operation period of the semiconductor device was measured.
また、ぬれ性を評価する目的で、上記各種Pb合金はん
だ材から、縦:5mm×横:1mm×厚さ:0.15mmの寸法をもっ
た試験片を切り出し、これを、半導体装置のリードフレ
ームとして用いられている表面にAgを無電解メッキした
Fe−42％Ni合金製板材の上に置き、さらにその上に縦:1
0mm×横:10mm×厚さ:0.5mmの寸法をもち、表面に厚さ:
0.5μｍ程度のAuを蒸着メッキしたSiチップを前記メッ
キ面がお互いに対向した形で重ね合わせ、N2＋30容量％
H2の還元性雰囲気中、温度:370℃に加熱することにより
はんだ付けを行ない、はんだ付け面のはんだ拡がり面積
（はんだ付け面積）を測定し、Siチップ接合面全体に対
する割合を算出した。これらの結果を第１表に示した。In addition, for the purpose of evaluating the wettability, a test piece having a size of 5 mm (length) × 1 mm (width) × 1 mm (thickness): 0.15 mm was cut out from the above various Pb alloy solders, and this was used as a lead frame of a semiconductor device. Electroless plating of Ag on the surface used
Place it on a Fe-42% Ni alloy plate, and further vertically on it: 1
It has dimensions of 0mm x width: 10mm x thickness: 0.5mm, thickness on the surface:
Si chips with Au plating of about 0.5μm deposited on top of each other with the plated surfaces facing each other, N 2 + 30% by volume
Soldering was performed by heating to a temperature of 370 ° C. in a reducing atmosphere of H 2 , the solder spread area (soldering area) of the soldering surface was measured, and the ratio to the entire Si chip bonding surface was calculated. The results are shown in Table 1.
〔発明の効果〕 第１表に示される結果から明らかなように、本発明Pb
合金はんだ材１〜７においては、いずれも放射性同位元
素の含有量が約10〜40ppb、放射性α粒子のカウント数
が約0.1〜0.4CPH/cm2の従来Pb合金はんだ材１〜18に比
して、放射性同位元素の含有量および放射性α粒子のカ
ウント数とも約１〜4.5ppbおよび0.01〜0.07CPH/cm2と
きわめて低く、この結果メモリーエラーの発生もなく、
かつぬれ性にすぐれ、はんだ材がはんだ付け面全体に亘
って拡がって強固な接合強度が得られるのに対して、従
来Pb合金はんだ材１〜18では、僅かながらメモリーエラ
ーの発生があり、かつぬれ性が十分でないために、はん
だの拡がりが不十分で、所定の接合強度を得るために
は、より多量のはんだ材の使用が不可欠であることを示
している。 [Effects of the Invention] As is clear from the results shown in Table 1, the Pb of the present invention
Each of the alloy solders 1 to 7 has a radioactive isotope content of about 10 to 40 ppb and a radioactive α particle count of about 0.1 to 0.4 CPH / cm 2 as compared with the conventional Pb alloy solders 1 to 18. Te, radioisotope content and radioactive α and count both about 1~4.5ppb and 0.01~0.07CPH / cm 2 of particles very low, and no occurrence of this result memory errors,
And while excellent wettability, the solder material spreads over the entire soldering surface to obtain a strong bonding strength, whereas the conventional Pb alloy solder materials 1 to 18 have a slight memory error, and Since the wettability is not sufficient, the spread of the solder is insufficient, which indicates that the use of a larger amount of solder material is indispensable to obtain a predetermined bonding strength.
上述のように、この発明のPb合金はんだ材は、被はん
だ付け部材とのぬれ性にすぐれているので、はんだ付け
面全体に亘ってよく拡がり、この結果少量のはんだ材で
所定の接合強度を得ることが可能となり、半導体装置の
軽量化に寄与するばかりでなく、放射性同位元素の含有
量をきわめて少なくして、放射性α粒子のカウント数を
著しく抑制し、これによって特に経時的メモリーエラー
の発生を防止しているなど工業上有用な特性を有するも
のである。As described above, the Pb alloy solder material of the present invention is excellent in wettability with a member to be soldered, so that it spreads well over the entire surface to be soldered, and as a result, a predetermined bonding strength can be obtained with a small amount of solder material. Not only contributes to the weight reduction of the semiconductor device, but also significantly reduces the content of radioisotopes and significantly suppresses the count number of radioactive α particles, thereby causing a memory error particularly with time. And has industrially useful properties such as preventing
───────────────────────────────────────────────────── フロントページの続き (72)発明者 大村 豪政 埼玉県大宮市北袋町１―297 三菱金属 株式会社中央研究所内 (56)参考文献 特開 昭59−125635（ＪＰ，Ａ) 特開 平１−321094（ＪＰ，Ａ) 特開 昭63−123594（ＪＰ，Ａ) 特公 昭62−54598（ＪＰ，Ｂ２) 特公 昭57−44439（ＪＰ，Ｂ２) (58)調査した分野(Int.Cl.6，ＤＢ名) B23K 35/26──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Takemasa Omura 1-297 Kitabukuro-cho, Omiya-shi, Saitama Mitsubishi Metals Central Research Laboratory (56) References JP-A-59-125635 (JP, A) 1-321094 (JP, A) JP-A-63-123594 (JP, A) JP-B-62-54598 (JP, B2) JP-B-57-44439 (JP, B2) (58) Fields investigated (Int. Cl. 6 , DB name) B23K 35/26
Claims (1)
て、放射性α粒子のカウント数が0.09CPH/cm2以下のPb
合金はんだ材に、全体に占める割合で、 Ca,MgおよびBeのうちの１種または２種以上:20〜5000pp
mを含有せしめてなる半導体装置組み立て用Pb合金はん
だ材。(1) Pb having a radioisotope content of less than 5 ppb and a radioactive α particle count of 0.09 CPH / cm 2 or less.
One or more of Ca, Mg, and Be in alloy solder material in proportion to the total: 20-5000pp
Pb alloy solder for assembling semiconductor devices containing m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003113A JP2778171B2 (en) | 1990-01-10 | 1990-01-10 | Pb alloy solder for semiconductor device assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003113A JP2778171B2 (en) | 1990-01-10 | 1990-01-10 | Pb alloy solder for semiconductor device assembly |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03207596A JPH03207596A (en) | 1991-09-10 |
| JP2778171B2 true JP2778171B2 (en) | 1998-07-23 |
Family
ID=11548295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003113A Expired - Lifetime JP2778171B2 (en) | 1990-01-10 | 1990-01-10 | Pb alloy solder for semiconductor device assembly |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2778171B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100092335A1 (en) * | 2006-12-29 | 2010-04-15 | Iljin Copper Foil Co., Ltd. | Pb-free solder alloy |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5744439A (en) * | 1980-09-01 | 1982-03-12 | Musashi Seimitsu Kogyo Kk | Dowel positioning method for cold forging |
| JPS59125635A (en) * | 1983-01-05 | 1984-07-20 | Mitsubishi Metal Corp | Semiconductor device |
| JPS6254598A (en) * | 1985-09-02 | 1987-03-10 | Okamoto Kogyo Kk | Supporting device for angle pipe or the like in tentative assembly for butt welding of piping |
| JPS63123594A (en) * | 1986-11-12 | 1988-05-27 | Toshiba Corp | Alloy for low temperature joining |
| JPH01321094A (en) * | 1988-06-24 | 1989-12-27 | Mitsubishi Metal Corp | High-purity pb material used for production of pb alloy brazing filler metal for assembling semiconductor |
-
1990
- 1990-01-10 JP JP2003113A patent/JP2778171B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03207596A (en) | 1991-09-10 |
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