JPS61222142A - High-purity pb material used for manufacturing pb alloy solder material - Google Patents
High-purity pb material used for manufacturing pb alloy solder materialInfo
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- JPS61222142A JPS61222142A JP6298085A JP6298085A JPS61222142A JP S61222142 A JPS61222142 A JP S61222142A JP 6298085 A JP6298085 A JP 6298085A JP 6298085 A JP6298085 A JP 6298085A JP S61222142 A JPS61222142 A JP S61222142A
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- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、ＩＣは勿論のこと、大容量メモリー素子で
ある６４ＫＲＡＭや２５６ＫＲＡＭなどのメモリー、さ
らに高い信頼性が要求される各種のＬＳＩや超ＬＳＩな
どの半導体装置の組立てに際して、装置部材の接合にろ
う材として使用することができるｐｂろう材を製造する
のに用いられる高純度ｐｂ材に関するものである。[Detailed Description of the Invention] [Industrial Application Field] This invention is applicable not only to ICs, but also to large-capacity memory devices such as 64KRAM and 256KRAM, as well as various LSIs and superstructures that require high reliability. The present invention relates to a high-purity PB material used to produce a PB brazing material that can be used as a brazing material to join device members when assembling semiconductor devices such as LSIs.
一般に、半導体装置の１つとして、１４１図に概略縦断
面図で示されるＩＣセラミック・ノ５ツケージが知られ
ている。Generally, as one type of semiconductor device, an IC ceramic cage shown in a schematic vertical cross-sectional view in FIG. 141 is known.
このＩＣセラミック・パッケージは、主として所定のキ
ャビティをもったセラミツフケニス１と。This IC ceramic package mainly consists of a ceramic ceramic package 1 with a predetermined cavity.
このキャビティの底部にろう付けされたシリコンチップ
などの半導体素子２と、ＡｕあるいはＡｎの極細線から
なるボンディングワイヤ３と、セラミックケース１の上
面にろう付けされた封着板４と。A semiconductor element 2 such as a silicon chip is brazed to the bottom of this cavity, a bonding wire 3 made of ultrafine Au or An wire, and a sealing plate 4 brazed to the top surface of the ceramic case 1.
セラミックケース１にろう付けされたリード材５で構成
されている。It consists of a lead material 5 brazed to a ceramic case 1.
このようにＩＣセラミック・パッケージにおいては、半
導体素子のセラミックケースのキャビティ底部へのろう
付け、並びに封着板のセラミックケース上面へのろう付
けに、さらに別の構造を有するＩＣプラスチック・パッ
ケージにおいては、半導体素子のリードフレームへのろ
う付けに、各種のろう材が使用されているが、近年、高
価なＡｕ合金ろう材に代って、安価なｐｂ金合金う材、
すなわち、Ａｇ：ｌ５１０％、Ｓｂ：１〜１５％、Ｓｎ
：１〜６５％。In this way, in the IC ceramic package, the semiconductor element is brazed to the bottom of the cavity of the ceramic case, and the sealing plate is brazed to the top surface of the ceramic case, and in the IC plastic package, which has a different structure, Various types of brazing filler metals are used for brazing semiconductor elements to lead frames, but in recent years, inexpensive PB gold alloy filler fillers have replaced expensive Au alloy fillers.
That is, Ag: l510%, Sb: 1-15%, Sn
:1~65%.
およびＩｎ ： １へ６５％のうちの１種以上を含有し
、残りがｐｂと不可避不純物からなる組成Ｃ以上重量％
）を有するｐｂ金合金う材が注目されている。and In: 1 to 65%, with the remainder consisting of PB and unavoidable impurities Composition C or more weight%
) is attracting attention.
しかし、上記の従来ｐｂ金合金う材の製造に原料として
用いられている高純度ｐｂ材は。However, the high-purity PB material used as a raw material for manufacturing the conventional PB gold alloy filling material mentioned above.
純度：９９．９９９％以上。Purity: 99.999% or more.
ＵやＴｈなどの放射イ生同位元素の含有量：１０〜５０
ｐ ｐ ｂ。Content of radioactive isotopes such as U and Th: 10-50
p p b.
放射性α粒子のカウント数：０．１〜０．５ ＣＰＨ／
ｄ、の性質をもつものであるため、この従来高純度ｐｂ
材を用いて製造されたｐｂ金合金う材を使用して組立て
られた半導体装置においては、しばしばメモリーエラー
が発生し、信頼性のないものであった。Count number of radioactive α particles: 0.1 to 0.5 CPH/
d, this conventionally high-purity PB
Memory errors often occur in semiconductor devices assembled using a PB gold alloy material, making them unreliable.
そこで１本発明者等は、上述のような観点から、半導体
装置の組立てにろう材として用いた場合にメモリーエラ
ーの発生のないｐｂ金合金う材を得べく、特にこれの原
料となる高純度ｐｂ材について研究を行なった結果、
上記の従来高純度ｐｂ材を、真空蒸留容器内で、１Ｏ−
３ｔｏｒｙ以上の高真空中で９００℃以上の温度に加熱
して蒸留精製してやると、この結果得られた高純度ｐｂ
材は。Therefore, from the above-mentioned viewpoint, the present inventors aimed to obtain a Pb gold alloy filler material that does not cause memory errors when used as a brazing filler metal in the assembly of semiconductor devices, in particular, using a high-purity material as a raw material for the filler material. As a result of research on PB materials, we found that the above-mentioned conventional high-purity PB materials were reduced to 1O-
When purified by distillation by heating to a temperature of 900°C or higher in a high vacuum of 3 tories or higher, the resulting high-purity PB
The material is.
純度：９９．９９９９６以上。Purity: 99.99996 or higher.
放射性同位元素の含有量：５ｐｐｂ未満。Radioactive isotope content: less than 5 ppb.
放射性α粒子のカウント数： ０．０９ＣＰＨ／ｉ以下
。Count number of radioactive α particles: 0.09 CPH/i or less.
の条件を満足するようになり、したがって、これを原料
として使用して製造されたｐｂ金合金う材を用いて組立
てられた半導体装置においては、メモリーエラーの発生
が全くなく、信頼性の高いものとなるという知見を得た
のである。Therefore, semiconductor devices assembled using PB gold alloy material manufactured using this material as a raw material have no memory errors and are highly reliable. We obtained the knowledge that.
この発明は、上記知見にもとづいてなされたものであっ
て、半導体装置の組立てに用いられるｐｂ金合金う材を
製造するのに、原料として用いられる高純度ｐｂ材が、
”
純度：９９．９９９％以上、
放射性同位元素の含有量：５ｐｐｂ未満ｐ放射性α粒子
のカウント数： ０．０９ＣＰＨ／−以下。This invention was made based on the above knowledge, and it is found that the high-purity PB material used as a raw material for manufacturing the PB gold alloy filling material used in the assembly of semiconductor devices is
” Purity: 99.999% or more, Radioactive isotope content: Less than 5 ppb, Count number of radioactive α particles: 0.09 CPH/- or less.
の性質をもつことに特徴を有するものである。It is characterized by having the following properties.
なお、この発明の高純度ｐｂ材に関して、半導体装置に
ｐｂ金合金う材が原因のメモリーエラーを発生させない
ようにするためには、その原料である烏純度ｐｂ材の純
度を９９．９９９％以上にして、放射性同位元素の含有
量を５ｐｐｂ未満とし、もって放射性α粒子のカウント
数を０．０９０ＰＨ／ｄ以下とする必要があるのであっ
て、これらの性質は、上記の条件での真空蒸留精製処理
によってはじめて具備せしめることができるようになる
のである。Regarding the high-purity PB material of this invention, in order to prevent memory errors caused by the PB gold alloy filler material from occurring in semiconductor devices, the purity of the raw material PB material must be 99.999% or higher. The content of radioactive isotopes must be less than 5 ppb, and the count number of radioactive α particles must be 0.090 PH/d or less. It can only be achieved through processing.
つぎに、この発明の扁純度ｐｂ材を実施例により具体的
に説明する。Next, the high purity PB material of the present invention will be specifically explained using Examples.
それぞれ第１表に示される性質をもった高純度ｐｂ材を
用意し、この高純度ｐｂ材を真空蒸留装置に装入し、つ
いで同じく第１°表に示される条件で精製処理を施すこ
とによって１本発明高純度ｐｂ材１〜９をそれぞれ製造
した。By preparing high-purity PB materials having the properties shown in Table 1, charging this high-purity PB material into a vacuum distillation apparatus, and then performing purification treatment under the conditions also shown in Table 1. 1 High-purity PB materials 1 to 9 of the present invention were manufactured, respectively.
ついで、この結果得られた本発明高純度ｐｂ材１〜９に
ついて、その性質を測定すると共に、これをＡｇ：５．
４重量％を含有し、残りがｐｂと不可避不純物からなる
組成を有するｐｂ金合金う材の原料として用い、さらに
この結果得られたｐｂ金合金う材を、圧延加工により縦
：１５ｗＸ横：１０＋ｗＸ幅：１ｍＸ厚さ：０．０５−
の寸法をもった窓枠状とした状態で、４１図に示される
ＩＣの組立てに際して、封着板のセラミックケースへの
ろう一付は接合に使用し、組立て後のＩＣのメモリーエ
ラーを測定した。これ゛らの測定結果を第１表に示した
。Next, the properties of the high-purity PB materials 1 to 9 of the present invention obtained as a result were measured, and they were compared to Ag: 5.
4% by weight, with the remainder consisting of PB and unavoidable impurities.The resulting PB gold alloy filling material was further rolled to a length of 15wX width: 10+wX. Width: 1mX Thickness: 0.05-
When assembling the IC shown in Figure 41 in a window frame shape with dimensions of . The results of these measurements are shown in Table 1.
また、比較の目的で、それぞれ第１表に示される９種類
の高純度ｐｂ材を用いて同一の条件でｐｂ金合金う材を
製造し、これを同じく同一の条件でＩＣ組立てに使用し
、組立て後のＩＣのメモリーエラーを測定した。In addition, for the purpose of comparison, PB gold alloy fillers were manufactured under the same conditions using the nine types of high-purity PB materials shown in Table 1, and used for IC assembly under the same conditions. Memory errors of the IC after assembly were measured.
＠１表に示される結果から、本発明高純度ｐｂ材１へ９
は、いづれも９９．９９９％以上の高純度を有し、放射
性同位元素の含Ｗｌｋが５ｐｐｂ未満？ニして、放射性
４１粒子のカウント数も０．０９ＣＰＨ／−以下の性質
をもつので、これを原料として用いて製造されたｐｂ金
合金う材においては、これを半導体装置の組立てに用い
ても組立て後の半導体装置にメモリーエラーの発生は皆
無であるのに対して、高純度ｐｂ材を用いて製造された
従来ｐｂ金合金う材においては、いずれの場合も組立て
後の半導体装置Ｃ二ｐｂ合金ろう材が原因のメモリーエ
ラーの発生が見られるものであった。From the results shown in @1 table, go to high purity PB material 1 of the present invention 9
All have high purity of 99.999% or more, and the content of radioactive isotopes Wlk is less than 5 ppb? Furthermore, since the count number of radioactive 41 particles is less than 0.09 CPH/-, the PB gold alloy material manufactured using this material as a raw material cannot be used for assembling semiconductor devices. While there is no memory error in the semiconductor device after assembly, in any case with the conventional PB gold alloy material manufactured using high-purity PB material, the semiconductor device C2pb after assembly Memory errors were observed to occur due to the alloy brazing filler metal.
上述のように、この発明の高純度ｐｂ材によれば、半導
体装置の組立てにろう材として用いてもメモリーエラー
の発生が皆無のｐｂ金合金う材を製造することができる
のである。As described above, according to the high purity PB material of the present invention, it is possible to produce a PB gold alloy filler material that causes no memory errors even when used as a brazing material in the assembly of semiconductor devices.
ｍ１図は半導体装置の１例としてのＩＣセラミツク・パ
ッケージを示す概略縦断面図である。
１・・・セラミックケース、 ２・・・半導体素子。
３・・・ポンディングワイヤ、 ４・・・封着板、５・
・・リード材。Figure m1 is a schematic longitudinal sectional view showing an IC ceramic package as an example of a semiconductor device. 1...Ceramic case, 2...Semiconductor element. 3... Bonding wire, 4... Sealing plate, 5...
...Lead material.
Claims (1)
以下、 の条件を満足することを特徴とする半導体装置の組立て
用Ｐｂ合金ろう材の製造に用いられる高純度Ｐｂ材。[Claims] Purity: 99.999% or more, Radioisotope content: less than 5 ppb, Radioactive α particle count: 0.09 CPH/cm^2
A high-purity Pb material used for manufacturing a Pb alloy brazing material for assembling semiconductor devices, characterized by satisfying the following conditions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6298085A JPS61222142A (en) | 1985-03-27 | 1985-03-27 | High-purity pb material used for manufacturing pb alloy solder material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6298085A JPS61222142A (en) | 1985-03-27 | 1985-03-27 | High-purity pb material used for manufacturing pb alloy solder material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61222142A true JPS61222142A (en) | 1986-10-02 |
Family
ID=13216012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6298085A Pending JPS61222142A (en) | 1985-03-27 | 1985-03-27 | High-purity pb material used for manufacturing pb alloy solder material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61222142A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01321094A (en) * | 1988-06-24 | 1989-12-27 | Mitsubishi Metal Corp | High-purity pb material used for production of pb alloy brazing filler metal for assembling semiconductor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58151037A (en) * | 1982-03-02 | 1983-09-08 | Mitsubishi Metal Corp | Lead (pb) alloy brazing material for semiconductor device |
-
1985
- 1985-03-27 JP JP6298085A patent/JPS61222142A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58151037A (en) * | 1982-03-02 | 1983-09-08 | Mitsubishi Metal Corp | Lead (pb) alloy brazing material for semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01321094A (en) * | 1988-06-24 | 1989-12-27 | Mitsubishi Metal Corp | High-purity pb material used for production of pb alloy brazing filler metal for assembling semiconductor |
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