JPH02290030A - Manufacture of filler material for ic package - Google Patents
Manufacture of filler material for ic packageInfo
- Publication number
- JPH02290030A JPH02290030A JP11349589A JP11349589A JPH02290030A JP H02290030 A JPH02290030 A JP H02290030A JP 11349589 A JP11349589 A JP 11349589A JP 11349589 A JP11349589 A JP 11349589A JP H02290030 A JPH02290030 A JP H02290030A
- Authority
- JP
- Japan
- Prior art keywords
- silica
- less
- high purity
- equal
- crystalline silica
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000945 filler Substances 0.000 title claims description 9
- 239000000463 material Substances 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 64
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 18
- 229910002026 crystalline silica Inorganic materials 0.000 claims abstract description 10
- 239000005350 fused silica glass Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 18
- 239000000843 powder Substances 0.000 abstract description 15
- 239000012535 impurity Substances 0.000 abstract description 7
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 abstract description 3
- 229910052776 Thorium Inorganic materials 0.000 abstract description 3
- 229910052770 Uranium Inorganic materials 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 239000010419 fine particle Substances 0.000 abstract description 3
- 239000011159 matrix material Substances 0.000 abstract description 3
- 239000011347 resin Substances 0.000 abstract description 3
- 229920005989 resin Polymers 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 230000009974 thixotropic effect Effects 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 abstract description 3
- 229910000272 alkali metal oxide Inorganic materials 0.000 abstract description 2
- 230000008016 vaporization Effects 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000010292 electrical insulation Methods 0.000 description 5
- 230000005260 alpha ray Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 102100033491 THO complex subunit 2 Human genes 0.000 description 1
- 101710139407 THO complex subunit 2 Proteins 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野）
本発明は、ＩＣのプラスチックパッケージに用いるＩＣ
パッケージ用フイラー材の製造方法に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to an IC used in a plastic package of an IC.
The present invention relates to a method for producing filler material for packaging.
（従来の技術）
通常、ＩＣパッケージ用フィラー材としては、結晶買シ
リカ又は溶融シリカの粉末が使用されている。(Prior Art) Generally, crystalline purchased silica or fused silica powder is used as a filler material for IC packages.
上記結晶質シリカ粉は、自然に産する石英、水晶、クリ
ストバライト （高温型石英）等の結晶構造をもつ原料
を粉砕して製造され、又、溶融シリカ粉は、上述した結
晶構造をもつ原料やケイ石又はケイ砂等の原料を溶融さ
せ、この溶融物を粉砕して製造されている。The above-mentioned crystalline silica powder is produced by pulverizing naturally occurring raw materials with a crystal structure such as quartz, quartz, cristobalite (high-temperature quartz), etc., and the fused silica powder is manufactured by pulverizing raw materials with a crystal structure such as naturally occurring quartz, quartz, cristobalite (high-temperature quartz), etc. It is manufactured by melting raw materials such as silica stone or silica sand and pulverizing this melt.
しかしながら、上記従来の製造方法によフて得られた結
晶質シリカ又は溶融シリカの粉末をＩＣプラスチックパ
ッケージ用フィラー材として使用すると、電気的絶縁性
に経時変化が生じ易く、又、Ａ１配線の腐蝕等があり必
ずしも満足すべきものとはなっていなかった。本発明者
等は上述の欠点を生ずる原因を究明した結果、これらの
原料中に含まれるＡｌｚ０３，ＦＱｚＱ３，Ｎａ２０，
Ｋ２Ｑ．ｌＪＱ２，Ｔｈ０２の存在が無視できないこと
が明らかとなった。モしてＦｅ．０３の存在は電気的絶
縁特性を経時的に変化させ、又、Ｎａ２０，Ｋ２０はＡ
１配線の腐蝕を増進させ易い。又、ＵＯ２やＴｈ０２等
の放射性元素の存在はα線ソフトエラーの原因となるこ
とが明らかとなった。However, when crystalline silica or fused silica powder obtained by the above-mentioned conventional manufacturing method is used as a filler material for IC plastic packages, the electrical insulation properties tend to change over time, and the A1 wiring is corroded. etc., and the results were not necessarily satisfactory. As a result of investigating the cause of the above-mentioned defects, the present inventors found that Alz03, FQzQ3, Na20,
K2Q. It became clear that the presence of lJQ2 and Th02 cannot be ignored. Mote Fe. The presence of 03 changes the electrical insulation properties over time, and Na20 and K20 change the electrical insulation properties over time.
1.Easy to increase corrosion of wiring. Furthermore, it has been revealed that the presence of radioactive elements such as UO2 and Th02 causes α-ray soft errors.
そこで、本発明は、電気的絶縁特性の経時的な変化、Ａ
１配線の腐蝕及びα線ソフトエラーを招来することのな
いＩＣパッケージ用フイラー材の製造方法の提供を目的
とする。Therefore, the present invention deals with changes in electrical insulation properties over time, A
An object of the present invention is to provide a method for manufacturing a filler material for an IC package that does not cause corrosion of one wiring or α-ray soft error.
前記課題を解決するため、本発明は、炭素の存在下で、
高純度の結晶貿シリカ又は溶融シリカを１５００〜２５
００℃に加熱して蒸気化し、これを酸素含有雰囲気中で
捕集する方法である。In order to solve the above problems, the present invention provides, in the presence of carbon,
High purity crystal trade silica or fused silica 1500~25
This method involves heating to 00°C to vaporize it, and collecting it in an oxygen-containing atmosphere.
上記手段においては、高純度の結晶貿シリカ又は溶融シ
リカが炭素と反応してＳｉＯとして蒸気化し、捕集され
た蒸気は、空気中の酸素と反応してＳｉ０２の微粒子と
なって析出し、実質的にウランおよびトリウムを含有せ
ず、アルカリ金属酸化物が１０ＰＰＭ以下、総不純物含
有率がＩＯＯＰＰＭ以下で、かつ粒径が０．１ μｍ以
下の球状のシリカが得られる。In the above means, high-purity crystalline trade silica or fused silica reacts with carbon to vaporize as SiO, and the collected vapor reacts with oxygen in the air to precipitate as fine particles of SiO2, and the Spherical silica containing no uranium or thorium, an alkali metal oxide content of 10 PPM or less, a total impurity content of IOOPPM or less, and a particle size of 0.1 μm or less can be obtained.
酸素含有霊囲気な空気中とする場合の加熱温度は、２０
００〜２５００℃とし、減圧下とする場合のそれは、１
５００〜２０００℃と程度とすることが望ましく、いず
れの場合でも、加熱温度が下限未満であると、充分な蒸
気化速度が得られず、かつ不純物を含む蒸気が長い間発
生し、高純度のフィラー材の収率が悪い。一方、加熱温
度か上限を超えると、蒸発が速すぎ、同様に高純度フィ
ラー材として使える量が減少してしまう。The heating temperature in oxygen-containing atmosphere is 20
When the temperature is 00 to 2500℃ and under reduced pressure, it is 1
It is desirable to set the heating temperature to about 500 to 2000°C. In any case, if the heating temperature is below the lower limit, a sufficient vaporization rate will not be obtained, and steam containing impurities will be generated for a long time, resulting in high purity. Poor yield of filler material. On the other hand, if the heating temperature exceeds the upper limit, evaporation will be too rapid, and the amount that can be used as a high-purity filler material will similarly decrease.
又、蒸気を空気中で捕集ずる場合、加熱初期のもの、あ
るいは末期のものは、Ｓ１０２以外の不純物が集中的に
揮散することが多いので、本発明のものとしては適さな
い。Furthermore, when vapor is collected in the air, it is not suitable for the present invention because impurities other than S102 often volatilize intensively in the early stage or late stage of heating.
以下、木発明の実施例を説明する。 Examples of the wooden invention will be described below.
結晶質シリカをフッ酸洗浄等により高純度化した後、こ
れを空気中て炭素の存在下において２２００℃で加熱蒸
発させ、この蒸気を捕集して一層高純度の結晶質シリカ
粉末を得た。After highly purified crystalline silica by washing with hydrofluoric acid, etc., it was heated and evaporated at 2200°C in the presence of carbon in air, and this vapor was collected to obtain crystalline silica powder with even higher purity. .
得られた本発明のシリカ粉と、従来の高純度結晶質シリ
カ粉および溶融シリカ粉との成分を比較して示す。The components of the obtained silica powder of the present invention and conventional high-purity crystalline silica powder and fused silica powder are compared and shown.
このような組成の差を有するシリカ粉をＩＣプラスチッ
クバツケーシ用フイラー制としてイ吏用した場合におけ
る特性の差を比較したところ、本発明のものは、アルカ
リ含有量かきわめて少ないため高温、高温下てのＡＩ配
線の腐蝕か認められず、８５℃ ８５％ ＲＨのバイア
ス試験で４０００時間以上変化が認められなかった。又
、ＶＬＳＩ用として使用した場合ても００２およびＴ
Ｈ Ｏ ２を実質的に含有していないため、α一線ソフ
トエラーは認められなかった。When we compared the differences in properties when silica powders having such compositional differences were used as filler systems for IC plastic bags, we found that the silica powder of the present invention has extremely low alkali content and is therefore resistant to high temperatures and high temperatures. No corrosion was observed in the AI wiring, and no change was observed in a bias test at 85°C and 85% RH for over 4000 hours. Also, even when used for VLSI, 002 and T
Since it did not substantially contain H 2 O 2 , no α-line soft error was observed.
これに対し従来のシリカ粉は、上記のような不純物に基
因するＡＩ配線に腐｛ｉｌｌ！が認められ、又、ｕ０２
およびＴＨＯ２を含有するためα線ソフトエラも認めら
れた。On the other hand, conventional silica powder causes corrosion in AI wiring due to impurities such as those mentioned above. was recognized, and u02
And α-ray soft errors were also observed due to the presence of THO2.
本発明のものは、０．１μｍ以下ときわめて粉径が小さ
く、かつ球状であるため、樹脂と混合した時に充分なる
チキソトロビー性があり、強力なマトリックスを形成す
るという効果も発揮し得た。Since the powder of the present invention has an extremely small powder diameter of 0.1 μm or less and is spherical, it had sufficient thixotropic properties when mixed with a resin, and was also able to exhibit the effect of forming a strong matrix.
以上のように本発明によれば、高純度の結晶質シリカ又
は溶融シリカが炭素と反応してＳｉＯとして蒸気化し、
捕集された蒸気は、空気中の酸素と反応してＳｉｎ２の
微粒子となって析出し、実質的にウランおよびトリウム
を含有せず、アルカリ金属不純物がＩＯＰＰＭ以下、総
不純物含有率がＩＯＯＰＰＭ以下で、かつ粒径０１μｍ
以下の球状のシリカが得られるので、従来の方法による
シリカに比して、電気的絶縁特性の経時的な変化、ＡＩ
配線の腐蝕が認められないと共に、α線ソフトエラーも
認められず、かつ樹脂と混合した時に充分なるチキソト
ロビー性があり、強力なマトリックスを形成できる。As described above, according to the present invention, high-purity crystalline silica or fused silica reacts with carbon and vaporizes as SiO,
The collected vapor reacts with oxygen in the air and precipitates as fine particles of Sin2, substantially containing no uranium or thorium, with an alkali metal impurity of less than IOPPM, and a total impurity content of less than IOPPM. , and particle size 01μm
Since the following spherical silica is obtained, compared to silica obtained by conventional methods, changes in electrical insulation properties over time, AI
No corrosion of wiring is observed, no α-ray soft error is observed, and when mixed with resin, it has sufficient thixotropic properties and can form a strong matrix.
Claims (1)
シリカを１５００〜２５００℃に加熱して蒸気化し、こ
れを酸素含有雰囲気中で捕集することを特徴とするＩＣ
パッケージ用フィラー材の製造方法。(1) An IC characterized by heating high-purity crystalline silica or fused silica to 1500 to 2500°C to vaporize it in the presence of carbon, and collecting it in an oxygen-containing atmosphere.
A method for producing filler material for packaging.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11349589A JPH02290030A (en) | 1989-05-02 | 1989-05-02 | Manufacture of filler material for ic package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11349589A JPH02290030A (en) | 1989-05-02 | 1989-05-02 | Manufacture of filler material for ic package |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15776982A Division JPS5947744A (en) | 1982-09-10 | 1982-09-10 | Filler material for ic package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02290030A true JPH02290030A (en) | 1990-11-29 |
| JPH0578182B2 JPH0578182B2 (en) | 1993-10-28 |
Family
ID=14613765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11349589A Granted JPH02290030A (en) | 1989-05-02 | 1989-05-02 | Manufacture of filler material for ic package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02290030A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102730701A (en) * | 2012-07-30 | 2012-10-17 | 焦作市科力达科技有限公司 | Method for preparing high-purity fumed silica by using electric smelting zirconia tail gas |
-
1989
- 1989-05-02 JP JP11349589A patent/JPH02290030A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102730701A (en) * | 2012-07-30 | 2012-10-17 | 焦作市科力达科技有限公司 | Method for preparing high-purity fumed silica by using electric smelting zirconia tail gas |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0578182B2 (en) | 1993-10-28 |
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