JPS5946917B2 - 結晶成長炉 - Google Patents

結晶成長炉

Info

Publication number
JPS5946917B2
JPS5946917B2 JP14172276A JP14172276A JPS5946917B2 JP S5946917 B2 JPS5946917 B2 JP S5946917B2 JP 14172276 A JP14172276 A JP 14172276A JP 14172276 A JP14172276 A JP 14172276A JP S5946917 B2 JPS5946917 B2 JP S5946917B2
Authority
JP
Japan
Prior art keywords
chamber
temperature
crystal growth
growth furnace
solute
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14172276A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5265777A (en
Inventor
アラン・ブルネ・ジヤイユ
ジヤン・ジヤレ
ベルナール・ペリシアリ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KOMITSUSARIA TA RENERUGII ATOMIIKU
Original Assignee
KOMITSUSARIA TA RENERUGII ATOMIIKU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KOMITSUSARIA TA RENERUGII ATOMIIKU filed Critical KOMITSUSARIA TA RENERUGII ATOMIIKU
Publication of JPS5265777A publication Critical patent/JPS5265777A/ja
Publication of JPS5946917B2 publication Critical patent/JPS5946917B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP14172276A 1975-11-25 1976-11-25 結晶成長炉 Expired JPS5946917B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7535997A FR2332799A1 (fr) 1975-11-25 1975-11-25 Four de cristallisation

Publications (2)

Publication Number Publication Date
JPS5265777A JPS5265777A (en) 1977-05-31
JPS5946917B2 true JPS5946917B2 (ja) 1984-11-15

Family

ID=9162859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14172276A Expired JPS5946917B2 (ja) 1975-11-25 1976-11-25 結晶成長炉

Country Status (7)

Country Link
JP (1) JPS5946917B2 (nl)
CA (1) CA1087964A (nl)
DE (1) DE2653414A1 (nl)
FR (1) FR2332799A1 (nl)
GB (1) GB1545966A (nl)
IT (1) IT1064616B (nl)
NL (1) NL184526C (nl)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404172A (en) * 1981-01-05 1983-09-13 Western Electric Company, Inc. Method and apparatus for forming and growing a single crystal of a semiconductor compound
JP2717568B2 (ja) * 1989-02-21 1998-02-18 株式会社フューテックファーネス 単結晶育成装置
US5698029A (en) * 1995-06-06 1997-12-16 Kabushiki Kaisha Kobe Sekio Sho Vertical furnace for the growth of single crystals
FR2741633B1 (fr) * 1995-11-23 1997-12-19 Commissariat Energie Atomique Four de cristallisation pour materiau a faible conductivite thermique et/ou faible durete
DE10239104B4 (de) 2002-08-27 2006-12-14 Crystal Growing Systems Gmbh Kristallzüchtungsofen, nämlich Vertical-Bridgman- oder Vertical-Gradient-Freeze-Kristallzüchtungsofen mit einem Mantelheizer und Verfahren zur Regelung der Heizleistung des Mantelheizers

Also Published As

Publication number Publication date
CA1087964A (en) 1980-10-21
DE2653414C2 (nl) 1989-04-06
JPS5265777A (en) 1977-05-31
FR2332799A1 (fr) 1977-06-24
NL184526B (nl) 1989-03-16
GB1545966A (en) 1979-05-16
NL7612969A (nl) 1977-05-27
IT1064616B (it) 1985-02-25
NL184526C (nl) 1989-08-16
FR2332799B1 (nl) 1978-04-14
DE2653414A1 (de) 1977-06-30

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