JPS5265777A - Crystal growth furnace - Google Patents

Crystal growth furnace

Info

Publication number
JPS5265777A
JPS5265777A JP14172276A JP14172276A JPS5265777A JP S5265777 A JPS5265777 A JP S5265777A JP 14172276 A JP14172276 A JP 14172276A JP 14172276 A JP14172276 A JP 14172276A JP S5265777 A JPS5265777 A JP S5265777A
Authority
JP
Japan
Prior art keywords
crystal growth
growth furnace
furnace
crystal
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14172276A
Other languages
Japanese (ja)
Other versions
JPS5946917B2 (en
Inventor
Burune Jiyaiyu Aran
Jiyare Jiyan
Perishiari Berunaaru
Shiyoo Berunaaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of JPS5265777A publication Critical patent/JPS5265777A/en
Publication of JPS5946917B2 publication Critical patent/JPS5946917B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP14172276A 1975-11-25 1976-11-25 crystal growth furnace Expired JPS5946917B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7535997A FR2332799A1 (en) 1975-11-25 1975-11-25 CRYSTALLIZATION OVEN

Publications (2)

Publication Number Publication Date
JPS5265777A true JPS5265777A (en) 1977-05-31
JPS5946917B2 JPS5946917B2 (en) 1984-11-15

Family

ID=9162859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14172276A Expired JPS5946917B2 (en) 1975-11-25 1976-11-25 crystal growth furnace

Country Status (7)

Country Link
JP (1) JPS5946917B2 (en)
CA (1) CA1087964A (en)
DE (1) DE2653414A1 (en)
FR (1) FR2332799A1 (en)
GB (1) GB1545966A (en)
IT (1) IT1064616B (en)
NL (1) NL184526C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02221180A (en) * 1989-02-21 1990-09-04 Fuyuutec Fuaanesu:Kk Device for growing single crystal

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404172A (en) * 1981-01-05 1983-09-13 Western Electric Company, Inc. Method and apparatus for forming and growing a single crystal of a semiconductor compound
US5698029A (en) * 1995-06-06 1997-12-16 Kabushiki Kaisha Kobe Sekio Sho Vertical furnace for the growth of single crystals
FR2741633B1 (en) * 1995-11-23 1997-12-19 Commissariat Energie Atomique CRYSTALLIZATION OVEN FOR MATERIAL WITH LOW THERMAL CONDUCTIVITY AND / OR LOW HARDNESS
DE10239104B4 (en) 2002-08-27 2006-12-14 Crystal Growing Systems Gmbh Crystal growing furnace, namely, vertical bridging or vertical gradient freeze crystal growing furnace with a shell heater and method of controlling the heating power of the jacket heater

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02221180A (en) * 1989-02-21 1990-09-04 Fuyuutec Fuaanesu:Kk Device for growing single crystal

Also Published As

Publication number Publication date
DE2653414C2 (en) 1989-04-06
NL184526C (en) 1989-08-16
FR2332799B1 (en) 1978-04-14
DE2653414A1 (en) 1977-06-30
NL184526B (en) 1989-03-16
CA1087964A (en) 1980-10-21
FR2332799A1 (en) 1977-06-24
NL7612969A (en) 1977-05-27
JPS5946917B2 (en) 1984-11-15
GB1545966A (en) 1979-05-16
IT1064616B (en) 1985-02-25

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