CA1087964A - Crystal growing furnace - Google Patents

Crystal growing furnace

Info

Publication number
CA1087964A
CA1087964A CA266,569A CA266569A CA1087964A CA 1087964 A CA1087964 A CA 1087964A CA 266569 A CA266569 A CA 266569A CA 1087964 A CA1087964 A CA 1087964A
Authority
CA
Canada
Prior art keywords
temperature
chamber
solute
crystallisation
crystal growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA266,569A
Other languages
English (en)
French (fr)
Inventor
Alain Brunet-Jailly
Jean Gallet
Bernard Pelliciari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of CA1087964A publication Critical patent/CA1087964A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003Heating or cooling of the melt or the crystallised material
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CA266,569A 1975-11-25 1976-11-25 Crystal growing furnace Expired CA1087964A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7535997A FR2332799A1 (fr) 1975-11-25 1975-11-25 Four de cristallisation
FREN75.35997 1975-11-25

Publications (1)

Publication Number Publication Date
CA1087964A true CA1087964A (en) 1980-10-21

Family

ID=9162859

Family Applications (1)

Application Number Title Priority Date Filing Date
CA266,569A Expired CA1087964A (en) 1975-11-25 1976-11-25 Crystal growing furnace

Country Status (7)

Country Link
JP (1) JPS5946917B2 (nl)
CA (1) CA1087964A (nl)
DE (1) DE2653414A1 (nl)
FR (1) FR2332799A1 (nl)
GB (1) GB1545966A (nl)
IT (1) IT1064616B (nl)
NL (1) NL184526C (nl)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404172A (en) * 1981-01-05 1983-09-13 Western Electric Company, Inc. Method and apparatus for forming and growing a single crystal of a semiconductor compound
JP2717568B2 (ja) * 1989-02-21 1998-02-18 株式会社フューテックファーネス 単結晶育成装置
US5698029A (en) * 1995-06-06 1997-12-16 Kabushiki Kaisha Kobe Sekio Sho Vertical furnace for the growth of single crystals
FR2741633B1 (fr) * 1995-11-23 1997-12-19 Commissariat Energie Atomique Four de cristallisation pour materiau a faible conductivite thermique et/ou faible durete
DE10239104B4 (de) 2002-08-27 2006-12-14 Crystal Growing Systems Gmbh Kristallzüchtungsofen, nämlich Vertical-Bridgman- oder Vertical-Gradient-Freeze-Kristallzüchtungsofen mit einem Mantelheizer und Verfahren zur Regelung der Heizleistung des Mantelheizers

Also Published As

Publication number Publication date
DE2653414C2 (nl) 1989-04-06
JPS5265777A (en) 1977-05-31
FR2332799A1 (fr) 1977-06-24
NL184526B (nl) 1989-03-16
GB1545966A (en) 1979-05-16
NL7612969A (nl) 1977-05-27
IT1064616B (it) 1985-02-25
NL184526C (nl) 1989-08-16
FR2332799B1 (nl) 1978-04-14
JPS5946917B2 (ja) 1984-11-15
DE2653414A1 (de) 1977-06-30

Similar Documents

Publication Publication Date Title
KR890002065B1 (ko) 단결정 육성장치 및 단결정 육성방법
US3898051A (en) Crystal growing
US3359077A (en) Method of growing a crystal
US3621213A (en) Programmed digital-computer-controlled system for automatic growth of semiconductor crystals
US2892739A (en) Crystal growing procedure
CA1087964A (en) Crystal growing furnace
CN1498988A (zh) 制造掺杂高挥发性异物的硅单晶的方法
JPH07511B2 (ja) 半導体シリコン単結晶の製造方法
CN112410870B (zh) 基于液相外延法生长碳化硅晶体的生长控制方法及系统
US4436577A (en) Method of regulating concentration and distribution of oxygen in Czochralski grown silicon
US5096677A (en) Single crystal pulling apparatus
US3507625A (en) Apparatus for producing binary crystalline compounds
Gentile et al. A constant temperature method for the growth of KTN single crystals
CA1171342A (en) Method of making magnetic film substrate composites
US3265470A (en) Method and apparatus for floating-zone melting of semiconductor material
Valentino et al. Diameter control of czochralski grown crystals
KR19990072583A (ko) 실리콘단결정의제조방법
US3342560A (en) Apparatus for pulling semiconductor crystals
Otani et al. Preparation of LaB6 single crystals by the floating zone method
Kremer et al. Composition gradients and segregation in Hg1− xMnxTe
Majchrowski et al. Crystal growth of mixed titanium sillenites
LINARES Substitution of Aluminum and Gallium in Single‐Crystal Yttrium Iron Garnets
KR940006041B1 (ko) 단결정 연속 성장법 및 연속성장 장치
Hurle et al. Elements of the Process
Ciszek et al. A simple high-pressure furnace for liquid-encapsulated Bridgman/Stockbarger crystal growth

Legal Events

Date Code Title Description
MKEX Expiry