JPS5946044A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5946044A
JPS5946044A JP57156415A JP15641582A JPS5946044A JP S5946044 A JPS5946044 A JP S5946044A JP 57156415 A JP57156415 A JP 57156415A JP 15641582 A JP15641582 A JP 15641582A JP S5946044 A JPS5946044 A JP S5946044A
Authority
JP
Japan
Prior art keywords
power supply
capacitance
logic
supply wiring
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57156415A
Other languages
Japanese (ja)
Inventor
Masakazu Kaga
加賀 雅和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57156415A priority Critical patent/JPS5946044A/en
Publication of JPS5946044A publication Critical patent/JPS5946044A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232Field-effect technology
    • H01L21/8234MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To inhibit the generation of switching noises even using a thin power supply wiring by setting up a capacitance between a power supply wire in a master slice system logic IC and a ground wire. CONSTITUTION:The capacitance 607 is arranged at a position where a cell series is divided into N pieces of equal parts between the pectinate power supply wire 602 of a logic IC pellet and the ground wire 605, charges are fed from the capacitance 607 on the switching of a logic circuit, and a voltage drop generated in a power supply wiring is reduced to lower noises up to 1/N. Capacitance is obtained as the sum of MOS capacitance through an insulating film 706 and the junction capacitance of an N type substrate 703 and a P layer 704 when the width of the ground wire 701 is widened selectively and connected to the substrate 703 and the power supply wire 702 is connected to the layer 704. According to said constitution, the device is made free from noises due to the impedance of the power supply wiring only by previously dispersing and arranging capacitance to a power supply wiring system.

Description

【発明の詳細な説明】 本発明は半導体装置に係り、特にマスタースライス方式
の半導体装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device, and particularly to a master slice type semiconductor device.

M近の論理集積回路(・ま、遅延時間・消費市、力(1
(の僅位性の点から、相補型MO8論理回路に見られる
ように、静止時における電力消費を4・V力減少さ一1
上、かつスイッチング時のみに消質隼力の多くを消費す
る論理回路によって形成される機会がますます多くなり
つつある。従才、この種の論理集積回路に対しては、電
源配線系は、静止時に:j6 kJる低消費電力性から
細(・電赤配緑を使用しC1,・る。
Logic integrated circuit near M (・Ma, delay time・consumption city, power (1
(From the point of view of the small size of
Increasingly, logic circuits are formed by logic circuits that consume much of the energy consumption only when switching. However, for this type of logic integrated circuit, the power supply wiring system is thin due to its low power consumption of: j6 kJ when at rest.

遅延時間の減少すなわち、高速スイッチングを実現する
ためには、負荷と1よる侶号配r、f容用及び、論理回
路を形成する素子自体の持つ容−Fliを速べ・かに、
充・放電1べく、太きt(駆動電流が必要となるが該駆
動電流は、全て論理集積回路の電Oり1供給線、或いは
、接地電位供給線を介して論理化積回路に供給される。
In order to reduce the delay time, that is, to realize high-speed switching, it is necessary to increase the capacity of the load and the capacity of the elements themselves that form the logic circuit.
For charging and discharging, a thick T (driving current is required, but the driving current is supplied to the logic product circuit via the logic integrated circuit's power supply line or the ground potential supply line. Ru.

したがって従来のように、細(・電源配線系を使用した
のでは、マスター・スライス方式LSIのように、予め
(下地設計段ト、〜に′i5いて)その動作しつ(・て
予測できなし・ものにつ(・ては、電源配線系のインピ
ータンスにより、品速スイッチング時にノイズか発生し
、誤動作もしくは、素子自身のもつ、高速ヌイッグーン
ク能力か、活かされず、十分な性能が発揮できなくなる
Therefore, if a thin power supply wiring system was used as in the past, it would be impossible to predict its operation in advance (at the base design stage), as in master slice LSIs. - Due to the impedance of the power supply wiring system, noise may be generated during high-speed switching, resulting in malfunction or the high-speed switching ability of the element itself not being utilized, and sufficient performance may not be achieved.

本発明は、上記の欠点を解消した論理集オ?(回路に関
する。
The present invention provides a logic collection solution that eliminates the above-mentioned drawbacks. (Regarding circuits.

本発明の特徴は、マスタースライス方式論理集粘回路の
ド地のfi:i状ル佇配イ゛A糸にお(・−(,1(j
、柳m。
The feature of the present invention is that the fi:i-shaped loop layout of the master slice logic concentrator circuit is
, Yanagi m.

圧(It給線と4v:”t!’ ?t?位伊給線どの間
にナツツ内のセル系列4θItt Is: 宅ζ(+6
1のコンデンサーを設り、各セル系列を等分する缶&V
L該コンテンザーを酢1ねした半嗜体装rKある。
Pressure (It supply line and 4v: "t!'
1 capacitor is installed and each cell series is equally divided into cans & V.
There is a semi-adulterated version of the condenser mixed with vinegar.

次にし1によって木兄り」のlit !!を訃1す1す
る。
Next 1 by ``Ki-niri'' lit! ! The death of the deceased.

第1図) 卯、 2 図&?、一般的7.Cs 相補型
M O5Xir埋回路であり、第1図は、入力端子10
3がらの入力電圧が高レベルから、但レベルに遷移する
と負荷容量(づLを充電1べく、1N、流■が尖頭電流
IPPをもって電t19、供給線より一時流れることを
、また第2図は、入力弯、”子203がらの入力m、圧
が、低レベルか1′)高L/ベルに′jも1移すると、
負荷各+1−i−(づ1、を放■ぢべく、相流11か尖
頭−流’NPをもっ−(、接地電位供給線へ瞬時流れる
ことを示し1いる。
Figure 1) Rabbit, Figure 2 &? , general 7. Cs is a complementary type MO5Xir embedded circuit, and FIG. 1 shows the input terminal 10.
Figure 2 also shows that when the input voltage of 3 transitions from a high level to a low level, a current of 1N temporarily flows from the supply line with a peak current IPP. is the input curve, the input m from the child 203, and the pressure is at a low level or 1') If 'j is also shifted by 1 to high L/bell,
In order to discharge each load +1-i-(zu1), phase current 11 or peak-current 'NP' is shown to flow instantaneously to the ground potential supply line.

第1図および第2図に示しであるよう/J、相補型MO
8論理回路を電源系統に着目して第3図りように描くと
、第4図の111it状電源配線系をもったマスター・
スライス方式の論理集積回路の電源系粕の等価回路は、
第5図のようになる。電源供給線のタ■部人力仰1から
見て、第り番目とlよ−)*i・狸回路Giのみが、ス
イッチングし、負荷容量を光■1゜すべく電源を■i源
(,11給線より供給を受1゛たとすン・ど、電源供給
線に生じる夕を部入力からの電圧「TΔviは、 Δv7(t)−3g ・I 、、(t)  (L(’4
≧O)ノ=1 となる。したがって上式を重ね合せの坦」により、−膜
化すると、m、源供給線の外部入力からR;−とも離れ
た論理回路GNに供給される宙、源電位4−での電圧降
下を式で表わすと次式と′1.【る。
/J, complementary MO as shown in Figures 1 and 2.
If we draw the 8 logic circuit as shown in Figure 3 with a focus on the power supply system, we will see a master circuit with a 111-bit power supply wiring system as shown in Figure 4.
The equivalent circuit of the power supply system dregs of a slice-type logic integrated circuit is
It will look like Figure 5. Only the raccoon circuit Gi switches and connects the power supply to ■i source (, When power is supplied from the power supply line 1, the voltage from the input that occurs on the power supply line is ``TΔvi, Δv7(t)-3g ・I, , (t) (L('4
≧O)ノ=1. Therefore, by converting the above equation into a film by superposition, we can express the voltage drop at the source potential 4-, which is supplied to the logic circuit GN which is far from the external input of the source supply line R;-. Expressed as the following equation and '1. [ru.

現在、膵速スイッチング按」、のため各々の論理回路が
、電源測1かも数7n Aの尖頭(直る・−もっ飛流σ
)供給を受けてい2.ので、複f、jt個の論理lIJ
!跡が同時にスイッチング動作を行うち一合、電漉配舵
に、13y iクロンの幅の配線を用(・れげ、該雷源
配純の電圧降下は、胴詩的に数百m ”Jにも達し、こ
JIがノイズと17つ、誤動作もしくは、実質的電源箱
圧低下による遅延時間の増大を併うことにブ4る。した
がってこの間脱を避りるため15に0才は、市、源耐1
111Ij!幅を十分、太くする必要Σ)リシ、Zが、
こ」1では、信弓配糸iノ?◇DjB峙こ制約をうけ、
チップ1h1檀の」7:太を併う。
Currently, due to the pancreatic speed switching system, each logic circuit has a power supply of 1 or several 7n A peak (correction - more flying current σ
) are supplied 2. Therefore, complex f, jt logic lIJ
! When the traces perform switching operations at the same time, a wire with a width of 13yicm is used for the electric steering. 4, and this JI is accompanied by noise, malfunction, or an increase in delay time due to a substantial drop in power supply box pressure.Therefore, in order to avoid failure during this period, 15 to 0 year olds are not allowed to enter the market. , source resistance 1
111Ij! It is necessary to make the width sufficiently thick Σ) Rishi, Z,
In "Ko" 1, Shinkyumi Iino? ◇Due to DjB competition restrictions,
Chip 1h1dan's 7: Includes fat.

本発明は、このjlり題fa )督決し、細(・1Vυ
fIlji、’特使用時にト((・ても、スイッチング
時にお1゛るノイズの発イトを仰、也ろべく、マスター
・スラ・イス方式の論狸焦(吉回路の内削、の電源P絵
絹と接j′J1電位4.11船線の間にコンデンサを形
成し、M埋回路のスイッチング時に該コンデンサから電
荷を11(#することにより、論理回1/’)がスイッ
チングするとぎIpCjfi、源配線に生じも電圧1′
キ下を減少させたことを特徴とする論理集積回路でろ6
゜ 本効果な卯著y、(らしめろためには、核コンデンリ−
1,よ、電漣配、−?系の中でセ、/L系列?等分する
位置に配置することカー必敦であり、(N−1,)商の
コンデンサーにより、セル系列をN等分する。
The present invention resolves this problem, and specifies (・1Vυ
However, in case of special use, due to the generation of noise during switching, the power supply P of the master slice type A capacitor is formed between the picture silk and the contact j'J1 potential 4.11 When the M buried circuit is switched, the charge from the capacitor is 11 (by #, the logic circuit 1/') is switched.IpCjfi, Voltage 1' generated in the source wiring
A logic integrated circuit characterized by reduced power consumption6
゜This effect is good, (for Shimero, nuclear condensation)
1, Yo, Denrensai, -? Se, /L series in the series? It is necessary to arrange the cells at positions where they are divided into equal parts, and the cell series is divided into N equal parts using a (N-1,) quotient capacitor.

寺ル系列か、N等分されることにより、スイッチング時
のノイズは、l/Hに1(ル。
By dividing the series into N equal parts, the noise during switching is reduced to 1/H.

第6図は、本発明を適用した実施例である。FIG. 6 shows an embodiment to which the present invention is applied.

607は本発明の特徴である雷1源電圧供給線と接地電
位供給線どの間に挿入したコンデンサーであり、第6図
に示すようにチップ上の電源配線にセル系列を等分する
ように配置賀する。第7回目、コンデンサ607を一層
金属配線プロセスによって実現した例の構造図を示す。
607 is a capacitor inserted between the lightning 1 source voltage supply line and the ground potential supply line, which is a feature of the present invention, and is arranged so as to equally divide the cell series in the power supply wiring on the chip as shown in Figure 6. celebrate. In the seventh issue, a structural diagram of an example in which a capacitor 607 is realized by a single-layer metal wiring process is shown.

第7図の構造にお(・て、接地電位供給用一層金屈配線
701を容量形成部にお(・てのみ幅を太くし、尚、N
型半導体基板または、ウェルとコンタクトをとる。電源
電圧供給用一層金属配線702は、P型半導体基板また
は、ウェル内の容量形成部に形成したN型拡散層とコン
タクトをとる。本構造のコンデンサーによる客月は、金
属配線701と薄(・絶縁膜706を介した拡散層70
4どの間のMO8容遍1及び、半導体基板703または
ウェルと拡散層704との間の接合容h1の和として得
られる。また、sl’ly 7図において、電源電圧供
給線と接地箪1位供給線を逆にし、P型半導体基板また
は、ウェルをN11llJ生導体基板またはウェルに、
N型拡散層をP型拡計層にしても同様に形成される。多
層金属配線プロセスを用(・れば、容量形成部のみ層間
の絶縁膜を薄くすれば、コンデンサーが実現できる。以
上のようにして形成したコンデンサーに、蓄積された電
荷により、論理回路のスイッチング時の充・放電々流を
供給することにより、論理回路のスイッチング時におけ
る電源配線に生じる電圧降下を減少させることができる
In the structure shown in FIG.
make contact with the type semiconductor substrate or well. The single-layer metal interconnection 702 for supplying power supply voltage makes contact with the P-type semiconductor substrate or the N-type diffusion layer formed in the capacitance forming portion in the well. A capacitor with this structure has a capacitor with a metal wiring 701 and a thin (diffusion layer 70 via an insulating film 706)
4 and the junction capacitance h1 between the semiconductor substrate 703 or the well and the diffusion layer 704. In addition, in Figure 7, the power supply voltage supply line and the ground tank 1 supply line are reversed, and the P-type semiconductor substrate or well is replaced with the N11llJ raw conductor substrate or well.
Even if the N-type diffusion layer is replaced with a P-type expansion layer, it is formed in the same manner. If a multilayer metal wiring process is used, a capacitor can be realized by thinning the insulating film between the layers only in the capacitor forming part. By supplying a charging/discharging current of , it is possible to reduce the voltage drop that occurs in the power supply wiring during switching of the logic circuit.

次に本発明の効果を述べる。本発明の効果は、論理集積
回路において、相補型MO8論理回路にイ(表されるよ
う1ニスイツチング時にのみ電源TE流を多く消費する
論理回路を使用したとき、細(・電源配線を使用しても
電源配線の配線インピーダンスによる電圧降下を生じプ
エ(・ので、電源配線の占有する面積を減少させること
かできる。特に、マスタースライスLSIにお(・て、
マスタースライスLSIは、その性格上、電源配線設計
時(下地設削時)に、論理回路の動作を想定でき1工(
・ので、霜源配紳系に予めコンデンサーを分散して配置
するi、f l−で、πI、源配線の配線インピーダン
スによるノイズから解放されると(・5本発明の効果に
よる利点は、顕名である。
Next, the effects of the present invention will be described. The effect of the present invention is that in a logic integrated circuit, when a logic circuit that consumes a large amount of power TE current only during one switching is used in a complementary MO8 logic circuit, it is possible to reduce the However, the area occupied by the power supply wiring can be reduced because a voltage drop occurs due to the wiring impedance of the power supply wiring.Especially in master slice LSIs,
Due to its nature, the master slice LSI allows the operation of the logic circuit to be assumed when designing the power supply wiring (during groundwork).
・Therefore, by distributing capacitors in advance in the frost source wiring system i, fl−, πI, free from noise due to the wiring impedance of the source wiring (・5 The advantages of the present invention are obvious. It is a name.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、相補型MO8論理回路の出力が、低レベルか
ら、高レベルへ、第2図は、相Hli型MO8論理回路
の出力が高レベルから、低レベル・\J貿移するどきの
動作を各々示して(・る。第3図は、第1図及び第2図
の相補型MO8論狸回路な″1?11略化して示した図
である。第4図は、マスター・スライス方式論理集積回
vj5の栢j伏知、源配紳を第5し1は、第4図の配置
の等価回路を示す。8’rS 6図は、本発明を適用し
た論理集f7+回路の配線を17図は、本発明に使用す
るコンデンサーの檜造断「11図を、第8図は、コンデ
ンサー形成部の141.υiI−配約形状例を示す。 尚、各々の図にお(・て、101・・・・・Pグーヤン
ネル〜1.O8)ランジヌタ、102・・・・・Nチャ
ンネルN08)ランジスタ、103・・・・・・論理回
路信号出力端子、104・・・・・・論理回路信号出力
端子、】05・・・・・狗荷容舞(配線及びトランジス
タ自身の容量)、106・・・・・電腺電圧供給紗、1
07・・・・・接地’lf位供給線、108・・・・・
・負荷容量充電々流軒路、201・・・・・・Pチャン
ネルMO8)ランジスタ、202・・・NチャンネルN
10 S )ランジスタ、203・・・・・儂¥1理回
路信号入力端子、204・・・・・論理回路・信号出力
端子、205・・・・・・負荷古川−1206・・・・
電源′Ft丁。 用供給糾、207・・・・・接11!!電位供給心、2
08・・・負荷容量数11“、々ぴ12β路、401・
・・・・・t:p+I J)−1j ”33績回l酪ベ
レット、402・・・・・・Tie、 n供給線ボンラ
ーインクノくラド、403・・・・・・市、源供給純、
404・・・・・接地′+1.j位供給線ボンゲインク
、パッド、405・・・・・J’jQ Jilt717
位供給紳、40(j・・・・・・信号用ボンティング、
・(ラド、G、、G、〜G、〜GN・・・・・論Jjj
回路、[1・[、=riへ I’N・・・・・・・・・
1す1接する論lip回路間の配線達(杭、501・・
・・・・′r(1於塙子、502・・・・・・接地端子
、(iol・・・本発明な適用した論理年4台回路σ)
ぺ+i:)1・、602・・・・−電源供給線ボンティ
ング・バーット、603・・・・・雷、源仲9給線、6
04・・・・・・接地’IT位(1i、給線ボンティン
グ・)くラド、605・・・・・・接ガ)T電位供Y替
り1.606・・・・・・悄号用71’ンデイング・パ
ッド、607・・・・・f角理回路スイッグング1(ろ
、111源配線市、圧降下防止用コンデンサー、701
・・・・・接地霧位供給用一層金属1斧)a、702・
・・・/、1.、t・−昂圧件給用一層くシ属配綺、7
03・・・・1゛型型半体差−枳または、ウェル、70
4・・・・・N型拡散層、7(+5・・・・・・層間絶
縁膜、70G・・・・−贋′上f形区用の藷(・絶縁+
1!、801・・・・・・接」1に雷1位イ11:給用
一層金札配線、802・−・・・1[蔚電しモ伊、給用
−一層金M配紳、イ)−示し2て(・る。 代理人 弁理士  内 原   y腎 第1 閉 第2図 第3閉 第40 第6閉 第7図 づ02 第 8閏
Figure 1 shows the output of the complementary MO8 logic circuit from low level to high level, and Figure 2 shows the output of the complementary MO8 logic circuit from high level to low level. 3 is a simplified diagram of the complementary MO8 logic circuit of FIGS. 1 and 2. FIG. 4 is a diagram showing the master slice circuit. Figure 5 shows the equivalent circuit of the arrangement shown in Figure 4. Figure 6 shows the wiring of the logic circuit f7+ circuit to which the present invention is applied. Fig. 17 shows the cypress cutting section of the capacitor used in the present invention, and Fig. 8 shows an example of the shape of the capacitor forming part. , 101...P gouyannel ~ 1.O8) Range nut, 102...N channel N08) transistor, 103...Logic circuit signal output terminal, 104...Logic circuit Signal output terminal, 】05... Input capacity (wiring and transistor own capacity), 106... Electric gland voltage supply gauze, 1
07...Ground 'lf supply line, 108...
・Load capacity charging current eaves, 201...P channel MO8) transistor, 202...N channel N
10S) transistor, 203...I\1 logic circuit signal input terminal, 204...logic circuit/signal output terminal, 205...load Furukawa-1206...
Power supply 'Ft. 207...Contact 11! ! Potential supply heart, 2
08...Load capacity number 11", 12 β road, 401.
...t:p+I J)-1j ``33 times L dairy beret, 402...Tie, n supply line Bonra ink no kurado, 403... city, source supply Jun,
404...Ground'+1. J-position supply line Bongaink, pad, 405...J'jQ Jilt717
40 (j...Signal bonding,
・(Rad, G,, G, ~G, ~GN... Theory Jjj
Circuit, [1・[,=ri to I'N・・・・・・・・・
Wiring between 1 and 1 adjacent logic lip circuits (pile, 501...
...'r (1, Hanako, 502... ground terminal, (iol... logic year 4 circuit σ to which the present invention is applied)
Pe+i:) 1., 602...-Power supply line Bonting Bart, 603...Lightning, Minamoto-naka 9 supply line, 6
04...Ground 'IT position (1i, feed line bonding), 605......Contacting) T potential supply Y replacement 1.606...For number 71'nding pad, 607...F angle circuit switching 1 (ro, 111 source wiring city, voltage drop prevention capacitor, 701
... Single-layer metal 1 ax for supplying ground mist level) a, 702.
.../, 1. , t.--more comb genus arrangement for the supply of arousal, 7
03...1゛ type half-body difference - hole or well, 70
4...N-type diffusion layer, 7(+5...Interlayer insulating film, 70G...-Insulation +
1! , 801......connection' 1 to lightning 1st place A 11: supply first layer gold plate wiring, 802...1 Show 2 (・ru. Agent Patent Attorney Uchihara y Kidney No. 1 Closed Figure 2 Closed Figure 3 Closed 40th Closed Figure 7 02 8th Leap

Claims (1)

【特許請求の範囲】[Claims] マスタースライス方式論理集積回路の下地の櫛状電瀝配
線系にお(・て、1蔚電圧供給f♀と接地電位供給線ど
の間にチップ内のセル系列毎に複1:!I飼のコンデン
サーを設け、各セル系列を等分する位置に該コンデンサ
ーを配置したことを特徴とする半導体装内。
In the comb-shaped electrical wiring system underlying the master slice type logic integrated circuit, there is a capacitor of one capacitor for each cell series in the chip between the voltage supply f♀ and the ground potential supply line. An interior of a semiconductor device, characterized in that the capacitor is arranged at a position that equally divides each cell series.
JP57156415A 1982-09-08 1982-09-08 Semiconductor device Pending JPS5946044A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57156415A JPS5946044A (en) 1982-09-08 1982-09-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57156415A JPS5946044A (en) 1982-09-08 1982-09-08 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5946044A true JPS5946044A (en) 1984-03-15

Family

ID=15627246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57156415A Pending JPS5946044A (en) 1982-09-08 1982-09-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5946044A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63245953A (en) * 1987-04-01 1988-10-13 Agency Of Ind Science & Technol Ultrahigh speed integrated circuit
JPH04364775A (en) * 1991-06-12 1992-12-17 Mitsubishi Denki Eng Kk Manufacture of master-slice type analog array
US5393996A (en) * 1993-04-21 1995-02-28 Siemens Aktiengesellschaft Integrated semiconductor configuration
JPH08172175A (en) * 1994-12-19 1996-07-02 Fujitsu Ten Ltd Semiconductor integrated circuit
US5883427A (en) * 1996-09-10 1999-03-16 Mitsubishi Denki Kabushiki Kaisha Semiconductor device power supply wiring structure
WO2004109799A1 (en) * 2003-06-11 2004-12-16 Koninklijke Philips Electronics N.V. Power distribution network of an integrated circuit

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63245953A (en) * 1987-04-01 1988-10-13 Agency Of Ind Science & Technol Ultrahigh speed integrated circuit
JPH04364775A (en) * 1991-06-12 1992-12-17 Mitsubishi Denki Eng Kk Manufacture of master-slice type analog array
US5393996A (en) * 1993-04-21 1995-02-28 Siemens Aktiengesellschaft Integrated semiconductor configuration
JPH08172175A (en) * 1994-12-19 1996-07-02 Fujitsu Ten Ltd Semiconductor integrated circuit
US5883427A (en) * 1996-09-10 1999-03-16 Mitsubishi Denki Kabushiki Kaisha Semiconductor device power supply wiring structure
US6181005B1 (en) 1996-09-10 2001-01-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor device wiring structure
WO2004109799A1 (en) * 2003-06-11 2004-12-16 Koninklijke Philips Electronics N.V. Power distribution network of an integrated circuit
JP2006527498A (en) * 2003-06-11 2006-11-30 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Integrated circuit power distribution network

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