JPS5972152A - Master slice type integrated circuit - Google Patents
Master slice type integrated circuitInfo
- Publication number
- JPS5972152A JPS5972152A JP18231682A JP18231682A JPS5972152A JP S5972152 A JPS5972152 A JP S5972152A JP 18231682 A JP18231682 A JP 18231682A JP 18231682 A JP18231682 A JP 18231682A JP S5972152 A JPS5972152 A JP S5972152A
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- supply
- wirings
- integrated circuit
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 16
- 239000010410 layer Substances 0.000 abstract description 6
- 230000007257 malfunction Effects 0.000 abstract description 4
- 239000011229 interlayer Substances 0.000 abstract description 2
- 239000011159 matrix material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、マスタスライス方式集積回路にかがシ、特に
マスタスライス方式集積回路の改良に関するものである
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements to master slice integrated circuits, and more particularly to improvements in master slice integrated circuits.
一般に、マスタスライス方式集積回路を含む半導体集積
回路においては、電源に重畳する高周波ノイズ(以下、
電源ノイズと呼ぶ)が半導体集積回路チップ(以下チッ
プと呼ぶ)内の論理誤動作の原因になる場合が多い。In general, in semiconductor integrated circuits including master slice integrated circuits, high frequency noise (hereinafter referred to as
Power supply noise (hereinafter referred to as power supply noise) often causes logic malfunctions within semiconductor integrated circuit chips (hereinafter referred to as chips).
上記電源ノイズを防ぐためには1例えば第1図に示すよ
うにコンデンサCe半導体集積回路チップ1の外で、電
源間(例えば集積回路に電源を供給する電源装置の電源
端子とアース端子間)に挿入し電源ノイズの高周波成分
を分流してチップ内部の誤動作を抑えるという処置がな
されることが多い。なお第1図において2と3は電源に
つながるべき外付配線である。しかし上記方法ではチッ
プ内部のある箇所に位置する素子の電気的動作に起因す
る電源電位の変動が、他の箇所に位置する素子に対する
影響を防止する対策となっていない。In order to prevent the above power supply noise, 1 For example, as shown in Figure 1, a capacitor Ce is inserted outside the semiconductor integrated circuit chip 1 between the power supply (for example, between the power terminal and the ground terminal of the power supply device that supplies power to the integrated circuit). However, measures are often taken to shunt the high-frequency components of power supply noise to suppress malfunctions inside the chip. Note that in FIG. 1, 2 and 3 are external wirings that should be connected to a power source. However, the above method does not provide a measure to prevent fluctuations in the power supply potential caused by the electrical operation of elements located at one location inside the chip from affecting elements located at other locations.
本発明は、上記問題点に対処してなされたもので、その
目的は電源ノイズの緩和に対する効果を有スる1スタス
ライス方式集積回路を提供するにある。The present invention has been made to address the above-mentioned problems, and its object is to provide a one star slice type integrated circuit that is effective in alleviating power supply noise.
本発明によるマスタスライス方式集積回路は。A master slice type integrated circuit according to the present invention.
任意の論理機能全有する回路単位全1チツプ上に複数個
備え前記回路単位間の電気的接続を行なうことによって
所望の論理機能を有するようにしたマスタスライス方式
集積回路において、前記回路単位各々に電源を供給する
複数本の電源配線と、前記回路単位各々に前記電源配線
とは異なる電位の電源を供給する複数本の電源配線とを
互いに異なる層に直交する方向に設け、かつ前記2種の
電源配線の交差部にコンデンサを設けたことを特徴とす
るマスタスライス方式集積回路にある。In a master slice type integrated circuit in which a plurality of circuit units having all arbitrary logic functions are provided on one chip and each circuit unit is provided with a desired logic function by electrically connecting the circuit units, each of the circuit units is provided with a power supply. and a plurality of power supply wirings that supply each of the circuit units with a power supply having a different potential from that of the power supply wiring are provided in different layers in a direction orthogonal to each other, and the two types of power supply A master slice integrated circuit is characterized in that a capacitor is provided at the intersection of wires.
以下、実施例に基き本発明の詳細な説明する。Hereinafter, the present invention will be explained in detail based on Examples.
添付図面に示す例について説明する。An example shown in the accompanying drawings will be explained.
第2図は、本発明に依るマスタスライス方式集積回路の
構成金示す説明図である。第2図で鎖線で囲まれた領域
が1つのセルAljを構成し、チップ上に行列状に配列
されている。電源がパッド4及び5から各々櫛目状の電
源配線6(実線)及び7(破線)に延びて、チップ上の
すべてのセルに電源の供給がなされる様に敷設されてい
る。ここで、電源配線6と7は、互に層間絶縁膜によっ
て絶縁され、各セルに異なる電位の電源を供給するもの
とする。本発明は、第2図における電源配線6と7の交
差部にコンデンサを設けることにょフ、電源ノイズの防
止に役立たせようとするものである。第3図は、第2図
のff1s分拡大図であ夛、同一符号は@2図と同様の
ものを表わす。斜線部8がコンデンサ部を表わし、上記
コンデンサはチップ内部の素子の電気的動作に起因する
電源ノイズの高周波成分をチップ内部で分流して、セル
の論理誤動作を防ぐ効果音もつ。即ち、上記コンデンサ
はチップ内部における電源電位の安定化の役割を果たす
。第3図においては、コンデンサ容量を大きくとるため
に、7の電源配線を、電源配線6の交差部で若干太くし
ている。FIG. 2 is an explanatory diagram showing the structure of a master slice type integrated circuit according to the present invention. The region surrounded by a chain line in FIG. 2 constitutes one cell Alj, which is arranged in rows and columns on the chip. Power supplies extend from pads 4 and 5 to comb-like power supply wiring lines 6 (solid lines) and 7 (dashed lines), respectively, and are laid so that power is supplied to all cells on the chip. Here, it is assumed that the power supply wirings 6 and 7 are insulated from each other by an interlayer insulating film, and supply power at different potentials to each cell. The present invention aims to help prevent power supply noise by providing a capacitor at the intersection of power supply lines 6 and 7 in FIG. FIG. 3 is an enlarged view of FIG. 2 by ff1s, and the same reference numerals represent the same parts as in FIG. The shaded area 8 represents a capacitor section, and the capacitor has a sound effect that shunts high frequency components of power supply noise caused by the electrical operation of elements inside the chip to prevent logic malfunctions of the cells. That is, the capacitor plays the role of stabilizing the power supply potential inside the chip. In FIG. 3, the power supply line 7 is made slightly thicker at the intersection with the power supply line 6 in order to increase the capacitance of the capacitor.
次に1本発明に用いられるコンデンサの構造例全第4図
に示す。第4図で、9は半導体基板、10は半導体基板
9と、第1の配線層11とを絶縁するシリコン酸化膜、
12は第1の配線層11と第2の配線層13とを絶縁す
るシリコン酸化膜である。14は通常のフォトリソグラ
フィ技術でパターニングを行ない、エツチングして厚さ
500λ程度に薄くしたシリコン酸化膜である。Next, an example of the structure of a capacitor used in the present invention is shown in FIG. In FIG. 4, 9 is a semiconductor substrate, 10 is a silicon oxide film that insulates the semiconductor substrate 9 and the first wiring layer 11;
Reference numeral 12 denotes a silicon oxide film that insulates the first wiring layer 11 and the second wiring layer 13. Reference numeral 14 is a silicon oxide film which is patterned by ordinary photolithography and etched to a thickness of about 500λ.
一般にマスタスライス方式集積回路は、コンビーータを
用いた自動デザインシステムでセルの自動配置、及びセ
ル間の自動配線全行なっている。Generally, in a master slice type integrated circuit, automatic cell placement and automatic wiring between cells are all performed by an automatic design system using a converter.
このため、如何なるセルの自動配置に対しても回路の信
頼性を満足するために、割合太い電源配線幅を必要とす
るので、第2図の構成をもつマスタスライス集積回路で
は異種電源配線の交差部に割合大きい面積をとることが
でき、第4図の例の如きコンデンサの容量は、比較的大
きくとることができる。Therefore, in order to satisfy the reliability of the circuit for any automatic cell placement, a relatively wide power supply wiring width is required, so in the master slice integrated circuit with the configuration shown in The capacitance of the capacitor, such as the example shown in FIG. 4, can be relatively large.
以上の説明でわかるように、本発明によればマスタスラ
イス方式集積回路の異種重罪配線を、互いに異なる層に
、互いに直交する方向に敷設し、かつ上記異種電源配線
の交差部にコンデンサを設けることによって、電源に重
畳する高周波成分を分流せしめ、よって電源ノイズの緩
和に効果を有するマスタスライス方式集積回路を得るこ
とができる。As can be seen from the above description, according to the present invention, different types of power wiring of a master slice type integrated circuit are laid in mutually different layers in mutually orthogonal directions, and a capacitor is provided at the intersection of the different types of power supply wiring. Accordingly, it is possible to obtain a master slice type integrated circuit that shunts high frequency components superimposed on the power supply, and is therefore effective in alleviating power supply noise.
第1図は電源ノイズに対し従来用いられた緩和法を示す
回路図%第2図は本発明によるマスタスライス方式集積
回路の構成を示す説明図%@3図は第2図の部分拡大図
、第4図は本発明で用いらレルコンデンサの断面図を示
す。
1・・・・・・半導体集積回路チップ、2.3・川・・
外付けの電源配線、4,5・・・・・・電源パッド、6
.7・・・・・・電源配線、8・・・・・・コンデンサ
、9・・・・・・半導体基板、10,12.14・・・
・・シ・ノコン酸化膜、11゜13・・・・・・電源配
線、C・・・・・・コンデンサsA”J・・・・・・セ
ル。
第 7 図 Z 4霞
篤 、3 図
グ
篤 ? 図Figure 1 is a circuit diagram showing a conventional mitigation method for power supply noise. Figure 2 is an explanatory diagram showing the configuration of a master slice integrated circuit according to the present invention. Figure 3 is a partially enlarged view of Figure 2. FIG. 4 shows a cross-sectional view of the Rel capacitor used in the present invention. 1... Semiconductor integrated circuit chip, 2.3. River...
External power wiring, 4, 5...Power pad, 6
.. 7...Power supply wiring, 8...Capacitor, 9...Semiconductor substrate, 10,12.14...
...Silicone oxide film, 11゜13...Power supply wiring, C...Capacitor sA"J...Cell. Fig. 7 Z 4 Atsushi Kasumi, 3 Fig. Atsushi?
Claims (1)
備え、前記回路単位間の電気的接続を行なうことによっ
て所望の論理機能を有するようにしたマスタスライス方
式集積回路において、前記回路単位各々に電源を供給す
る複数本の電源配線と、前記回路単位各々に前記電源配
線とは異なる電位の電源を供給する複数本の電源配線と
を、互いに異なる層に直交する方向に設け、かつ前記2
種の電源配線の交差部にコンデンサを設けたことを特徴
とするマスタスライス方式集積回路。In a master slice type integrated circuit which has a plurality of circuit units each having an arbitrary logic function on one chip and which has a desired logic function by electrically connecting the circuit units, the circuit unit A plurality of power supply wirings supplying power to each of the circuit units, and a plurality of power supply wirings supplying power of a potential different from that of the power supply wiring to each of the circuit units are provided in a direction perpendicular to different layers, and 2
A master slice type integrated circuit characterized by providing a capacitor at the intersection of different power supply wirings.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18231682A JPS5972152A (en) | 1982-10-18 | 1982-10-18 | Master slice type integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18231682A JPS5972152A (en) | 1982-10-18 | 1982-10-18 | Master slice type integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5972152A true JPS5972152A (en) | 1984-04-24 |
Family
ID=16116171
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18231682A Pending JPS5972152A (en) | 1982-10-18 | 1982-10-18 | Master slice type integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5972152A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63158851A (en) * | 1986-12-22 | 1988-07-01 | Nec Corp | Semiconductor integrated circuit device |
JPS63232454A (en) * | 1987-03-20 | 1988-09-28 | Fujitsu Ltd | Semiconductor integrated circuit |
JPH03283459A (en) * | 1990-03-30 | 1991-12-13 | Hitachi Ltd | Semiconductor integrated circuit device |
WO2000067324A1 (en) * | 1999-04-30 | 2000-11-09 | Hitachi, Ltd. | Integrated circuit, method of manufacture thereof, and method of producing mask pattern |
JP2009218577A (en) * | 2008-02-15 | 2009-09-24 | Semiconductor Energy Lab Co Ltd | Protective circuit and display device with it |
-
1982
- 1982-10-18 JP JP18231682A patent/JPS5972152A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63158851A (en) * | 1986-12-22 | 1988-07-01 | Nec Corp | Semiconductor integrated circuit device |
JPS63232454A (en) * | 1987-03-20 | 1988-09-28 | Fujitsu Ltd | Semiconductor integrated circuit |
JPH03283459A (en) * | 1990-03-30 | 1991-12-13 | Hitachi Ltd | Semiconductor integrated circuit device |
WO2000067324A1 (en) * | 1999-04-30 | 2000-11-09 | Hitachi, Ltd. | Integrated circuit, method of manufacture thereof, and method of producing mask pattern |
US7030030B2 (en) | 1999-04-30 | 2006-04-18 | Renasas Technology Corp. | Method of manufacturing a semiconductor integrated circuit device having a plurality of wiring layers and mask-pattern generation method |
JP2009218577A (en) * | 2008-02-15 | 2009-09-24 | Semiconductor Energy Lab Co Ltd | Protective circuit and display device with it |
US8541785B2 (en) | 2008-02-15 | 2013-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
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