JPS5944880A - 発光ダイオ−ド - Google Patents
発光ダイオ−ドInfo
- Publication number
- JPS5944880A JPS5944880A JP58138649A JP13864983A JPS5944880A JP S5944880 A JPS5944880 A JP S5944880A JP 58138649 A JP58138649 A JP 58138649A JP 13864983 A JP13864983 A JP 13864983A JP S5944880 A JPS5944880 A JP S5944880A
- Authority
- JP
- Japan
- Prior art keywords
- doped
- light emitting
- emitting diode
- aluminum
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- 229910052790 beryllium Inorganic materials 0.000 claims description 5
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- SAOPTAQUONRHEV-UHFFFAOYSA-N gold zinc Chemical compound [Zn].[Au] SAOPTAQUONRHEV-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19823228787 DE3228787A1 (de) | 1982-08-02 | 1982-08-02 | Lumineszenzdiode |
| DE32287879 | 1982-08-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5944880A true JPS5944880A (ja) | 1984-03-13 |
Family
ID=6169912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58138649A Pending JPS5944880A (ja) | 1982-08-02 | 1983-07-28 | 発光ダイオ−ド |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS5944880A (de) |
| DE (1) | DE3228787A1 (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05235409A (ja) * | 1992-02-26 | 1993-09-10 | Hitachi Cable Ltd | 半導体光素子、発光ダイオード及びその製造方法 |
-
1982
- 1982-08-02 DE DE19823228787 patent/DE3228787A1/de not_active Withdrawn
-
1983
- 1983-07-28 JP JP58138649A patent/JPS5944880A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05235409A (ja) * | 1992-02-26 | 1993-09-10 | Hitachi Cable Ltd | 半導体光素子、発光ダイオード及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3228787A1 (de) | 1984-02-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5153889A (en) | Semiconductor light emitting device | |
| JP2791448B2 (ja) | 発光ダイオード | |
| US5917201A (en) | Light emitting diode with asymmetrical energy band structure | |
| JP3643665B2 (ja) | 半導体発光素子 | |
| US4864369A (en) | P-side up double heterojunction AlGaAs light-emitting diode | |
| JP3290672B2 (ja) | 半導体発光ダイオード | |
| JPH0738150A (ja) | 半導体発光装置 | |
| JP3251603B2 (ja) | 半導体発光装置 | |
| JP2765256B2 (ja) | 発光ダイオード | |
| JPH1041543A (ja) | 半導体発光素子 | |
| JP2002050790A (ja) | 化合物半導体発光ダイオードアレイ | |
| JP2002237617A (ja) | 半導体発光ダイオード | |
| JPS5944880A (ja) | 発光ダイオ−ド | |
| US6066862A (en) | High brightness light emitting diode | |
| JPH0327577A (ja) | 発光ダイオ―ドアレイ | |
| JP3209786B2 (ja) | 半導体発光素子 | |
| JP2795885B2 (ja) | 半導体発光ダイオード | |
| JP3020542B2 (ja) | 半導体発光装置 | |
| JPH05267715A (ja) | 半導体発光装置 | |
| JPH06103759B2 (ja) | 半導体発光装置 | |
| JP3674410B2 (ja) | 化合物半導体発光素子及び発光ダイオードアレイ | |
| JPH07169992A (ja) | 半導体発光装置 | |
| JPH01295469A (ja) | 発光ダイオード | |
| JP2937439B2 (ja) | 半導体発光装置 | |
| JPS6086879A (ja) | 半導体発光素子の製造方法 |