JPS5943530A - Molding mold for semiconductor resin sealing - Google Patents
Molding mold for semiconductor resin sealingInfo
- Publication number
- JPS5943530A JPS5943530A JP15440982A JP15440982A JPS5943530A JP S5943530 A JPS5943530 A JP S5943530A JP 15440982 A JP15440982 A JP 15440982A JP 15440982 A JP15440982 A JP 15440982A JP S5943530 A JPS5943530 A JP S5943530A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- burr
- lead
- resin
- stopping groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011347 resin Substances 0.000 title claims abstract description 31
- 229920005989 resin Polymers 0.000 title claims abstract description 31
- 238000007789 sealing Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 238000000465 moulding Methods 0.000 title 1
- 230000000452 restraining effect Effects 0.000 claims 1
- 238000004904 shortening Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 3
- 244000046146 Pueraria lobata Species 0.000 description 1
- 235000010575 Pueraria lobata Nutrition 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、半導体（θＪ脂封止月１金型の改良に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement of a semiconductor (θJ fat-sealed mold).
第１図は従来のトランジスタ樹脂：ｌ”ｊ＋１−用下金
型の斜視図である。なお、説明の都合上従来例、実施例
ともｌ・ランジスタ樹脂封止用金型において下金型を例
にとり説明する。第２図は第１図の金型を使用して樹脂
封＋）Ｉ−たトランジスタのが）親図、第３図は第２図
の平面図である。こ１１らの図において、１はトランジ
スタ樹脂封止川下金型のキャビティ部、２はリード溝部
であり、外部引出ｔＶ−ドを案内する部分である。なお
、２ａは内側の各リード溝、２ｂは外側の各リード溝を
示す。３はゲート部であり、ここより樹脂が注入されキ
ャビティ部１に入る。４は半導体の外部引出しｊＪ −
ド、５はｂ１１記外部引出しリード４に発生するパリを
止めるためのパリ止め溝、６は前記下金型のキャビティ
部１と上金型のキャビティ部（図示せずうにより樹脂封
止さ１また樹脂封止部、１はＩ￥＋１紀パリ止め溝５Ｖ
ｃ出１こ厚バリ、８は前記外部引出し、リード４がリー
ド溝部２と接している部分に発生しｆこ薄バリである。FIG. 1 is a perspective view of a conventional lower mold for transistor resin: l"j+1-. For convenience of explanation, both the conventional example and the embodiment use the lower mold as an example of a mold for encapsulating l/transistor resin. Fig. 2 is a parent view of a transistor sealed with resin using the mold shown in Fig. 1, and Fig. 3 is a plan view of Fig. 2. In the figure, 1 is the cavity part of the transistor resin-sealed downstream mold, 2 is the lead groove part, which is a part that guides the external lead tV-do.In addition, 2a is each inner lead groove, and 2b is each outer lead. The groove is shown. 3 is the gate part from which the resin is injected and enters the cavity part 1. 4 is the external drawer of the semiconductor jJ -
Denoted by 5 is a deformation groove for stopping deformation occurring in the external lead 4 described in b11, and denoted by 6 is a cavity part 1 of the lower mold and a cavity part of the upper mold (resin-sealed 1 by means of not shown). In addition, the resin sealing part, 1 is I ¥ + 1 period Paris stopper groove 5V
A thick burr 8 is formed on the external drawer and a portion where the lead 4 contacts the lead groove 2, and a thin burr 8 is formed.
従来の半導体１ｔｊ４脂封止用金型は以上のよ５【て（
ｊり成さｔｌている。以下、この半導体弼脂Ｊ’ｌｌ止
用金型の使用態様について説明する。The conventional semiconductor 1tj4 fat sealing mold is as described above.
It's been a long time since I've been in the middle of a long time. Hereinafter, the manner of use of this semiconductor resin J'll fixing mold will be explained.
リード溝部２に外部引出しリード４をセノトシ、ゲート
部３よりθ−人さ才１−１こ樹脂が下金型のキャビディ
部１および上金型のキヤシー７−イ部番Ｃ入り充填され
る。しかる匠」−ｄｌの」−５に従来の樹脂封止金型で
は外部引出しリ−ｈ’ ４の厚さのばらつきイー゛、金
型のＫＮ ｌｆｆ１により外部引出しり一部４の面と上
。The lead groove 2 is filled with the external lead 4, and the resin is filled from the gate part 3 into the cavity part 1 of the lower mold and the case 7-A part number C of the upper mold. However, in the conventional resin sealing mold, the thickness of the external drawer 4 is uneven, and due to the KNlff1 of the mold, the surface and top of the external drawer part 4 are slightly different.
下金型のリード溝部２との間に間隙が発生し樹脂封止時
、毛π１１管現象等により外部引出しり一部４とυ″−
ド溝２ａと接し”〔いる部分、ｌり樹脂が流出し、大部
分の４６１脂はパリ止めＳ ５ Ｋ流入するが、千−ル
ド条ｆ＋、樹脂特性等の変動により一部の樹脂は毛細管
現象によりリー ド溝２ｂまで流れ、外部引出（２リ−
ド４に付着する。A gap is created between the lead groove part 2 of the lower mold and when sealing with resin, the external drawer part 4 and υ''- due to the capillary π11 tube phenomenon etc.
In the part that is in contact with the door groove 2a, the resin flows out, and most of the 461 resin flows into the stopper S5K, but due to fluctuations in the thousand-hard thread f+, resin properties, etc., some of the resin flows into the capillary tube. Due to this phenomenon, it flows to the lead groove 2b, and the external drawer (2 leads
It adheres to the dome 4.
この付着し、１こへケバリ８の長さし樹脂封止部６端部
からの寸法〕／Ｉ が−ｔ（１１と（２゛ｃブリ／ト基
板ノリさく通常１．５ｍｌ＋１程度であり、以下の説明
υＣおいてはプリント基板厚さが１．５ ｍｍ Ｏ）も
のとして説明する）の１．５ ｍ ｍ以」−にｆ、ｃる
と、はんだ付性を保ｒ（＋ｊる１こめの主便な１−ｉｌ
ｌ ’ｉ’ｆ装因の一つでに１す、多大の労力をかげ除
去しｊ［け才１ばならブｆい。ま１こ、パリ止め溝５に
ηを人しＴこ（＝７バリ７はハリ止め溝５に残存するこ
とがあり、ＪＶバリ１がハＩＪ 、ｄ−め溝５に残存す
１１げ除去しなけｔ’ｔげならず、製造上程の自動化等
Ｋ ｔ、＋いて作！二件の低下となる欠点があつ７ｊ。After this adhesion, the length of the burr 8 and the dimension from the end of the resin sealing part 6]/I is -t(11) and (2゛c/print board paste is usually about 1.5 ml + 1, In the following explanation υC, the printed circuit board thickness is 1.5 mm. The main 1-il
I'd have to spend a great deal of effort to eliminate one of the factors, and if I had the talent, I wouldn't have done it. 1, insert η into the burr groove 5 (= 7 burr 7 may remain in the burr groove 5, remove JV burr 1, remove 11 remaining in d groove 5) We must not give up and automate the manufacturing process, etc. 7j has two drawbacks.
この発明は、上記の欠点を除去−１４）八−め（Ｃなさ
れＴｍもので、パリ止め溝をリードｎゲ」：り探り−（
ることにより毛細管現象等による薄・（りの発生を・少
なくし、ま１−、パリ止め溝に抜勾配を設けることによ
り、パリ１１−め溝の中の厚パリの残存り防１］（る」
、５にしｆこ半導体樹脂封１１す１１金型をＰｔ供−ｔ
（）にとを目的とするものである。以下（）１面を用い
ｒこの発明を説明−する。This invention eliminates the above-mentioned drawbacks.
This reduces the occurrence of thin flakes due to capillary action, etc., and by providing a draft angle in the flashing groove, it prevents thick flakes from remaining in the groove. "ru"
, 5, semiconductor resin sealing 11 and 11 molds were provided with Pt.
The purpose is to (). This invention will be explained below using the first page.
第４図〜第７図はこのシれ明の一実施ＶＩＪを示ゴーも
ので゛、第４図はｌ−ランフ２スタ（・）４脂１ｊ止川
金型の斜視図、第５図は第４図のＡ−Ａ世１・でよる１
０１面図、第６図は第４図のトラ：ｙ）スタ４（）ノ脂
Ｊ’Ｊ 、ｔＬ、 Ｊｔｌ金型を便用し、て１貨４脂」
１止しｆこトラ７ジスタの旧７見し１．第７図は第６図
の外部引出しリードの部分ｌ破断［−Ｔこ１１１１面図
−Ｃある。Figures 4 to 7 show one implementation VIJ of this screening. Figure 4 is a perspective view of the l-lump 2 star (・) 4 fat 1j stop river mold, and Figure 5 is a perspective view of the die. Fig. 4 A-A 1. According to 1.
The 01 side view and Figure 6 are made using the molds shown in Figure 4.
1 stop f Kotora 7 jista's old 7 view 1. FIG. 7 is a partially broken view of the external drawer lead in FIG. 6 [-T].
この発明の実施例における金型の改良し７だハリ止め溝
９の形状は、第４図、第５図に示１−１５にリードｒＰ
１部２より深く、まムコ１抜勾配９ａを設けたものであ
り、寸法は第５図に示すように設定し５八二。すなわ【
）、第５図において、リード溝２ａの上端と・ヤヤヒｉ
イ部１との間の幅〜Ｖ、の寸法が長いと薄バリ８が長く
なり、短いと金型の身命が短くなるため〜Ｖ、＝０．５
ｍｍ＋ パリ止め溝９の上方開口部の幅Ｗ２の寸法は薄
バリ８の長さをｗ２−１．０ｍｍ以下に″「るため０．
５ ｍ ｍ ＋ パリ止め溝９の底部の幅Ｗ、の寸法は
パリ１トめ溝９０両側面に抜勾配９ａを設けるためＷ３
７０．３ ｍｍ 、パリ止め溝９の、トさｔ。の寸法は
、外部引出しリード４の厚みｔｌにｔｌ、 ｌ ｍｍ
？：加えた司法ｔ０＝ ｔ、 ＋０．１ｍｍとしムニ。The shape of the improved mold groove 9 in the embodiment of the present invention is shown in FIGS. 4 and 5, and the lead rP
The part 1 is deeper than the part 2 and has a draft angle 9a of the bulge 1, and the dimensions are set as shown in Fig. 5. Sunawa [
), in Fig. 5, the upper end of the lead groove 2a and the
If the dimension of the width ~V between A part 1 is long, the thin burr 8 will be long, and if it is short, the life of the mold will be shortened, so ~V, = 0.5
mm+ The width W2 of the upper opening of the flash stopper groove 9 is set to 0.0 mm to keep the length of the thin burr 8 below w2-1.0 mm.
The dimension of 5 mm + width W of the bottom of the stopper groove 9 is W3 in order to provide the draft angle 9a on both sides of the stopper groove 90.
70.3 mm, the height of the stopper groove 9. The dimensions are the thickness tl of the external drawer lead 4, tl, l mm
? : Added judicial t0 = t, +0.1mm and muni.
上記の、１５に（］゛ｑ成さ旧１こ金型（ておいては、
リード溝部２に外部引出しり一 ド４を化ノドし、グー
１部３より注入さ１１定樹脂が・１−ヤヒラ・イ部１に
入り充填さ才する。光ｊＩ′ｔさ才１．た４１）Ｊ脂は
リード溝２ａと外部引出しり一部４０間隙から毛細管現
象等によりにじみ出Ｕ７、パリ止め（４９Ｋ流入さ１す
る。パリ止め溝９はリー ドｒＲ部２より深く、外部
引出しリード４どバリ１トめｆｉ’ｔ ９との間隙か大
きいＴ二めパリ１）−め溝９に流入した樹脂けり一 Ｆ
満２５にがＣ５出−することなく、パリ止め？１４９匠
ムーｆ′）て凝固−するので外部引出しリードに刺着す
るパリの長さ／２が１．０ｍｒｎ以下になる。また、パ
リ１（−め溝９匠１こまつｒｓＪｉツバリフもパリ止め
溝９ Ｋ抜勾配９ ａ ％４設（ｔであるＴこめ容易に
外部引出しり一１４υで伺７ｆイ（，５てハリ止め溝９
内にハリが残存しない。In the above, 15 ()
The external drawer 4 is poured into the lead groove 2, and the constant resin injected from the 1st part 3 enters the 1st part 1 and is filled. Light 1. 41) The J fat oozes out from the gap between the lead groove 2a and the external drawer part 40 due to capillary action, etc. U7, and prevents flashing (49K flows in). 4. The gap with the first burr fi't 9 is large. The second burr 1) - The resin that has flowed into the groove 9.
Can you stop Paris without C5 coming out at full 25? 149 Takumi f') and coagulates, so the length/2 of the wire stuck to the external lead is 1.0 mrn or less. In addition, the Paris 1 (-Me groove 9 Takumi 1 Komatsu rs Ji Tsubarifu also has the Paris stop groove 9 K draft angle 9 a % 4 setting (t) and the external drawer 14υ can be easily opened with the external drawer 14υ 7F (,5 Groove 9
There is no firmness left inside.
なｔｒｉ、上記実施例ではトランジスタ＋ｂ＋脂４”Ｊ
ｔｉｔ ｌτついて説明したが、その他の樹１指Ｊづ
重用金型１・（おいても利用できる。In the above example, transistor +b + fat 4"J
Although we have explained about the above-mentioned mold, it can also be used for other heavy-duty molds.
以」二謬明（−１たようＶこの発明は、半導体イタｊ脂
１・１１１−用金型のパリ止め溝の深さをリー ド？７
／／ 、Ｊり深く形成し、ｆｌこ、抜勾配を設けｆ（、
（７じＣ１夕１部引出しリードにイ・１着しムニハリの
長さを従来まり蝮くおさえる。Ｚとができる。ｒＦムニ
、ハリ止め（１１’！にＩ’ｌ 、べりが残存り、、
ｌｘいよ５に除去−する、−とが（きイ）ので、外部引
出し、リードのけんだ（；Ｉけ性が、１： （〕ｊ、す
、かつ製造工程の自動化等において作業性の向上がはか
オｌる利点を４１才る。This invention leads the way in the depth of deburring grooves in molds for semiconductor fabrication 1.111-7
// , J is formed deeply, fl , draft is provided f (,
(I put it on the 1st part drawer lead of 7th C1, and the length of the munihari is kept in check. ,
1: (1: ()) It is possible to remove external drawers and lead wires (1: () and improve workability in automation of manufacturing processes, etc.). Being 41 years old has many advantages.
４ 図面の筒中Ｉ、ｒ説、明
第１図は従来のトランジスタｉ’ｉＪ脂」」土用トー金
型の斜祈１２！１、第２１ソ目ま、第１図の金型を使用
してＦ″１１脂封止しｆ：Ｉう゛／レジスタ斜視図、第
３図は第２図の平面図、第４誠１〜第７図はこの発明の
一実施例を示すもので、第４図はトランジスタ樹脂刊止
用ト金型の斜ｔ＊、 ：ソ１、第５図は第４図のＡ−Ａ
線による断面１ツ）、第６図は第４図の金型を使用して
樹脂封止したトラン）人夕の斜視図、第７図は第６図の
外部引出しリードのｉτへ分ケ破断し１こ側面図である
。4 The cylinders I and R in the drawing, and the light Figure 1, are the conventional transistor i'iJ resin. FIG. 3 is a plan view of FIG. 2, and FIG. 4 shows an embodiment of the present invention. The figure shows the diagonal t* of the mold for sealing the transistor resin.
Figure 6 is a perspective view of a transformer resin-sealed using the mold shown in Figure 4, and Figure 7 is a section of the external drawer lead shown in Figure 6 broken into iτ. It is a side view.
ＩＩχ）中、１け髪−ヤヒフーイ部、２はリード溝部、
３はり’−１・部、４は外部引出シ、リード、６は樹脂
封止部、７は厚パリ、８は薄・・す、９はパリＩＦめｊ
ｉ’／、９ａは抜勾醒、で、？−）る。なお、図中の同
−ｊ３’ ＋４は同−寸ｆ、−（主相当部分を示−［。IIχ) Inside, 1 is the hair-yahihui part, 2 is the lead groove part,
3 beam'-1 part, 4 is external drawer, lead, 6 is resin sealing part, 7 is thick Paris, 8 is thin..., 9 is Paris IF Mej
i'/, 9a is overdraft, and? −). In addition, -j3' +4 in the figure indicates the same - dimension f, -(main equivalent part -[.
代理人 葛 ＋１）ｆ 信 −（外１名ン第１図 第４図 第５図Agent Kuzu +1) f Shin - (1 other person Figure 1) Figure 4 Figure 5
Claims (1)
引出しリードを案内するリード溝部と樹脂を注入するゲ
ート部と前記外部引出しリードに発生する前記樹脂のパ
リを短くするためのパリ止め溝からブｊる半２．す体樹
脂封止用金型において、前記パリ止め溝の深さを前記リ
ード溝部の深さより深くし、また、前記パリ止め溝内に
流入した前記樹脂を除去イる１こめ前記パリ止め１１り
の両側面に抜勾配を設けたことを特徴とする半２１１体
樹脂制止用金型。A cavity part for sealing the semiconductor with resin, a lead groove part for guiding the external lead of the semiconductor, a gate part for injecting the resin, and a flash stopper groove for shortening the resin flash generated in the external lead lead. Ruhan 2. In the resin sealing mold, the depth of the deburring groove is made deeper than the depth of the lead groove, and the detent 11 is removed once the resin that has flowed into the detent groove is removed. A half-211 resin restraining mold characterized by having draft angles on both sides.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15440982A JPS5943530A (en) | 1982-09-02 | 1982-09-02 | Molding mold for semiconductor resin sealing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15440982A JPS5943530A (en) | 1982-09-02 | 1982-09-02 | Molding mold for semiconductor resin sealing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5943530A true JPS5943530A (en) | 1984-03-10 |
Family
ID=15583514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15440982A Pending JPS5943530A (en) | 1982-09-02 | 1982-09-02 | Molding mold for semiconductor resin sealing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5943530A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2667441A1 (en) * | 1990-09-27 | 1992-04-03 | Sgs Thomson Microelectronics | MOLDING PROCESS FOR INTEGRATED AND MOLDED CIRCUIT BOXES. |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS519777A (en) * | 1974-07-09 | 1976-01-26 | Shoichi Takagi | ONPANYORU BISEIBUTSUNO HATSUKO SOKUSHINHO |
| JPS52123874A (en) * | 1976-04-09 | 1977-10-18 | Mitsubishi Electric Corp | Producing device for plastic molded type semiconductor devices |
-
1982
- 1982-09-02 JP JP15440982A patent/JPS5943530A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS519777A (en) * | 1974-07-09 | 1976-01-26 | Shoichi Takagi | ONPANYORU BISEIBUTSUNO HATSUKO SOKUSHINHO |
| JPS52123874A (en) * | 1976-04-09 | 1977-10-18 | Mitsubishi Electric Corp | Producing device for plastic molded type semiconductor devices |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2667441A1 (en) * | 1990-09-27 | 1992-04-03 | Sgs Thomson Microelectronics | MOLDING PROCESS FOR INTEGRATED AND MOLDED CIRCUIT BOXES. |
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