JPS5943439B2 - ２相の液体／固体システムの凝固を制御する方法と装置 - Google Patents

２相の液体／固体システムの凝固を制御する方法と装置

Info

Publication number
JPS5943439B2
JPS5943439B2 JP51068660A JP6866076A JPS5943439B2 JP S5943439 B2 JPS5943439 B2 JP S5943439B2 JP 51068660 A JP51068660 A JP 51068660A JP 6866076 A JP6866076 A JP 6866076A JP S5943439 B2 JPS5943439 B2 JP S5943439B2
Authority
JP
Japan
Prior art keywords
liquid
volume
change
solid
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51068660A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5231984A (en
Inventor
クロード・ポタール
ピエール・ドユセール
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KOMITSUSARIA TA RENERUGII ATOMIIKU
Original Assignee
KOMITSUSARIA TA RENERUGII ATOMIIKU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7518286A external-priority patent/FR2313972A1/fr
Priority claimed from FR7613551A external-priority patent/FR2350134A2/fr
Application filed by KOMITSUSARIA TA RENERUGII ATOMIIKU filed Critical KOMITSUSARIA TA RENERUGII ATOMIIKU
Publication of JPS5231984A publication Critical patent/JPS5231984A/ja
Publication of JPS5943439B2 publication Critical patent/JPS5943439B2/ja
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C55/00—Shaping by stretching, e.g. drawing through a die; Apparatus therefor
    • B29C55/30—Drawing through a die
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C63/00—Lining or sheathing, i.e. applying preformed layers or sheathings of plastics; Apparatus therefor
    • B29C63/0017—Lining or sheathing, i.e. applying preformed layers or sheathings of plastics; Apparatus therefor characterised by the choice of the material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C63/00—Lining or sheathing, i.e. applying preformed layers or sheathings of plastics; Apparatus therefor
    • B29C63/26—Lining or sheathing of internal surfaces
    • B29C63/34—Lining or sheathing of internal surfaces using tubular layers or sheathings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D23/00—Producing tubular articles
    • B29D23/001—Pipes; Pipe joints
    • B29D23/003—Pipe joints, e.g. straight joints
    • B29D23/006—Elbows
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/067—Boots or containers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L58/00—Protection of pipes or pipe fittings against corrosion or incrustation
    • F16L58/02—Protection of pipes or pipe fittings against corrosion or incrustation by means of internal or external coatings
    • F16L58/04—Coatings characterised by the materials used
    • F16L58/10—Coatings characterised by the materials used by rubber or plastics
    • F16L58/1009—Coatings characterised by the materials used by rubber or plastics the coating being placed inside the pipe
    • F16L58/1027—Coatings characterised by the materials used by rubber or plastics the coating being placed inside the pipe the coating being a sprayed layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP51068660A 1975-06-11 1976-06-11 ２相の液体／固体システムの凝固を制御する方法と装置 Expired JPS5943439B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7518286A FR2313972A1 (fr) 1975-06-11 1975-06-11 Procede de controle de la solidification d'un ensemble liquide-solide et dispositif de mise en oeuvre
FR7613551A FR2350134A2 (fr) 1976-05-06 1976-05-06 Procede de controle de la solidification d'un ensemble liquide-solide et dispositif de mise en oeuvre

Publications (2)

Publication Number Publication Date
JPS5231984A JPS5231984A (en) 1977-03-10
JPS5943439B2 true JPS5943439B2 (ja) 1984-10-22

Family

ID=26218909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51068660A Expired JPS5943439B2 (ja) 1975-06-11 1976-06-11 ２相の液体／固体システムの凝固を制御する方法と装置

Country Status (6)

Country Link
US (2) US4096024A (enExample)
JP (1) JPS5943439B2 (enExample)
DE (1) DE2624357A1 (enExample)
DK (1) DK258876A (enExample)
GB (1) GB1546851A (enExample)
NL (1) NL183662C (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57191294A (en) * 1981-05-22 1982-11-25 Hitachi Ltd Automatic epitaxial device of liquid phase
US4567849A (en) * 1981-12-01 1986-02-04 Texas Instruments Incorporated Dipping liquid phase epitaxy for HgCdTe
EP0173764B1 (en) * 1984-08-31 1989-12-13 Gakei Electric Works Co., Ltd. Single crystal growing method and apparatus
US4711697A (en) * 1985-11-21 1987-12-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for investigating the formation of crystals in a transparent material
US5037621A (en) * 1989-11-09 1991-08-06 The United States Of America As Represented By The Secretary Of The Army System for the in-situ visualization of a solid liquid interface during crystal growth
US5248377A (en) * 1989-12-01 1993-09-28 Grumman Aerospace Corporation Crystal-growth furnace for interface curvature control
FR2685483A1 (fr) * 1991-12-23 1993-06-25 Commissariat Energie Atomique Dispositif de solidification d'un materiau conducteur de l'electricite dope et de controle en continu de sa teneur en dopant.
FR2741633B1 (fr) * 1995-11-23 1997-12-19 Commissariat Energie Atomique Four de cristallisation pour materiau a faible conductivite thermique et/ou faible durete
US6003366A (en) * 1997-12-09 1999-12-21 Mcgookin; Hugh R. Liquid level indicating method and system
US6286368B1 (en) * 2000-09-18 2001-09-11 General Electric Company Self-immersing wetting balance
US6871700B2 (en) * 2000-11-17 2005-03-29 G & H Technologies Llc Thermal flux regulator
DE10234250B4 (de) * 2002-07-27 2008-09-25 Deutsche Solar Ag Vorrichtung sowie Verfahren zur Überwachung der Kristallisation von Silizium
DE602004020975D1 (de) * 2003-03-06 2009-06-18 Leco Corp Analytischer ofen mit prädiktiver temperaturregelung
CN100525545C (zh) * 2003-03-06 2009-08-05 莱克公司 具有可预测的温度控制的分析炉
CN101248709A (zh) * 2005-05-18 2008-08-20 哈佛大学 微流体网络中传导通路、微电路和微结构的制造
DE102007017592B4 (de) * 2007-04-13 2011-11-24 Texas Instruments Deutschland Gmbh Verfahren zur Regelung eines Epitaxieaufwachsverfahrens in einem Epitaxiereaktor, Regler und Datenanlysemodul für Epitaxieaufwachsverfahren
CN103764880B (zh) * 2011-08-26 2016-10-26 康萨克公司 利用可消耗电极真空电弧冶炼工艺来精炼类金属
CN113295730B (zh) * 2021-05-25 2022-06-10 中国核动力研究设计院 精细表面单相及两相对流传热传质实验装置及其制备方法
DE102021130133A1 (de) * 2021-11-18 2023-05-25 Hach Lange Gmbh Verfahren zur Ermittlung eines Küvetten-Formkorrekturwertes

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1800532A (en) * 1926-11-05 1931-04-14 Grasselli Chemical Co Hydrometer for liquids
US2135183A (en) * 1933-10-19 1938-11-01 Junghans Siegfried Process for continuous casting of metal rods
US2908004A (en) * 1957-05-10 1959-10-06 Levinson John Temperature control for crystal pulling
GB1113069A (en) * 1964-07-29 1968-05-08 Nat Res Dev Crystalline material
US3459152A (en) * 1964-08-28 1969-08-05 Westinghouse Electric Corp Apparatus for epitaxially producing a layer on a substrate
US3346344A (en) * 1965-07-12 1967-10-10 Bell Telephone Labor Inc Growth of lithium niobate crystals
US3822111A (en) * 1971-02-25 1974-07-02 Sony Corp Apparatus for pulling up semiconductor crystals
US3740563A (en) * 1971-06-25 1973-06-19 Monsanto Co Electroptical system and method for sensing and controlling the diameter and melt level of pulled crystals
US3791887A (en) * 1971-06-28 1974-02-12 Gte Laboratories Inc Liquid-phase epitaxial growth under transient thermal conditions
GB1434527A (en) * 1972-09-08 1976-05-05 Secr Defence Growth of crystalline material
US3859856A (en) * 1973-02-16 1975-01-14 Kay Laboratories Inc Apparatus and method for measuring a temperature
DE2313114A1 (de) * 1973-03-16 1974-09-19 Philips Patentverwaltung Vorrichtung fuer fluessigphasenepitaxie
US3879235A (en) * 1973-06-11 1975-04-22 Massachusetts Inst Technology Method of growing from solution materials exhibiting a peltier effect at the solid-melt interface
US3882319A (en) * 1973-10-23 1975-05-06 Motorola Inc Automatic melt level control for growth of semiconductor crystals
US3892490A (en) * 1974-03-06 1975-07-01 Minolta Camera Kk Monitoring system for coating a substrate
FR2266161A1 (en) * 1974-03-29 1975-10-24 Charbonnages De France Density measuring beam balance - has reference liquid container support engaging support at adjustable point
US3980438A (en) * 1975-08-28 1976-09-14 Arthur D. Little, Inc. Apparatus for forming semiconductor crystals of essentially uniform diameter
US4132186A (en) * 1977-10-31 1979-01-02 Minnesota Mining And Manufacturing Company Freeze indicating device

Also Published As

Publication number Publication date
JPS5231984A (en) 1977-03-10
NL183662B (nl) 1988-07-18
GB1546851A (en) 1979-05-31
DE2624357C2 (enExample) 1988-08-11
NL183662C (nl) 1988-12-16
NL7605887A (nl) 1976-12-14
US4096024A (en) 1978-06-20
DE2624357A1 (de) 1976-12-23
US4197273A (en) 1980-04-08
DK258876A (da) 1976-12-12

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