NL183662B - Werkwijze en inrichting voor het doen groeien van eenkristallen uit een vloeistof-vastestof-stelsel. - Google Patents

Werkwijze en inrichting voor het doen groeien van eenkristallen uit een vloeistof-vastestof-stelsel.

Info

Publication number
NL183662B
NL183662B NLAANVRAGE7605887,A NL7605887A NL183662B NL 183662 B NL183662 B NL 183662B NL 7605887 A NL7605887 A NL 7605887A NL 183662 B NL183662 B NL 183662B
Authority
NL
Netherlands
Prior art keywords
liquid
single crystals
growing single
solid system
solid
Prior art date
Application number
NLAANVRAGE7605887,A
Other languages
English (en)
Other versions
NL7605887A (nl
NL183662C (nl
Inventor
Pierre Dussere
Claude Potard
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7518286A external-priority patent/FR2313972A1/fr
Priority claimed from FR7613551A external-priority patent/FR2350134A2/fr
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Publication of NL7605887A publication Critical patent/NL7605887A/nl
Publication of NL183662B publication Critical patent/NL183662B/nl
Application granted granted Critical
Publication of NL183662C publication Critical patent/NL183662C/nl

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C55/00—Shaping by stretching, e.g. drawing through a die; Apparatus therefor
    • B29C55/30—Drawing through a die
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C63/00—Lining or sheathing, i.e. applying preformed layers or sheathings of plastics; Apparatus therefor
    • B29C63/0017—Lining or sheathing, i.e. applying preformed layers or sheathings of plastics; Apparatus therefor characterised by the choice of the material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C63/00—Lining or sheathing, i.e. applying preformed layers or sheathings of plastics; Apparatus therefor
    • B29C63/26—Lining or sheathing of internal surfaces
    • B29C63/34—Lining or sheathing of internal surfaces using tubular layers or sheathings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D23/00—Producing tubular articles
    • B29D23/001—Pipes; Pipe joints
    • B29D23/003—Pipe joints, e.g. straight joints
    • B29D23/006—Elbows
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/067—Boots or containers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L58/00—Protection of pipes or pipe fittings against corrosion or incrustation
    • F16L58/02—Protection of pipes or pipe fittings against corrosion or incrustation by means of internal or external coatings
    • F16L58/04—Coatings characterised by the materials used
    • F16L58/10—Coatings characterised by the materials used by rubber or plastics
    • F16L58/1009—Coatings characterised by the materials used by rubber or plastics the coating being placed inside the pipe
    • F16L58/1027—Coatings characterised by the materials used by rubber or plastics the coating being placed inside the pipe the coating being a sprayed layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NLAANVRAGE7605887,A 1975-06-11 1976-06-01 Werkwijze en inrichting voor het doen groeien van eenkristallen uit een vloeistof-vastestof-stelsel. NL183662C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7518286A FR2313972A1 (fr) 1975-06-11 1975-06-11 Procede de controle de la solidification d'un ensemble liquide-solide et dispositif de mise en oeuvre
FR7613551A FR2350134A2 (fr) 1976-05-06 1976-05-06 Procede de controle de la solidification d'un ensemble liquide-solide et dispositif de mise en oeuvre

Publications (3)

Publication Number Publication Date
NL7605887A NL7605887A (nl) 1976-12-14
NL183662B true NL183662B (nl) 1988-07-18
NL183662C NL183662C (nl) 1988-12-16

Family

ID=26218909

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7605887,A NL183662C (nl) 1975-06-11 1976-06-01 Werkwijze en inrichting voor het doen groeien van eenkristallen uit een vloeistof-vastestof-stelsel.

Country Status (6)

Country Link
US (2) US4096024A (nl)
JP (1) JPS5943439B2 (nl)
DE (1) DE2624357A1 (nl)
DK (1) DK258876A (nl)
GB (1) GB1546851A (nl)
NL (1) NL183662C (nl)

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JPS57191294A (en) * 1981-05-22 1982-11-25 Hitachi Ltd Automatic epitaxial device of liquid phase
US4567849A (en) * 1981-12-01 1986-02-04 Texas Instruments Incorporated Dipping liquid phase epitaxy for HgCdTe
JPS59225976A (ja) * 1983-06-06 1984-12-19 Nippon Seimitsu Kogyo Kk 印字装置用自動給紙装置
JPS60242083A (ja) * 1984-05-17 1985-12-02 Oki Electric Ind Co Ltd 媒体搬送装置
DE3480721D1 (de) * 1984-08-31 1990-01-18 Gakei Denki Seisakusho Verfahren und vorrichtung zur herstellung von einkristallen.
US4711697A (en) * 1985-11-21 1987-12-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for investigating the formation of crystals in a transparent material
US5037621A (en) * 1989-11-09 1991-08-06 The United States Of America As Represented By The Secretary Of The Army System for the in-situ visualization of a solid liquid interface during crystal growth
US5248377A (en) * 1989-12-01 1993-09-28 Grumman Aerospace Corporation Crystal-growth furnace for interface curvature control
FR2685483A1 (fr) * 1991-12-23 1993-06-25 Commissariat Energie Atomique Dispositif de solidification d'un materiau conducteur de l'electricite dope et de controle en continu de sa teneur en dopant.
FR2741633B1 (fr) * 1995-11-23 1997-12-19 Commissariat Energie Atomique Four de cristallisation pour materiau a faible conductivite thermique et/ou faible durete
US6003366A (en) * 1997-12-09 1999-12-21 Mcgookin; Hugh R. Liquid level indicating method and system
US6286368B1 (en) * 2000-09-18 2001-09-11 General Electric Company Self-immersing wetting balance
US6871700B2 (en) * 2000-11-17 2005-03-29 G & H Technologies Llc Thermal flux regulator
DE10234250B4 (de) * 2002-07-27 2008-09-25 Deutsche Solar Ag Vorrichtung sowie Verfahren zur Überwachung der Kristallisation von Silizium
RU2005130984A (ru) * 2003-03-06 2006-04-10 Леко Корпорейшн (Us) Аналитическая печь с предиктивным контролем температуры
CN100525545C (zh) * 2003-03-06 2009-08-05 莱克公司 具有可预测的温度控制的分析炉
CN101248709A (zh) * 2005-05-18 2008-08-20 哈佛大学 微流体网络中传导通路、微电路和微结构的制造
DE102007017592B4 (de) 2007-04-13 2011-11-24 Texas Instruments Deutschland Gmbh Verfahren zur Regelung eines Epitaxieaufwachsverfahrens in einem Epitaxiereaktor, Regler und Datenanlysemodul für Epitaxieaufwachsverfahren
EP2748355B1 (en) * 2011-08-26 2016-08-10 Consarc Corporation Purification of a metalloid by consumable electrode vacuum arc remelt process
CN113295730B (zh) * 2021-05-25 2022-06-10 中国核动力研究设计院 精细表面单相及两相对流传热传质实验装置及其制备方法

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US1800532A (en) * 1926-11-05 1931-04-14 Grasselli Chemical Co Hydrometer for liquids
US2135183A (en) * 1933-10-19 1938-11-01 Junghans Siegfried Process for continuous casting of metal rods
US2908004A (en) * 1957-05-10 1959-10-06 Levinson John Temperature control for crystal pulling
GB1113069A (en) * 1964-07-29 1968-05-08 Nat Res Dev Crystalline material
US3459152A (en) * 1964-08-28 1969-08-05 Westinghouse Electric Corp Apparatus for epitaxially producing a layer on a substrate
US3346344A (en) * 1965-07-12 1967-10-10 Bell Telephone Labor Inc Growth of lithium niobate crystals
US3822111A (en) * 1971-02-25 1974-07-02 Sony Corp Apparatus for pulling up semiconductor crystals
US3740563A (en) * 1971-06-25 1973-06-19 Monsanto Co Electroptical system and method for sensing and controlling the diameter and melt level of pulled crystals
US3791887A (en) * 1971-06-28 1974-02-12 Gte Laboratories Inc Liquid-phase epitaxial growth under transient thermal conditions
GB1434527A (en) * 1972-09-08 1976-05-05 Secr Defence Growth of crystalline material
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DE2313114A1 (de) * 1973-03-16 1974-09-19 Philips Patentverwaltung Vorrichtung fuer fluessigphasenepitaxie
US3879235A (en) * 1973-06-11 1975-04-22 Massachusetts Inst Technology Method of growing from solution materials exhibiting a peltier effect at the solid-melt interface
US3882319A (en) * 1973-10-23 1975-05-06 Motorola Inc Automatic melt level control for growth of semiconductor crystals
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US4132186A (en) * 1977-10-31 1979-01-02 Minnesota Mining And Manufacturing Company Freeze indicating device

Also Published As

Publication number Publication date
NL7605887A (nl) 1976-12-14
NL183662C (nl) 1988-12-16
DK258876A (da) 1976-12-12
DE2624357C2 (nl) 1988-08-11
JPS5943439B2 (ja) 1984-10-22
US4096024A (en) 1978-06-20
JPS5231984A (en) 1977-03-10
GB1546851A (en) 1979-05-31
DE2624357A1 (de) 1976-12-23
US4197273A (en) 1980-04-08

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Legal Events

Date Code Title Description
BV The patent application has lapsed
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V1 Lapsed because of non-payment of the annual fee