JPS5939712A - パタ−ニングされたシリコン薄膜の製造方法 - Google Patents
パタ−ニングされたシリコン薄膜の製造方法Info
- Publication number
- JPS5939712A JPS5939712A JP14935082A JP14935082A JPS5939712A JP S5939712 A JPS5939712 A JP S5939712A JP 14935082 A JP14935082 A JP 14935082A JP 14935082 A JP14935082 A JP 14935082A JP S5939712 A JPS5939712 A JP S5939712A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- grid
- thin film
- silicon thin
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 39
- 239000010703 silicon Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000013081 microcrystal Substances 0.000 claims abstract description 18
- 239000010409 thin film Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 9
- 239000001257 hydrogen Substances 0.000 abstract description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 6
- 239000002019 doping agent Substances 0.000 abstract description 6
- 229910000077 silane Inorganic materials 0.000 abstract description 6
- 125000005843 halogen group Chemical group 0.000 abstract description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000010790 dilution Methods 0.000 description 4
- 239000012895 dilution Substances 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- -1 input power Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14935082A JPS5939712A (ja) | 1982-08-30 | 1982-08-30 | パタ−ニングされたシリコン薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14935082A JPS5939712A (ja) | 1982-08-30 | 1982-08-30 | パタ−ニングされたシリコン薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5939712A true JPS5939712A (ja) | 1984-03-05 |
| JPS6367554B2 JPS6367554B2 (enrdf_load_stackoverflow) | 1988-12-26 |
Family
ID=15473197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14935082A Granted JPS5939712A (ja) | 1982-08-30 | 1982-08-30 | パタ−ニングされたシリコン薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5939712A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4866006A (en) * | 1985-06-03 | 1989-09-12 | Toyo Boseki Kabushiki Kaisha | Process for producing hydrogenated amorphous silicon film |
-
1982
- 1982-08-30 JP JP14935082A patent/JPS5939712A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4866006A (en) * | 1985-06-03 | 1989-09-12 | Toyo Boseki Kabushiki Kaisha | Process for producing hydrogenated amorphous silicon film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6367554B2 (enrdf_load_stackoverflow) | 1988-12-26 |
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