JPS6367553B2 - - Google Patents

Info

Publication number
JPS6367553B2
JPS6367553B2 JP11478682A JP11478682A JPS6367553B2 JP S6367553 B2 JPS6367553 B2 JP S6367553B2 JP 11478682 A JP11478682 A JP 11478682A JP 11478682 A JP11478682 A JP 11478682A JP S6367553 B2 JPS6367553 B2 JP S6367553B2
Authority
JP
Japan
Prior art keywords
thin film
silicon thin
grid
substrate
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11478682A
Other languages
English (en)
Japanese (ja)
Other versions
JPS598609A (ja
Inventor
Kazunobu Tanaka
Akihisa Matsuda
Keiji Kumagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tonen General Sekiyu KK
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Toa Nenryo Kogyyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Toa Nenryo Kogyyo KK filed Critical Agency of Industrial Science and Technology
Priority to JP11478682A priority Critical patent/JPS598609A/ja
Publication of JPS598609A publication Critical patent/JPS598609A/ja
Publication of JPS6367553B2 publication Critical patent/JPS6367553B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
JP11478682A 1982-07-03 1982-07-03 微結晶を含有するシリコン薄膜及びその製造方法 Granted JPS598609A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11478682A JPS598609A (ja) 1982-07-03 1982-07-03 微結晶を含有するシリコン薄膜及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11478682A JPS598609A (ja) 1982-07-03 1982-07-03 微結晶を含有するシリコン薄膜及びその製造方法

Publications (2)

Publication Number Publication Date
JPS598609A JPS598609A (ja) 1984-01-17
JPS6367553B2 true JPS6367553B2 (enrdf_load_stackoverflow) 1988-12-26

Family

ID=14646643

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11478682A Granted JPS598609A (ja) 1982-07-03 1982-07-03 微結晶を含有するシリコン薄膜及びその製造方法

Country Status (1)

Country Link
JP (1) JPS598609A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61119195U (enrdf_load_stackoverflow) * 1985-01-14 1986-07-28

Also Published As

Publication number Publication date
JPS598609A (ja) 1984-01-17

Similar Documents

Publication Publication Date Title
EP0241317B1 (en) Process for forming deposited film
US4918028A (en) Process for photo-assisted epitaxial growth using remote plasma with in-situ etching
US4942058A (en) Process for forming deposited film
GB2043042A (en) Production of semiconductor bodies made of amorphous silicon
JPH0650730B2 (ja) 半導体薄膜の製造方法
US3291657A (en) Epitaxial method of producing semiconductor members using a support having varyingly doped surface areas
US5135607A (en) Process for forming deposited film
JPS6367553B2 (enrdf_load_stackoverflow)
KR20050084776A (ko) 저저항 n형 반도체 다이아몬드 및 그 제조 방법
JPS6367554B2 (enrdf_load_stackoverflow)
JPS6367555B2 (enrdf_load_stackoverflow)
US5439844A (en) Process for forming deposited film
DE3752203T2 (de) Verfahren zur Herstellung einer niedergeschlagenen kristalliner Schicht
EP0241311B1 (en) Process for forming deposited film
EP0243074B1 (en) Process for forming deposited film
KR20200075992A (ko) 탄화규소 에피웨이퍼 제조방법
JPH0219618B2 (enrdf_load_stackoverflow)
US4869976A (en) Process for preparing semiconductor layer
JPH07315826A (ja) 多結晶シリコン薄膜及びその製造方法
JPH0639688B2 (ja) シリコン薄膜の形成方法
JPS6191010A (ja) 堆積膜形成法
JPS58115020A (ja) アモルフアスシリコン膜の製造方法
JPH0220102B2 (enrdf_load_stackoverflow)
JPH0454945B2 (enrdf_load_stackoverflow)
JPS59229565A (ja) 電子写真用感光体