JPS5939665B2 - Method of forming a solar heat absorption film on the surface of metal foil - Google Patents

Method of forming a solar heat absorption film on the surface of metal foil

Info

Publication number
JPS5939665B2
JPS5939665B2 JP56158159A JP15815981A JPS5939665B2 JP S5939665 B2 JPS5939665 B2 JP S5939665B2 JP 56158159 A JP56158159 A JP 56158159A JP 15815981 A JP15815981 A JP 15815981A JP S5939665 B2 JPS5939665 B2 JP S5939665B2
Authority
JP
Japan
Prior art keywords
metal foil
reel
evaporation
vapor deposition
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56158159A
Other languages
Japanese (ja)
Other versions
JPS5861274A (en
Inventor
芳文 島尻
正隆 佐藤
秀一 室岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP56158159A priority Critical patent/JPS5939665B2/en
Publication of JPS5861274A publication Critical patent/JPS5861274A/en
Publication of JPS5939665B2 publication Critical patent/JPS5939665B2/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02Pretreatment of the material to be coated
    • C23C14/024Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025Metallic sublayers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Description

【発明の詳細な説明】 この発明は金属箔の表面に太陽熱選択吸収皮膜を形成す
る方法に関し、その目的とするところは、太陽光の干渉
作用が小さくて熱吸収率が大きな太陽熱選択吸収皮膜を
短時間でかつ簡単に形成することのできる方法を提供す
ることにある。
[Detailed Description of the Invention] This invention relates to a method for forming a solar heat selective absorption film on the surface of metal foil, and its purpose is to form a solar heat selective absorption film that has a small solar interference effect and a high heat absorption rate. The object of the present invention is to provide a method that can be formed easily and in a short time.

この発明を、以下図面を参照して説明する。This invention will be explained below with reference to the drawings.

第1図において、この発明による方法は、真空槽1内の
上部K、コイル状金属箔2を装着した巻戻戻しリール3
と、巻戻しリール3に装着されたコイル状金属箔2から
金属箔4を巻取る巻取りり−ル5とを同一水平面内でか
つ互いに平行に配置し、巻戻しリール3および巻取りリ
ール5の下方でかつ両リール3,5の間に、金属または
半導体からなる蒸着物質8(以下第1蒸着物質という)
を有する蒸発源6(以下第1蒸発源という)および金属
酸化物からなる蒸着物質9(以下第2蒸着物質という)
を有する蒸発源7(以下第2蒸発源という)を金属箔4
0巻取り方向に所定間隔を置きかつ前者が巻戻しリール
3側にくるように配置し、画然発源6,70間に仕切板
10を配置し、真空中で金属箔4を巻取りリール5に巻
取りながら、金属箔4における2つの蒸着物質8,9の
蒸着範囲が重複しないように、金属箔4に蒸着物質8゜
9を蒸着させることを特徴とするものである。
In FIG. 1, the method according to the invention includes an upper part K in a vacuum chamber 1, an unwinding reel 3 equipped with a coiled metal foil 2;
and a take-up reel 5 for winding the metal foil 4 from the coiled metal foil 2 attached to the unwind reel 3 are arranged in the same horizontal plane and parallel to each other, and the unwind reel 3 and the take-up reel 5 A vapor deposition material 8 (hereinafter referred to as the first vapor deposition material) made of metal or semiconductor is placed below the reels 3 and 5.
an evaporation source 6 (hereinafter referred to as a first evaporation source) having a evaporation source 6 and a evaporation material 9 made of a metal oxide (hereinafter referred to as a second evaporation material)
An evaporation source 7 (hereinafter referred to as a second evaporation source) having a metal foil 4
The metal foil 4 is placed at a predetermined interval in the winding direction and the former is placed on the unwinding reel 3 side, and a partition plate 10 is placed between the metal foil 4 and the unwinding reel 3 in a vacuum. The method is characterized in that the metal foil 4 is evaporated with the evaporation substances 8.9 while the metal foil 4 is being wound around the metal foil 4 so that the evaporation ranges of the two evaporation substances 8 and 9 do not overlap.

金属箔4としては、たとえばアルミニウム箔が用いられ
る。
As the metal foil 4, for example, aluminum foil is used.

画然発源6,7は、それぞれ蒸着物質8,9の他に蒸着
物質8,9を加熱するための電子ビーム加熱装置等を有
する。
The spontaneous emission sources 6 and 7 each have an electron beam heating device and the like for heating the vapor deposition substances 8 and 9 in addition to the vapor deposition substances 8 and 9, respectively.

第1蒸着物質8としては、得られる蒸着層が熱吸収の働
きをするCr 、Ni 、 Fe 、 Co 、 A1
等の金属またはSi、Ge等の半導体が用いられる。
The first vapor deposited substance 8 includes Cr, Ni, Fe, Co, and A1 whose vapor deposited layer acts as a heat absorber.
metals such as Si, Ge, etc. are used.

また、第2蒸着物質9としては、得られる蒸着層が反射
防止効果を有する誘電体層となるCr2O3、Ni2O
3、Al2O3,5in2.SiO等の金属酸化物が用
いられる。
Further, as the second vapor deposition substance 9, Cr2O3, Ni2O, etc., whose vapor deposition layer is a dielectric layer having an antireflection effect, are used.
3, Al2O3, 5in2. Metal oxides such as SiO are used.

仕切板10は、第1蒸発源6の第1蒸着物質8および第
2蒸発源7の第2蒸着物質9の金属箔4における蒸着範
囲が重複することを防止するためのものである。
The partition plate 10 is for preventing the vapor deposition ranges of the first vapor deposition substance 8 of the first vaporization source 6 and the second vapor deposition substance 9 of the second vaporization source 7 from overlapping on the metal foil 4 .

第1蒸着物質8から蒸発した物質は、上方に向って広が
りながら進むが、第2蒸発源7側に広がりながら進む蒸
発物質は、仕切板10に当ってこれに蒸着するので、第
1蒸着物質8は、仕切板10よりも巻戻しリール3側の
範囲aにおいて金属箔4に蒸着する。
The substance evaporated from the first evaporation substance 8 spreads upward, but the evaporation substance that spreads towards the second evaporation source 7 hits the partition plate 10 and evaporates there, so that the first evaporation substance 8 is vapor-deposited on the metal foil 4 in a range a closer to the unwinding reel 3 than the partition plate 10.

他方、第2蒸着物質9から蒸発した物質も、上方に向っ
て広がりながら進むが、第1蒸発源6側に広がりながら
進む蒸発物質は、仕切板10に当ってこれに蒸着するの
で、第2蒸着物質9は、仕切板10よりも巻取りリール
5側の範囲すにおいて金属箔4に蒸着する。
On the other hand, the substance evaporated from the second evaporation substance 9 also spreads upward, but the evaporation substance that spreads and spreads toward the first evaporation source 6 hits the partition plate 10 and is deposited thereon, so that the second evaporation substance 9 The vapor deposition substance 9 is vapor deposited on the metal foil 4 in an area closer to the take-up reel 5 than the partition plate 10 .

したがって、巻戻しリール3に装着されたコイル状金属
箔2から巻取りリール5に巻取られる金属箔4には、ま
ず範囲aにて第1蒸着物質8が蒸着し、ついで範囲すに
て第2蒸着物質9が蒸着する。
Therefore, on the metal foil 4 wound from the coiled metal foil 2 mounted on the unwinding reel 3 to the take-up reel 5, the first vapor deposition substance 8 is first vapor-deposited in the area a, and then the first vapor deposition substance 8 is vapor-deposited in the entire area. A second vapor deposition substance 9 is vapor deposited.

その結果、金属箔40表面には、第2図に示されている
ように、第1蒸着物質8からなる蒸着層11および第2
蒸着物質9からなる蒸着層12を備えた皮膜13が形成
される。
As a result, on the surface of the metal foil 40, as shown in FIG.
A coating 13 is formed with a vapor deposited layer 12 of vapor deposited substance 9.

この皮膜13において蒸着層11は熱吸収の働きをし、
蒸着層12は太陽光の反射防止の働きをするので、皮膜
13は太陽熱選択吸収皮膜として十分な性能を持ったも
のになる。
In this film 13, the vapor deposited layer 11 functions as a heat absorber,
Since the vapor deposited layer 12 functions to prevent reflection of sunlight, the coating 13 has sufficient performance as a solar heat selective absorption coating.

蒸着物質8,9を金属箔4に蒸着させる方法としては、
真空蒸着法、イオンブレーティング法、スパッタリング
法等がある。
The method for depositing the vapor deposition substances 8 and 9 on the metal foil 4 is as follows:
There are vacuum evaporation methods, ion blating methods, sputtering methods, etc.

この発明の方法により得られる太陽熱選択吸収皮膜13
の厚さは0.05μ〜0.2μの範囲内にあることが好
ましく、特に0.1μ程度であることが望ましい。
Solar heat selective absorption film 13 obtained by the method of this invention
The thickness is preferably within the range of 0.05μ to 0.2μ, particularly preferably about 0.1μ.

皮膜13の厚さを0.05〜0.2μの範囲内にする理
由は、0.05μ未満では熱吸収率が十分ではなく、0
.2μを越えると放射率が大きくなって、皮膜13が太
陽熱選択吸収膜として十分な性能を持たないからである
The reason why the thickness of the film 13 is set within the range of 0.05 to 0.2μ is that if it is less than 0.05μ, the heat absorption rate is insufficient;
.. This is because if it exceeds 2 μ, the emissivity increases and the film 13 does not have sufficient performance as a solar heat selective absorption film.

次にこの発明の実施例を示す。Next, examples of this invention will be shown.

真空槽1内の巻戻しリール3には、真空槽1内において
スパッタクリーニング等により前処理が施されて表面の
酸化皮膜が除去されたコイル状アルミニウム箔2が装着
されている。
A coiled aluminum foil 2 is attached to the unwinding reel 3 in the vacuum chamber 1, and the oxide film on the surface thereof has been removed by pretreatment such as sputter cleaning in the vacuum chamber 1.

アルミニウム箔は、厚さ0.1 mm、幅100皿、長
さ20mである。
The aluminum foil has a thickness of 0.1 mm, a width of 100 plates, and a length of 20 m.

また、アルミニウム箔40巻取り面と第1蒸発源6およ
び第2蒸発源7との距離を250皿とするとともに、第
1蒸発源6にCrからなる第1蒸着物質8を、第2蒸発
源7にCr2O3からなる第2蒸着物質9をそれぞれ具
備せしめておく。
Further, the distance between the winding surface of the aluminum foil 40 and the first evaporation source 6 and the second evaporation source 7 is set to 250 plates, and the first evaporation material 8 made of Cr is placed in the first evaporation source 6 and the second evaporation source A second vapor deposition material 9 made of Cr2O3 is provided at 7 and 7, respectively.

そして、巻取りリール5でコイル状アルミニウム箔2か
らアルミニウム箔4を0.3m/minの速度で巻取り
ながら、真空蒸着法によって、30 A /secの速
度で、アルミニウム箔4にCrおよびCr2O3を蒸着
した。
Then, while winding up the aluminum foil 4 from the coiled aluminum foil 2 with the take-up reel 5 at a speed of 0.3 m/min, Cr and Cr2O3 are applied to the aluminum foil 4 at a speed of 30 A/sec by vacuum evaporation. Deposited.

このようにして厚さ0.1μ程度に形成された皮膜13
の太陽エネルギー吸収率は0.92、放射率は0.06
であり、太陽熱選択吸収膜として十分な性能を有する。
The film 13 formed in this way to a thickness of about 0.1μ
The solar energy absorption rate is 0.92, and the emissivity is 0.06.
It has sufficient performance as a solar heat selective absorption film.

上述のように、この発明の方法によれば、真空槽1内を
一旦真空状態にすれば、その真空状態を保ったままでか
つ1度の作業で、金属箔40表面に、金属または半導体
からなる蒸着物質8の蒸着層11および金属酸化物から
なる蒸着物質9の蒸着層12を前者を金属箔4側にして
備えた太陽熱選択吸収皮膜13を形成することができる
As described above, according to the method of the present invention, once the inside of the vacuum chamber 1 is brought into a vacuum state, the surface of the metal foil 40 is coated with metal or semiconductor material while maintaining the vacuum state and in one operation. A solar heat selective absorption film 13 can be formed that includes a vapor deposition layer 11 of vapor deposition material 8 and a vapor deposition layer 12 of vapor deposition material 9 made of a metal oxide, with the former facing the metal foil 4 side.

しかも、その作業を短時間で行うことが可能となる。Moreover, this work can be done in a short time.

また、この発明の方法により形成される太陽熱選択吸収
皮膜13では、金属箔4側の金属または半導体からなる
蒸着層11は熱吸収の働きをし、表面側の金属酸化物か
らなる蒸着層12は太陽光の反射防止の働きをし、しか
も金属箔4側の蒸着層を形成した後真空槽1内の真空状
態を一旦解除して表面側の蒸着層を形成する場合のよう
に2つの蒸着層11,12間に酸化皮膜が形成されてい
ない。
In addition, in the solar heat selective absorption film 13 formed by the method of the present invention, the vapor deposited layer 11 made of metal or semiconductor on the metal foil 4 side acts as a heat absorber, and the vapor deposited layer 12 made of metal oxide on the surface side acts as a heat absorber. It functions to prevent the reflection of sunlight, and moreover, after forming the vapor deposited layer on the metal foil 4 side, the vacuum state in the vacuum chamber 1 is temporarily released to form the vapor deposited layer on the surface side. No oxide film is formed between 11 and 12.

したがって、この太陽熱選択吸収皮膜13は太陽光の干
渉作用が少なくなって熱吸収率が大きくなる。
Therefore, in this solar heat selective absorption film 13, the interference effect of sunlight is reduced and the heat absorption rate is increased.

その上、2つの蒸着層11.12間の密着性が良く、耐
久性が優れている。
Moreover, the adhesion between the two vapor deposited layers 11 and 12 is good, and the durability is excellent.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明の方法を示す説明図、第2図はこの発
明による方法で形成された太陽熱選択吸収皮膜の構造を
示す断面図である。 1・・・真空槽、2・・・コイル状金属箔、3・・・巻
戻しリール、4・・・金属箔、5・・・巻取りリール、
6,7・・・蒸発源、8,9・・・蒸着物質、10・・
・仕切板、13・・・太陽熱選択吸収皮膜。
FIG. 1 is an explanatory diagram showing the method of this invention, and FIG. 2 is a sectional view showing the structure of a solar heat selective absorption film formed by the method according to this invention. DESCRIPTION OF SYMBOLS 1... Vacuum chamber, 2... Coiled metal foil, 3... Unwinding reel, 4... Metal foil, 5... Take-up reel,
6,7... Evaporation source, 8,9... Evaporation substance, 10...
- Partition plate, 13...Solar heat selective absorption film.

Claims (1)

【特許請求の範囲】[Claims] 1 真空槽1内の上部に、コイル状金属箔2を装着した
巻戻しリール3と、巻戻しリール3に装着されたコイル
状金属箔2から金属箔4を巻取る巻取りリール5とを同
一水平面内でかつ互いに平行に配置し、巻戻しリール3
および巻取りリール5の下方でかつ両す−ル3,50間
に、金属または半導体からなる蒸着物質8を有する蒸発
源6および金属酸化物からなる蒸着物質9を有する蒸発
源7を金属箔40巻取り方向に所定間隔を置きかつ前者
が巻戻しリール3側にくるように配置し、画然発源6,
1間に仕切板10を配置し、真空雰囲気において、金属
箔4を巻取りリール5に巻取りながら、仕切板10によ
り金属箔4における画然着物質8,9の蒸着範囲が重複
しないように、金属箔4に蒸着物質8,9を蒸着させる
ことを特徴とする、金属箔の表面に太陽熱選択吸収皮膜
を形成する方法。
1 The unwinding reel 3 on which the coiled metal foil 2 is attached to the upper part of the vacuum chamber 1 and the take-up reel 5 that winds the metal foil 4 from the coiled metal foil 2 attached to the unwinding reel 3 are the same. The unwinding reels 3 are arranged in a horizontal plane and parallel to each other.
Below the take-up reel 5 and between both reels 3 and 50, an evaporation source 6 having an evaporation substance 8 made of a metal or a semiconductor and an evaporation source 7 having an evaporation substance 9 made of a metal oxide are connected to a metal foil 40. They are arranged at a predetermined interval in the winding direction and the former is on the unwinding reel 3 side.
A partition plate 10 is placed between the metal foils 1 and 1, and while the metal foil 4 is being wound onto the take-up reel 5 in a vacuum atmosphere, the partition plate 10 is used to prevent the vapor deposition ranges of the clearly deposited substances 8 and 9 on the metal foil 4 from overlapping. A method for forming a solar heat selective absorption film on the surface of a metal foil, the method comprising depositing vapor deposition substances 8 and 9 on the metal foil 4.
JP56158159A 1981-10-06 1981-10-06 Method of forming a solar heat absorption film on the surface of metal foil Expired JPS5939665B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56158159A JPS5939665B2 (en) 1981-10-06 1981-10-06 Method of forming a solar heat absorption film on the surface of metal foil

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56158159A JPS5939665B2 (en) 1981-10-06 1981-10-06 Method of forming a solar heat absorption film on the surface of metal foil

Publications (2)

Publication Number Publication Date
JPS5861274A JPS5861274A (en) 1983-04-12
JPS5939665B2 true JPS5939665B2 (en) 1984-09-25

Family

ID=15665554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56158159A Expired JPS5939665B2 (en) 1981-10-06 1981-10-06 Method of forming a solar heat absorption film on the surface of metal foil

Country Status (1)

Country Link
JP (1) JPS5939665B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5020650B2 (en) 2007-02-01 2012-09-05 東京エレクトロン株式会社 Vapor deposition apparatus, vapor deposition method, and vapor deposition apparatus manufacturing method

Also Published As

Publication number Publication date
JPS5861274A (en) 1983-04-12

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