JPH02247371A - Continuous vacuum vapor deposition or ion plating method for metal strip featuring pretreatment by means of ion beam irradiation - Google Patents
Continuous vacuum vapor deposition or ion plating method for metal strip featuring pretreatment by means of ion beam irradiationInfo
- Publication number
- JPH02247371A JPH02247371A JP6626089A JP6626089A JPH02247371A JP H02247371 A JPH02247371 A JP H02247371A JP 6626089 A JP6626089 A JP 6626089A JP 6626089 A JP6626089 A JP 6626089A JP H02247371 A JPH02247371 A JP H02247371A
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- metal strip
- vapor deposition
- flux
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 title claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 66
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 42
- 238000007733 ion plating Methods 0.000 title claims description 9
- 238000007740 vapor deposition Methods 0.000 title abstract description 25
- 230000004907 flux Effects 0.000 claims abstract description 22
- 239000011248 coating agent Substances 0.000 claims abstract description 14
- 238000000576 coating method Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 12
- 150000001875 compounds Chemical class 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 6
- 238000001771 vacuum deposition Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 238000011109 contamination Methods 0.000 abstract description 3
- 238000001816 cooling Methods 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 235000010627 Phaseolus vulgaris Nutrition 0.000 abstract 1
- 244000046052 Phaseolus vulgaris Species 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 17
- 239000010949 copper Substances 0.000 description 14
- 230000008021 deposition Effects 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 229910000831 Steel Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000010959 steel Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005275 alloying Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229920000298 Cellophane Polymers 0.000 description 1
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は金属帯を加熱することなしに、連続的に金属帯
に金属または化合物を密着性よく真空蒸着またはイオン
プレーティングする方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for continuously vacuum-depositing or ion-plating a metal or a compound onto a metal strip with good adhesion without heating the metal strip.
従来、走行する金属帯に金属または化合物を真空蒸着ま
たはイオンプレーティングする場合に、その良好な密着
性を得るためには、１）金属帯を蒸着前に電子ビーム、
光などで真空中で加熱し表面のＨ，０などの吸着分子を
熱脱離させ、さらにその熱によって金属帯の表面に存在
する酸化層と蒸着層との間に拡散層をつくる、２）放電
クリーニングなどのように放電室でプラズマによって金
属帯の表面の酸化層を除去した後、蒸着室まで真空中を
搬送し蒸着する、３）イオンビームの照射によって金属
帯の表面の酸化層を除去した後、蒸着室まで真空中を崖
道し蒸着する、ことを行っている。Conventionally, when vacuum depositing or ion plating a metal or a compound onto a moving metal strip, in order to obtain good adhesion, 1) the metal strip is coated with an electron beam,
Heating in vacuum with light etc. causes adsorbed molecules such as H and 0 on the surface to be thermally desorbed, and the heat also creates a diffusion layer between the oxide layer and the vapor deposited layer on the surface of the metal band, 2) After removing the oxide layer on the surface of the metal strip using plasma in a discharge chamber, such as during discharge cleaning, the metal strip is transported in a vacuum to a deposition chamber and deposited.3) The oxide layer on the surface of the metal strip is removed by irradiation with an ion beam. After that, the material is evaporated through a cliff in a vacuum to the deposition chamber.
電子ビーム、光などで金属帯を加熱することによって密
着性を得ようとする場合、蒸着中に蒸着粒子の凝縮熱、
ルツボからの輻射熱、イオンプレーティングの場合には
蒸着粒子の運動エネルギーなどによって金属帯の温度は
蒸着開始初期より上昇する。その金属帯の温度上昇によ
って金属帯と蒸着層界面の合金化、合金化による密着性
の悪化、金属帯および蒸着層の相互の拡散による不純物
元素の増加、金属帯および蒸着層の組織の変化などが生
じる０例えば銅帯にＡｌを蒸着する場合、銅帯を２００
℃以上に加熱すると密着性は良好になるが、銅帯が最終
的に５００℃以上になると合金層の形成により密着性が
低下する。Ａｌ帯にＡＩＮを蒸着する場合、Ａｌ帯が高
温になるとＮがＡｌ帯中に拡散しその機械的特性が劣化
する。When attempting to obtain adhesion by heating the metal strip with an electron beam, light, etc., the heat of condensation of the vapor deposited particles during vapor deposition,
The temperature of the metal band rises from the initial stage of deposition due to radiant heat from the crucible and, in the case of ion plating, kinetic energy of the deposited particles. As the temperature of the metal band increases, the interface between the metal band and the vapor deposited layer becomes alloyed, the adhesion deteriorates due to alloying, the amount of impurity elements increases due to mutual diffusion between the metal band and the vapor deposited layer, and the structure of the metal band and the vapor deposited layer changes. For example, when depositing Al on a copper strip, the copper strip is heated to 200
If the copper strip is heated above 500° C., the adhesion becomes good, but when the copper strip finally reaches 500° C. or above, the adhesion deteriorates due to the formation of an alloy layer. When AIN is vapor-deposited on an Al band, when the temperature of the Al band becomes high, N diffuses into the Al band and its mechanical properties deteriorate.
また、放電クリーニングまたはイオンビームのスパッタ
リング効果によって金属帯の表面の酸化層および汚染層
を除去し清浄化した後蒸着する場合においても、清浄化
後、蒸着室または蒸着部へ金属帯を搬送する間に真空中
の残留ガスの吸着および化合によって表面が酸化および
汚染されるため、結局は密着性を得るために金属帯を加
熱し蒸着開始時の温度を上げなければならない。そのた
め、本質的には上に述べた、金属帯を加熱した後に蒸着
する場合に生じる問題は解決されない。例えば銅帯にＣ
ｕを蒸着する場合、蒸着前に放電クリニングを行っても
鋼帯を３５０℃以上に加熱しないと良好な密着性は得ら
れない。しかし蒸着中に鋼帯の温度が４５０℃以上にな
ると蒸着層のＣｕの再結晶が生じ外観が悪化する。In addition, even when vapor deposition is performed after removing and cleaning the oxidized layer and contaminant layer on the surface of the metal strip by discharge cleaning or the sputtering effect of an ion beam, after cleaning, the metal strip is transported to the vapor deposition chamber or the vapor deposition section. Since the surface is oxidized and contaminated by the adsorption and combination of residual gases in the vacuum, the metal strip must be heated to increase the temperature at the start of deposition in order to obtain adhesion. Essentially, therefore, the problems described above, which arise when the metal strip is heated and then vapor deposited, are not solved. For example, C in a copper band
When depositing u, good adhesion cannot be obtained unless the steel strip is heated to 350° C. or higher even if discharge cleaning is performed before the deposition. However, if the temperature of the steel strip rises to 450° C. or higher during vapor deposition, recrystallization of Cu in the vapor deposited layer occurs, deteriorating the appearance.
蒸着中には上に述べたように必然的に金属；！ＩＦの温
度が上昇することから、以上の問題を解決するためには
蒸着開始時の金属帯の温度を下げることが必要である。As mentioned above, metals are inevitably deposited during vapor deposition; Since the IF temperature increases, in order to solve the above problem, it is necessary to lower the temperature of the metal band at the start of vapor deposition.
本発明は走行する金属帯に金属または化合物を真空蒸着
またはイオンプレーティングする場合、金属帯を加熱す
ることなく良好な密着性を得る製造方法を提供すること
を目的としている。An object of the present invention is to provide a manufacturing method that provides good adhesion without heating the metal strip when a metal or compound is vacuum-deposited or ion-plated onto a moving metal strip.
発明者は、金属帯を真空蒸着またはイオンプレーティン
グする際、金属帯との良好な密着性を得るため高温にす
ると界面の合金化、不純物元素の拡散、金属帯および蒸
着層の組織変化が生ずる問題を解決すべく研究を重ねた
結果、前処理として使用するイオンビームのイオンビー
ム束の前方端部と蒸着蒸気流束の後方端部を重畳するこ
により、金属帯の表面の酸化層および汚染層がイオンビ
ームのスパッタリング効果によって除去され、蒸着時ま
でその清浄化された金属帯の表面に残留ガスが吸着また
は化合することがなく、清浄化されたまま蒸着粒子を蒸
着するこが可能になり、金属帯表面と蒸着粒子すなわち
蒸着層とが直接反応することが可能になり、金属帯が低
温であっても蒸着層と金属帯の密着性が良好になること
を知見した。The inventor discovered that when a metal strip is vacuum-deposited or ion-plated, increasing the temperature to obtain good adhesion with the metal strip causes alloying at the interface, diffusion of impurity elements, and structural changes in the metal strip and the deposited layer. As a result of repeated research to solve the problem, it was found that by overlapping the front end of the ion beam flux of the ion beam used as pretreatment and the rear end of the vapor deposition flux, the oxidation layer and contamination on the surface of the metal strip could be removed. The layer is removed by the sputtering effect of the ion beam, and no residual gas is adsorbed or combined on the surface of the cleaned metal strip until the time of deposition, making it possible to deposit the deposition particles while it is still clean. It has been found that the surface of the metal strip and the vapor deposited particles, that is, the vapor deposition layer, can directly react with each other, and the adhesion between the vapor deposition layer and the metal strip can be improved even when the metal strip is at a low temperature.
本明細書の記載において、前方とは金属帯の走行方向を
意味し、後方とはその反対方向を意味する。In the description of this specification, "front" means the running direction of the metal strip, and "backward" means the opposite direction.
本発明は、連続して走行する金属帯に金属または化合物
を、真空蒸着またはイオンプレーティングによって被覆
する際に、前処理としてイオンビーム照射を用いる方法
において：被覆手段（蒸着層１段またはイオンプレーテ
ィング手段）の後方に近接してイオン源を配置し、被覆
物質流束の後端部とイオンビーム束の前端部とが重畳す
るようにイオンビームを照射する真空蒸着またはイオン
プレーティング方法を提供する。The present invention provides a method using ion beam irradiation as a pretreatment when coating a metal or a compound on a continuously running metal strip by vacuum evaporation or ion plating. Provided is a vacuum evaporation or ion plating method in which an ion source is placed close to the rear of a coating material flux and an ion beam is irradiated so that the rear end of the coating material flux and the front end of the ion beam flux overlap. do.
イオンビームの入射角は任意でよいが、スパッタリング
によるクリーニング効果を高めるため、および、蒸着手
段との干渉を避けるため、入射角は金属帯に対して５６
〜９０°で、４５°〜７５″が望ましい。イオンビーム
としては全ての元素および分子のイオンビームにスパッ
タリングによるクリーング効果が期待できるのでイオン
ビームの種類に制限はない。The incident angle of the ion beam may be arbitrary, but in order to enhance the cleaning effect by sputtering and to avoid interference with the vapor deposition means, the incident angle should be set at 56° with respect to the metal strip.
90 degrees, preferably 45 degrees to 75''.There are no restrictions on the type of ion beam because a cleaning effect due to sputtering can be expected for ion beams of all elements and molecules.
金属帯の表面の酸化層および汚染層がイオンビームのス
パッタリング効果によって除去され、さらにイオンビー
ム束の前端部と被覆物質の流束の後端部が重畳している
ため、蒸着時までその清浄化された金属帯の表面に残留
ガスが吸着または化合することなく、清浄化されたまま
被覆物質を蒸着することが可能になる。このことによっ
て金属帯表面と蒸着物質すなわち蒸着層とが直接反応す
ることが可能になり金属帯が低温であっても蒸着層と金
属帯の密着性が良好になる６
イオンビ一ム束の端部と被覆物質流束の端部が重畳して
いるためイオンビームが蒸着粒子に衝突し金属帯表面に
蒸着粒子がミキシングされる場合がある。本発明ではそ
のようなミキシング効果は全く必要でない。ミキシング
効果が存在するような条件では真空中の残留ガスもミキ
シングされかえって密着性に悪影響を及ぼす場合がある
。Oxide and contamination layers on the surface of the metal strip are removed by the sputtering effect of the ion beam, and since the front end of the ion beam flux and the rear end of the coating material flux overlap, its cleaning is maintained until the time of deposition. The coating material can be deposited on the surface of the cleaned metal strip without adsorption or combination of residual gas on the surface of the cleaned metal strip. This makes it possible for the surface of the metal strip to react directly with the deposited substance, that is, the deposited layer, and the adhesion between the deposited layer and the metal strip is good even when the metal strip is at a low temperature.6 Ends of the ion beam bundle Because the ends of the coating material flux overlap with the ion beam, the ion beam collides with the deposited particles, and the deposited particles may be mixed on the metal band surface. The present invention does not require any such mixing effect. Under conditions where a mixing effect exists, residual gas in vacuum may also be mixed, which may adversely affect adhesion.
本発明を実施例について説明する。 The present invention will be described with reference to examples.
実施例
第１図に本発明を実施するためのイオンビームガンを備
えた金属帯蒸着装置を示す。ペイオフリール（１）から
送り出された金属帯（２）は蒸着室（１０）内に入り、
イオンビームガン（５）よりのイオンビーム束（６）の
照射を受は表面の酸化層および汚染層が除去され、そし
てイオンビーム束（６）とルツボ（８）からの被覆物質
流束（９）による蒸着粒子の重畳部（７）を経て蒸着さ
れ、その後テンションリール（３）に巻きとられる。必
要に応じて金属帯（２）を冷却ロール（４）で冷却する
。蒸着としては１通常の真空蒸着または化合物の蒸着の
ためのイオンプレーティングが適用できる。金属帯（２
）の温度は赤外線放射温度計（１１）により測定する。Embodiment FIG. 1 shows a metal band vapor deposition apparatus equipped with an ion beam gun for carrying out the present invention. The metal strip (2) sent out from the payoff reel (1) enters the deposition chamber (10),
The ion beam flux (6) from the ion beam gun (5) removes the oxidized layer and contaminant layer on the surface, and the ion beam flux (6) and the coating material flux (9) from the crucible (8) are removed. The vapor-deposited particles are vapor-deposited through a superimposed part (7), and then wound onto a tension reel (3). If necessary, the metal strip (2) is cooled with a cooling roll (4). As the vapor deposition, ordinary vacuum vapor deposition or ion plating for compound vapor deposition can be applied. Metal band (2
) is measured by an infrared radiation thermometer (11).
次に銅帯にＣｕを真空蒸着することによってイオンビー
ム束と蒸着粒子束の重畳部の効果を調査した実施例を記
す。Next, an example will be described in which the effect of the superimposed part of the ion beam flux and the deposited particle flux was investigated by vacuum-depositing Cu on a copper strip.
第２図に示す装置によって、銅帯として低炭素鋼を用い
、それを０．２〜６ ｍ／ｗｉｎの速度で走行させ。Using the apparatus shown in FIG. 2, low carbon steel was used as the copper strip, and it was run at a speed of 0.2 to 6 m/win.
イオンビームとしては１０ｅＶのＡｒイオンビームを用
い４５’の角度で照射した。Ｃｕは電子ビーム蒸着によ
って５ Ｘ １０””Ｔｏｒｒの真空中で３μｍに蒸着
した。A 10 eV Ar ion beam was used as the ion beam, and irradiation was performed at an angle of 45'. Cu was deposited to 3 μm by electron beam evaporation in a vacuum of 5×10”” Torr.
重畳部にイオンビームおよび蒸着粒子を遮る遮蔽板（１
２）を２０ｃ朧の間隔をあけて２枚設けてイオンビーム
照射と蒸着の間に全くイオンも蒸着粒子も飛来しない領
域をつくった。イオンおよび蒸着粒子が全く飛来しない
領域を通過する時間、すなわち表面清浄化後蒸着まで真
空中を走行する時間を走行速度を変えることによって変
化させ、その時間と密着性の関係を調べた。第１表に遮
蔽部走行時間、銅帯の走行速度および蒸着直前の鋼帯の
温度を示す。０秒は遮蔽板を取り外し重畳部をつくった
状態を示す。第３図に結果を示す。密着性は鋼板を１８
０°に折り曲げその折り曲げ部にセロハンテープを貼り
それを折り曲げ部から剥して調べ、第２表に示す５段階
の基準で密着性を評価した。第３図から重畳部が存在す
ると鋼帯温度が低温であるにもかかわらず密着性が良好
（密着性５）になることがわかる。従来のイオンビーム
を用いない方法ではＣｕを＃！ｌ帯に蒸着する場合、ｍ
ｓの温度を第４図に示すように３５０℃以上に加熱しな
いと良好な密着性は得られない。この場合、銅帯の走行
速度を６ ｍ／ｗｉｎとし５ Ｘ １０−’Ｔｏｒｒの
真空中で３μｍ蒸着した。A shielding plate (1
Two sheets of 2) were provided with an interval of 20cm apart to create a region where neither ions nor deposition particles would fly between ion beam irradiation and vapor deposition. The relationship between adhesion and time was investigated by varying the travel speed by changing the time it takes for the film to pass through a region where no ions or vapor deposition particles fly, that is, the time it takes to travel in vacuum after surface cleaning until deposition. Table 1 shows the running time of the shield, the running speed of the copper strip, and the temperature of the steel strip immediately before vapor deposition. 0 seconds indicates a state in which the shielding plate is removed and an overlapping portion is created. The results are shown in Figure 3. Adhesion is 18 to steel plate
After bending at 0°, a cellophane tape was applied to the bent portion, and the tape was peeled off from the bent portion and examined. Adhesion was evaluated according to the 5-level criteria shown in Table 2. It can be seen from FIG. 3 that when an overlapping portion exists, the adhesion is good (adhesion 5) even though the steel strip temperature is low. In the conventional method that does not use an ion beam, Cu is #! When depositing in the l band, m
Good adhesion cannot be obtained unless the temperature of s is heated to 350° C. or higher as shown in FIG. In this case, the traveling speed of the copper strip was 6 m/win, and the 3 μm thickness was deposited in a vacuum of 5×10-'Torr.
第１表 第２表 〔発明の効果〕 本発明は以下に記載される効果がある。Table 1 Table 2 〔Effect of the invention〕 The present invention has the effects described below.
真空蒸着あるいはイオンプレーティングの前処理として
使用するイオンビームのイオンビーム束の前端部と蒸着
粒子束の後端部が重畳しているため、イオンビームによ
って清浄化された金属帯の表面は、真空中の残留ガスに
よって酸化あるいは汚染されることなく清浄化されたま
まで蒸着される。そのため密着性を得るために金属帯の
温度を上げる必要がなくなる。The front end of the ion beam bundle used as pretreatment for vacuum evaporation or ion plating overlaps with the rear end of the evaporated particle bundle, so the surface of the metal strip cleaned by the ion beam is It is deposited in a clean state without being oxidized or contaminated by residual gases. Therefore, there is no need to raise the temperature of the metal band in order to obtain adhesion.
このことによって界面の合金化、不純物元素の拡散、金
属帯および蒸着層の組織変化など金属帯が高温となる場
合に生じる問題が解決される。This solves problems that occur when the metal band is heated to high temperatures, such as interfacial alloying, diffusion of impurity elements, and structural changes in the metal band and deposited layer.
第１図はイオンビームガンを備えた金属帯蒸着装置の構
成を示す図、第２図は第１図の装置に２枚の遮蔽板を取
り付けたことを示す図、第３図はイオンビームで清浄化
処理後、蒸着まで真空中を金属帯が走行する時間と蒸着
層と金属帯との間の密着性の関係を示す図、第４図は銅
帯を加熱してＣｕを蒸着した場合の蒸着直前の銅帯温度
と密着性の関係を示す図である。
１・・・ペイオフリール、２・・・金属帯、３・・・テ
ンションリール、４・・・冷却ロール、５・・・イオン
ビームガン、６・・・イオンビーム束、７・・・重畳部
、８・・・ルツボ、９・・・被覆物質束、１０・・・蒸
着室、１１・・・赤外線放射温度計、１２・・・遮蔽板
。Figure 1 shows the configuration of a metal band evaporation device equipped with an ion beam gun, Figure 2 shows the equipment shown in Figure 1 with two shielding plates attached, and Figure 3 shows cleaning with an ion beam. Figure 4 shows the relationship between the adhesion between the vapor deposited layer and the metal strip and the time the metal strip travels in vacuum until vapor deposition after the chemical treatment. FIG. 3 is a diagram showing the relationship between the immediately preceding copper band temperature and adhesion. DESCRIPTION OF SYMBOLS 1... Payoff reel, 2... Metal band, 3... Tension reel, 4... Cooling roll, 5... Ion beam gun, 6... Ion beam bundle, 7... Superimposing part, 8... Crucible, 9... Covering material bundle, 10... Vapor deposition chamber, 11... Infrared radiation thermometer, 12... Shielding plate.
Claims (1)
着またはイオンプレーティングによって被覆する際に、
前処理としてイオンビーム照射を用いる方法において：
被覆手段の後方に近接してイオン源を配置し、被覆物質
流束の後端部とイオンビーム束の前端部とが重畳するよ
うにイオンビームを照射することを特徴とする真空蒸着
またはイオンプレーティング方法。When coating a continuously running metal strip with a metal or compound by vacuum deposition or ion plating,
In a method using ion beam irradiation as pretreatment:
Vacuum deposition or ion spraying, characterized in that an ion source is placed close to the rear of the coating means, and the ion beam is irradiated so that the rear end of the coating material flux and the front end of the ion beam flux overlap. ting method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6626089A JPH0788566B2 (en) | 1989-03-20 | 1989-03-20 | Continuous vacuum deposition or ion plating method on metal strip characterized by performing pretreatment of ion beam irradiation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6626089A JPH0788566B2 (en) | 1989-03-20 | 1989-03-20 | Continuous vacuum deposition or ion plating method on metal strip characterized by performing pretreatment of ion beam irradiation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02247371A true JPH02247371A (en) | 1990-10-03 |
| JPH0788566B2 JPH0788566B2 (en) | 1995-09-27 |
Family
ID=13310712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6626089A Expired - Lifetime JPH0788566B2 (en) | 1989-03-20 | 1989-03-20 | Continuous vacuum deposition or ion plating method on metal strip characterized by performing pretreatment of ion beam irradiation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0788566B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04143276A (en) * | 1990-10-05 | 1992-05-18 | Kobe Steel Ltd | Production of cu alloy plated material by vacuum deposition |
| US5429843A (en) * | 1991-11-21 | 1995-07-04 | Nisshin Steel Co., Ltd. | Vapor deposition for formation of plating layer |
| JPH08239750A (en) * | 1995-02-28 | 1996-09-17 | Chugai Ro Co Ltd | Treatment prior to film formation of sheet composd of copper, aluminum, or their alloy |
| US6294479B1 (en) * | 1992-05-21 | 2001-09-25 | Nissin Electric Co., Ltd | Film forming method and apparatus |
| WO2012133439A1 (en) * | 2011-03-28 | 2012-10-04 | Jx日鉱日石金属株式会社 | Metal foil having electrical resistance layer, and manufacturing method for same |
| KR102135219B1 (en) * | 2020-04-14 | 2020-07-17 | (주)제이에스에스 | Coating system for mask frame with structure of standing road and ion beam |
-
1989
- 1989-03-20 JP JP6626089A patent/JPH0788566B2/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04143276A (en) * | 1990-10-05 | 1992-05-18 | Kobe Steel Ltd | Production of cu alloy plated material by vacuum deposition |
| US5429843A (en) * | 1991-11-21 | 1995-07-04 | Nisshin Steel Co., Ltd. | Vapor deposition for formation of plating layer |
| US6294479B1 (en) * | 1992-05-21 | 2001-09-25 | Nissin Electric Co., Ltd | Film forming method and apparatus |
| JPH08239750A (en) * | 1995-02-28 | 1996-09-17 | Chugai Ro Co Ltd | Treatment prior to film formation of sheet composd of copper, aluminum, or their alloy |
| WO2012133439A1 (en) * | 2011-03-28 | 2012-10-04 | Jx日鉱日石金属株式会社 | Metal foil having electrical resistance layer, and manufacturing method for same |
| US9099229B2 (en) | 2011-03-28 | 2015-08-04 | Jx Nippon Mining & Metals Corporation | Metal foil having electrical resistance layer, and manufacturing method for same |
| KR102135219B1 (en) * | 2020-04-14 | 2020-07-17 | (주)제이에스에스 | Coating system for mask frame with structure of standing road and ion beam |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0788566B2 (en) | 1995-09-27 |
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