JPS5939341A - Apparatus for heat treatment of thin plate shaped object to be treated - Google Patents

Apparatus for heat treatment of thin plate shaped object to be treated

Info

Publication number
JPS5939341A
JPS5939341A JP14858382A JP14858382A JPS5939341A JP S5939341 A JPS5939341 A JP S5939341A JP 14858382 A JP14858382 A JP 14858382A JP 14858382 A JP14858382 A JP 14858382A JP S5939341 A JPS5939341 A JP S5939341A
Authority
JP
Japan
Prior art keywords
chamber
main body
thin plate
heat treatment
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14858382A
Other languages
Japanese (ja)
Other versions
JPH0650756B2 (en
Inventor
Muneo Nakayama
中山 宗雄
Akira Uehara
植原 晃
Hisashi Nakane
中根 久
Isamu Hijikata
土方 勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOKYO DENSHI KAGAKU KABUSHIKI
Tokyo Denshi Kagaku KK
Original Assignee
TOKYO DENSHI KAGAKU KABUSHIKI
Tokyo Denshi Kagaku KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOKYO DENSHI KAGAKU KABUSHIKI, Tokyo Denshi Kagaku KK filed Critical TOKYO DENSHI KAGAKU KABUSHIKI
Priority to JP57148583A priority Critical patent/JPH0650756B2/en
Priority to US06/424,503 priority patent/US4550239A/en
Priority to US06/424,287 priority patent/US4550242A/en
Publication of JPS5939341A publication Critical patent/JPS5939341A/en
Publication of JPH0650756B2 publication Critical patent/JPH0650756B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H01L21/67781Batch transfer of wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/20Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers

Abstract

PURPOSE:To shorten a heat treating time, by a method wherein a chamber is arranged in a main body and a heating member is arranged to the outer periphery of the chamber to perform the automation of heat treatment. CONSTITUTION:A cylindrical plasma generating chamber 2 comprising quartz is arranged in a main body 1 so as to direct the axis of the chamber 2 to a vetical direction. An electrode plate is fixed to the periphery of the chamber 2 while a high frequency power source 4 is arranged in the main body 1 and high frequency waves are applied to generate plasma in the main body 1. In addition, a projected part 5 is integrally formed to the front lower half surface part of the main body 1 and a various kind of buttons 7... are provided to the upper surface of the projected part 5 while casettes 9, 9 capable of accommodating semiconductor wafers 8 being thin plate shaped objects to be treated are arranged to the left and the right parts of the upper surface 6.

Description

【発明の詳細な説明】 本発明は半導体ウニ・・−などを加熱して、CVD(C
hemical Vapor Deposition 
)熱硬化或いは拡散処理を行なう装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention involves heating a semiconductor sea urchin, etc.
chemical vapor deposition
) It relates to an apparatus that performs heat curing or diffusion treatment.

反応室内で予じめ加熱し1こ基板上に膜形成のための元
素を含んだ混合反応ガスを送り込み、基板上の熱化学反
応を利用して所望の膜を形成するようにしたCVDは減
圧状態下、或いはプラズマ状態下で行なわれるようにな
ってきている。このため、最近では内部を減圧に保って
且つプラズマ発生用−0)電極を内部に配したチャンバ
ーの周囲に加熱コイルを巻回した装置が提供されている
In CVD, a mixed reaction gas containing elements for film formation is heated in advance in a reaction chamber and sent onto a substrate, and the desired film is formed using a thermochemical reaction on the substrate.CVD is a low-pressure process. It has come to be carried out under plasma conditions or plasma conditions. For this reason, recently, an apparatus has been provided in which a heating coil is wound around a chamber whose interior is kept at a reduced pressure and in which a -0) electrode for plasma generation is arranged.

しかしながら、従来の装置は基板等の被処理物を1枚ず
つチャンバー内に入れ、加熱処理を行なうようにしてい
るので非能率的であり、処理時間も多(要し、処理後の
チャンバー内が高温となっている場合があるので被処理
相を取り出す際に細心の注意を払わなければならない。
However, conventional equipment is inefficient because it heats the substrates and other objects to be processed one by one into the chamber, and the processing time is long (in short, the inside of the chamber after processing is Since the temperature may be high, extreme care must be taken when removing the phase to be treated.

またこれを自動化して行なう場合には装置自体が大型化
し且つ機構も複雑となる。そのため自動的に加熱処理が
行なえ且つコンパクトな加熱処理装置が望まれている。
Furthermore, if this is done automatically, the device itself will be large and the mechanism will be complicated. Therefore, a compact heat treatment apparatus that can automatically perform heat treatment is desired.

本発明は上記要望に応えるべくなされたものであり、そ
の目的とするところは、手作業によることな(自動的に
多数枚の薄板状被処理物を知時間で加熱処理でき、且つ
コンパクトな加熱処理装置を提供するにある。
The present invention has been made in response to the above-mentioned needs, and its purpose is to automatically heat a large number of thin plate-like objects in a short time without having to do it manually, and to provide a compact heating method. To provide processing equipment.

上記目的を迷惑すべ(本発明に係る加熱処理装置は、装
置本体内にチャンバーを縦方向に配設し、このチャンバ
ーの周囲に高周波誘導加熱コイルなどの加熱部材を設け
、該チャンバーに対して複数の薄板状被処理物を保持し
得る保持体を挿抜可能としたことをその要旨としている
(The heat treatment apparatus according to the present invention has a chamber arranged vertically in the apparatus main body, a heating member such as a high-frequency induction heating coil arranged around the chamber, and a plurality of heating members for the chamber. The gist is that a holder capable of holding a thin plate-shaped object to be processed can be inserted and removed.

以下に本発明の実施例を添付図面に基いて詳述する。Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

第1図は本発明に係る加熱処理装置をプラズマCVD用
の装置として適用した例を示すものであり、略々ボック
ス状をなす装置本体1内には石英からなる円筒状のプラ
ズマ発生用のチャンバー2を縦方向、即ちチャンバー2
の軸が上下方向となるように配設し、このチャンバー2
の上端部を閉塞し、下端部を開口するとともに、外周部
には加熱部材である高周波誘導加熱コイル3を巻回して
いる。そしてチャンバー2の周囲には図示しない電極板
を固定し、本体1内に高周波電源4を配設し、高周波を
印加することでチャンバー2内にプラズマを発生せしめ
るようにしている。
FIG. 1 shows an example in which the heat treatment apparatus according to the present invention is applied as a plasma CVD apparatus. Inside the apparatus main body 1, which is approximately box-shaped, there is a cylindrical plasma generation chamber made of quartz. 2 in the vertical direction, that is, chamber 2
This chamber 2 is arranged so that its axis is in the vertical direction.
The upper end is closed and the lower end is open, and a high frequency induction heating coil 3, which is a heating member, is wound around the outer periphery. An electrode plate (not shown) is fixed around the chamber 2, and a high frequency power source 4 is provided within the main body 1, so that plasma is generated within the chamber 2 by applying high frequency waves.

また、本体1の前面下半部には張り出し部5を一体的に
形成し、この張り出し部5の上面6に各種操作ボタン7
・・・を設けるとともに、上1面6の左右に薄板状の被
処理物である半導体ウェハー8を25枚収納し得る収納
カセット9.9を配設している。
Further, a projecting portion 5 is integrally formed on the lower front half of the main body 1, and various operation buttons 7 are provided on the upper surface 6 of the projecting portion 5.
..., and storage cassettes 9.9 capable of storing 25 semiconductor wafers 8, which are thin plate-shaped objects to be processed, are arranged on the left and right sides of the upper surface 6.

この収納カセット9は第2図の内部構造図にも示すよう
に、アルミ或いはテフロンなどからなる2枚の板体9a
、9aを対向し上端部を棒材10゜10で接続してなり
、板体9aの下端を板状の支持部材11上に載置し、こ
の支持部材11の昇降動につれて収納カセット9が上面
6に形成した孔12を介して張り出し部5に対し昇降動
するようにしている。
As shown in the internal structure diagram in FIG. 2, this storage cassette 9 consists of two plates 9a made of aluminum or Teflon.
, 9a facing each other and their upper ends connected by rods 10° 10.The lower end of the plate body 9a is placed on a plate-shaped support member 11, and as the support member 11 moves up and down, the storage cassette 9 moves upward. It is made to move up and down with respect to the overhanging part 5 through a hole 12 formed in 6.

また上記張り出し部5の上面6には左右方向に伸びる開
口13を形成し、この開口13内に一対の搬送部材であ
る無端ベル)14.14を配設している。この無端ベル
ト14の基部14aは上記収納カセット9の下部に位置
し、夫々の無端ベルト14の先部14bは離間して対向
して騒・る。そして無端ベルト14の上面は張り出し部
5の上面6よりも若干上方に位置し、収納カセット9が
下降した際に最下段のウェハー8が無端ベルト14上に
載るようにしている。
Further, an opening 13 extending in the left-right direction is formed in the upper surface 6 of the projecting portion 5, and a pair of endless bells 14, 14, which are a pair of conveying members, are disposed within this opening 13. The base portion 14a of the endless belt 14 is located below the storage cassette 9, and the tip portions 14b of each endless belt 14 are spaced apart from each other and vibrate in opposition to each other. The upper surface of the endless belt 14 is located slightly above the upper surface 6 of the overhanging portion 5, so that when the storage cassette 9 is lowered, the lowest wafer 8 is placed on the endless belt 14.

また上記開口13の中央から装置本体1内に伸びる関口
15が形成され、この開口15にシリンダユニット16
によって昇降動せしめられる昇降部材170基部を臨ま
せている。この昇降部材17はシリンダユニット16が
引込み動をした場合にはその上面が無端ベルト14の上
面よりも若干下方に位置するようにして(・る。そして
昇降部材17の基部には窓18を形成し、この窓18内
にウェハー8を昇降部材17上に容易に乗り移らすため
のローラ19を設け、更に昇降部材1γの両側には昇降
部月17の基部に乗り移ったウニ・・−を先部に移送す
るための無端ベルト20を設けている。
Further, a sealing port 15 is formed extending from the center of the opening 13 into the apparatus main body 1, and a cylinder unit 16 is formed in this opening 15.
The base of an elevating member 170 that can be moved up and down by the above is exposed. This elevating member 17 is arranged such that its upper surface is located slightly below the upper surface of the endless belt 14 when the cylinder unit 16 is retracted.A window 18 is formed at the base of the elevating member 17. In this window 18, rollers 19 are provided for easily transferring the wafer 8 onto the elevating member 17, and furthermore, on both sides of the elevating member 1γ, the sea urchin that has been transferred to the base of the elevating member 17 is placed first. An endless belt 20 is provided for transporting the materials to other parts.

そしてこの無端ベルト20の外側にはアーム部材21を
設けている。このアーム部材21はその基部の上端から
棒状部21aを延出するとともに基部下端に取り付けた
キャスター22によってガイドレール23上を移動可能
とされている。
An arm member 21 is provided on the outside of the endless belt 20. This arm member 21 has a rod-shaped portion 21a extending from the upper end of its base, and is movable on guide rails 23 by casters 22 attached to the lower end of the base.

一方、本体1の底面には2本のガイド棒24゜24が立
設され、このガイド棒24.24に前記プラズマ発生用
チャンバー2の蓋体25を摺動自在に挿着している。こ
の蓋体25にはネジ部を刻設したロッド26が螺合挿通
され、このロッド26をモータ27で回転せしめること
で、蓋体25がガイド棒24,24に沿って昇降動する
ようにしている。
On the other hand, two guide rods 24.24 are erected on the bottom surface of the main body 1, and the lid 25 of the plasma generation chamber 2 is slidably inserted into the guide rods 24.24. A rod 26 having a threaded portion is threadedly inserted into the lid body 25, and by rotating this rod 26 with a motor 27, the lid body 25 moves up and down along the guide rods 24, 24. There is.

そして、蓋体25の上面にはウニ・・−保持体28を立
設している。この保持体28は4本の柱29・・・とこ
れら柱29・・・の上端部を結合する棒材30・・・と
からなり、保持体28は平面から見て台形をなすように
している。そして上記柱29・・・には上下方向に等間
隔で溝部31・・・を複数(本実施例では50本)穿設
し、この溝部31にウニ・・−8の端部が嵌り込んで係
止するようにしている。
A sea urchin holder 28 is provided upright on the upper surface of the lid 25. The holder 28 is made up of four pillars 29 and a rod 30 that connects the upper ends of these pillars 29, and the holder 28 is shaped like a trapezoid when viewed from above. There is. A plurality of grooves 31 (50 in this embodiment) are bored in the pillars 29 at equal intervals in the vertical direction, and the end of the sea urchin -8 is fitted into the grooves 31. I'm trying to lock it.

以上において、先ず25枚のウェハー8・・・を収納し
た左側のカセット9を若干降下せしめ、カセット9に収
納されているウェハー8・・・のうち最下段に位置する
ウェハーを無端ベルト14上に載せる。するとウェハー
8は無端ベルト14によって昇降部材17上まで送り出
される。このときリミットスイッチによってシリンダユ
ニット16が作動し、昇降部材17が上昇し、無端ベル
ト20によってウニ・・−8が昇降部材17の先端部ま
で搬送される。
In the above process, first, the left cassette 9 containing 25 wafers 8 is lowered slightly, and the lowest wafer among the wafers 8 stored in the cassette 9 is placed on the endless belt 14. I'll put it on. Then, the wafer 8 is sent out onto the lifting member 17 by the endless belt 14. At this time, the cylinder unit 16 is actuated by the limit switch, the elevating member 17 rises, and the endless belt 20 transports the sea urchin...-8 to the tip of the elevating member 17.

そしてウェハー8が昇降部材17の先端部までくるとリ
ミットスイッチにより無端ベルト20の駆動が停止し、
昇降部材17がもとの位置まで下降する。すると、ウエ
ノ・−8はアーム部材21゜21の先端部に乗り移る。
When the wafer 8 reaches the tip of the lifting member 17, the limit switch stops driving the endless belt 20.
The elevating member 17 descends to its original position. Then, Ueno-8 transfers to the tip of the arm member 21°21.

次いでアーム部材21゜21はウエノ・−保持体28に
向って移動し、ウニ・・−を保持体28の柱29に形成
した溝部31に係止せしめる。この場合、保持体28は
最も下った位置とし、最初のウエノ・−8は保持体28
の最上段に保持されるようにする。
Next, the arm member 21.degree. 21 moves toward the Ueno holder 28 and locks the urchin in the groove 31 formed in the column 29 of the holder 28. In this case, the holder 28 is at the lowest position, and the first Ueno-8 is placed on the holder 28.
so that it is kept at the top of the page.

次いでモータ27を駆動して保持体28を一段分、即ち
溝部31の一間隔分だけ上昇せしめる。
Next, the motor 27 is driven to raise the holding body 28 by one step, that is, by one interval of the groove portion 31.

すると、アーム部材21の先端部からウニ・・−8が離
れ、この後アーム部材21はもとの位置まで戻り、装置
は最初の状態になる。
Then, the sea urchin .

この後、左側のカセット9が更に一段分降下し2枚目の
ウエノ・−を送り出し、このウエノ・−を前記同様の操
作で保持体28の2段目の溝部に保持せしめる。そして
この操作を繰り返し、左側のカセット9内のウェハー8
・・・の全て(25枚)を保持体28内に保持せしめた
ら、今度は右側のカセット9についても同様の操作を行
なって合計50枚のウェハー8・・・を保持体28内に
保持せしめる。
Thereafter, the left cassette 9 is further lowered by one stage to feed out the second sheet of ueno, which is held in the groove of the second stage of the holder 28 by the same operation as described above. Then repeat this operation until the wafer 8 in the cassette 9 on the left
After all (25 wafers) of... are held in the holder 28, the same operation is performed for the right cassette 9 to hold a total of 50 wafers 8... in the holder 28. .

次いで、モータ27を駆動して保持体28をチャンバー
2内に収納するとともに蓋体25によってチャンバー2
の下端開口部を塞ぐ。この後、高周波電源4によってチ
ャンバー2内にプラズマを発生せしめるとともに、高周
波誘導加熱コイル3によって被処理物であるウェハー8
にプラズマCVD処理を行なう。
Next, the motor 27 is driven to house the holder 28 in the chamber 2, and the lid 25 closes the chamber 2.
Close the bottom opening. Thereafter, plasma is generated in the chamber 2 by the high frequency power source 4, and the wafer 8, which is the object to be processed, is heated by the high frequency induction heating coil 3.
Then, plasma CVD treatment is performed.

この後、前記した操作と逆の操作によってチャンバー2
内で処理したウエノ・−8・・・をカセット9内に一枚
ずつ戻す。
After this, the chamber 2 is
The processed ueno-8... is returned to the cassette 9 one by one.

第3図乃至第6図は別実施例を示すものであり、前記実
施例と同一の部材については同一の番号を付している。
3 to 6 show another embodiment, and the same members as in the previous embodiment are given the same numbers.

即ち装置本体1内には縦方向にチャンバー2を配設し5
、このチャンバー2の周囲に高周波誘導加熱コイル3を
巻回している。そして本体1内には高周波電源4を設は
電極板を弁してチャンノ(−2内にプラズマを発生せし
めるようにしている。
That is, a chamber 2 is arranged in the vertical direction in the main body 1 of the apparatus.
A high frequency induction heating coil 3 is wound around the chamber 2. A high-frequency power source 4 is installed in the main body 1, and an electrode plate is operated to generate plasma within the channel (-2).

また本体1の前面には張り出し部5を形成するとともに
、本体1の内部には支持板32を固着し、この支持板3
2の上下端にブラケット33.33を取付け、これらブ
ラケット33.33間にネジ部を形成したロッド34を
モータによって回転せしめられるように支持している。
Further, a projecting portion 5 is formed on the front surface of the main body 1, and a support plate 32 is fixed to the inside of the main body 1.
Brackets 33, 33 are attached to the upper and lower ends of 2, and a rod 34 having a threaded portion formed between these brackets 33, 33 is supported so as to be rotated by a motor.

そして、上記ロッド34に支持台35を螺合し、ロッド
34の回転によって支持台J5が図示しない案内ロッド
に沿って昇降動するようにしている。そして支持台35
には前記実施例と同様の蓋体25が設けられており、こ
の蓋体25の上面にウニ・・−の保持体28が立設され
ている。
A support stand 35 is screwed onto the rod 34, and as the rod 34 rotates, the support stand J5 moves up and down along a guide rod (not shown). and support stand 35
A lid body 25 similar to that of the previous embodiment is provided, and a holder 28 for sea urchins is erected on the upper surface of this lid body 25.

また、本体1内の中央には横方向に支持板36を架設し
、この支持板36の上面左右に一対の回転板37.37
を設け、この回転板37.37の先端にウエノ・−収納
用のカセット9を載置するようにしている。
In addition, a support plate 36 is horizontally installed in the center of the main body 1, and a pair of rotary plates 37, 37 are provided on the left and right sides of the upper surface of the support plate 36.
A cassette 9 for storing Ueno is placed on the tip of the rotary plate 37.37.

そして回転板37の下方に、&工移し換え音す材38を
配設している。この移し換え部材38&工第4図及び第
5図に示す如く、アングル片390つ起立音b39aの
裏面に多数の先端二股状となった舌状片40・・・ン上
下方向に連続的に取り付けており、該アングル片390
基部を本体1内に自己設したシ1ノンダニニット410
ロッド42に固着して(する。
And, below the rotary plate 37, a sounding material 38 is arranged. As shown in FIGS. 4 and 5, the transfer member 38 & The angle piece 390
SI 1 non-dani knit 410 with the base self-installed inside the main body 1
Fix it to the rod 42.

一方シリンダユニット41は本体1内の前後方+oJに
架設された案内ロッド43.43に摺動自在に挿通した
支持台44に固設され、こσ)支持台44ヲシリンダユ
ニツト45で案内、oツ)’43.43に沿って移動せ
しめるようにして(する。而して、移し換え部材38は
シリンダユニット41σ)作動で昇降動し、シリンダユ
ニット45のイ/「動でiiJ後動するようになってい
る。
On the other hand, the cylinder unit 41 is fixed to a support stand 44 which is slidably inserted into guide rods 43 and 43 installed in the front and back +oJ in the main body 1, and the support stand 44 is guided by the cylinder unit 45, o T) The transfer member 38 is moved up and down by the operation of the cylinder unit 41σ, and moved backward by the movement of the cylinder unit 45. It has become.

以上において、ウニ、−、8・’Y収納した−)Jセッ
ト9ヶカセット9の板体9a力(本体1の=1面と平行
となるようにして回転板37上に載置して第4図の状態
とする。次いでモータを駆動してロット。
In the above, the plate 9a of the cassette 9 with 9 J sets (-, 8・'Y housed -) is placed on the rotary plate 37 so as to be parallel to the =1 plane of the main body 1, and the 4th The state is as shown in the figure.Next, drive the motor and make a lot.

34を回転し、支持台35、蓋体25及び保持体28を
一体的に降下せしめ最下端に位置せしめる。
34 is rotated, and the support base 35, the lid body 25, and the holding body 28 are lowered together and positioned at the lowest end.

そしてこれと同時に一方の回転板37を約90°回転せ
しめ、カセット9を保持体28の上部近傍に位置せしめ
る。
At the same time, one rotary plate 37 is rotated approximately 90 degrees to position the cassette 9 near the upper part of the holder 28.

次いでシリンダユニット41を作動して移し換え部材3
8を上昇せしめ、移し換え部材38の舌状片40・・・
の夫々がカセット9内に収納したウェハー8・・・の中
間に位置する高さで停止する。この状態を第6図で示し
ている。
Next, the cylinder unit 41 is operated to transfer the transfer member 3.
8, and the tongue-shaped piece 40 of the transfer member 38...
each stops at a height located between the wafers 8 stored in the cassette 9. This state is shown in FIG.

次いでシリンダユニット45を作動せしめて移し換え部
材を図中右方へ移動せしめる。すると、各舌状片40・
・・はウエノ・−8・・・の間に挿入されることとなる
。そしてこの状態となった時点でシリンダ45の作動を
停止し、シリンダユニット41を再度作動し、移し換え
部材38を若干上昇せしめる。すると、舌状片40・・
・がカセット9内のウニ・・−8・・・を持ち上げるこ
ととなる。
Next, the cylinder unit 45 is activated to move the transfer member to the right in the figure. Then, each tongue-like piece 40・
... will be inserted between Ueno -8.... When this state is reached, the operation of the cylinder 45 is stopped, the cylinder unit 41 is operated again, and the transfer member 38 is slightly raised. Then, the tongue-like piece 40...
・will lift up the sea urchin...-8... in the cassette 9.

そして、舌状片40・・・上にウエノ・−8・・・が載
置されたならば、シリンダユニット41の作動を停止し
、再度シリンダユニット45を作動せしめる。
Then, once Ueno-8 is placed on the tongue-shaped piece 40, the operation of the cylinder unit 41 is stopped, and the cylinder unit 45 is activated again.

すると、ウニ・・−8・・・は移し換え部材38によっ
て保持体28内に送られ、保持体28の柱29に形成し
た溝部31内にウェハー8の端部が嵌り込み、複数(例
えば25枚)のウニ・・−8・・・は同時に保持体28
に係止されることとなる。この後シlJyダニニット4
1.45v作動せしめることで移し換え部材38を元の
位置に戻す。そして、上記と同様の操作を他方の回転板
37上に載置したカセット9内のウェハーにも行なうこ
とで、保持体28内にカセット2個分(例えば50枚)
のウェハー8を保持せしめる。
Then, the sea urchins... Sea urchins...-8... are held by the holding body 28 at the same time.
It will be locked in. After this ShilJy Dani Knit 4
By activating 1.45V, the transfer member 38 is returned to its original position. Then, by performing the same operation as above on the wafers in the cassette 9 placed on the other rotary plate 37, two cassettes (for example, 50 wafers) are stored in the holder 28.
The wafer 8 is held.

この状態から更にロッド34Y回転せしめ、蓋体25が
チャンバー2の下端開口部を塞ぐまで支持台35を上昇
せしめる−これにより保持体28はウェハー8を保持し
た状態で密閉状態のチャンバー2内に装填されることと
なる。
From this state, the rod 34Y is further rotated, and the support base 35 is raised until the lid 25 closes the lower end opening of the chamber 2.The holder 28 is thereby loaded into the sealed chamber 2 while holding the wafer 8. It will be done.

斯る状態にて高周波電源4によってチャンバー2内にプ
ラズマを発生せしめ且つ高周波誘導コイル3によって、
チャンバー2内のウエノ・−8にプラズマCVD処理を
行なう。
In this state, plasma is generated in the chamber 2 by the high frequency power supply 4, and by the high frequency induction coil 3,
Ueno-8 in chamber 2 is subjected to plasma CVD treatment.

そして斯る処理が終了したならば、前記と逆の操作によ
り、チャンバー2内のウェハー8を半分ずつカセット9
内に戻して処理が完了する。
Once this process has been completed, half of the wafers 8 in the chamber 2 are transferred to the cassette 9 by the reverse operation.
The process is complete.

尚、以上に示したものは本発明の実施の一例に過キス、
チャンバー2の周囲に巻回する加熱部材は高周波誘導加
熱コイルに限らず、抵抗加熱コイル或いは加熱ランプ等
を配設してもよい。また実施例にあってはプラズマCV
D処理用として本発明に係る装置7示したが、本発明に
係る装置は薄板状の被処理物に熱硬化処理或いは拡散処
理する一合にも用いることができるのは勿論である。
It should be noted that what has been shown above is merely an example of the implementation of the present invention.
The heating member wound around the chamber 2 is not limited to a high frequency induction heating coil, but may also be a resistance heating coil, a heating lamp, or the like. In addition, in the embodiment, plasma CV
Although the apparatus 7 according to the present invention is shown for the D treatment, it goes without saying that the apparatus according to the present invention can also be used for thermosetting or diffusion treatment of a thin plate-shaped workpiece.

以上の説明で明らかな如く本発明によれば、チャンバー
を縦方向に配置するようにしたので、コンパクト化が図
れ、またチャンバー内で多数枚の被処理物を同時に処理
するようにしたので、処理時間を大巾に短縮することが
でき、更に被処理物の保持体への被処理物の送り、及び
取り出し等を自動的に行なうようにしたので、従来の手
作業に比べ作業能率が向上するとともに被処理物を傷付
けるおそれも少なくなり、製品歩留りも大巾に向上する
等多くの効果を発揮する。
As is clear from the above description, according to the present invention, since the chamber is arranged vertically, it is possible to achieve compactness, and since a large number of objects to be processed can be processed simultaneously in the chamber, the processing The time can be greatly shortened, and the work efficiency is improved compared to conventional manual work since the workpieces are automatically fed to and taken out from the workpiece holder. At the same time, the risk of damaging the object to be processed is reduced, and the product yield is greatly improved, among other effects.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は本発明の実施例を示すものであり、第1図は本発
明に係る加熱処理装置の概略構造を示す斜視図、第2図
は同加熱処理装置の内部構造を示す斜視図、第3図は別
実施例の正面図、第4図は同別実施例の内部構造を示す
側面図、第5図は移し換え部材の斜視図、第6図は同別
実施例の作用を説明した側面図である。 尚、図面中1は装置本体、2はチャンノ(−13は加熱
部材、8は薄板状被処理物、28は保持体である。 特許出願人 東京電子化学株式会社 代理人 弁理士   下  1) 容一部間  弁理士
   大  橋   邦  産量  弁理士   小 
 山      有第2図 第4図 ノ
The drawings show embodiments of the present invention, and FIG. 1 is a perspective view showing a schematic structure of a heat treatment apparatus according to the present invention, FIG. 2 is a perspective view showing the internal structure of the heat treatment apparatus, and FIG. The figure is a front view of another embodiment, FIG. 4 is a side view showing the internal structure of the same embodiment, FIG. 5 is a perspective view of the transfer member, and FIG. 6 is a side view explaining the operation of the same embodiment. It is a diagram. In the drawings, 1 is the main body of the apparatus, 2 is the channo (-13 is the heating member, 8 is the thin plate-shaped object to be processed, and 28 is the holding body. Patent applicant: Tokyo Denshi Kagaku Co., Ltd., agent, patent attorney, 2) Partial Patent Attorney Kuni Ohashi Production Volume Patent Attorney Kuni
Yama Yu Figure 2 Figure 4 No.

Claims (1)

【特許請求の範囲】[Claims] 装置本体内に縦方向に配置されたチャンバーと、このチ
ャンバーの外周に配設された加熱部材と、複数の薄板状
被処理物を保持し得るとともに上記チャンバー内に挿抜
可能とされた保持体とを備えてなる薄板状被処理物の加
熱処理装置。
A chamber arranged vertically within the apparatus main body, a heating member arranged around the outer periphery of the chamber, and a holder capable of holding a plurality of thin plate-shaped objects to be processed and capable of being inserted into and removed from the chamber. A heat treatment apparatus for a thin plate-shaped object, comprising:
JP57148583A 1981-10-05 1982-08-27 Heat treatment equipment for thin plate Expired - Lifetime JPH0650756B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP57148583A JPH0650756B2 (en) 1982-08-27 1982-08-27 Heat treatment equipment for thin plate
US06/424,503 US4550239A (en) 1981-10-05 1982-09-27 Automatic plasma processing device and heat treatment device
US06/424,287 US4550242A (en) 1981-10-05 1982-09-27 Automatic plasma processing device and heat treatment device for batch treatment of workpieces

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57148583A JPH0650756B2 (en) 1982-08-27 1982-08-27 Heat treatment equipment for thin plate

Publications (2)

Publication Number Publication Date
JPS5939341A true JPS5939341A (en) 1984-03-03
JPH0650756B2 JPH0650756B2 (en) 1994-06-29

Family

ID=15455985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57148583A Expired - Lifetime JPH0650756B2 (en) 1981-10-05 1982-08-27 Heat treatment equipment for thin plate

Country Status (1)

Country Link
JP (1) JPH0650756B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60258459A (en) * 1984-06-04 1985-12-20 Deisuko Saiyaa Japan:Kk Transferring apparatus of wafer for vertical type heat-treating furnace
JPH04127532A (en) * 1990-09-19 1992-04-28 Nec Yamagata Ltd Heat treatment of semiconductor wafer
KR100407725B1 (en) * 2001-03-14 2003-12-01 주식회사 엘리아테크 Plasma treatment system
JP2011212560A (en) * 2010-03-31 2011-10-27 Equos Research Co Ltd Reactor for saccharification

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5014997A (en) * 1973-06-13 1975-02-17
JPS5691417A (en) * 1979-12-26 1981-07-24 Fujitsu Ltd Heating treatment device for wafer
JPS56165317A (en) * 1980-05-26 1981-12-18 Fujitsu Ltd Manufacture of semiconductor device
JPS57107235A (en) * 1980-12-25 1982-07-03 Fujitsu Ltd Vacuum vapor growth device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5014997A (en) * 1973-06-13 1975-02-17
JPS5691417A (en) * 1979-12-26 1981-07-24 Fujitsu Ltd Heating treatment device for wafer
JPS56165317A (en) * 1980-05-26 1981-12-18 Fujitsu Ltd Manufacture of semiconductor device
JPS57107235A (en) * 1980-12-25 1982-07-03 Fujitsu Ltd Vacuum vapor growth device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60258459A (en) * 1984-06-04 1985-12-20 Deisuko Saiyaa Japan:Kk Transferring apparatus of wafer for vertical type heat-treating furnace
JPH0586066B2 (en) * 1984-06-04 1993-12-09 Disco Abrasive Systems Ltd
JPH04127532A (en) * 1990-09-19 1992-04-28 Nec Yamagata Ltd Heat treatment of semiconductor wafer
KR100407725B1 (en) * 2001-03-14 2003-12-01 주식회사 엘리아테크 Plasma treatment system
JP2011212560A (en) * 2010-03-31 2011-10-27 Equos Research Co Ltd Reactor for saccharification

Also Published As

Publication number Publication date
JPH0650756B2 (en) 1994-06-29

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