JPS5939024A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5939024A
JPS5939024A JP14771582A JP14771582A JPS5939024A JP S5939024 A JPS5939024 A JP S5939024A JP 14771582 A JP14771582 A JP 14771582A JP 14771582 A JP14771582 A JP 14771582A JP S5939024 A JPS5939024 A JP S5939024A
Authority
JP
Japan
Prior art keywords
film
layer
gaas
substrate
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14771582A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0419700B2 (enExample
Inventor
Kenya Nakai
中井　建弥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14771582A priority Critical patent/JPS5939024A/ja
Publication of JPS5939024A publication Critical patent/JPS5939024A/ja
Publication of JPH0419700B2 publication Critical patent/JPH0419700B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02642—Mask materials other than SiO2 or SiN

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
JP14771582A 1982-08-27 1982-08-27 半導体装置の製造方法 Granted JPS5939024A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14771582A JPS5939024A (ja) 1982-08-27 1982-08-27 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14771582A JPS5939024A (ja) 1982-08-27 1982-08-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5939024A true JPS5939024A (ja) 1984-03-03
JPH0419700B2 JPH0419700B2 (enExample) 1992-03-31

Family

ID=15436555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14771582A Granted JPS5939024A (ja) 1982-08-27 1982-08-27 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5939024A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62219616A (ja) * 1986-03-20 1987-09-26 Oki Electric Ind Co Ltd ＧａＡｓの結晶成長方法
JPH0462917A (ja) * 1990-07-02 1992-02-27 Hikari Gijutsu Kenkyu Kaihatsu Kk 化合物半導体の選択成長方法
JPH05121328A (ja) * 1991-10-28 1993-05-18 Hikari Gijutsu Kenkyu Kaihatsu Kk 化合物半導体エピタキシヤル成長方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5161265A (en) * 1974-11-25 1976-05-27 Handotai Kenkyu Shinkokai 335 zokukagobutsuhandotaisoshi

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5161265A (en) * 1974-11-25 1976-05-27 Handotai Kenkyu Shinkokai 335 zokukagobutsuhandotaisoshi

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62219616A (ja) * 1986-03-20 1987-09-26 Oki Electric Ind Co Ltd ＧａＡｓの結晶成長方法
JPH0462917A (ja) * 1990-07-02 1992-02-27 Hikari Gijutsu Kenkyu Kaihatsu Kk 化合物半導体の選択成長方法
JPH05121328A (ja) * 1991-10-28 1993-05-18 Hikari Gijutsu Kenkyu Kaihatsu Kk 化合物半導体エピタキシヤル成長方法

Also Published As

Publication number Publication date
JPH0419700B2 (enExample) 1992-03-31

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