JPS5936960A - 半導体記憶装置 - Google Patents
半導体記憶装置Info
- Publication number
- JPS5936960A JPS5936960A JP58132570A JP13257083A JPS5936960A JP S5936960 A JPS5936960 A JP S5936960A JP 58132570 A JP58132570 A JP 58132570A JP 13257083 A JP13257083 A JP 13257083A JP S5936960 A JPS5936960 A JP S5936960A
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- drain
- gate
- impurity density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 239000012535 impurity Substances 0.000 claims abstract description 31
- 230000015654 memory Effects 0.000 claims abstract description 16
- 230000006698 induction Effects 0.000 claims abstract description 11
- 239000011159 matrix material Substances 0.000 claims abstract 3
- 230000003068 static effect Effects 0.000 claims description 14
- 238000000034 method Methods 0.000 abstract description 3
- 239000012212 insulator Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 description 10
- 239000002184 metal Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005036 potential barrier Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- SXAAVRUIADQETA-UHFFFAOYSA-N 2-chloro-n-(2-methoxyethyl)-n-(2-methylphenyl)acetamide Chemical compound COCCN(C(=O)CCl)C1=CC=CC=C1C SXAAVRUIADQETA-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009532 heart rate measurement Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58132570A JPS5936960A (ja) | 1983-07-20 | 1983-07-20 | 半導体記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58132570A JPS5936960A (ja) | 1983-07-20 | 1983-07-20 | 半導体記憶装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1355877A Division JPS5399778A (en) | 1977-02-11 | 1977-02-11 | Mos and mis electrostatic induction transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5936960A true JPS5936960A (ja) | 1984-02-29 |
| JPH041505B2 JPH041505B2 (enrdf_load_stackoverflow) | 1992-01-13 |
Family
ID=15084395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58132570A Granted JPS5936960A (ja) | 1983-07-20 | 1983-07-20 | 半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5936960A (enrdf_load_stackoverflow) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50128475A (enrdf_load_stackoverflow) * | 1974-03-27 | 1975-10-09 |
-
1983
- 1983-07-20 JP JP58132570A patent/JPS5936960A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50128475A (enrdf_load_stackoverflow) * | 1974-03-27 | 1975-10-09 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH041505B2 (enrdf_load_stackoverflow) | 1992-01-13 |
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