JPS5936819B2 - ｎ型ド−ピングされたシリコン単結晶の製造方法 - Google Patents

ｎ型ド−ピングされたシリコン単結晶の製造方法

Info

Publication number
JPS5936819B2
JPS5936819B2 JP51141082A JP14108276A JPS5936819B2 JP S5936819 B2 JPS5936819 B2 JP S5936819B2 JP 51141082 A JP51141082 A JP 51141082A JP 14108276 A JP14108276 A JP 14108276A JP S5936819 B2 JPS5936819 B2 JP S5936819B2
Authority
JP
Japan
Prior art keywords
single crystal
silicon single
neutron
irradiation
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51141082A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5265661A (en
Inventor
エルンスト・ハース
カルル・プラツツエーダー
ハンスエーリツヒ・ラインフエルダー
マンフレート・シユネラー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2552621A external-priority patent/DE2552621C3/de
Priority claimed from DE19752553362 external-priority patent/DE2553362C2/de
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5265661A publication Critical patent/JPS5265661A/ja
Publication of JPS5936819B2 publication Critical patent/JPS5936819B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP51141082A 1975-11-24 1976-11-24 ｎ型ド−ピングされたシリコン単結晶の製造方法 Expired JPS5936819B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2552621A DE2552621C3 (de) 1975-11-24 1975-11-24 Verfahren zum Herstellen von n-dotierten Siliciumeinkristallen mit in radialer Richtung tellerförmigem Profil des spezifischen Widerstandes
DE19752553362 DE2553362C2 (de) 1975-11-27 1975-11-27 Verfahren zum Herstellen von n-dotierten Siliciumeinkristallen mit in radialer Richtung tellerförmigem Profil des spezifischen Widerstands

Publications (2)

Publication Number Publication Date
JPS5265661A JPS5265661A (en) 1977-05-31
JPS5936819B2 true JPS5936819B2 (ja) 1984-09-06

Family

ID=25769639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51141082A Expired JPS5936819B2 (ja) 1975-11-24 1976-11-24 ｎ型ド−ピングされたシリコン単結晶の製造方法

Country Status (4)

Country Link
JP (1) JPS5936819B2 (show.php)
DK (1) DK525276A (show.php)
FR (1) FR2332055A1 (show.php)
GB (1) GB1530948A (show.php)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4836788A (en) * 1985-11-12 1989-06-06 Sony Corporation Production of solid-state image pick-up device with uniform distribution of dopants
JPS62257739A (ja) * 1986-04-30 1987-11-10 Toshiba Ceramics Co Ltd シリコンウエ−ハ及びその選別装置
RU2145128C1 (ru) * 1998-03-19 2000-01-27 Закрытое акционерное общество "ЭЛЛИНА-НТ" СПОСОБ ПОЛУЧЕНИЯ ЯДЕРНО-ЛЕГИРОВАННОГО КРЕМНИЯ n-ТИПА (ВАРИАНТЫ)
US10468148B2 (en) 2017-04-24 2019-11-05 Infineon Technologies Ag Apparatus and method for neutron transmutation doping of semiconductor wafers

Also Published As

Publication number Publication date
DK525276A (da) 1977-05-25
JPS5265661A (en) 1977-05-31
FR2332055B3 (show.php) 1980-10-17
GB1530948A (en) 1978-11-01
FR2332055A1 (fr) 1977-06-17

Similar Documents

Publication Publication Date Title
US4278885A (en) Apparatus for measuring the concentrations of elements in a material by the capture gamma method
US5433693A (en) Neutron-capture therapy apparatus and method
EP3026673B1 (en) Neutron regulation apparatus and neutron irradiation apparatus
Patterson Homometric structures
US4119441A (en) Method for the production of n-doped silicon with a dish-shaped profile of specific resistance in a radial direction
DE102018109361A1 (de) Einrichtung und Verfahren zur Neutronentransmutationsdotierung von Halbleiterwafern
TW201912201A (zh) 中子捕獲治療系統
Kim et al. A new neutron transmutation doping system for radial irradiation uniformity
Nikolaenko et al. Effect of γ-irradiation on defect annealing in diamond
JPS52134786A (en) Radiation detector
US4728371A (en) Method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation
JP2010025781A (ja) 中性子照射済ハフニウム制御棒のγ線崩壊加速装置
SU716286A1 (ru) Термолюминесцентное вещество дл гамма-до-зиМЕТРА
Yanch et al. Design of an accelerator-based epithermal neutron beam for boron neutron capture therapy
TWI851397B (zh) 中子捕獲治療裝置
JPS57102008A (en) Control of warp of semiconductor wafer
Von Halban et al. Energy of neutrons liberated in the nuclear fission of uranium induced by thermal neutrons
Magelssen Gain Scaling Relations—Heavy-Ion Targets
Iyengar et al. Calculations of the response of Moxon-Rae detectors for neutron capture cross-section measurements
JPS5669823A (en) Impurity-adding method for semiconductor
Agu et al. Self-powered neutron detectors for measuring epithermal neutron flux
Frankenberg Reparable and irreparable damage in yeast cells after irradiation with fast electrons, conventional X-rays and 241Am alpha particles
JPH04102096A (ja) 熱中性子用遮蔽体
Mayer et al. Neutron production and time resolution of a new class moderator for pulsed neutron diffraction: Measurements and transport calculations
RU98105733A (ru) Способ получения ядерно-легированного кремния n-типа (варианты)