JPS5935356B2 - Information recording member - Google Patents

Information recording member

Info

Publication number
JPS5935356B2
JPS5935356B2 JP51027134A JP2713476A JPS5935356B2 JP S5935356 B2 JPS5935356 B2 JP S5935356B2 JP 51027134 A JP51027134 A JP 51027134A JP 2713476 A JP2713476 A JP 2713476A JP S5935356 B2 JPS5935356 B2 JP S5935356B2
Authority
JP
Japan
Prior art keywords
thin film
recording member
information
recording
information recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51027134A
Other languages
Japanese (ja)
Other versions
JPS52110634A (en
Inventor
元康 寺尾
成二 米沢
嘉敏 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP51027134A priority Critical patent/JPS5935356B2/en
Publication of JPS52110634A publication Critical patent/JPS52110634A/en
Publication of JPS5935356B2 publication Critical patent/JPS5935356B2/en
Expired legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は、情報の記録用部材に関するもので、所定の基
板上に設けられた薄膜にたとえばレーザ光などのエネル
ギービームを照射して照射部分に窪みを形成し、情報の
記録を行なうに適した部材を提供するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a member for recording information, in which a thin film provided on a predetermined substrate is irradiated with an energy beam such as a laser beam to form a depression in the irradiated area, thereby recording information. The purpose of the present invention is to provide a member suitable for recording.

従来、薄膜にたとえばレーザ光(場合によつては電子ビ
ーム)などのエネルギービームを照射して照射部分に窪
み(凹部)を形成し、記録を行なう場合の薄膜を構成す
る材料として、無機材料としてはBi、Bi−Be、C
d、Ge15Te85−x(PbI2)xなどが知られ
ている。
Conventionally, inorganic materials have been used as materials for forming thin films for recording by irradiating energy beams such as laser beams (or electron beams in some cases) on thin films to form depressions in the irradiated areas. is Bi, Bi-Be, C
d, Ge15Te85-x(PbI2)x, etc. are known.

これらは特定の用途については確かに有用な材料である
が、本発明者の実験によればBlやBl−Be(7)場
合には凹部の形状(特に輪郭)が乱れる、Cdの場合に
は平坦な膜を蒸着するのが困難である、という欠点を持
つために、たとえばビデオディスク用など、蒸着膜の平
坦度や、凹部の形状が信号対雑音比に大きな影響を持つ
用途に対しては、実用上問題があることが明らかになつ
た。本発明はこれら従来の記録材料に比して優れた記録
用部材を提供しようとするものである。
These are certainly useful materials for specific applications, but according to the inventor's experiments, the shape (particularly the outline) of the recess is disordered in the case of Bl and Bl-Be (7), and in the case of Cd. Due to the disadvantage that it is difficult to deposit a flat film, it is not suitable for applications where the flatness of the deposited film and the shape of the recesses have a large effect on the signal-to-noise ratio, such as for video discs. It has become clear that there are practical problems. The present invention aims to provide a recording member that is superior to these conventional recording materials.

本発明はTeとBeを含有する記録用部材である。本発
明に係わる材料の利点は、第1に加工用ビームを用いこ
の情報の書き込み工程で、T碑独では、記録用部材とな
るべき薄膜が球状となりやすく、形成された凹部の外周
部の形状を乱し信号のSN比を低下させるのを防止する
ことである。第2は蒸着膜を非晶質になりやすくし、結
晶粒などのために膜面に凹凸が生ずることによる雑音の
発生を防止することにある。第3図は蒸着膜の表面酸化
を防ぐことにある。なお、上記の諸点より検討した結果
、Seの含有量については一般的に原子数パーセントで
5パーセント以上、好ましくは15パーセント以上であ
ることがわかつた。
The present invention is a recording member containing Te and Be. The advantage of the material according to the present invention is that firstly, in the process of writing this information using a processing beam, the thin film that is to become a recording member tends to be spherical, and the shape of the outer periphery of the formed recess is easy to form. This is to prevent the signal from being disturbed and reducing the signal-to-noise ratio of the signal. The second purpose is to make the deposited film more likely to become amorphous and to prevent noise from occurring due to unevenness on the film surface due to crystal grains. The purpose of FIG. 3 is to prevent surface oxidation of the deposited film. As a result of considering the above-mentioned points, it was found that the content of Se is generally 5% or more, preferably 15% or more in terms of atomic percentage.

なお、この記録用部材の使用対象によつて、より詳細な
組成範囲は異なつてくる。
Note that the more detailed composition range varies depending on the intended use of this recording member.

たとえば、直接反射光または透過光で読み出しを行なう
場合にはコントラストを低下させないためにSeの含有
量は70パーセント以下、より好ましくは50パーセン
ト以下が良い。またフオトレジストの密着露光用マスク
として用いる場合には、硝酸で溶解し得るようにSeの
含有量は20パーセント以下が好ましい。SeおよびT
e以外の含有元素として、Sb,Bi,Zn,Cd,A
t,Ga,ln,Si,Ge,Sn,Sb,Ta,CU
,AU,Ag,Tt,P,j6よびSの群から選ばれた
少なくとも一種の元素を添加すると、形成される凹部の
形状を整え、よい結果をもたらす場合がある。
For example, when reading is performed using directly reflected light or transmitted light, the Se content is preferably 70% or less, more preferably 50% or less, in order not to reduce the contrast. Further, when used as a mask for contact exposure of photoresist, the content of Se is preferably 20% or less so that it can be dissolved with nitric acid. Se and T
Contained elements other than e include Sb, Bi, Zn, Cd, A
t, Ga, ln, Si, Ge, Sn, Sb, Ta, CU
, AU, Ag, Tt, P, j6, and S, the shape of the recessed portion to be formed may be adjusted and good results may be obtained.

ただし、これらTe,Se以外の元素の含有量は、合計
量として原子数パーセントで30%以下であることが、
本発明の記録用部材の特徴を失なわせないために好まし
い。また、これら以外の元素であつても、材料の性質を
大きく変えることのない元素が少量加わるのはさしつか
えないことはもちろんである。
However, the total content of elements other than Te and Se must be 30% or less in terms of atomic percentage.
This is preferable in order not to lose the characteristics of the recording member of the present invention. Moreover, it goes without saying that even if it is an element other than these, a small amount of an element that does not significantly change the properties of the material may be added.

なお、記録用部材の膜厚は200〜1000λ程度が好
ましい。
Note that the thickness of the recording member is preferably about 200 to 1000λ.

この理由はつぎの通りである。表1は、Te8Ose2
Oの記録膜を40℃湿度5%の条件で3ケ月保つたとき
のSN比の初期値からの低下量を示す。表1にみられる
ようにSe2Oパーセント含むものでも膜厚があまりに
薄いもの(200λ未満)は、酸化の影響が大きい。
The reason for this is as follows. Table 1 shows Te8Ose2
The graph shows the amount of decrease in the S/N ratio from the initial value when an O recording film is maintained at 40° C. and 5% humidity for three months. As shown in Table 1, even if the film contains % Se2O, if the film thickness is too thin (less than 200λ), the effect of oxidation is large.

また逆に膜厚をあまり厚くすると初期に8MHzのキャ
リヤーを記録したときの16MHzの高調波(孔形状の
歪みによる)を8MHzの信号のレベル差がなくなる。
これを表2に示す。従つて膜厚が200〜1000λの
範囲で攪れた効果を示す。
Conversely, if the film thickness is made too thick, there will be no level difference between the 16 MHz harmonic (due to distortion of the hole shape) and the 8 MHz signal when an 8 MHz carrier is initially recorded.
This is shown in Table 2. Therefore, a stirred effect is exhibited when the film thickness is in the range of 200 to 1000λ.

本発明の情報の記録用部材は、微細なパターンを形成で
きるという性質を持つので、上記情報の記録用部材に書
込まれた情報を用いて、直接上記部材から情報を読出す
という用い方の外、上記情報の記録用部材に凹凸の形で
書込まれた情報を、凹凸のレプリカを形成することによ
つて複写して用いる用い方、および、上記、情報を記録
された記録用部材を、エツチングまたは露光のマスクと
して用い、上記部材に隣接して設けられた、たとえばフ
オトレジスト層に凹部を形成し、大きな凹部の段差を得
て、これからレプリカを形成する用い方がある。
Since the information recording member of the present invention has the property of being able to form fine patterns, it is possible to use the information written in the information recording member to read information directly from the member. In addition, there is a method of copying and using the information written in the form of unevenness on the information recording member by forming a replica of the unevenness, and a use of the above-mentioned recording member on which information is recorded. There is a method in which a recess is formed in, for example, a photoresist layer provided adjacent to the above-mentioned member by using the recess as a mask for etching or exposure, and a replica is formed from this to obtain a large step difference in the recess.

またその他、ICのフオトレジスト露光用マスクを形成
することもできるし、多層配線の層間絶縁層などの、微
細パターンを持つた電気的絶縁層や、エツチングや拡散
、またはイオン打込みのマスクとして用いることも可能
である。以下に本発明を実施例によつて詳しく説明する
。実施例 1 第1図に示したように、両面を光学研摩し、洗浄した直
径35Cr!Lのガラスデイスク1を中心軸2のまわり
に回転させられるようにして真空蒸着装置中に配置し、
上記デイスクの情報を記録しようとする部分の下であつ
て、中心軸と中心を同一にする一つの円上にほぼ位置す
る、4つの蒸着用ボート3,4,5,および6を配置す
る。
In addition, it can be used to form a photoresist exposure mask for ICs, an electrical insulating layer with a fine pattern such as an interlayer insulating layer of multilayer wiring, and a mask for etching, diffusion, or ion implantation. is also possible. The present invention will be explained in detail below using Examples. Example 1 As shown in Fig. 1, a 35Cr diameter piece with both sides optically polished and cleaned! An L glass disk 1 is arranged in a vacuum evaporation apparatus so as to be rotatable around a central axis 2,
Four evaporation boats 3, 4, 5, and 6 are placed below the portion of the disk where information is to be recorded and approximately located on a circle having the same center as the central axis.

それぞれのボートとガラスデイスクとの間には扇形のス
リツト7,8,9,および10とシヤツタ一11,12
,13,および14を配置し、シヤツタ一が動くとスリ
ツトの任意の割合をふさぐようにする。蒸着ボート4つ
のうち、2つのみを用い、それぞれSe,Teを入れる
。装置を真空に排気した後、ガラスデイスクを120r
pmで回転させておいて、各ボートに電流を流し、各ボ
ート中の材料を蒸発させる。各ボートからの蒸発量は水
晶振動子式膜厚モニター15,16,17,および18
で検出し、蒸発速度が一定になるようにボートに流す電
流を制御する。各ボートからデイスクへの蒸着速度の比
は、各シヤツタ一の開き角の比によつて決める。蒸着膜
の膜厚は約400λとした。蒸着膜の組成は、代表的な
ものとしてSe9OTelO,se7OTe3O9se
5OTe5O9se3OTe7O9selOTe9Oの
ものを蒸着した。上記のようにして形成した膜に記録を
行なうには、第2図に示したように、上記ガラスデイス
ク1を高速(1800rpm)で回転ざせながらレンズ
ホルダー(記録用ヘツド)19をデイスクに一定距離を
保つて接近させ、パルス状で、パルスの間隔が記録すべ
き情報に応じて変調された約15mWのアルゴンレーザ
光(4880λ)20をレンズで集光して照射する。
Between each boat and the glass disk are fan-shaped slits 7, 8, 9, and 10 and shutters 11, 12.
, 13, and 14 so that when the shutter moves, a desired proportion of the slits are covered. Only two of the four deposition boats are used, and Se and Te are added to them, respectively. After evacuating the device, the glass disk was heated to 120 rpm.
pm and a current is passed through each boat to evaporate the material in each boat. The amount of evaporation from each boat is measured by crystal film thickness monitors 15, 16, 17, and 18.
The current flowing through the boat is controlled so that the evaporation rate remains constant. The ratio of deposition rates from each boat to the disk is determined by the ratio of the opening angles of each shutter. The thickness of the deposited film was approximately 400λ. The composition of the deposited film is typically Se9OTelO, se7OTe3O9se.
5OTe5O9se3OTe7O9selOTe9O was deposited. In order to record on the film formed as described above, as shown in FIG. The argon laser beam (4880λ) 20 of approximately 15 mW is focused by a lens and irradiated with pulsed argon laser light (4880λ) whose pulse interval is modulated according to the information to be recorded.

レーザ光を照射された部分の蒸着膜には、おおよそ長径
1.2μM.短径0,7μmの楕円形の穴ができ、記録
が行なわれる。この穴の輪郭がなめらかであることが、
ノイズが小さく、正確な読出しを行なえるための条件で
ある。レンズホルダーは、デイスクの回転に応じてデイ
スクの半径方向に平行な線上を移動させられる〇記録の
読出しは次のようにして行なう。
The deposited film on the part irradiated with the laser beam has a major axis of approximately 1.2 μM. An elliptical hole with a minor axis of 0.7 μm is made, and recording is performed. The smooth outline of this hole means that
This is a condition for low noise and accurate reading. The lens holder is moved on a line parallel to the radial direction of the disk in accordance with the rotation of the disk. Recording is read out as follows.

すなわち、デイスクを1800rpmη司転させ、読出
しヘツドをデイスクと一定の間隔を保つて近づける。H
e−Neレーザ光をレンズで集光して照射し、反射光の
強度と位相の変化をデイテクタ一で検出する。それぞれ
の蒸着膜組成に対する信号対雑音比の測定は次のように
して行なつた。すなわち、デイスクを1800rpmで
回転させ、6MHzでパルス巾65nsのパルス状信号
を15mWのアルゴンレーザ光であらかじめ記録してお
き、He−Neレーザ(6328λ)で反射光の濃淡で
読出しを行なつた。その結果、各組成についての初期の
信号対雑音比は次の通りであつた。Se9OTelO:
〜30dB1Se70Te30:〜35dBsSe50
Te50:〜40dB,Se30Te70:〜30d&
SelOTe9O:ゝ30dBSeおよびTe以外の元
素で、添加することによつて効果を表わすものは次のと
おりであつた。
That is, the disk is rotated at 1800 rpm and the read head is brought close to the disk at a constant distance. H
The e-Ne laser beam is focused by a lens and irradiated, and changes in the intensity and phase of the reflected light are detected by a detector. The signal-to-noise ratio for each deposited film composition was measured as follows. That is, the disk was rotated at 1800 rpm, and a 6 MHz pulse-like signal with a pulse width of 65 ns was previously recorded with a 15 mW argon laser beam, and read out using the density of the reflected light using a He-Ne laser (6328λ). As a result, the initial signal-to-noise ratio for each composition was as follows. Se9OTelO:
~30dB1Se70Te30: ~35dBsSe50
Te50: ~40dB, Se30Te70: ~30d&
SelOTe9O: 30 dBS Elements other than Se and Te that exhibit effects when added are as follows.

CdまたはZnは、添加することによつて反射率が低下
することもなく、Teを多量に含む蒸着膜において、T
♂≦記録時に表面張力によつて玉状になり、雑音を発生
しやすいのを、改善する効果がある。At,Ga,また
はInの添加は、記録によつて形成される凹部の周囲に
盛上がりが生ずるのを防ぐ効果がある。SまたはPの添
加も、凹部の周囲に盛上がりが生ずるのを防ぐ効果があ
る。eの添加は、凹部の形状を乱さずに、蒸着膜の毒性
を減らす効果がある。たとえば、Se2OTe7OGe
lOの組成のものでは信号対雑音比が約35dB、Se
lOTe5OGe4Oの組成のものでは信号対雑音比が
約30dBであつた。上記のほか、Sb,Bi,Si,
Sn,Pb,Ta,Cu,Ag,IおよびTtも、添加
量を適当に選べば、信号対雑音比の若干の改善をもたら
すたとえばSb3,BiI2,Pb2の形での添加も適
当である。Atの添加はその他に、蒸着膜を安定化させ
て経時変化を防ぐのに効果がある。
Addition of Cd or Zn does not reduce the reflectance, and in a deposited film containing a large amount of Te, T
♂≦This has the effect of improving the tendency to form beads due to surface tension during recording, which tends to generate noise. Addition of At, Ga, or In has the effect of preventing bulges from forming around the recesses formed by recording. Addition of S or P also has the effect of preventing bulges from forming around the recesses. The addition of e has the effect of reducing the toxicity of the deposited film without disturbing the shape of the recess. For example, Se2OTe7OGe
The signal-to-noise ratio is about 35 dB for the composition of 1O, and the one with the composition of Se
The signal-to-noise ratio of the composition of lOTe5OGe4O was about 30 dB. In addition to the above, Sb, Bi, Si,
Sn, Pb, Ta, Cu, Ag, I and Tt are also suitably added, for example in the form of Sb3, BiI2, Pb2, which bring about a slight improvement in the signal-to-noise ratio if the amount of addition is selected appropriately. Addition of At is also effective in stabilizing the deposited film and preventing it from changing over time.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の一実施例において、記録用部材の蒸
着を行なう装置の構造を示す図、第2図は、本発明の一
実施例において、記録用部材を被着したデイスクに、記
録を行なう装置の構造を示す図。
FIG. 1 is a diagram showing the structure of an apparatus for vapor-depositing a recording member in an embodiment of the present invention, and FIG. 2 is a diagram showing the structure of an apparatus for vapor-depositing a recording member in an embodiment of the invention. FIG. 3 is a diagram showing the structure of a recording device.

Claims (1)

【特許請求の範囲】 1 所定の基板上に薄膜を形成し、この薄膜上に加工用
ビームを照射し上記薄膜に凹部を形成することによつて
情報を記録する情報の記録用部材において、上記薄膜が
、SeおよびTeよりなり、上記Seの含有量は、原子
数パーセントで5パーセント50パーセントの範囲であ
り、かつ上記薄膜の膜厚は、200Åから1000Åの
範囲であることを特徴とする情報の記録用部材。 2 所定の基板上に薄膜を形成し、この薄膜上に加工用
ビームを照射し上記薄膜に凹部を形成することによつて
情報を記録する情報の記録用部材において、上記薄膜が
、SeおよびTeならびにCd、Zn、Al、Ga、I
n、S、P、Ge、Sb、Bi、Si、Sn、Pb、T
a、Cu、Au、AgおよびTlからなる群から選ばれ
た少なくとも一種の元素よりなり、上記Seの含有量は
、原子数パーセントで5パーセントから50パーセント
の範囲であり、上記Se及びTe以外の元素は合計量と
して原子数パーセントで30パーセント以下であり、か
つ上記薄膜の膜厚は200Åから1000Åの範囲であ
ることを特徴とする情報の記録用部材。
[Scope of Claims] 1. An information recording member that records information by forming a thin film on a predetermined substrate and irradiating the thin film with a processing beam to form a recess in the thin film, Information characterized in that the thin film is made of Se and Te, the content of Se is in the range of 5% to 50% in terms of atomic percent, and the thickness of the thin film is in the range of 200 Å to 1000 Å. A recording member. 2. An information recording member in which information is recorded by forming a thin film on a predetermined substrate and irradiating the thin film with a processing beam to form a recess in the thin film, wherein the thin film is made of Se and Te. and Cd, Zn, Al, Ga, I
n, S, P, Ge, Sb, Bi, Si, Sn, Pb, T
The content of Se is in the range of 5% to 50% by number of atoms, and the content of Se other than Se and Te is at least one element selected from the group consisting of An information recording member characterized in that the total amount of elements is 30% or less in terms of atomic percentage, and the thickness of the thin film is in the range of 200 Å to 1000 Å.
JP51027134A 1976-03-15 1976-03-15 Information recording member Expired JPS5935356B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51027134A JPS5935356B2 (en) 1976-03-15 1976-03-15 Information recording member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51027134A JPS5935356B2 (en) 1976-03-15 1976-03-15 Information recording member

Publications (2)

Publication Number Publication Date
JPS52110634A JPS52110634A (en) 1977-09-16
JPS5935356B2 true JPS5935356B2 (en) 1984-08-28

Family

ID=12212570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51027134A Expired JPS5935356B2 (en) 1976-03-15 1976-03-15 Information recording member

Country Status (1)

Country Link
JP (1) JPS5935356B2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5724036A (en) * 1980-07-18 1982-02-08 Sony Corp Optical information recording medium
NL8005693A (en) * 1980-10-16 1982-05-17 Philips Nv OPTICAL REGISTRATION DISC.
JPS59185048A (en) * 1983-04-01 1984-10-20 Matsushita Electric Ind Co Ltd Member for recording optical information and its recording method
JPH0677340B2 (en) * 1983-05-31 1994-09-28 富士通株式会社 Electron beam recording disk
JPS6029952A (en) * 1983-07-28 1985-02-15 Fujitsu Ltd Electron beam recording disk
JPS60234248A (en) * 1984-05-07 1985-11-20 Nippon Columbia Co Ltd Optical information recording medium
JPS63193330A (en) * 1987-02-06 1988-08-10 Hitachi Ltd Information recording and reproducing method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5042849A (en) * 1973-08-20 1975-04-18
JPS5051733A (en) * 1973-09-07 1975-05-08
JPS519402A (en) * 1974-07-12 1976-01-26 Canon Kk

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5042849A (en) * 1973-08-20 1975-04-18
JPS5051733A (en) * 1973-09-07 1975-05-08
JPS519402A (en) * 1974-07-12 1976-01-26 Canon Kk

Also Published As

Publication number Publication date
JPS52110634A (en) 1977-09-16

Similar Documents

Publication Publication Date Title
JPS6155176B2 (en)
JPH0369716B2 (en)
JPS5935356B2 (en) Information recording member
JPS6023997B2 (en) Recording parts
JP2834131B2 (en) Thin film for information recording
JPS6126140B2 (en)
JPS63298726A (en) Recording element containing single writing amorphous thin film optical recording layer
US4296419A (en) Member for recording information
JP2679995B2 (en) Thin film for information recording
JPS6118262B2 (en)
JPH0575595B2 (en)
JPH029954B2 (en)
JPS6339387A (en) Optical recording medium
JPH042436B2 (en)
JPS5949995A (en) Information storing medium
JP2629717B2 (en) Information recording medium
JPH041933B2 (en)
JPS5853488A (en) Recording material for information
JPS605438A (en) Optical information recording medium
JPS63155441A (en) Chalcogen glass optical card
JP2667155B2 (en) Information recording medium
JPS61168145A (en) Optical recording medium
JPS6118813B2 (en)
JP2888520B2 (en) Optical information recording medium
JPS6127813B2 (en)