JPS5934668A - Manufacture of thin solar battery - Google Patents

Abstract

PURPOSE:To enable to manufacture solar batteries with good efficiency at a low cost and in industrial manner by forming a Si thin film on a flexible film which runs continuously by a method wherein reaction chambers to form each Si layer are independently provided respectively, and buffer chambers for different reaction are provided between each of the reaction chambers. CONSTITUTION:The flexible substrate film 11 is successively fed out to the reaction chambers 15a, 15b and 15c to form an N-layer, an I-layer, and a P-layer by plasma reaction, and then wound up to a bobbin as a flexible thin film 16 whereon each Si layer is deposited. The buffer chambers 27a, 27b, 27c and 27d are placed between each of the reaction chambers, and the former chambers can be independently controlled in pressure respectively by exhaust systems 28a, 28b, 28c and 28d. Thereby, the flexible thin film 16 does not receive the contamination due to unnecessary gas at each reaction process, accordingly a flexible thin film having the same characteristic as the flexible thin film obtained in individually independent reaction chambers can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method 1 for manufacturing a thin film solar cell, and provides further details for manufacturing a thin film solar cell (1). This invention relates to improvements in the method of depositing.

Amorphous or microcrystalline silicon solar cells have attracted particular attention in recent years because they can be produced at lower cost than single-crystalline silicon solar cells. In general, inexpensive materials such as stainless steel and glass are used as substrates, and boron-doped pm amorphous silicon Mi (p jm
), pure amorphous silicon 1? A pin structure or an n +
p structure is often adopted. Even when the substrate is a flexible film, the essential structure remains unchanged, and the structure of a typical solar cell is schematically shown in FIG.

In the first (2) A14 structure 41, n − , i
-, p-silicon layers 3, 4.5 are laminated, and a collector electrode 7 made of aluminum or palladium for extracting power from the transparent electrode film 6 is formed. Points to keep in mind when manufacturing sun fields and ponds are:
11<j l The doping amount of the P layer is reliably controlled and the cost of 11 is 1 layer.

This is to prevent the infiltration of unnecessary debris or contamination by unnecessary gas when creating each layer of the p-layer.When using a hard material such as stainless steel or glass as a substrate, the substrate size is generally small, so a separate process is required to move the substrate. The substrate is often moved intermittently by the transport means. In this case, the n1ζ, i-layer, and p-layer reaction chambers may be separated and independent, or JP-A-56-11
As shown in Japanese Patent No. 4387, n/f'l+1 layer, p
A means such as a shutter is provided in the reaction chamber of each layer, and each reaction chamber can be reliably separated by opening and closing the shutter, thereby preventing unnecessary gases or contamination during the formation of each layer.

However, when using a flexible film as a substrate, it is convenient to provide the flexible film in a long continuous state for industrial production, and the flexible film itself is difficult to transport.・”・Dan. In such a case, even if the reaction chambers for forming the 0 layer, i layer, and p layer are installed independently to carry out the plasma reaction, the minimum opening required for the EJ flexible film to run is is required for each reaction chamber, and the fusible film runs continuously across each reaction chamber through these openings, so that even if the dimensions of the openings are made as narrow as possible, the The movement of gas cannot be prevented, and this causes changes in the gas components within each reaction chamber, resulting in deterioration of battery characteristics. In particular, when there is a pressure difference between reaction chambers of the same size, the deterioration of characteristics becomes remarkable.

The present invention has been made as a result of intensive studies to eliminate these drawbacks, and the present invention has been made as a result of intensive studies to solve the above-mentioned drawbacks.
While continuously supplying a silicone film, a silicon thin layer of 1i
It is characterized by forming an ω, and its purpose is to form a taichō with excellent characteristics! Batteries have good performance and are inexpensive.]
f. To provide a method for manufacturing beam-like.

DESCRIPTION OF THE PREFERRED EMBODIMENTS A more detailed explanation will be given below with reference to the drawings, but the drawings merely show one embodiment of the invention and do not limit the invention.

In addition, before and after the reaction shown in FIGS. 2 and 3, there is a lower Ml, an application chamber for forming an electrode layer (for example, a sputtering chamber),
It is also possible to manufacture everything in an integrated manner by adding a reaction chamber for forming the transparent electrode Ri and the collecting electrode.

FIG. 2 shows an I'JM device iR as an embodiment of the present invention, in which 1! ! This shows the second outline of the construction.

A flexible substrate film 11 with a lower mold `AIi''I formed thereon is placed in the unwinding chamber 13 in a state of being wound up on the roll 12. It is unwound through the unwinding roll 14, and the reaction chamber 15
a.

15b, 15clC sent out, 1′r silicon 8・j
As the flexible thin film 16, the profit-taking roll 1 is
7 and is wound around a pobbin 19 in a winding chamber 18. The flexible thin film 16 is taken out from the winding chamber 18 and
A transparent conductive film 6 and a collector 1 shown in the figure are coated with a pole 7 and used as a material for a solar cell.

Reaction chambers for forming the nrfi, i-layer, and p-layer by plasma reactions, that is, a first reaction chamber 15a, a second reaction chamber 15b, and a third reaction chamber 15e, are installed in order, and each reaction 115a,
15b and 15eK are exhaust threads 20a and 20b, respectively.
, 20 c and gas d7 person means 21 a, 2
lb and 21c are connected.

Also, in each of the reaction chambers 15a, 15b, 15c, there are a pair of quadrupolar poles 22a:23a, 22b:23b, respectively.

22c and 23c are incorporated and connected to high frequency power sources 24a, 24b, and 24c installed externally. Also, the unwinding 113 and the winding chamber 181C are connected to the exhaust system 25.26.
is connected. Between the unwinding chamber 13 and the first reaction chamber 15a, between the first reaction chamber 15a and the second reaction chamber 15b, between the second reaction chamber 15b and the third reaction chamber 15c, and between the EJ3 reaction chamber 15c and the winding. Buffer chambers 27 are provided between the intake chambers 18 and 18, respectively.
a, 27b, 27c and 27d are installed, and each buffer fi27a, 27h, 27c, 27dlC is an exhaust system 2RA, 281), 2)+, respectively.
(!, 28 d is traditional, and each independently E (
::ll Care has been taken to ensure that the pressure inside the room can be controlled.

The method for forming each silicon layer will be explained in more detail using the manufacturing apparatus j that has a structure that is similar to that shown in FIG.

An IJ air system 25 is connected to the unwinding chamber 13, and an exhaust system 28a is connected to the buffer chamber 278. Unrolling￥
The force generated at 13 is due to gas leaking from the sealed part.

Dissolved gas in retentive base material 11 and flexibility base material 11 Table I+
11 is the main gas, and the gas adsorbed to the vessel wall is generated only in the initial state after the bobbin 12 is installed in the unwinding chamber 13. Therefore, the exhaust capacity of the exhaust system 25 is constant. The exhaust system 25 is determined by taking into account the following:
Enters the first reaction chamber 15a through d27a, and enters the first reaction chamber 15a through n Jis
Although it is not inevitable as long as it does not threaten the plasma reaction for formation, the above-mentioned generated gas species include a pregnant air component and a water vapor component. is desirable. Also, the exhaust system 28a of the buffer chamber 27a
In order not to affect the first reaction chamber 15a due to the pressure of the unwinding depth 13 due to insufficient air pressure, and to shorten the evacuation time in the initial state when the bobbin 12 is installed in the unwinding chamber 13. Takumi is effective.

The first reaction chamber 15a is continuously supplied with a silane gas containing phosphine whose composition is precisely controlled by the gas introducing means 21a (
(Sometimes it is used after being diluted with hydrogen gas or argon gas) is subjected to plasma decomposition between direct & 22a and 23a to which a high frequency power supply 20a is applied.
Since the flexible substrate -Jb 4:t it which is in contact with the electrode 22a controlled to a certain predetermined temperature is heated, the decomposed gas is preferentially deposited on the flexible substrate 11. Qf,
I(
KaVko111 was caped in the 1'σ month, and the first transmission line 28a was loosely (
Xi' of the 4th chamber 27a, T row part, 1, Su' 1 Mt of leaking waste, υ person-(rubbing from the unwinding chamber 13, and υ person's waste from the 1 reaction chamber 15a, suction 1-1 volume) Outlet room 13
It plays a role of isolation from the first reaction chamber 15a in terms of egas movement.

Furthermore, Condolence 1 reaction room] 5a and story 2 reaction? A buffer chamber 27)) is installed between A≦151), and the buffer M27
The exhaust system 28b is shown upside down in b. Due to the IJ air system 281), the pressure in the first chamber 27b is reduced to the first reaction chamber 5
a, the lower of the pressures in the second reaction chamber 151) is equal to g (・ is controlled slightly lower, so that it is possible to Even if it travels from the first reaction chamber 15a to the second reaction chamber +5b, the waste in the first reaction chamber 15a does not move to the LR2 reaction chamber +5b, and the first reaction chamber 15
a and the second reaction 'zd 15 b exhibit the behavior of C as if they were independent reaction chambers. The pressure itself in the buffer chamber 27b is set as described above, but in practice, the pressure in the ER1 reaction chamber 15
The opening 29 between a and the buffer chamber 27b and the buffer chamber 27b and t
The size of the opening 3o with respect to the A2 reaction chamber 15b is determined at the time of device manufacture, but it cannot be said that it is set to the optimum size for carrying out the reaction, and it is difficult to respond to changes in reaction conditions. It is preferable to install the slit 40 shown in FIG. 4 in order to reduce the manufacturing cost of the device i without making any changes to the devices of 11ω and without requiring high 41'1 degree machining to the device f4 itself. The use of the slit 40 has the advantage of allowing the gap 41 of the slit portion to precisely match the running portion of the flexible base material 11.

Another advantage is that the pressure in the buffer chamber 27a can be easily controlled when the pressure difference between the first reaction chamber 15a and the second reaction chamber 15b is large.

The flexible base material 11 is the buffer chamber 2.
7b, silane gas (hydrogen gas) enters 3j (2 reaction chambers 15b, and is introduced from the gas introduction means 21b).

(sometimes used after being sparged with argon gas or the like) is subjected to plasma decomposition in the same manner as in the first reaction chamber 15a and is deposited as a single layer on the n) so.

The buffer chamber 27c also has the same effect as the buffer chamber 27b, and the second reaction chamber 15b behaves as if it were an independent reaction chamber. It is sometimes used after passing through the first Sumire 1 East J Gi 27c and converting it into a 7 run gas (hydrogen scum, fulgono gas) containing dibora/ in the Ki 3 reaction chamber 15'c. ) is a glasma decomposition, and the flexible base material 11 is coated with 9 layers.
6 and winding is carried out in the winding chamber 1s ">3 bobbin 19" 2. The buffer chamber 27c is f,! 1 run room 27 wire) and buffer% 27d are loose (4i 't (i 27 a and n
J'
They exhibit exactly the same action and effect, with only the difference in force direction.

n) Hinoki 4. iJ: Pa and p layers are shown in FIG. Output, electrode length, introduced gas flow, '1 (i-pole 22 a,
The temperature and pressure of 22 b and 22 c, and the pressure of each reaction chamber Kj (kj) are carried out separately.

The flexible 74 film 1G produced as described above is formed without being stained by the same uneasy residue for about 1 hour in each reaction, so the flexible group U11 is allowed to run continuously, and Even though it is carried out in continuous reaction chambers, it is as if the flexible thin film obtained in each individual reaction chamber is equivalent to that of a flexible thin film obtained in an individual reaction chamber. A flexible thin film having the following characteristics is obtained.

In Figure 1, the surface of the flexible crystalline phase 11 is kept horizontal and moved in the horizontal direction, and the deposition direction of each layer is oriented in the same direction to prevent contamination caused by contaminants deposited inside each reaction chamber. However, it goes without saying that the surface of the flexible base material 110 may be kept straight and run horizontally or vertically.

) 42 figure is g planar jlj, 1422 a, 2
2 b.

Although an example in which the flexible crystal phase 11 is running upwards on the 22c is not shown, the flexible crystal phase 1 is placed on the rotating cylindrical '1iQ31a, 31b, and 31c as shown in t+G3.
1 are brought into close contact with each other, and opposing arc-shaped electrodes 32 a, 32
It is also possible to generate a 67917 layer by causing plasma decomposition between b and 32 c, and in this case, the effect of the valley buffer chamber is as shown in the second tA. J') 2s0. R. The above is pintl#
90 was shown for the Li structure, but there is essentially no difference in the NIP structure.

The effect of the flat plate slit 4U shown in FIG. Suitable for cases where there is a large pressure difference between the chambers (σ) or between the unwinding chamber and the pick-up chamber, and the picture center 1
Please let Makoto refrain from entering the room.
(If you want to control the waste components in the reaction 1.'
ii Multiple sulins 1.43 may be provided in ``6'' and 5 in Figure 1.・. FIG. 7 (Middle position 1 of the highly flexible base feather 11.
Rolled slit 44a considering 412 retention in 1j,
44b'? ; Adopted in this example is flexibility i1. ! i month 11
NL'+iii of 1゛1-rule 44a.

45a and the resistive group O) Jll's space position 1 is '+till? 1tll L, soreni, q
/L 44 b 11I, Zr~l-J This is an example of a means for bringing the old plate-shaped portion 45b as close to the readable base material 11 as possible to facilitate pressure control within the MH window.

Thus, according to the present invention, a solar cell with excellent characteristics can be manufactured efficiently and inexpensively using KTEM7, and its effects are reasonable (
fart,! It is a JVR dog that contributes in conjunction with the fact that it is based on sex. Further, as a further preferred embodiment of the present invention, (1) Buffer chambers are provided at both ends of each reaction chamber, and the buffer chamber between the reaction chambers (C position! 4tL) is provided with a A method of the present invention, characterized in that an exhaust system is provided and activated.

(11) A method of the present invention in which each reaction chamber has an exhaust port near each chamber.

(+111) The method of the present invention is characterized in that each buffer chamber is provided with at least one slit member.

[Brief explanation of the drawing]

Fig. 1 is a cross-sectional view of a typical silicon thin film solar cell, Fig. 2 is an example of a manufacturing apparatus having planar electrodes, Fig. 3 is an example of a manufacturing apparatus having cylindrical electrodes, and 716
1 is a diagram showing an example of 11 incomplete slits. In Figure 1, l is for control, 艷)≦17・ilm, 2 is for lower part 1
1 is a polar layer, 3 and 4.5 are silicon layers, 6 (transparent electrode 4ヅ, 7 a, 7 b, 7 c are collection type 4Φ, not shown)
. In Figure 2, ]l? 3] Actress, ), lj board film, 1
2 is a bobbin, 13 is an unwinding chamber, 14 is an unwinding roll,
l 5 a, 15 b, 15 c are reaction chambers, 1
6. A thin film, 17 is a roll roll, 8 is a winding chamber, 19 is a bobbin, 7. Oa, 20b. 20c exhaust system, 21a, 21b, 2], c is waste introduction means, 22a, 23a, 22b, 2ab. 22c, 23c are electrodes, 24a, 24'b,
24c. is the high frequency 11'1 source, 25.2fi is the exhaust system, and 27a. 27 b, 27 c, 27 d are v: solidity, 2
8a. 281), 28c, and 28d are exhaust; 4, 29, and 30 are openings. In FIG. 3, 31a, 3lb, and 31c are cylindrical electrodes, and 32a, 32b, and 32c are circular arcs 4'lTb 4m. In FIG. 4, 40 indicates a slit and 41 indicates an opening. y<5 In the figure, 42 indicates a slit. IT 6 e! In 41, 43a and 43b indicate slits. In Fig. 7, 44a, 44b and 45a, 45b are -
- Shows a loop-shaped slit. Special t'r applicant Makoto Saka, Nagaseki, Agency of Industrial Science and Technology -

Claims (1)

[Claims] N films composed of different conductivity types of silicon can be deposited on a film by glow discharge plasma decomposition (,/!) to continuously produce thin film solar cells. integrally and consecutively (1'η In the reaction '41'l, the above possible a '+i
K Philno, consecutive A? i'e, the said 2ξ
(A method for producing a far film solar cell, which is characterized by forming a J4 conductive silicon layer in each reaction chamber while operating the 411 gas system in one chamber.