JPS5844775A - Amorphous silicon semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE:To obtain a solar cell having a high voltage electromotive force by a method wherein an amorphous Si device is composed of an N type layer, an intrinsic semiconductor layer and a P type layer and a doping agent consisting of a kind of group III element is included in the intrinsic semiconductor layer and the P type layer and the density of the P type layer is increased than that of the intrinsic semiconductor layer. CONSTITUTION:An Si evaporation source 8 covered with a shutter S1 and an evaporation source 10 consisting of a group III such as Al or the like covered with a shutter S2 are arranged on a base plate having an exhaust path 3 containing a butterfly valve 2 and a hydrogen gas discharge tube 7 at the lower face. Next, a bell jar 1 having a heater 5 at the inside of a ceiling and a stainless steel substrate 4 locating below the heater 5 is mounted on the base plate and the inside of the bell jar 1 is maintained at 10<-3>-10<-7>Torr and the substrate 4 connected to the negative terminal of a DC power source 6 is heated at 250-450 deg.C. At the same time, a hydrogen ion is poured in the bell jar from the discharge tube 7 and the shutters S1 and S2 are alternately opened and an amorphous Si layer 30 consisting of an N type layer 30n, an I layer 30i and a P type layer 30p having higher impurity density than that of the layer 30i is deposited and the deposition is repeated.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an amorphous silicon semiconductor device and a method for manufacturing the same.

In order for a semiconductor material of the general type to be useful, it can be doped with any Km type or tlpW! In this respect, crystalline silicon is an extremely useful semiconductor material, not to mention the fact that it is widely put into practical use.
The production of crystalline silicon sludge requires a great deal of time and cost, and it is difficult to obtain a thin layer with a large area.

On the other hand, amorphous silicon C is hereinafter referred to as "a-silicon". ) If, it is very advantageous in that it does not require the process of crystal growth and can easily form a thin layer with a large area, but its irregular atomic arrangement structure, which is amorphous, Since there are many dangling bonds in which the covalent bonds remain broken, there are many gap stays, and it is not possible to obtain a large doping efficiency.
This is extremely low.

A so-called green discharge method is conventionally known as a method for obtaining a-silicon. This glow discharge method is to decompose silane gas (by glow discharge in a vacuum chamber) to generate active silicon and hydrogen atoms or partially decomposed products,
This is a method of depositing breath-silicon with dangling bonds blocked by hydrogen atoms on the substrate provided in the vacuum chamber. This is carried out by introducing a gas which is a hydride of a Group 1 element, such as diborane, phosphine, arsine, etc., into the chamber.

The a-silicon obtained by d% by this glow discharge method can be said to be a useful semiconductor material because the dangling bonds are blocked by hydrogen atoms.
In doping, it is necessary to use diborane, phosphine, arsine, etc., which can be decomposed by glow discharge together with silane gas, because these gases are toxic and their handling is difficult, and they also cause pollution. It is necessary to take complete countermeasures, and silane gas is also a dangerous gas with the possibility of explosion, so countermeasures are also required. Therefore, there are considerable obstacles to manufacturing a-silicon semiconductor devices on an industrial scale by the glow discharge method.

In addition, in the green discharge method, the structure of the resulting a-silicon Il and the ratio of impurity elements introduced into the silicon during doping are determined by the plasma state generated by the green discharge method. Despite being dependent on 1iK,
It is very difficult to control the state of this plasma and difficult to maintain it stably. Therefore, it is necessary to sufficiently control the proportion of hydrogen introduced into silicon and the concentration of impurity elements. Therefore, it is difficult to obtain a-silicon having a desired state, for example, a conductivity type into which an impurity element is introduced at a high concentration and also having good characteristics.

Furthermore, in the Gree-discharge method, the production speed is extremely small, on the order of several angstroms/second, and even though a-silicon is formed in a thin layer over a large area and is uniform in thickness, kl construction, they are almost 1111L as well
This is very difficult because it depends on the state of the plasma.

On the other hand, one of the a-silicon semiconductor devices that is actually attracting the most attention is solar cells).
- In silicon solar cells, large conversion efficiencies can be obtained relatively easily.In constructing this solar cell, it is necessary to The m9 layer part and the pmlj11ml layer are laminated via the ◎ part called ◎), or the p-1-+
It is optimal that *t of a configuration is stacked, and according to p-1-1111 structure 1, a large conversion efficiency can be obtained, and due to its extremely heavy construction, d a large electromotive force voltage can be obtained. However, by the glow discharge method described above, the
- #'1 emergency K11 for manufacturing silicon semiconductor layer
A complicated process is required. That is, as mentioned above, by doping with a compound gas of a Kll carbon group element, PI! JJI
Although it is possible to form a theoretical layer by doping with a compound gas of a group Ⅰ element,
If these are formed in the same vacuum chamber, including fJIIIC) formation,
It is necessary to completely remove or replace the dopant gas used in the step of forming the silicon layer portion in the subsequent step, and it is also necessary to completely remove or replace the dopant gas used in the step of forming the silicon layer portion. Therefore, not only the attached dopant but also the dopant introduced into the a-silicon layer portion on M& will cause the glow group to increase in the subsequent step of forming the a-silicon layer portion of a different conductivity type. If activated by the plasma of i and mixed into the island-silicon layer portion formed in the subsequent step, an a-silicon layer of the desired conductivity type cannot be obtained.

That is, for example, in the formation of an n-type N part, a ribbon is used. When the S-silicon layer portion formed at the temperature is to be of the l-type, it is difficult to form the S-silicon layer. pl! And the sube will disappear. Of course, similar inconveniences occur in the process of reducing the Y value of the p-type layer portion.

In order to prevent such a phenomenon, once the preceding process is completed, the inside of the vacuum chamber should be completely free from contamination by the dopant F, but this is very cumbersome in reality [7] However, it is difficult to completely remove contamination, and special care must be taken to store the substrates in between. Although it is theoretically possible to form a 1-silicon layer of a single conductivity type in each of m vacuum chambers, in practice it is possible to transfer the layer to another vacuum chamber. This is extremely impractical, since the substrate is exposed to the atmosphere when doing so, and the equipment becomes enormous.

Thus, although it is possible to form a useful a-silicon layer by the glow discharge method,
It is not possible to advantageously and easily fabricate an a-silicon semiconductor chain having a semiconductor structure of 1llI. (9) In addition to the glow discharge method described above, a sputtering method is also known, but due to doping, kF1 It is necessary to use the same gas as in the glow discharge method, and the environmental conditions under which sputtering can be carried out are the same as in the glow discharge method.
IIIi It is a method with a low degree of control over silver, and the film forming speed is also low, and the phenomenon of mixing of dopants from the preceding process into the subsequent silicon layer shape is very important. , has the same or similar drawbacks as the Gussie discharge method.

The present invention has been made based on the above-mentioned circumstances, and p-k-! I @a- with strong sound and good characteristics
Another object of the present invention is to provide an a-silicon semiconductor device W1 comprising a silicon semiconductor layer and particularly suitable as a solar cell.Another object of the present invention is to reliably and advantageously carry out the above-mentioned a-silicon semiconductor device. We would like to provide you with a method that can be manufactured.

The semiconductor device 1 of the present invention is characterized by - type layer portion,
an a-silicon semiconductor layer (10) in which an intrinsic semiconductor layer portion and a pHamr portion are layered with IIK@, and at least the intrinsic semiconductor layer portion and P
W! The layer segment contains a dopant consisting of one of the elements of group I#1 of the RSL group, and the concentration of the dopant in the p-type layer portion is at one point higher than that in the intrinsic semiconductor layer portion. .

In the method of the present invention, in the presence of active leaves and hydrogen ions obtained by releasing hydrogen scum at 11K in a vacuum chamber, silicon is evaporated from a silicon evaporation source. The step of forming an n-type layer portion of the substrate Km-silicon placed in the vacuum chamber, and the step of forming an n-type layer portion made of silicon on the substrate Km disposed in the vacuum chamber; In the presence of hydrogen ions, silicon is evaporated from a silicon evaporation source provided in the vacuum chamber, and a dopant is evaporated into the vacuum chamber from a dopant evaporation source consisting of an element from group C of the nine periodic table. In addition to the evaporation, the step of forming an intrinsic semiconductor layer made of a-silicon and the step of forming the intrinsic semiconductor layer are performed by increasing the evaporation rate of the dopant from the dopant evaporation source. - forming a p-type layer made of silicon; the step of forming the intrinsic semiconductor Ni portion is performed in conjunction with the step of forming the type 1 layer portion and the step of forming the p-type layer portion; At the point.

The present invention will be specifically explained below with reference to the drawings.

In the present invention, #! As shown in Figure 1, 1lIl! is made of a-silicon, which does not contain a dopant that is harmful to elements of the Element Group of the Periodic Table of the Elements, such as aluminum, or contains a very small concentration of dopants. A layer portion 30m is formed on the substrate 4, and on this type II layer portion 30, an l type layer portion 301 made of a-silicon containing a minute concentration of aluminum, which is the same dopant, is formed on the type 11 layer. part 3
0 m above, and further above this 1lilj part 301 K,
The same dopant, aluminum, is used in the type 1 layer portion 30.
1. Contains a high concentration of a-silicon and p.
form the mold layer portion 30p, and thus these three layer portions 3
A second 1-silicon semiconductor layer 31 having a similar p-1-m configuration is provided on the 1-silicon semiconductor layer 30 as necessary for the p-1-m configuration. , or further a similar a-silicon semiconductor layer as shown in FIG.
i, thereby forming an a-silicon semiconductor device tl-.

The example shown in FIG. 1 is a thick @ battery, and 32 indicates a transparent electrode layer containing, for example, indium -chloride as a main component.

The present invention a-silicon semiconductor device t#i In the above structure, the a-silicon is not doped in any way and the detailed cause is unknown or weak 11! ! Therefore, each of the a-silicon semiconductor layers 30, 31, etc. has a h-c-n configuration. Therefore, as in the example shown in the figure, a solar cell with these as active layers and By doing this, a large conversion efficiency can be obtained, and in particular, by layering the silicon semiconductor layers 30, 31, etc., a state 1 in which a plurality of thick wafer elements are connected in series can be obtained, resulting in a high conversion efficiency. Thick s with electromotive force voltage
It becomes um. Since the doping agent is the same for all layers of each a-silicon semiconductor body layer 30, 31 hemorrhoid, manufacturing is easy and the cost is very low.

The semiconductor device of the present invention can be suitably manufactured as follows. That is, as shown in FIG. 2, an exhaust path 3 has a Pelger IK butterfly valve 2 forming a vacuum chamber.
A vacuum pump (not shown) is connected via the Pel jar 1, and the inside of the Pel jar 1 is thereby heated to a pressure of, for example, 10=~10-' Tor.
The Kti substrate 4 inside the Pelger 1 is placed in rO high vacuum state.
and heat it to the heater 5] at a temperature of 150 to 500.
℃, preferably 250 to 450℃, and 1
[by current power supply 6] board 4KO~-10kV, preferably Fi
-1~-6kV DC negative voltage is applied, and the output is Tk
Activated leaves and hydrogen ions from a hydrogen gas discharge tube 7, which is connected to the outlet of the Pelger IK facing the plate 4, are introduced into the Pelger 1, and then silicon evaporation I18, which is provided facing the substrate 4, is introduced into the Pelger 1. While heating to evaporate the silicon, and while continuing the silicon 011 bombardment, the silicone oxide (14), which is a type of element of group Ⅰ of the periodic table, was provided in the Pelger 1 so as to face the substrate 4. A first step of heating 1G of an aluminum evaporation source using aluminum as an evaporation source material to evaporate aluminum at zero or extremely low evaporation rate;
This evaporation is performed in the second stage, which is slightly larger than the first #11, but still relatively small ψ, and in the third stage, which is evaporated at an evaporation rate in the same range as in normal p-type doping. By sequentially controlling the evaporation of aluminum at each stage, as shown in Figure 11, aluminum as a dopant was contained on one substrate 4 at an extremely minute concentration. A-U type layer portion 30m made of silicon is formed on the first stage rliK, and K is formed on this m type layer portion 30m.

A type 1 layer portion 301, which is similar to silicon, containing aluminum at a minute concentration is formed in the second stage lIK, and further on this i type layer portion 301, aluminum is added to the i type layer portion 301. Form the PA1 layer portion 30p containing a-silicon at a very high concentration, and repeat the evaporation rate control by controlling the Al(15) miniram evaporation source 10 over three stages WItK as necessary. Similarly, the second with p-1-n@ formation
- The silicon semiconductor layer 31 is stacked on top of the silicon semiconductor layer 30 (1 Mkg).

It can also be formed by stacking Hatake-silicon semiconductor layers similar to #7m1 and #C. An a-silicon conductor device is thus produced. The example in Figure 1 is an Al(nium evaporation source 10
1!911 control is displayed twice, and 3
1mx31 and 31p indicate US portions similar to 30n, 301 and 30p, respectively.

In the above, for heating the silicon evaporation source 8'H and the aluminum evaporation jilG! Any heating means such as fi, resistance heating, electron gun heating, induction heating, etc. can be used. It is necessary to prevent coarse particles of the evaporation source material from flying off (due to bumping in the evaporation source) and adhering to the substrate 4. To do this, a coarse particle scattering prevention member that forms a curved vapor path is required. , you can use it.

Further, the same result can be obtained even if a shutter 82 related to aluminum evaporation is attached in the first step of controlling the evaporation rate of the aluminum evaporation @io. 81Fb -.

Further, in an example of the hydrogen gas Ill tube 7, as shown in FIG. 3, one cylindrical electrode member 22 having one gas population 21, and a discharge space 23 provided at one end with this one electrode member 22. A discharge space member 24 made of cylindrical glass, for example, surrounding the discharge space member 24, and another ring-shaped electrode member 26 having an outlet 25 installed at the other end of this discharge space member 24.
The one electrode member 22 and the angular force I! When a direct current or alternating current voltage is applied to the pole member 26, the hydrogen gas supplied through the gas supply 21 causes a discharge space 23, thereby causing electron discharge. Active hydrogen and ionized hydrogen ions formed by energetically activated hydrogen atoms or molecules are discharged 1 through the outlet 25. This illustrated example of open-circuit WIJs material 24Fi double pipe #I
27. It is made of nitrogen and has a configuration that allows cooling water to flow through it.
28 shows the cooling water inlet (17) and outlet. 29tj One turtle! 1 part 2? This is a cooling fin.

The distance between the electrodes in the above hydrogen gas discharge tube 7 is 10 to 1
5g+, the applied voltage Fisoo ~ 5oov, and the pressure of the discharge air tank 23 is approximately FilO-''T.rr □In order to control the evaporation rate of the aluminum evaporation source lO, k is the aluminum evaporation source. However, in order to achieve appropriate evaporation rate control, it is necessary to know the actual evaporation state. It is preferable to use a sil analyzer or the like.

In the method of the present invention as described above, a
-Silicon has good semiconductor properties because dangling bonds are blocked by hydrogen atoms, and as mentioned above, Ka-silicon has weak KFi when it is doped to -1%A. Therefore, in the first step of the three-step evaporation rate control of the aluminum evaporation source 1G, which is carried out while silicon evaporation continues (18), the dopant has a conductivity type of 1G. By reducing the evaporation rate of some aluminum to zero or blocking its evaporation by opening the shutter 82], only silicon evaporation is carried out, and the electrode layer portion 30m formed by the a-silicon type is formed. is formed, or by making the evaporation rate of aluminum extremely small, the introduced Al 1 =
The concentration of um is so minute that it forms naturally! K, which compensates for III, is in an insufficient concentration state, thereby forming a type 1 layer portion 30 which still has n-type *ttU.

In the next second stage @, the evaporation rate of Al-1-ram is higher than that in the first stage, but it is still relatively small, and the concentration in the formed a-silicon is minute. , naturally formed mIl or a-silicon which has been compensated to effectively become an intrinsic semiconductor] is formed.

and#! By increasing the evaporation rate of aluminum in the third stage 11 than in the second stage (19), the a-sililon formed is in an excess concentration just enough to compensate for the naturally formed m-type. A p-side layer portion 30p is formed of a-silicon which contains aluminum of 30% and is therefore pvii.

In the present invention, the evaporation rate of the aluminum evaporation source 10 may be controlled in any manner. To explain a typical one of these, as shown in Fig. 4 (a) K, at step #11, the aluminum concentration in tja-silicon is
#12 with a constant evaporation rate that results in a cage lower than the minimum compensation concentration C1 necessary to compensate for the naturally formed type 1.
Stage IIK is higher than the lowest compensation concentration C1.
The minimum dope concentration C2 required to achieve K is a constant evaporation rate that is a low value, and in the third stage 11, a constant evaporation rate that is a value higher than the minimum dope concentration C2.
Well, there is a method of increasing the evaporation rate of aluminum in stages. As shown in Figure s4 (b), in the @i stage, aluminum evaporation starts midway through the process and evaporates at a constant rate of increase over time. The method of increasing the speed to a concentration exceeding stepless C2 is as shown in Fig. 4 (C) K.
At 1 mK, Al-L-ram is not evaporated, and in the second stage, the aluminum concentration is higher than the minimum compensation concentration CI and is set at a constant evaporation rate such that the #ψ value is higher than the minimum doping concentration C2. and then 'i! There are other methods such as increasing the evaporation rate over time so that the aluminum concentration finally reaches the minimum doping concentration C2.

Here, *, the values of t' minimum compensation concentration C1 and minimum doping concentration C2 vary depending on the formed 1-silicon0allK, so is it possible to fix them fixedly? , C1=0.01 hara 1, C2=
It is 0.1 atomic arc. The horizontal axis 1ts in FIG. 4 is the layer thickness of the silicon semiconductor layer 30 with the deformed surface of the substrate as the reference +(0).

And even if the CI and C2C) values are unknown,
For example, as shown in Figure 4 (C), from the first stage
Starting at an evaporation rate that makes the aluminum concentration zero (21), the aluminum concentration is continuously increased to a value exceeding the minimum doping concentration C2.
However, by increasing the evaporation rate of aluminum, the second stage is also executed, ensuring that the desired p-1 - ugliness - silicon semiconductor 30 is formed.

In the present invention, the evaporation rate of aluminum evaporation @ 10 is controlled from the third stage through the second stage to the first stage 11.
Of course, even if K moves to #i, the same 11-1-juku configuration can be obtained, although the configuration order is reversed.

Further, according to the method of the present invention, the formation of a-silicon is carried out by vapor deposition of silicon in the presence of active hydrogen and hydrogen ions obtained by discharging hydrogen gas, and the vapor deposition of silicon is continued. From 1k onwards, the rate of aluminum evaporation is controlled in three stages, controlling the heating temperature and applied voltage of the substrate 4, controlling the evaporation rate of silicon, and controlling the hydrogen gas discharge tube 7. (22) Pelger 1 by controlling the amount of hydrogen gas supplied and the Wt pressure
Since the degree and amount of active hydrogen introduced into the aluminum evaporation source and the amount of hydrogen ions can be independently controlled, 1-silicon with desired good properties can be obtained, and the aluminum evaporation source By precisely controlling the evaporation rate of aluminum by controlling the heating degree of 10 and controlling the opening and closing of the shutter 82 related to the aluminum evaporation, the type 1 layer portion, 1, each having good characteristics, can be obtained. The type layer portion and the P type layer portion can be reliably formed in the order or in the reverse order to reliably produce an a-silicon semiconductor layer having a p-type structure;
In addition, the p-1-m structure 011l layered structure can be obtained very easily.
- Silicon KFi is evaporated with a controlled evaporation rate; apart from the aluminum, there is no contamination of foreign substances that may cause contamination; the process is extremely simple since only one dopant is used;

In addition to the above, in the method of the present invention, it is easy to increase the film forming speed, and it is possible to form a thick a-silicon semiconductor layer in a short time. Even if the a-silicon semiconductor device of the present invention has a large area, it is possible to obtain an a-silicon semiconductor layer having a uniform composition and a uniform thickness in its surface direction. Although the case where aluminum is used as the dopant of Group 1 elements that can be produced in the above-described manner has been described, in the present invention, indium, gallium, etc. may be used instead of aluminum.

Hereinafter, an example of the present invention will be described in the case of manufacturing a solar cell. #! In the #I device shown in Fig. 2, the inside of the Pelger 1 is maintained at a vacuum level of 10-1◎rr, and the substrate 4 made of stainless steel is heated to a temperature of 400°C by the heater 5.
Heat it to ℃ and turn on the DC power supply 6! l-4kV
A glow discharge was generated by applying a DC negative voltage of 600 VO to the -1-0 electrode member 22.26 while supplying hydrogen gas at a flow rate of 25 ee/min to the hydrogen gas discharge tube 7KFi. The shutter 81
The shutter 82 is opened to allow the silicon to evaporate at an evaporation rate of 20λ/sec until it reaches the substrate 4, and then opens the shutter 82 when 5 seconds have elapsed after the start of the evaporation of the silicon. In this state, evaporation of nium in aluminum is started by heating the aluminum evaporation source 10 using a resistance heating method, and by continuously increasing the heating temperature, J)I
245 seconds by increasing the aluminum evaporation rate
After silicon and aluminum have been evaporated for a period of time, the shutter 12 is closed to stop the evaporation of aluminum, and while continuing the evaporation of silicon, the evaporation rate of aluminum is set to t-1111111L, and so on. Therefore, according to the structure shown in Figure 1, a structure a was obtained in which a seamy-structure a-silicon semi-S layer with a thickness of about 500 mm was doubly energized on 1 & 4, and Ilj! is an a-silicon solar cell by providing a transparent wL ring layer called ITO with a thickness of 3000 μm. ! I did it. The concentration distribution of aluminum in the S-silicon conductor layer K was as shown in FIG.

When we investigated the characteristics of this solar cell, we found that the open circuit voltage was 171.
2 mV % short circuit current $19.1 wam% F Y
It is understood that the conversion efficiency of X I K k is about 3.5 arcs, which is an excellent characteristic.

As described above, according to the present invention, it is possible to provide a Hatake-silicon semiconductor device which is provided with an a-silicon semiconductor layer having an Rlp-1-1 structure and good characteristics, and which is particularly suitable as a solar cell. Thus, it is possible to advantageously and reliably manufacture such a semiconductor device, and it is possible to provide a method by which a configuration modeled on the C1-m configuration can also be obtained by customers.

[Brief explanation of the drawing]

Figure 1 is an explanatory diagram showing the configuration of a solar cell according to an embodiment of the present invention, Figure #12 is an explanatory WIkm diagram showing an example of a device used to carry out the method of manufacturing a semiconductor device of the present invention, #11
Figure 3: An explanatory cross-sectional view showing the configuration of an example of the hydrogen gas discharge tube used in the present invention, Figures (A) to (8) show the control of the evaporation rate of aluminum in -WgK of the present invention. FIG. 2 is an S diagram showing the relationship between layer thickness and Al 1=U concentration for explanation. 1... Pelger 3... Exhaust path 4... Substrate 6... DC ms7... Hydrogen gas discharge tube 8... Silicon evaporation source 10... Aluminum evaporation source 21... Gas inlet 22 .26... Electrode member 23... Discharge space 30
．． 31...Amorphous silicon semiconductor layer 32...
Transparent electrode layer 4th decoy (b) (8) Procedural amendment (1 孭) July 2, 1980 Commissioner of the Japan Patent Office Kazuo Wakasugi 1. Indication of the incident Showa 6 Patent Application No. 142416 2. Invention Name: Amorphous silicon conductor device and its 0m
111 Method 3, Relationship with the case of the person making the amendment Patent applicant, i, LM/, - Written by GILLS, 1-chome Nishi-Shinjuku, Shinjuku-ku, Tokyo! ! Quantity', JN! 6C Name) (Concave) Konishi Rokuto Shinkoran Co., Ltd. Kinsha 4, Agent 51, Date of amendment order 6, Number of inventions increased by amendment 1) Details 1114 Ifllll 1st line ~ 55wt Said CtZ
Correct it. - [This is because in order to obtain a 1-silicon semiconductor of the desired conductivity type, impurity elements must be introduced at a high concentration in KFi, unlike in the case of crystalline silicon; When an element is introduced, the structural state of a-silicon changes, the carrier (!son or Neel) O mobility decreases, resulting in a highly unstable semiconductor, and in the end, effective doping efficiency cannot be obtained. Therefore, for example, solar cells, field effect transistors, or -F11 photoreceptors, semiconductor devices, etc. can be used as materials.
There are many more problems to be solved when using silicon than when using crystalline silicon. For example, as mentioned above, in 1-silicon, there are many gap units caused by dangles and groups within its energy gap, so it cannot be used as is for the structure of the semiconductor layer of a semiconductor device. , during this time, for ■, if we introduce hydrogen atoms into ti~a-silicon and block the dangling bonds, then
It is known that uniform characteristic improvement is possible. Furthermore, VC is the conductivity of l-silicon! I! In the case of tube control, doping to the desired conductivity Mt* is not easy compared to crystalline silicon, and it is difficult to obtain a good MQ or FIP type TV-VXS body by doping. There are layers. Furthermore, in semiconductor devices such as solar cells, it is desired to improve the photoelectric conversion efficiency, but it is not always clear which conductivity types of semiconductor layers should be combined and configured to be advantageous. At present, no semiconductor device having a practically desirable configuration has been found. Also, regarding the manufacturing method of an a-silicon semiconductor layer used in semiconductor devices such as solar cells. A glow discharge method is known as one of the conventionally preferred methods. This glow discharge method

Claims (1)

[Scope of Claims] 1) An amorphous silicon semiconductor layer including a voltage type layer portion, an intrinsic semiconductor layer portion, and a p-type layer portion are layered in this order, and at least the intrinsic semiconductor layer portion and the pli layer are separated. An amorphous silicon semiconductor device comprising a dopant made of one of Group 1 elements of the periodic table, and wherein the concentration of the dopant in the p-type layer portion is higher than that in the intrinsic semiconductor layer portion. 2) In the presence of active hydrogen and hydrogen ions obtained by discharging hydrogen gas in a vacuum chamber, silicon is evaporated using a silicon evaporation source installed in the vacuum chamber; The substrate placed in the vacuum chamber is made of amorphous silicon and has a power of 1mW! (2) In the vacuum chamber, silicon is evaporated from a silicon evaporation source provided in the vacuum chamber in the presence of active hydrogen and hydrogen ions obtained by discharging hydrogen gas. At the same time, the dopant evaporation source (an evaporation source) made of one of the Group 1 elements of the periodic table provided in the vacuum chamber is evaporated to form an intrinsic semiconductor layer portion made of amorphous silicon. and a step of forming a p-type layer portion made of amorphous silicon by increasing the evaporation rate of the dopant from the dopant evaporation source in the step of forming the intrinsic semiconductor layer portion, The step of forming the layer portion includes the step of forming the layer portion.
Forming process of llF part, forming process of p-type layer part, and 0II
A method for manufacturing an amorphous silicon semiconductor device, characterized in that IK is performed. 3) The step of forming the member-shaped layer portion, the step of forming the intrinsic semiconductor layer portion, and the step of forming the pM layer portion are repeated in the same order as claimed in claim 2. A method for manufacturing the amorphous silicon semiconductor IT described above.