JPS5933840A - Resin sealing method of semiconductor device - Google Patents
Resin sealing method of semiconductor deviceInfo
- Publication number
- JPS5933840A JPS5933840A JP14448982A JP14448982A JPS5933840A JP S5933840 A JPS5933840 A JP S5933840A JP 14448982 A JP14448982 A JP 14448982A JP 14448982 A JP14448982 A JP 14448982A JP S5933840 A JPS5933840 A JP S5933840A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- sealing
- metal fine
- fine wires
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 33
- 239000011347 resin Substances 0.000 title claims abstract description 33
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000007789 sealing Methods 0.000 title claims abstract description 13
- 239000007787 solid Substances 0.000 claims abstract description 9
- 239000004020 conductor Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000005538 encapsulation Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 abstract description 14
- 239000003822 epoxy resin Substances 0.000 abstract description 3
- 229920000647 polyepoxide Polymers 0.000 abstract description 3
- 239000000919 ceramic Substances 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 239000012943 hotmelt Substances 0.000 abstract description 2
- 238000007650 screen-printing Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 239000003826 tablet Substances 0.000 description 6
- 239000008188 pellet Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007932 molded tablet Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、半導体素子を絶縁基板上に搭載し、金属細線
で配線した後、前記半導体素子および金属細線を樹脂で
封止する方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of mounting a semiconductor element on an insulating substrate, wiring it with thin metal wires, and then sealing the semiconductor element and the thin metal wires with a resin.
従来、上述の樹脂封止をするには、エポキシ樹脂、シリ
コーン樹脂等の液状樹脂を注射器を用いて適量だけ半導
体素子(ペレット)および配線用金属細線上に滴下し、
ペレット及び金属細線を被覆しているが、この方法はつ
ぎの(1)から(4)に示す様に、
(1)注射器で樹脂を滴下する際、ニードルの先端で半
導体ペレットや金属細線を傷付は易い。Conventionally, in order to perform the above-mentioned resin sealing, an appropriate amount of liquid resin such as epoxy resin or silicone resin is dropped onto the semiconductor element (pellet) and the thin metal wire for wiring using a syringe.
Although the pellets and thin metal wires are coated, this method has the following problems (1) to (4): (1) When dropping resin with a syringe, the tip of the needle may damage the semiconductor pellets or thin metal wires. It's easy.
(2)又樹脂の滴下範囲が必ずしも円形でなく、ペレッ
トの形状、集積度によって種々な形状が要求される為、
自動化が難しい。従って、最終的には手動で行なう為、
作業工数が増大する。(2) Also, the dropping area of the resin is not necessarily circular, and various shapes are required depending on the shape of the pellet and the degree of accumulation.
Difficult to automate. Therefore, in the end it will be done manually,
The number of work hours increases.
(3)上記(2)の作業中、ニードルを動かして所望の
塗布範囲を塗布する際、樹脂中に気泡をふくみ易い。(3) During the operation in (2) above, when moving the needle to apply the desired coating area, air bubbles are likely to be formed in the resin.
(4)液性樹脂を使用している為調合、脱泡等の作業が
必要である。従って、樹脂の取り扱い時の安全衛生上の
問題が残る。(4) Since liquid resin is used, work such as mixing and defoaming is required. Therefore, health and safety issues remain when handling the resin.
等の生産上、原価上および安全衛生上に多大な支障をき
たしていた。This caused a great deal of trouble in terms of production, cost, and health and safety.
本発明の目的は、これらの欠点をと如除いた半導体装置
の樹脂封止方法を提供することである。An object of the present invention is to provide a method for resin-sealing a semiconductor device that completely eliminates these drawbacks.
本発明の方法は、半導体ペレットと金属細線が蝦計で被
覆される形状に成型された固型状の樹脂を金属細線上に
配置し、しかる後、固形状の樹脂を加熱して溶融硬化さ
せることによって樹脂封止する構成を有する。In the method of the present invention, a solid resin molded into a shape that covers a semiconductor pellet and a thin metal wire is placed on the thin metal wire, and then the solid resin is heated to melt and harden. It has a structure in which it is sealed with resin.
つぎに本発明を実施例によシ説明する。Next, the present invention will be explained using examples.
第1図(a) l (b)は本発明の一実施例を説明す
るだめの工程順の断面図である。FIGS. 1(a) and 1(b) are sectional views illustrating an embodiment of the present invention in the order of steps.
まず、第1図(a)に示すようにセラミックなどの絶縁
基板1上に真空蒸着法、スパッタ法、スクリーン印刷法
などによって導電体層2,3や抵抗体層4等のパターン
を被着形成し、その後、半導体素子5を導電体層3の上
に接合する。半導体素子5の接合後公知の方法で金属細
線6を用いて半導体素子5と導電体層2との間を接続す
る。次に、半導体素子5及び金属細線6が完全に被覆す
る形状にホットメルト型エポキシ樹脂をタブレット7に
成型し、そのタブレット7を、第1図(b)に示すよう
に、金属細線6の上に配置する。次にホットプレート又
は恒温槽に入れ、150°020H加熱することによシ
タブレット7を溶融させ、更に硬化させて樹脂層7′に
よシ封止する。First, as shown in FIG. 1(a), patterns such as conductor layers 2 and 3 and resistor layer 4 are formed on an insulating substrate 1 made of ceramic or the like by vacuum evaporation, sputtering, screen printing, etc. Then, the semiconductor element 5 is bonded onto the conductor layer 3. After the semiconductor element 5 is bonded, the semiconductor element 5 and the conductor layer 2 are connected using a thin metal wire 6 using a known method. Next, hot-melt epoxy resin is molded into a tablet 7 in a shape that completely covers the semiconductor element 5 and the thin metal wire 6, and the tablet 7 is placed on top of the thin metal wire 6, as shown in FIG. 1(b). Place it in Next, the tablet 7 is placed in a hot plate or thermostatic oven and heated at 150°020H to melt the tablet 7, and is further hardened and sealed with a resin layer 7'.
以上の様に本発明では、予め一定量、一定寸法の固形状
樹脂を用いるので、■作業性がよく、従来の液状の樹脂
に比べ作業時間が半減できる。■被覆形状が一様な製品
ができる。■気泡が発生しにくい。■固型な為排気が不
要で衛生的である。As described above, in the present invention, since a fixed amount and fixed size of solid resin is used in advance, (1) workability is good and the working time can be halved compared to conventional liquid resins. ■Produces products with uniform coating shape. ■Bubbles are less likely to occur. ■Since it is solid, no exhaust is required and it is hygienic.
等の多大な効果が得られる。更に従来方法では樹脂の流
れ具合を制御するために樹脂の塗布量と粘度値とを厳し
く管理する必要があったが、本発明の方法によれば、そ
れがなくなり、無人化が可能となシ、工業上極めて効果
大である。You can obtain great effects such as. Furthermore, in the conventional method, it was necessary to strictly control the amount of resin applied and the viscosity value in order to control the flow of the resin, but with the method of the present invention, this is eliminated and the system can be unmanned. , which is extremely effective industrially.
なお、上側では、タブレット7の加熱溶融は常圧の下で
行っているが、他の例として、第1図に示す状態の構成
体を真空乾燥器に入れ、器内の雰囲気を500〜10T
orrにセットした後、150’C。Note that in the upper case, the tablet 7 is heated and melted under normal pressure, but as another example, the structure shown in FIG.
After setting to orr, 150'C.
20I(加熱することによシ、タブレット7を溶融させ
、さらに硬化させて封止樹脂層7′として封止する。本
例は、常圧に比べて、封止樹脂層の1密性が増大し信頼
性がより高くなる効果がある。20I (By heating, the tablet 7 is melted and further hardened to be sealed as a sealing resin layer 7'. In this example, the sealing resin layer has an increased tightness compared to normal pressure. This has the effect of increasing reliability.
第1図(a) 、 (b)は本発明方法の工程順の断面
図である。
1・・・・・絶縁基板、2,3・・・・・・導電体層、
4・・・・・・抵抗、訃・・・・半導体素子、6・・・
・・・接続細線、7・・・・・成形タブレット、7′・
・・・・・封止樹脂層。
5−
丹 7 辺(11)
’:;A70(b)FIGS. 1(a) and 1(b) are cross-sectional views showing the steps of the method of the present invention. 1... Insulating substrate, 2, 3... Conductor layer,
4... Resistor,... Semiconductor element, 6...
... Connection thin wire, 7 ... Molded tablet, 7'.
...Sealing resin layer. 5- Tan 7 side (11) ':;A70(b)
Claims (2)
体素子とその接続線とを樹脂で封止する方法において、
前記半導体素子と前記接続線が被覆される形状に成型さ
れた固形状の樹脂を前記接続線上に配置し、しかる後前
記固形状の樹脂を加熱して溶融硬化させることによって
樹脂封止することを特徴とする半導体装置の樹脂封止方
法。(1) In a method of sealing with resin a semiconductor element bonded onto a predetermined conductor layer on an insulating substrate and its connection wire,
A solid resin molded into a shape that covers the semiconductor element and the connection wire is placed on the connection wire, and then the solid resin is heated to melt and harden to perform resin sealing. Characteristic resin encapsulation method for semiconductor devices.
ることによって前記樹脂を溶融硬化させることを特徴と
する特許請求の範囲第1項に記載の半導体装置の樹脂封
止方法。(2) The resin sealing method for a semiconductor device according to claim 1, wherein the solid resin is heated in a low-pressure atmosphere to melt and harden the resin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14448982A JPS5933840A (en) | 1982-08-19 | 1982-08-19 | Resin sealing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14448982A JPS5933840A (en) | 1982-08-19 | 1982-08-19 | Resin sealing method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5933840A true JPS5933840A (en) | 1984-02-23 |
Family
ID=15363514
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14448982A Pending JPS5933840A (en) | 1982-08-19 | 1982-08-19 | Resin sealing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5933840A (en) |
-
1982
- 1982-08-19 JP JP14448982A patent/JPS5933840A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5900581A (en) | Resin sealing structure for elements | |
GB2164794A (en) | Method for encapsulating semiconductor components mounted on a carrier tape | |
JPS5933840A (en) | Resin sealing method of semiconductor device | |
US4183135A (en) | Hermetic glass encapsulation for semiconductor die and method | |
JPS5848442A (en) | Sealing of electronic parts | |
JPH0426781B2 (en) | ||
JPS5817646A (en) | Manufacture of semiconductor device | |
US4151638A (en) | Hermetic glass encapsulation for semiconductor die and method | |
JPS6175549A (en) | Electronic circuit including semiconductor element and manufacture of the same | |
JPS6164132A (en) | Semiconductor device | |
JPS61212043A (en) | Semiconductor mounting substrate | |
JP4020594B2 (en) | Manufacturing method of semiconductor device | |
JPH04142042A (en) | Manufacture of semiconductor device | |
JPS62104044A (en) | Passivating method | |
JPH07283248A (en) | Semiconductor device and manufacture thereof | |
JP2594244B2 (en) | Semiconductor sealing method | |
US5237206A (en) | Low-melting point glass sealed semiconductor device and method of manufacturing the same | |
JPH04171966A (en) | Manufacture of semiconductor device | |
JPS612331A (en) | Resin sealing system for semiconductor element | |
JPS63177430A (en) | Sealing method for semiconductor device with resin | |
JPS63177428A (en) | Sealing method for semiconductor device with resin | |
JPH02119147A (en) | Manufacture of resin-sealed semiconductor device | |
JPS5728344A (en) | Semiconductor device | |
JPH0637125A (en) | Method for sealing semiconductor element | |
JPS6273636A (en) | Manufacture of hybrid integrated circuit |