JPS5929478A - Semiconductor light-emitting element - Google Patents

Abstract

PURPOSE:To obtain the light-emitting element provided with the semiconductor laser of construction wherein a high specific resistance layer is not included, and a driving electron element using an InGaAsP mixed crystal on which a high specific resistance layer can hardly be formed. CONSTITUTION:The light-emitting element consists of a semiconductor substrate 21 consisting of P type InP, the first semiconductor layer 22 of approximately 2mum in thickness consisting of P type InP, the second semiconductor layer 23 of approximately 1,000Angstrom in thickness consisting of In1-xGaxAsyP1-y, the third semiconductor layer 24 of approximately 1mum in thickness consisting of N type InP, the fourth semiconductor layers 251 and 252 of approximately 0.5mum in thickness consisting of P type InP, the fifth semiconductor layers 261 and 262 of approximately 0.5mum in thickness consisting of N type InP, an insulating film 27 consisting of SiO2, a control electrode 28 formed by Al, an AuGeNi/Au electrode 29, and an AuZn/Au electrode 30. After the first to the fifth semiconductor layers have been formed by crystallization using a liquid-phase growing method, a groove of approximately 3mum in width is formed in the depth reaching the inner part of the third semiconductor layer 24. An insulating film 27 of approximately 1,000Angstrom in thickness consisting of SiO2 is formed inside the goove 31, and a control electrode 28 is formed on the part which constitutes the side wall of the groove 31. A high speed laser oscillation switching can be performed by merely applying a very small positive voltage to the control electrode 28.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor light emitting device provided with a semiconductor bond layer region for laser oscillation and an electronic element for driving the semiconductor laser.

Semiconductor lasers are already at a practical level in terms of performance and reliability as light sources for optical information transmission. l! However, in order to transmit large amounts of information at higher speeds, it is desirable to integrate electrical drive circuits and semiconductor lasers. Not only does it become possible to perform high-speed modulation by reducing the amount of stray capacitance caused by wiring, but it also makes it possible to downsize the entire device by integrating the driver rlrlJ circuit semiconductor on the circuit semiconductor substrate, making it possible to reduce the size of the entire device. 111: can also be improved.

As such a semiconductor light emitting device, for example, the one shown in FIG. 1 is known. The equivalent circuit diagram of a device in which a field effect transistor is integrated as a driving circuit in a semiconductor layer is shown in FIG.

In FIG. 1, 11 is an n-type semiconductor substrate, j2 is an 11-type cladding layer, 13 is an active semiconductor layer, 14 is an I)-type cladding layer, 15 is a high resistivity layer, 16 is a 1]-type semiconductor layer, 17
is a p-type diffusion region, 18 is an n-side electrode, 19 is a source electrode,
20 is a gate electrode, and 21 is a drain electrode. The thickness of the depletion layer formed at the junction between the gate electrode 2o and the semiconductor layer 1G is changed by the pressure of 1L applied to the gate electrode 20, and the current flowing between the source and drain is controlled.' The current controlled by the field effect transistor flows into the laser section through the 1) type diffusion region 17.
l. 13 becomes a part of the active layer of 1/-→, and the oscillation is caused by the first
Occurs in the direction perpendicular to the plane of the paper in the figure. There is peace of mind that the field effect lanced and laser parts are electrically separated, and the high resistivity layer J5 plays this role. As a specific example, one using A, 6UaAs type semiconductor is known.

However, the structure shown in FIG. 1 is limited to cases where the high resistivity layer 15 can be easily manufactured. However, as a light source for optical communications in the 1μI11 band, where the fiber exhibits low loss and low molecular weight TK characteristics, the development of I n GaA,s L' semiconductor radar is progressing, but I n 0aAs I'
In the mixed crystal system, it is possible to create a high resistivity layer using AlGaA,
It is more difficult than the S series. Therefore, the structure shown in Figure 1 can be changed to In(
It is difficult to apply this method to JaAsP-based mixed crystals.

The present invention eliminates the above-mentioned drawbacks and includes a semiconductor relay 5 having a structure in which a high resistivity layer does not intervene, and a drive 1 old 1; child 74;
Regarding a semiconductor light emitting device with integrated semiconductors - C1 layers are sequentially layered, and the semiconductor layers of at least
and has a small refractive index, the first and FiT semiconductor layers have conductivity types opposite to each other, and a laser section that produces Radical emission, and a fourth semiconductor layer of the third semiconductor layer. f4 and a fifth semiconductor J~ are laminated, the fourth semiconductor layer has a conductivity type of the first semiconductor 1, ν, and the fifth semiconductor layer has the same conductivity type as the third semiconductor. A groove having the same conductivity type as the semiconductor layer and having a depth reaching the inside of the third semiconductor layer according to Table 7fi1 of the semiconductor layer of i'+il 2 (35) is formed in a straight line, and the sidewall of the groove is The structure is characterized in that it consists of a control electrode and a driver formed through an insulating layer.

The present invention will be explained in detail below based on the drawings. .

FIG. 3 is a sectional view of one embodiment of a semiconductor light emitting device according to the present invention, which is made of In0aAsI' mixed crystal.

In the figure, 21 is a semiconductor substrate made of pWInP;
22 is a first semiconductor layer made of p-type InP and has a thickness of about 2 μIn; 23 is a second semiconductor layer made of In+-xOaxA-syP+-y and has a thickness of about 100 OA; 24 is a +1 type 1n; 251 and 252 are p-type I n P fourth semiconductor layers with a thickness of about 0.5 It Ill, and 261 and 262 are n-type I n l'. Approximately 0.5 μr thick
27 is an insulating film made of Sr02, 28 is a control electrode made of Ad, and 29 is Au0eN.
i/A, u's ylt, Gig, 30 is Au Zn/
Au's ijL 4'? s Jl is l, p. From the first semiconductor layer 22 to the fifth semiconductor IN using a liquid phase growth method
After growing the crystal up to 2G2, the third half 2. A groove deep enough to reach the inside of the rI body layer 24.

3) A sword f is produced, and an insulating film 27 made of SiO2 with a thickness of about 1000 AOJ is formed on the inside thereof by the CV, l,1 method.

,? / On the insulating film 27, there is a control layer on the part that corresponds to the side wall of the groove material.
? .

Pole 28 is formed. The length of the element in the direction perpendicular to the plane of the paper is about 400/Zlll, and the end face is an open face of the crystal.

In use, a bias Vl/pressure is applied so that the potential of the electrode 3o is higher than the potential of the 11L pole 29; for example, the electrode 30 is grounded, and the electrode 29 is provided with a negative bias voltage.

Apply pressure. If you do that, the third half-shi! ; Junction between integral layer 24 and fourth semiconductor layer 251 and fifth half 7A
Since a voltage is applied to the junction between the monolithic layer 261 and the fourth semiconductor layer 252 so as to create a ζ4 reverse bias state, current cannot flow through the junction. In this embodiment, the semiconductor layer 4 and the fifth semiconductor layer are composed of two layers 251, 252, 26 [and 262], respectively.
This is to suppress the break down that flows into yellow.

jjlj1廁II Ilf, (positive 'lσ, river marked on the wire 28) 11 "・When the fourth semiconductor layers 251 and 252 are in contact with the insulation 1M27, electrons are induced in the part where the insulation 1M27 contacts, and the electrode 29
Electrons iE are emitted from the direction along the interface between the insulating film 27 and the semiconductor layer.
i, 31i: is fif, and electrons are injected into the second semiconductor layer 23. In addition, the holes 'K l'IiU flow from the electrode 30 toward the second half Nf layer 23 . The second semiconductor layer 23 becomes an active layer and the second semiconductor layer 23 becomes an active layer.
(This occurs in the j-direction. It is possible to switch the ray oscillation at a high speed by simply applying a small positive voltage to the control electrode 28. In this embodiment, the open side l electrode 28 It is possible to apply 71L pressure of 1cm to flow about 8001 people of water and to switch the oscillation.

FIG. 4 is a cut-away diagram of another embodiment of the present invention, in which the control electrodes are divided into two, 281 and 282, and one control electrode, for example, 281? ζr [Apply y pressure and bias 1'17. Keep the flow iAr, 2) 32
The modulation '11 can be applied with pressure.

As described above in detail with the embodiments, according to the present invention, it is possible to integrate a semiconductor laser and its driver element using a material for which it is difficult to grow a high resistivity layer on a semiconductor substrate, and A semiconductor light emitting device capable of high speed AI'JT can be realized. Furthermore, since the 871 model is also made of 17i1, it is not only smaller in size, but also can be manufactured at a lower cost.

[Brief explanation of the drawing]

Fig. 1 is a sectional view of a conventional example, Fig. 2 is a further equivalent circuit diagram thereof, Fig. 3 is a sectional view of one embodiment according to the present invention, and Fig. 4 is a sectional view of another embodiment. It is. 11 is an n-type semiconductor substrate, 12 is an n-type rad ls'i,
13 is an active semiconductor layer, 14 is a p-type cladding layer, 15 (J
High 17 resistance layer, 16 is n-type semiconductor layer, 17 is p-type expansion layer 11
State: Drunkenness A. 18 is an 11-type IE electrode, 19 is a source electrode, and 7. (IL
21 is the drain electrode, 2[ is the semi-2.1-inch substrate, ?2 is the semiconductor layer of i"151, 2S( is the second semiconductor layer, 2/
If:j third half, Ed body layer, 251 and 252 are fourth semiconductor layers, 261 and 262 are fifth small body layers,
27 is an insulating film, 28, 281, and 282 are standard electrodes, 29 and 30 are electric currents, and 31 is ?・It is the world. Figure 1 Figure 2 Figure 9 Figure 3 R

Claims (1)

[Claims] On the top of the semiconductor substrate, the first. second and third semiconductor layers are stacked, at least the first and third semiconductor layers have a larger forbidden band width and a smaller refractive index than the second semiconductor layer; The semiconductor layer has a conductivity type opposite to each other and is connected to a laser section for laser oscillation and the third semiconductor layer.
A fourth semiconductor layer and a fifth semiconductor layer are laminated on the semiconductor layer, and the fourth semiconductor layer has the same conductivity type as the first half-layer, and the fifth The semiconductor layer has the same conductivity type as the first and third semiconductor layers, and a groove having a depth reaching from the surface of the fifth semiconductor layer to the inside of the third semiconductor layer is formed in a straight line, A semiconductor light emitting device characterized in that the side wall ζ of the groove is comprised of a laser 5 driving section in which controlled polarization is formed via an insulating film.