JPS5928391A - Hetero-junction type photodetector - Google Patents
Hetero-junction type photodetectorInfo
- Publication number
- JPS5928391A JPS5928391A JP57139028A JP13902882A JPS5928391A JP S5928391 A JPS5928391 A JP S5928391A JP 57139028 A JP57139028 A JP 57139028A JP 13902882 A JP13902882 A JP 13902882A JP S5928391 A JPS5928391 A JP S5928391A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- guard ring
- inp
- hetero
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 3
- 230000001747 exhibiting effect Effects 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 6
- 230000006866 deterioration Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000010521 absorption reaction Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000001443 photoexcitation Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 241000238557 Decapoda Species 0.000 description 1
- 108010074864 Factor XI Proteins 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 235000000935 Santalum yasi Nutrition 0.000 description 1
- 241000775525 Santalum yasi Species 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005243 fluidization Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000007363 ring formation reaction Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
Abstract
Description
本発明はヘテロ接合型光検出器、特に光通信用光検出器
として高速・高感度、低雑音なポ）・ダイメート（以下
Ｐ ｌ）と呼ぶ）あるいはアバランシ・ホトダイオード
（１夛、下Ａ Ｐ ＩＪと呼ぶ）に関するものであン、
。
半導体光検出器の中で１）］）あるいはＡ １．） Ｉ
）は高速かつ高感度であり、光通信システムにおける光
検出器として重ｊ用なものであシ、光源である半導体レ
ーザ・発光ダイオードと共にその開発が活発にｉ（１め
られている。
）’６，１ｌｒｉ信用半導体レーザの発振波長は０．８
μｒｎかも１．６ ／Ｊ ｍのもの、例えばＧａＡｓ−
０ａＡＩＡｓ系あるいはＩｎＵａＡｓＰ−ＩｎＰ系の半
導体レーザがその主流である。（］ａＡｓ−（ＪａＡｌ
Ａｓ系半導体レーザの主な発振波長域である０、 ８
ｐ ｍ活用光検出器としてｄｌ、Ｓ１単結晶友用いたＰ
ＤあるいはＡ Ｐ Ｉ）が最も広く使用されておシ優れ
た特性を示しているが、１μＩｎ以」二の波長光を検出
することは１料的に困却・であり、光フィイバ材の伝送
４ハ失の極低賊である４１．３μｍ〜１．６μｎｌ波長
城では使用できない。またＳｔ月料に代る１、５月ｎ域
まで光感度を有する光検出器として（Ｊｅ−ＡＩ’ｌ）
があるが暗電流や過剰雑音が大きいこと、温度特性が悪
いこと笠の、叩山゛Ｃ光通イ：イ用９°ｒ、イ寅出器と
して最滴拐刺と（」−旨いυ１１１＜、■−■族化合物
゛１′、導体等によるこの１１〜・１６μロ１ｂＭでの
「腎れ／ξ）゛Ｃ；検出器が要求されている。
現在、この１．１〜１．６μロ１波同域川光険出器とし
−Ｃ研究・開発が進められている材料としては、Ｉｎ（
ＪａＡｓ、ＩｎＧａＡｓＰ、（ＪａＡＩＳｂ、（ＪａＡ
ｄＡｓＳｂ、（ＪａＳｂ等のｍ −ｖ族化合物半導体結
晶によるものが報告さノシている。例えばｎ’ −Ｊ
＋ｌＰ基板上にＩＩ型Ｉ ｎ Ｇ ａ Ａ ｓ層をエビ
タ・ヤシＹルＩＪＺ長陵、亜鉛あるいはカドミウム等の
１）型不１シ１（物ｆ：選選択散散た単純プレーナ形、
ちるいはヤ面拡散後メ゛す゛エツチングしだメ・リー型
等のＦＦｌ告例がちる。またｌ；４近においてはｐ−ｈ
図会をＩ ｎ Ｐ中に作製し、Ｉｎ（ＪａＡ、ｓあるい
はＩｎｏａＡｓ層を光吸収層とし、゛アバランシＩ領域
をＬ Ｉｔ Ｌ’層中に形成ｊ−ることにより低＋＋ｌ
Ｆ１７．流化、高増倍化が達成さ〕じＣきており、前
記光吸収層をアバランシ領域と分陪した形状で上記Ｉ
ｎ Ｐ層中にガードリングを形成してよシ確実にエツジ
・ブレークダウンを防止することを目−ノ°なわら］、
ｒ＋１．’−Ｉｎ（）ａＡｓ−Ｉｎ’（１；＋ＡＣ，ｌ
’糸を用いたブレーナ構造Ａ Ｐ Ｉ）として１１−１
１接合を１、 ｎ Ｐ層中に形成し、［」つ逆バイアス
の印加により空乏層を光吸収層であるＩｎ（ＪａＡ、ｓ
あるいはＩ ｎ （Ｊ ：ｑ Ａ−ｓ Ｐ層中に拡げる
例は、例えば特願昭５４ ３９１６９ 、 ／ｌ’、７
願昭５４ １２４９７５ 明に１１１書中に記載されて
おり、低１１に電流化するために優れたｎｔｔ造である
が、上記の明細層１中に記載された構造のみでｔよエツ
ジ・ブレークダウンを防止するｄ′１容範囲が限られて
いる等の問題点を有していた。
また基本第１ｑ造１ニーに記特願の明卸１１９．中の記
載と同４ｊｌに光吸収層としては１ ｎＯａＡ ｓある
いはＬ ｎ （Ｊ ａＡｓｌゝ層を使用するが、ｌｎＰ
層中に１）−ｎ接合を有し、且つとの１）−ＩＩ接合周
縁にガー１’ ＩＪングを形成した例として／ｌ’、Ｙ
願５６ ２０６５６１ あるいは特願５７ ００４５６
６明細宵中のＦｔＣ載の例等がある。とＪしらの例でシ
」、いずれの場合にも、ガードリング領域は］、’ ｎ
Ｐ層中に形成されている。」二記したイThe present invention relates to a heterojunction photodetector, particularly a high-speed, high-sensitivity, and low-noise photodetector for optical communications. ) is related to
. Among semiconductor photodetectors, 1)]) or A 1. ) I
) is high speed and highly sensitive, and is used as a heavy photodetector in optical communication systems, and its development is being actively pursued along with semiconductor lasers and light emitting diodes, which are light sources. The oscillation wavelength of the 6,1lri reliable semiconductor laser is 0.8
μrn may be 1.6/J m, for example GaAs-
OaAIAs-based or InUaAsP-InP-based semiconductor lasers are the mainstream. (]aAs-(JaAl
The main oscillation wavelength range of As-based semiconductor lasers is 0 and 8.
P using dl, S1 single crystal as a p m-utilizing photodetector
D or API) is the most widely used and shows excellent characteristics, but it is difficult to detect light with wavelengths greater than 1 μIn, and transmission using optical fiber materials is difficult. It cannot be used with wavelengths of 41.3 μm to 1.6 μnl, which are extremely low and have lost 4 ha. It can also be used as a photodetector with photosensitivity up to the n range in January and May (Je-AI'l) in place of the St monthly charge.
However, the dark current and excessive noise are large, and the temperature characteristics are poor. , ■-■ group compound ゛1', conductor, etc. There is a need for a detector for this 11 to 16μ 1bM.Currently, this 1.1 to 1.6μ In(
JaAs, InGaAsP, (JaAISb, (JaA
There have been reports of m-v group compound semiconductor crystals such as dAsSb, (JaSb, etc.).For example, n'-J
A type II InGaAs layer is formed on the +lP substrate by Evita Yasi Yuru IJZ Changling, zinc or cadmium, etc.
There are many cases of FFl such as Mary type, which is caused by etching after the surface diffusion. Also, near l;4, p-h
By fabricating the film in InP, using In(JaA, S or InoaAs layer as the light absorption layer) and forming the avalanche I region in the L It L' layer, the low +
F17. Fluidization and high multiplication have been achieved, and the above-mentioned I
The aim is to form a guard ring in the nP layer to reliably prevent edge breakdown],
r+1. '-In()aAs-In'(1;+AC,l
11-1 as a brainer structure A P I) using yarn
1 junction is formed in the 1, n P layer, and by applying a reverse bias, the depletion layer is formed into a light absorbing layer of In(JaA, s
Alternatively, an example of spreading I n (J:q A-s into the P layer is disclosed in Japanese Patent Application No. 1983-39169, /l', 7
Application No. 124975 is clearly described in the document No. 111, and is an excellent ntt structure for achieving a low current of 11, but the structure described in the above-mentioned specification layer 1 alone is not enough to cause edge breakdown. There have been problems such as the limited range of d'1 volume that can prevent this. In addition, the patent application listed in the basic 1st q construction 1st knee 119. 1 nOaAs or L n (J aAsl) layer is used as the light absorption layer in the same 4jl as described in the above, but lnP
/l', Y
Application No. 56 206561 or Patent Application No. 57 00456
There are examples of FtC postings during the evening of the 6th specification. and J Shira's example, in both cases the guard ring area is],'
It is formed in the P layer. ”
【ηなガード
リング構造を有するＩ ｎ Ｐ層中にｐ−１１接合を有
する１ｎＰ−Ｊｎ（ＩａＡ、５−Ｊｎ（Ｊ、＋Ａｓｌ’
系Ａ Ｐｌ、） ｔＪ：、１・ψれた増倍、暗ｔ１偵ｂ
１れ特性等を有しているが、（−＋２４いイ空乏層がＬ
ｎ １．’層中から光吸収１． ｎ （Ｊ ；＋ Ａ
ｓ ｐｙるいｒｊ： １ ｎ Ｕ ａ Ａ、 ｓ Ｐ
層中に拡がる時点での容１４の外宮、あるいは光パルス
応答における立下り特性での遅い成分の存在等が指摘さ
れており、その一つの原因としては、上ｉ１ｒ； Ｉ
ｎ １．’層中に形成した（）−ｎ接合を有する而のＩ
Ｈ下以外のつまり横ひろがりを有するヘテロ接合に起因
した特性と考えられる。
本発明の目的はへゾロ接合形の各層の濃度を制御し、ガ
ードリングの構成を工夫することにより空乏層が逆バイ
アス印加によシヘデロ界面をよぎる時あるいは光励起キ
ャリアかへテロ界面を通過する場合等に起因した光応答
速度の劣化、あるいｔよ均一増倍の劣化等の影響を除去
したヘテロ接合形゛）Ｙ；検出器を１′Ｆ？供するもの
である。
すなわら本発明は最近の１ ｎ Ｉ’系での成長技術の
１（（！氷つまり高純度化技術を駆使することによシ、
Ｊ、 ＋＋ １’と比べると禁制帯幅の狭いＩｎ０ａＡ
ｓ中にガードリングを形成しで、ガードリング効果を有
−ｊ゛る４：）１することにより、ガードリング）７（
ｉによりガードリング内へテロ］〆合（」、ガードリン
グタ（ヘフ゛口接合と分ｔｒｒｔ＋されており、例えＩ
ＩＪ、’ ｐ−’−−ＩＩ接ｆ４は逆・・′、き−
イアス印加により、十ｎシ：ガードリング内ヘフーロ晰
合部のみを均一に拡がることに、しり高速応答１１’冒
ｌにが得られるようにしたものである。
本発明によると少くともｐｉ＜ １の導電型を示す第１
の２１６導体層上に前記第１の半導体層よシも禁制帯幅
が広くかつ前記第１０半樽休と同一の導電型を示す第２
の半導体層を有し１．１亥？ｌＩ２０半導体層を通り、
少くとも前記第１の半導体ｊ−に達する様に選択的にｐ
Ｈ接合を形成するガードリングと、該ガードリングにか
こまれた前ｎ１シ第２の半導体層領域中に選択的に片１
１１１階段接合に近いｌ） −Ｉ＋接合を有することを
特徴とするヘテｔ１接合形光検出器が得られ゛る。
次に本発明の一実施例を図面について説１明する。
図は本発明へテロ接合型光検出器の一実施例のＩｉ’を
断面図である。この実施例はＩ ｎ Ｐ−Ｉ ｎｃｌ
ａＡ ｓ４４月を用いたものであり、まず（Ｊ （１０
）面を有するｎ ” −１ｎ Ｐ基板１１の上にエピタ
キシＹル成長メツ９（例メーシ」、気相エビタギシャル
法）により１０μ！１１稈７７１：σ刀１．１． 、’
＞ ｃ不純物ｒｔ、”Ｐ度１〜２ Ｘ ｌ Ｏ” ｃｍ
＝の１１型］ ｏ １′Ｊ、ｊ′１１２ （Ｉ：形成タ
ー゛る。次に光の吸収層となる膜厚５μｍ不純物濃度１
×１０１５ｃｍ−３のｎ型Ｉｎ０．５３（１〜、４７Ａ
ＳＩ曽１３をエビクキシャル成長し、次に膜ノー１３．
５μ■不純物ｉ／＋’ｌｊ度ＲＸ ｌ （１” Ｃ１ｎ
’−３の＋１型ｌｎＰ層］４奮エビタ・＼・シ、Ｙル成
長する。
ゝ２
上記のよにし゛Ｃ作！ｌｌ’Ｊ Ｌ、たウェーハの表面
にスパッタあるいしよ、に Ｖ Ｉ）ｒ人等により５ｉ
ｎ２膜あるいは８ｉＮ膜を形成し、フォトレジスト・目
合せ工程等５Ｃ経し前記５ｉ（Ｊ□あるい＆ｊ： Ｓ
ｉ Ｎ膜を選択的にリング状に除去する。次にこのウェ
ーハを例えば亜、鉛金属を拡散υ１；１．として排気し
た閉管中に配し、：（５０’Ｏイ’ａ度の熱処理を施す
ことにより亜鉛の選１；＜拡ハ（を「ｔない、リング状
のＩｌｌ鉛の選択拡散Ｐ型領域１５を得る。ここで熱拡
散処理時間（１１２０時間程度行ないＰ型不純物として
のｊｌＩ−鉛の拡散領域の先１７ｉＡ助” ｌ’ｌｊＪ
記Ｊ、 ｎ ｏ、ｓ、 ＜３ ａ ｏ、４． Ａ ｓ層
１３中に十分達するよう配慮されている。
次に、内び前ＡＬ同様８ｉ０２あるいｒｉｓｉＮｌ模全
形成した後、開明！ｌｌＩ鉛拡散ｉｒ（域１５のリング
状外周μ内の領域の−１−記Ｓｔ、、あるいはＳ＋Ｎ膜
を・パ択的にノメトレジスト、目合ぜ工程笠により除去
する。この様なつ、ｒ−一・・を次に例えばＣ（１３Ｐ
ｇ を拡散源としてＪｕｌ気した閉管中に配し、５７０
’Ｏの高温において熱処理することによυカドミウムの
選択拡散を行ないカドミウムの拡散されたｐ−４−一１
１１ Ｐ領域１６ケ得る。ここで熱拡散時間は約１０分
であυ約１ ／１ ｒｎ深さのｐ−’−Ｉ ｎ Ｐ Ｉ
Ｉ １６を得ることができる。
ここで更に前１１Ｃ回イ子５ＩＯ２めるいはＳｉＮ膜〃
１７を形成した佐、 ’ｆｉ：極取り出し懇１８をフメ
トレジスト、目合せ工程等を用いて形成し、次にｐ型電
極１９を図に示すごとく前記窓１８を覆い且つ光の入射
窓を除くようにフメトレジスト、目合ぜ技術等によりリ
ング状忙形成する。次に＋１型電極２０をＩ ＩＩ Ｐ
基板１１に形成することにより本発明の一実施例のヘテ
ロ接合形光検出器が４好らｉする。）
次にこの実施例の−＼テロ接臼形光検出器の優れたゲｒ
６シに′ノいて１８１）、明する。図に示Ｊ゛ヘテロ阪
合形）’（、４６ｉ ＩＩＩｌｌ÷におい゛（］、内周
１００月１１．外周１５０μ田のリング状領域】５に朴
ける前記３５０υでの卯鉛金属拡散による１】１１図合
の深さは、前記Ｉｎｏ４１（Ｊ ＲＱ、４７ Ａｓ ｌ
、Ｊ １３中約１１１ＩＦまで遅しており、等ｔ′ｒｉ
Ｈ−？ｌｊ圧１Ｑｌｌ定によれば接合は傾斜接合形に近
似でへ、逆方向のブレークダウン１ｔｉ、圧も１．５０
Ｖ程度の／ｌ￥ １イトを示した。
次にこの様ｉ内周１００ ｆｉ出ブＪ−ドリンク１５と
同心の直径１２０１１ ｍの領域を５７０”ＣでＣＪＩ
Ｐ２を拡散源としだ力ドミウノ、の選４１り熱拡ハｔに
より１）−ｎ校ｒ合を前記１’、 ｎ Ｐ層１４中に１
． ｐｍ深さに形成する。
この４：「：にし゛Ｃ１作製したガードリング構造を有
イｆるヘテロ接合形光検出器のプレーダウン’＋１
ｊ、圧に１１２０ Ｖ）！ｒｉ度であり、極めて急峻な
ブレークダウンｌｒ庁性を示し、月つアバランシＩ増倍
率１００以上という、〜’ｆｉい値が１１）られ、波長
１．３ ｔｔ ｒｎ及び１．５５μＩＩＩの；１７：
、’、ｊ７．体し＝−リ゛のパルス、１タヘ動に↓る丸
パルスＡＬＬ、ｆマ’Ｉ’４？性としでも、立上り一’
ｒ： Ｆ ９時間長１０ ｎ ｓ ｃ （：以１−とい
う高速特性を示１７／ね。
尚、ここでｔ」、ｌｎｌ：’−Ｊ、ｎＧａＡｓの実）ｌ
＋ｉ例についで述べたが、Ｌｏｔ、’−Ｉｎ（ｌａＡ、
ｓＰｉ始めとするＧ ＲＡ ｓ 、 （］ ａ Ｓ ＋
３等のＩｌｌ −Ｖ族化合物半２！Ｉ・体にも適用でき
ることは汀うまでもない。またガードリング形成方法と
してべυリウム等のイオン注入技術を活用できること、
及びガードリング舶載の先端が前記した様な禁制帯幅の
狭い半導体層中にとど′まる必要はなく、突き抜けだ構
造も本発明の適用範囲であることｔＪ： 註う′までも
ない。
不発明によると以」―説明したように、光応答速度のす
ぐれた光検出器が得られる。[1nP-Jn(IaA, 5-Jn(J, +Asl'
System A Pl,) tJ:, 1 ψ multiplication, dark t1 rectification b
However, the (-+24) depletion layer is L
n1. 'Light absorption from inside the layer 1. n(J;+A
s pyrui rj: 1 n U a A, s P
It has been pointed out that the outer shell of the volume 14 at the time of spreading into the layer or the presence of a slow component in the falling characteristic of the optical pulse response is one of the causes.
n1. 'I with ()-n junction formed in the layer
This is considered to be a characteristic caused by a heterojunction other than under H, that is, having lateral expansion. The purpose of the present invention is to control the concentration of each layer of the heso-heterojunction type, and to devise the structure of the guard ring so that when the depletion layer crosses the hetero-interface due to the application of a reverse bias, or when photoexcited carriers pass through the hetero-interface. A heterojunction type that eliminates the effects of deterioration of optical response speed caused by factors such as deterioration of optical response speed, deterioration of uniform multiplication, etc. This is what we provide. In other words, the present invention is based on one of the recent growth techniques for the 1 n I' system.
In0aA, which has a narrow forbidden band width compared to J, ++ 1'
By forming a guard ring in s and having a guard ring effect4:)1, guard ring)7(
The guard ring is separated into the guard ring by the i, and the guard ring is separated by the guard ring.
IJ,'p-'--II contact f4 is reverse...',K-By applying ias, only the lucid junction in the guard ring is uniformly spread, and the high-speed response 11' is affected. It is designed so that it can be obtained. According to the present invention, the first conductivity type exhibiting at least pi<1
A second semiconductor layer is formed on the 216th conductor layer, which also has a wider forbidden band width than the first semiconductor layer and has the same conductivity type as the 10th semiconductor layer.
It has a semiconductor layer of 1.1? passing through the lI20 semiconductor layer,
p selectively so as to reach at least the first semiconductor j-
A guard ring forming an H-junction, and a piece 1 selectively formed in the first semiconductor layer region surrounded by the guard ring.
A heterojunction type photodetector is obtained which is characterized by having a l) -I+ junction close to a 111 step junction. Next, one embodiment of the present invention will be explained with reference to the drawings. The figure is a sectional view of Ii' of an embodiment of the heterojunction photodetector of the present invention. This example is I n P-I ncl
aA s44 month, first (J (10
) surface on an n''-1n P substrate 11 by epitaxy 9 (e.g., vapor phase epitaxial method). 11 Culm 771: σ sword 1.1. ,'
>c impurity rt, "P degree 1-2 X l O" cm
=11 type] o 1'J, j'112 (I: Formation start. Next, the film thickness is 5 μm, which becomes the light absorption layer, and the impurity concentration is 1.
×1015cm-3 n-type In0.53 (1~, 47A
SI So 13 was grown eviaxially, and then the film No. 13.
5μ ■ Impurity i/+'lj degree RX l (1" C1n
'-3's +1-type lnP layer] 4. Evita ＼ shi, Y le grows. 2. Written by C above! ll'J L, the surface of the wafer may be sputtered or otherwise 5i
After forming an n2 film or an 8iN film, and going through 5C steps such as photoresist and alignment, the above 5i (J□ or &j: S
The iN film is selectively removed in a ring shape. This wafer is then diffused with, for example, zinc or lead metal υ1;1. Placed in a closed pipe that was evacuated, heat treatment was performed at 50°C to form a ring-shaped selective diffusion P-type region 15 of lead. Here, the thermal diffusion treatment time (approximately 1120 hours is carried out) and the tip of the diffusion region of lead as a P-type impurity is 17iA.
Note J, no, s, <3 ao, 4. Care has been taken to ensure that it reaches sufficiently into the As layer 13. Next, after complete formation of 8i02 or risiNl as in Ubimae AL, Kaimei! llI lead diffusion ir (-1- St or S+N film in the area within the ring-shaped outer periphery μ of area 15 is selectively removed using a nometresist and an alignment step cap. ..., then, for example, C (13P
g as a diffusion source in a closed tube with 570 ml of air.
Selective diffusion of υ cadmium is performed by heat treatment at a high temperature of
11 Obtain 16 P areas. Here, the thermal diffusion time is about 10 minutes, and p-'-I n P I at a depth of about υ1/1 rn
I16 can be obtained. Here, the previous 11C times 5IO2 or SiN film
After forming the electrode 17, the electrode 18 is formed using a fumetresist, an alignment process, etc., and then the p-type electrode 19 is formed so as to cover the window 18 and exclude the light entrance window as shown in the figure. Then, a ring-shaped pattern is formed using fumetresist, alignment technology, etc. Next, the +1 type electrode 20 is
By forming the photodetector on the substrate 11, a heterojunction type photodetector according to an embodiment of the present invention can be obtained. ) Next, we will discuss the excellent characteristics of this example's -
6, 181), to clarify. As shown in the figure, J゛hetero-sintered type)' (, 46i IIIll ÷ odor゛(), inner circumference 100/11. outer periphery 150μ field ring-shaped area] 5 due to lead metal diffusion at 350υ) The depth of Figure 11 is the same as that of Ino41 (J RQ, 47 As l).
, J 13 is delayed to about 111IF, etc. t'ri
H-? According to the lj pressure 1Qll constant, the joint is approximated to an inclined joint type, the breakdown in the opposite direction is 1ti, and the pressure is also 1.50.
It showed /l￥1ite of about V. Next, CJI an area with a diameter of 12011 m concentric with the inner circumference 100 and the outer J-link 15 in this manner at 570"C.
By using P2 as a diffusion source and selecting thermal expansion t, the 1)-n concentration is set to 1', n in the P layer 14.
．． pm depth. This 4: Playdown of heterojunction photodetector with guard ring structure fabricated in C1 +1
j, pressure to 1120 V)! ri degree, exhibits an extremely steep breakdown LR property, has a ~'fi value of 100 or more avalanche I multiplication factor 11), and has a wavelength of 1.3 tt rn and 1.55 μIII; 17:
,',j7. The pulse of the output is -R, the round pulse is ↓ in the 1st movement, and the f ma'I'4? As a matter of fact, it's just a matter of time
r: F 9 time length 10 n s c (: shows the high-speed characteristics of 1-. Here, t', lnl:'-J, the fruit of nGaAs) l
I mentioned the +i example, but Lot,'-In(laA,
sPi and other GRA s, (] a S +
Ill-V group compound half number 3 etc. 2! It goes without saying that this can also be applied to the I-body. In addition, ion implantation technology such as beryllium can be used as a guard ring formation method.
There is no need to note that the tip of the guard ring does not need to remain in the semiconductor layer with a narrow forbidden band width as described above, and a penetrating structure is also within the scope of the present invention. According to the invention, as explained above, a photodetector with excellent optical response speed can be obtained.
図は（（発明のヘテロ接合形光検出器の一実施例の断面
図である。
１１・・・・・・０士型（１００）面を有するＩ ｎ
Ｉ’基板・１２・・・・・・ｚｌ型Ｉ ｎ Ｐエビタキ
シャノＬ；層、１３・・団・！１型Ｉ ＩＩｏ、 Ｉｔ
ｓ （−１８ｏ、４７ Ａ ８層、１４・・・・・冒１
型Ｊ、 Ｉｔ Ｌ’ Ｉ？１．１５・・・・・・不純物
拡散技術１１１により選択的に作製したｐ型Ｉ ｎ ｔ
’及びＩ ｎＯ，ｉ＊ （Ｊ ’１０．４７ Ａ ｓ層
、１６・・団・ｐ型不純物を拡散したｐ十型Ｉ ｎ Ｐ
層領域、１７・・・・・・Ｓ１０！あるいをま８ｉＮ％
１８・・・・・・電極用窓、１９・・・・・・ｐ型電型
、２０・・印・ＩＩ型電極。The figure is a cross-sectional view of an embodiment of the heterojunction photodetector of the invention.
I' substrate・12・・・・zl type I n P shrimp taxano L; layer, 13・・group・! Type 1 IIo, It
s (-18o, 47 A 8 layers, 14... 1
Type J, It L' I? 1.15...p-type I n t selectively produced by impurity diffusion technology 111
' and I nO,i* (J '10.47 A s layer, 16...group p-type I n P with p-type impurity diffused
Layer area, 17...S10! Aioma8iN%
18...Window for electrode, 19...P type electrode, 20...Mark II type electrode.
Claims (1)
層を有し、該第２の半導体層を通り、少くとも前１１巾
ｆ目の半導体層に達する様に選択的に■）へ接合を形成
する１／−Ｆリングと、該ガードリングにかこまれた前
記第２０半２メト体層領域中に選択的に片側階１々Ｊａ
合に近い＋１−ＩＩ Ｍ自を有することを特徴とする−
、プロ接合形光検出器。It has a second semiconductor layer exhibiting the same conductor 11f and type as the first semiconductor, and selectively passes through the second semiconductor layer and reaches at least the front 11th width f semiconductor layer. a 1/-F ring forming a joint to the guard ring, and selectively inserting one floor on one side in the 20th half 2nd body layer region surrounded by the guard ring.
- is characterized by having +1-II M self close to
, professional junction photodetector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57139028A JPS5928391A (en) | 1982-08-10 | 1982-08-10 | Hetero-junction type photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57139028A JPS5928391A (en) | 1982-08-10 | 1982-08-10 | Hetero-junction type photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5928391A true JPS5928391A (en) | 1984-02-15 |
Family
ID=15235774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57139028A Pending JPS5928391A (en) | 1982-08-10 | 1982-08-10 | Hetero-junction type photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5928391A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58198288A (en) * | 1982-10-08 | 1983-11-18 | Chiyoda Chem Eng & Constr Co Ltd | Particles for adhering microorganism |
| US5010381A (en) * | 1989-08-24 | 1991-04-23 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor light receiving element |
| US5962309A (en) * | 1997-01-14 | 1999-10-05 | Tsutsunaka Plastic Industry Co., Ltd. | Extruded foamed polyolefin resin carrier for microorganisms in a fluidized bed |
| WO2019211968A1 (en) * | 2018-05-02 | 2019-11-07 | ソニーセミコンダクタソリューションズ株式会社 | Solid-state image pick-up element and image pick-up device |
| CN113707763A (en) * | 2021-08-26 | 2021-11-26 | 厦门理工学院 | Preparation method of planar InGaAs/InP APD photoelectric detector |
-
1982
- 1982-08-10 JP JP57139028A patent/JPS5928391A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58198288A (en) * | 1982-10-08 | 1983-11-18 | Chiyoda Chem Eng & Constr Co Ltd | Particles for adhering microorganism |
| JPH0242473B2 (en) * | 1982-10-08 | 1990-09-21 | Chiyoda Chem Eng Construct Co | |
| US5010381A (en) * | 1989-08-24 | 1991-04-23 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor light receiving element |
| US5962309A (en) * | 1997-01-14 | 1999-10-05 | Tsutsunaka Plastic Industry Co., Ltd. | Extruded foamed polyolefin resin carrier for microorganisms in a fluidized bed |
| WO2019211968A1 (en) * | 2018-05-02 | 2019-11-07 | ソニーセミコンダクタソリューションズ株式会社 | Solid-state image pick-up element and image pick-up device |
| US11769782B2 (en) | 2018-05-02 | 2023-09-26 | Sony Semiconductor Solutions Corporation | Solid-state imaging element and imaging apparatus |
| CN113707763A (en) * | 2021-08-26 | 2021-11-26 | 厦门理工学院 | Preparation method of planar InGaAs/InP APD photoelectric detector |
| CN113707763B (en) * | 2021-08-26 | 2023-10-31 | 厦门理工学院 | Preparation method of planar InGaAs/InP APD photoelectric detector |
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