JPS5923404B2 - Corrosion-resistant transparent conductive film formation method - Google Patents
Corrosion-resistant transparent conductive film formation methodInfo
- Publication number
- JPS5923404B2 JPS5923404B2 JP12431678A JP12431678A JPS5923404B2 JP S5923404 B2 JPS5923404 B2 JP S5923404B2 JP 12431678 A JP12431678 A JP 12431678A JP 12431678 A JP12431678 A JP 12431678A JP S5923404 B2 JPS5923404 B2 JP S5923404B2
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- corrosion
- transparent conductive
- resistant transparent
- film formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Liquid Crystal (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing Of Electric Cables (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Surface Treatment Of Glass (AREA)
- Physical Vapour Deposition (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Description
【発明の詳細な説明】
本発明は、耐蝕性の透明導電膜を形成する方法に関する
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of forming a corrosion-resistant transparent conductive film.
例えば液晶表示装置に用いる透明なガラスまたはプラス
チックプレートの表面に透明で耐蝕性のある導電膜を形
成する必要がある場合、従来は、酸化インジウム、酸化
錫等の金属をスパッタリングにより透明なプレート上に
付着させていた。For example, when it is necessary to form a transparent, corrosion-resistant conductive film on the surface of a transparent glass or plastic plate used in a liquid crystal display device, conventionally, a metal such as indium oxide or tin oxide is sputtered onto the transparent plate. It was attached.
ところで、上記酸化インジウムや酸化錫よりも二酸化チ
タンＴｉ０２を使用する方が、耐蝕性も高く望ましいと
考えられてきたが、二酸化チタンは１０００λの膜で約
５０〜１００にΩ／ｄ以上の高い抵抗値をもつことと、
再元性が悪く、さらに抵抗値のばらつきも大きいなどの
点から、実用化は困難とされてきた。本発明は、この問
題を解決し、二酸化チタンを使用しながら抵抗値が低く
、かつそのばらつきも少い耐蝕性透明導電膜を得る方法
を提供することを目的とする。Incidentally, it has been thought that it is more desirable to use titanium dioxide Ti02 than the above-mentioned indium oxide or tin oxide because of its high corrosion resistance, but titanium dioxide has a high resistance of about 50 to 100Ω/d or more in a 1000λ film. having a value and
Practical implementation has been considered difficult due to poor reproducibility and large variations in resistance values. An object of the present invention is to solve this problem and provide a method for obtaining a corrosion-resistant transparent conductive film that uses titanium dioxide and has a low resistance value and small variations in resistance value.
この目的は、本発明によれば、二酸化チタンＴｉＯ２、
に、１〜１０重量パーセントの五酸化タンタルＴａ０５
を加えた材料をターゲットとしてスパッタリングするこ
とにより達成される。This purpose is achieved according to the invention by titanium dioxide TiO2,
1 to 10 weight percent of tantalum pentoxide Ta05
This is achieved by sputtering using a target material with added .
二酸化チタンＴｉＯ２に種々の重量パーセントの五酸化
タンタルＴａＯ５を加えた材料をターゲットとして厚さ
１０００λの導電膜を形成した場合における導電膜の電
気抵抗値を測定し、これをプロットして曲線で結んだグ
ラフを第１図に示す。The electrical resistance value of the conductive film was measured when a conductive film with a thickness of 1000λ was formed using a material containing titanium dioxide TiO2 and various weight percentages of tantalum pentoxide TaO5 as a target, and the values were plotted and connected by a curve. The graph is shown in Figure 1.
このグラフにおいて、五酸化タンタルの重量パーセント
が１％未満では実測抵抗値はグラフに示した曲線に対し
てかなりのばらつきを示した。一方、五酸化タンタルの
重量パーセントが１０％を超えると、抵抗値は同様に曲
線に対してかなりのばらつきを示した。しかしながら、
同重量パーセントが１ないし１０％の範囲Ｓでは、プロ
ット値はほとんど同曲線上に位置しており、ばらつきは
見られなかつた。この事実は、与えられた電気抵抗値を
もつ薄膜を、五酸化タンタルの重量パーセントを予め選
択することによつて得ることができることを意味する。
そして、範囲ｓ内では、他の数値範囲におけるよりも薄
膜の抵抗値はかなり低く、ほぼ６重量パーセント付近で
最低値をとる。周知のように、スパッタリングはアルゴ
ンガス等の不活性ガスの低圧雰囲気中に試料および陰極
としてのターゲットを位置させて行なう。実験によれば
、雰囲気ガスとしてアルゴンＡｒを用い、これに対し酸
素ガス０２を適当量加えた場合に好ましい結果が得られ
ることが判明した。その結果を、横軸に酸素分圧のパー
セントを縦軸に薄膜の電気抵抗をとつた第２図のグラフ
に示す。In this graph, when the weight percent of tantalum pentoxide was less than 1%, the measured resistance values showed considerable variation with respect to the curve shown in the graph. On the other hand, when the weight percent of tantalum pentoxide exceeded 10%, the resistance values similarly showed considerable variation over the curves. however,
In the range S where the weight percent was 1 to 10%, the plotted values were almost on the same curve, and no variation was observed. This fact means that a thin film with a given electrical resistance value can be obtained by preselecting the weight percentage of tantalum pentoxide.
Within the range s, the resistance value of the thin film is considerably lower than in other numerical ranges, reaching a minimum value around 6 weight percent. As is well known, sputtering is performed by positioning a sample and a target serving as a cathode in a low-pressure atmosphere of an inert gas such as argon gas. According to experiments, it has been found that favorable results can be obtained when argon is used as the atmospheric gas and an appropriate amount of oxygen gas 02 is added thereto. The results are shown in the graph of FIG. 2, with the percentage of oxygen partial pressure on the horizontal axis and the electrical resistance of the thin film on the vertical axis.
このグラフから明らかなように、アルゴンと酸素の混合
気の全圧に対して酸素の分圧が０．１ないし１０％であ
る範囲Ｔ内では低い抵抗値が得られ、特に４（ｆｌ）の
近傍では最も低い値が得られる。よつて、第１図および
第２図における最低抵抗値附近の重量パーセントおよび
分圧パーセントを採用することによつて最も低い抵抗値
の導電膜が得られることになる。なお、酸素分圧につい
ては、スパツタリングに際しての成膜速度によつて多少
変化が生じ、特に成膜速度が小さい場合には酸素の添加
に代えて装置内に存在するＨ２Ｏが酸素を添加したと同
じ結果をまねいて同様な効果をもたらす。As is clear from this graph, a low resistance value is obtained within the range T where the partial pressure of oxygen is 0.1 to 10% of the total pressure of the argon-oxygen mixture, and especially at 4 (fl). The lowest value is obtained in the neighborhood. Therefore, by adopting the weight percentage and partial pressure percentage near the lowest resistance value in FIGS. 1 and 2, a conductive film with the lowest resistance value can be obtained. Note that the oxygen partial pressure will vary somewhat depending on the film formation rate during sputtering, and in particular when the film formation rate is low, the oxygen partial pressure will be replaced by H2O present in the apparatus instead of adding oxygen, which is the same as adding oxygen. Copying results and producing similar effects.
したがつて、本発明の方法によれば、従来、実用化が困
難と考えられていた二酸化チタンによる耐蝕性透明導電
膜を希望の抵抗値をもつように形成でき、製品は抵抗値
が低く、良好な耐蝕性透明導電膜を具えるなどの優れた
効果が得られる。Therefore, according to the method of the present invention, a corrosion-resistant transparent conductive film made of titanium dioxide, which has been thought to be difficult to put into practical use, can be formed to have a desired resistance value, and the product has a low resistance value. Excellent effects such as a transparent conductive film with good corrosion resistance can be obtained.
第１図は、ターゲツト材料への五酸化タンタルの添加量
と導電膜の抵抗値との関係を示す特性線図、第２図は、
雰囲気ガスへの酸素の添加量と導電膜抵抗値の関係を示
す特性線図であり、いずれも膜厚１０００λにおける実
測値のプロツトによつて得られた曲線を示す。Figure 1 is a characteristic diagram showing the relationship between the amount of tantalum pentoxide added to the target material and the resistance value of the conductive film.
FIG. 2 is a characteristic diagram showing the relationship between the amount of oxygen added to the atmospheric gas and the resistance value of the conductive film, both of which are curves obtained by plotting actual measured values at a film thickness of 1000λ.
Claims (1)
ーセントの五酸化タンタル（Ｔａ＿２Ｏ＿５）を添加し
た材料をターゲットとしてスパツタリングにより成膜す
ることよりなる耐蝕性透明導電膜形成方法。 ２ アルゴンガス中に０．１ないし１０％の分圧をもつ
ように酸素ガスを添加した雰囲気中でスパツタリングを
行なうことよりなる特許請求の範囲第１項記載の耐蝕性
透明導電膜形成方法。[Claims] 1. A method for forming a corrosion-resistant transparent conductive film, which comprises forming a film by sputtering using a material in which 1 to 10 weight percent of tantalum pentoxide (Ta_2O_5) is added to titanium dioxide (TiO_2) as a target. 2. The method for forming a corrosion-resistant transparent conductive film according to claim 1, which comprises performing sputtering in an atmosphere in which oxygen gas is added to argon gas to have a partial pressure of 0.1 to 10%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12431678A JPS5923404B2 (en) | 1978-10-09 | 1978-10-09 | Corrosion-resistant transparent conductive film formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12431678A JPS5923404B2 (en) | 1978-10-09 | 1978-10-09 | Corrosion-resistant transparent conductive film formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5550221A JPS5550221A (en) | 1980-04-11 |
| JPS5923404B2 true JPS5923404B2 (en) | 1984-06-01 |
Family
ID=14882304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12431678A Expired JPS5923404B2 (en) | 1978-10-09 | 1978-10-09 | Corrosion-resistant transparent conductive film formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5923404B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0797928B2 (en) * | 1988-06-03 | 1995-10-25 | 井関農機株式会社 | Rolling equipment for mobile farm work machines |
| JPH07114585B2 (en) * | 1988-06-17 | 1995-12-13 | 井関農機株式会社 | Horizontal control device for paddy farm machinery |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6145645U (en) * | 1984-08-30 | 1986-03-26 | 臼井国際産業株式会社 | Torsional vibration damper |
| JPH0160054U (en) * | 1987-10-12 | 1989-04-17 | ||
| JPH0519700U (en) * | 1991-08-28 | 1993-03-12 | 株式会社フコク | damper |
| US7214295B2 (en) | 2001-04-09 | 2007-05-08 | Vishay Dale Electronics, Inc. | Method for tantalum pentoxide moisture barrier in film resistors |
| JP5173512B2 (en) * | 2008-03-25 | 2013-04-03 | 財団法人神奈川科学技術アカデミー | Conductor and manufacturing method thereof |
-
1978
- 1978-10-09 JP JP12431678A patent/JPS5923404B2/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0797928B2 (en) * | 1988-06-03 | 1995-10-25 | 井関農機株式会社 | Rolling equipment for mobile farm work machines |
| JPH07114585B2 (en) * | 1988-06-17 | 1995-12-13 | 井関農機株式会社 | Horizontal control device for paddy farm machinery |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5550221A (en) | 1980-04-11 |
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