JPS59231814A - レジストパタ−ン形成方法及びレジスト処理装置 - Google Patents

レジストパタ−ン形成方法及びレジスト処理装置

Info

Publication number
JPS59231814A
JPS59231814A JP58106173A JP10617383A JPS59231814A JP S59231814 A JPS59231814 A JP S59231814A JP 58106173 A JP58106173 A JP 58106173A JP 10617383 A JP10617383 A JP 10617383A JP S59231814 A JPS59231814 A JP S59231814A
Authority
JP
Japan
Prior art keywords
resist
temperature
substrate
cooling
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58106173A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0465525B2 (enrdf_load_stackoverflow
Inventor
Kei Kirita
桐田 慶
Yoshihide Kato
加藤 芳秀
Toshiaki Shinozaki
篠崎 俊昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58106173A priority Critical patent/JPS59231814A/ja
Publication of JPS59231814A publication Critical patent/JPS59231814A/ja
Publication of JPH0465525B2 publication Critical patent/JPH0465525B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP58106173A 1983-06-14 1983-06-14 レジストパタ−ン形成方法及びレジスト処理装置 Granted JPS59231814A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58106173A JPS59231814A (ja) 1983-06-14 1983-06-14 レジストパタ−ン形成方法及びレジスト処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58106173A JPS59231814A (ja) 1983-06-14 1983-06-14 レジストパタ−ン形成方法及びレジスト処理装置

Publications (2)

Publication Number Publication Date
JPS59231814A true JPS59231814A (ja) 1984-12-26
JPH0465525B2 JPH0465525B2 (enrdf_load_stackoverflow) 1992-10-20

Family

ID=14426856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58106173A Granted JPS59231814A (ja) 1983-06-14 1983-06-14 レジストパタ−ン形成方法及びレジスト処理装置

Country Status (1)

Country Link
JP (1) JPS59231814A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0465525B2 (enrdf_load_stackoverflow) 1992-10-20

Similar Documents

Publication Publication Date Title
KR860002082B1 (ko) 레지스트 패턴의 형성 방법 및 장치
US5716763A (en) Liquid immersion heating process for substrate temperature uniformity
JPH0546091B2 (enrdf_load_stackoverflow)
JPS60176236A (ja) レジスト処理装置
JPS59231814A (ja) レジストパタ−ン形成方法及びレジスト処理装置
JPH0480531B2 (enrdf_load_stackoverflow)
JPS59132618A (ja) レジストパタ−ンの形成方法及びその装置
JPS60117626A (ja) レジストパタ−ンの形成方法及びレジスト処理装置
JPS6189632A (ja) レジストパタ−ンの形成方法
JPS59231813A (ja) レジストパタ−ン形成方法及びレジスト処理装置
JPS59132128A (ja) レジストパタ−ンの形成方法及び装置
JP3626284B2 (ja) マスク基板の熱処理方法とその装置
JPH0586642B2 (enrdf_load_stackoverflow)
JPS61147528A (ja) レジスト処理装置
JPS60178626A (ja) レジストパタ−ン形成方法及びレジスト処理装置
JPS60157224A (ja) レジストパタ−ンの形成方法及びレジスト処理装置
EP0185366B1 (en) Method of forming resist pattern
JPS60157222A (ja) レジストパタ−ン形成方法及びレジスト処理装置
JPS60157223A (ja) レジストパタ−ンの形成方法及びレジスト処理装置
JPH0464171B2 (enrdf_load_stackoverflow)
JPS60117625A (ja) レジストパタ−ンの形成方法及びレジスト処理装置
JPS60157225A (ja) レジストパタ−ン形成方法
JPS61180438A (ja) レジスト処理装置
JPS61147527A (ja) レジストパタ−ンの形成方法
JPS59132619A (ja) レジストパタ−ンの形成方法及びその装置