JPS59229816A - Vapor growth apparatus for compound semiconductor - Google Patents
Vapor growth apparatus for compound semiconductorInfo
- Publication number
- JPS59229816A JPS59229816A JP10426283A JP10426283A JPS59229816A JP S59229816 A JPS59229816 A JP S59229816A JP 10426283 A JP10426283 A JP 10426283A JP 10426283 A JP10426283 A JP 10426283A JP S59229816 A JPS59229816 A JP S59229816A
- Authority
- JP
- Japan
- Prior art keywords
- tube
- reaction tube
- group
- gas
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、化合物半導体の気相成長技術に係わシ、特に
複数の■−ｖ族化合物半導体層を積層形成するのに適し
た化合物半導体の気相成長装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a compound semiconductor vapor phase growth technique, and particularly relates to a compound semiconductor vapor growth technique suitable for stacking a plurality of ■-v group compound semiconductor layers. Regarding a vapor phase growth apparatus.
近時、化合物半導体を用いた各種の新機能素子が研究開
発されておシ、その中の一例としてＩｎＧａＡａＰ Ｊ
元混合系を用いた半導体レーデがある。この半導体レー
ザを作製する場合、結晶基板としてＮ型ＩｎＰ基板を用
い、その上にＮ型ＩｎＰ層（クラッド層）、ＩｎＧａＡ
ｓＰ層（活性層）。Recently, various new functional devices using compound semiconductors have been researched and developed, one example of which is InGaAaP J
There is a semiconductor radar using an original mixed system. When manufacturing this semiconductor laser, an N-type InP substrate is used as a crystal substrate, and an N-type InP layer (cladding layer), an InGaA
sP layer (active layer).
Ｐ型ＩｎＰ層（クラ、ド層）及びＰ型ＩｎＧａＡｓＰ層
（オーミック層）等を成長させ、所謂ＤＨ（ダブルへテ
ロ）接合構造を形成するのは周知のことである。そして
、上記各成長層を形成するには、従来法のような装置が
用いられている。It is well known that a so-called DH (double heterojunction) structure is formed by growing a P-type InP layer (cladding layer) and a P-type InGaAsP layer (ohmic layer). In order to form each of the growth layers described above, an apparatus similar to a conventional method is used.
第１図はＨＣＡ ／ ＰＨ３／ ＡｓＨ３／ Ｇａ ／
Ｉｎ ／ Ｈ２系のＩｎＧａＡｓＰ ４元混晶気相成
長装置の概略構成を示す断面図である。図中１は炉加熱
体、２は石英製反応管であり、反応管２内には基板支持
具３が設置されている。基板支持具３の上面には凹状の
溝部３ａが設けられておシ、この溝部３ａ内にＩｎＰ基
板４が収納される。また、基板支持具３の上面には、操
作棒５に連結されたスライドカバー６が設置されている
。そして、スライドカバー６の移動によｐ、ＩｎＰ基板
４と反応管２内のガス流雰囲気とが接触或いは隔離され
るものとなっている。なお、図中矢印はガス流を示して
おシ、反応管２の左方がガス流上流側、右方がガス流下
流側である。Figure 1 shows HCA / PH3 / AsH3 / Ga /
1 is a cross-sectional view showing a schematic configuration of an In/H2-based InGaAsP quaternary mixed crystal vapor phase growth apparatus. In the figure, 1 is a furnace heating body, 2 is a quartz reaction tube, and a substrate support 3 is installed inside the reaction tube 2. A concave groove 3a is provided on the upper surface of the substrate support 3, and the InP substrate 4 is accommodated in the groove 3a. Furthermore, a slide cover 6 connected to the operating rod 5 is installed on the upper surface of the board support 3. By moving the slide cover 6, the InP substrate 4 and the gas flow atmosphere within the reaction tube 2 are brought into contact with each other or isolated from each other. Note that arrows in the figure indicate gas flows; the left side of the reaction tube 2 is the upstream side of the gas flow, and the right side is the downstream side of the gas flow.
上記構成の気相成長装置を用いた結晶成長は、以下のよ
うにして行われる。まず、基板支持具３の凹部にＩｎＰ
基板４を配置し、スライドカバー６をガス流下流側に引
き、ガス流雰囲気とＩｎＰ基板４とが接触する状態にす
る。次に、反応管２の昇温過程中、その内部温度がＩｎ
Ｐ基板４の熱劣化を起こす前に、ガス流上流側から既に
導入されているキャリア水素ガスにリン水素ガスを混入
させることによｊ）、ＩｎＰ基板４に所望のリン圧を印
加する。その後、ＩｎＰ基板４の周囲温度が結晶成長可
能な温度に達した時点で、スライドカバー６をガス流上
流側に移動し溝部３＆ｆ、覆う。これと同時に、ガス流
上流側から塩化インジウム、リン水素化合物等の気体状
原料を、キャリアガスである水素によシ基板支持具３の
設置されている結晶析出領域Ｐに運び、気体状原料及び
水素ガスが定常状態になるまで待つ。Crystal growth using the vapor phase growth apparatus having the above configuration is performed as follows. First, InP is placed in the recess of the substrate support 3.
The substrate 4 is placed, and the slide cover 6 is pulled downstream of the gas flow to bring the gas flow atmosphere into contact with the InP substrate 4. Next, during the temperature rising process of the reaction tube 2, the internal temperature becomes In
Before thermal deterioration of the P substrate 4 occurs, a desired phosphorus pressure is applied to the InP substrate 4 by mixing phosphorous hydrogen gas into the carrier hydrogen gas already introduced from the upstream side of the gas flow. Thereafter, when the ambient temperature of the InP substrate 4 reaches a temperature that allows crystal growth, the slide cover 6 is moved upstream of the gas flow to cover the grooves 3&f. At the same time, gaseous raw materials such as indium chloride and phosphorus hydrogen compounds are transported from the upstream side of the gas flow to the crystal precipitation region P where the substrate support 3 is installed, using hydrogen as a carrier gas, and the gaseous raw materials and Wait until the hydrogen gas reaches a steady state.
気体状原料及び水素ガスが定常状態に達した−のみで気
相成長用気体原料を完全にパージする。Only when the gaseous raw material and hydrogen gas have reached a steady state, the gaseous raw material for vapor phase growth is completely purged.
かくして、１つの気相成長層を得たのちは、各各の結晶
の熱劣化防止に見合った種類のガスを反応管２内の結晶
析出領域に送シ込んで熱劣化防止対策を施し、各々の結
晶成長に必要な気相成長装置科を上記領域に送シ込み、
前記と同様の操作を施すことによ多、組成比若しくは種
類の異なる気相成長層が順次多層成長することになる。In this way, after one vapor phase growth layer is obtained, a type of gas suitable for preventing thermal deterioration of each crystal is sent into the crystal precipitation region in the reaction tube 2 to take measures to prevent thermal deterioration, and We will send the vapor phase growth equipment necessary for crystal growth to the above area,
By carrying out operations similar to those described above, multiple vapor phase growth layers having different composition ratios or types are successively grown.
しかしながら、この種の従来装置を用いる場合にあって
は、次の（１）、（２）のような問題があった。However, when using this type of conventional device, there are problems such as the following (1) and (2).
（１） 気相成長を施すとき、基板だけでなく結晶析
出領域の反応管内壁にも結晶の析出が生じ、熱劣化防止
用の水素化物がとの管壁析出を助長する。そして、この
管壁析出物７は気相成長層の組成や再現性等の不安定化
、成長速度の著し部のＨＣｌ量を増やして行うために、
ＨＣｌを定常量まで戻すのに長時間を要し作業性の低下
を招く。(1) When vapor phase growth is performed, crystals are precipitated not only on the substrate but also on the inner wall of the reaction tube in the crystal precipitation region, and hydrides for preventing thermal deterioration promote the precipitation on the tube wall. In order to prevent this tube wall precipitate 7 from destabilizing the composition and reproducibility of the vapor phase growth layer, and by increasing the amount of HCl in the areas where the growth rate is significant,
It takes a long time to return HCl to a constant level, resulting in a decrease in work efficiency.
〔発明の目的）
本発明の目的は、管壁析出物による悪影響を防止し、異
なる化合物半導体結晶層を容易がつ再現性良く多層に気
相成長させることができ、さらに各成長層間の遷移領域
幅を極めて狭くし得る化合物半導体の気相成長装置を提
供することにある。[Object of the Invention] The object of the present invention is to prevent the adverse effects of tube wall precipitates, to easily and reproducibly grow different compound semiconductor crystal layers in multiple layers, and to further improve the transition region between each growth layer. An object of the present invention is to provide a compound semiconductor vapor phase growth apparatus that can be extremely narrow in width.
本発明の骨子は、管壁析出物の存在領域によシガス流上
流側で気相成長を行い、ガスエツチング工程を省略して
も管壁析出物による悪影響を回避することにある。The gist of the present invention is to perform vapor phase growth on the upstream side of the gas flow in the region where the tube wall precipitates exist, and to avoid the adverse effects of the tube wall precipitates even if the gas etching step is omitted.
すなわち本発明は、反応管内に原料ガスを導１−１ミし
、■族金属の塩化物と■原ガスとを用いた１□：気相開
管法によシ半導体基板上に２種以上の、″ □
・−゛・＝町−ｖ族化合物半導体層を成長させる化合物
半波側にその一端が配置され上記支持具近傍にＶ原ガス
を導入する■原ガス導入管等を１つの結晶層成長毎に反
応管内のガス流上流側に所定距離だけ一体的に移動せし
めると共に、この移動に同期して上記支持具近傍を一定
状態に加熱するようにしたものである。That is, the present invention introduces a raw material gas into a reaction tube, and uses a chloride of a group metal and a raw gas. `` □ ・-゛・= Town - One end of which is placed on the half-wave side of the compound for growing the V group compound semiconductor layer, and the V source gas is introduced near the support tool. Each time the layer grows, it is moved integrally by a predetermined distance to the upstream side of the gas flow in the reaction tube, and in synchronization with this movement, the vicinity of the support is heated to a constant state.
本発明によれば、炉加熱体、■族金属ソースポート、■
原ガス導入管及び基板支持具等を各各反応管内部ガス流
上流側へ移動できる構成としているので、気相成長工程
毎に生ずる管壁析出物のある領域よりも絶えずガス流上
流側（管壁析出物の無い領域）で新たな気相成長を施す
ことが可能となる。したがって、ガスエツチング工程を
省略しても管壁析出物の影響上受けないことになシ、そ
の結果として各成長層の組成）成長速度及び再現性の安
定化向上をはかシ得、また各成長層間に於ける遷移領域
幅を狭くすることができる。このため、半導体レーザの
製造等に適用して絶大なる効果を発揮する。According to the present invention, a furnace heating body, a group metal source port, and a
Since the raw gas inlet pipe, substrate support, etc. are configured to be able to move upstream of the gas flow inside each reaction tube, they are constantly moved upstream of the gas flow (tube It becomes possible to carry out new vapor phase growth in areas (areas where there are no wall precipitates). Therefore, even if the gas etching process is omitted, it will not be affected by the tube wall precipitates, and as a result, the growth rate (composition) and reproducibility of each growth layer will be stabilized and improved. The width of the transition region between grown layers can be narrowed. Therefore, it can be applied to the production of semiconductor lasers, etc., and exhibits great effects.
第２図（、）〜（ｃ）は本発明の一実施例に係わる気相
成長装置を説明するためのもので第２図（、）はその概
略構成を示す模式図、第２図（ｂ）は要部構成を示す断
面図、第２図（ｃ）は同図（ｂ）の矢視Ａ−Ａ断面図で
ある。なお、第１図と同一部分には同一符号を付して、
その詳しい説明は省略する。Figures 2 (,) to (c) are for explaining a vapor phase growth apparatus according to an embodiment of the present invention. Figure 2 (,) is a schematic diagram showing its schematic structure, and Figure 2 (b ) is a cross-sectional view showing the configuration of the main parts, and FIG. 2(c) is a cross-sectional view taken along arrow A-A in FIG. 2(b). The same parts as in Fig. 1 are given the same reference numerals.
A detailed explanation thereof will be omitted.
この実施例が第１図に示した従来装置と異なる点は、炉
加熱体、基板支持具、■族金属ソースが一ト及び■原ガ
ス導入管等を反応管の軸方向に対して平行移動できる構
成としたことにある、すなわち、反応管２の外側には移
動可能な炉加熱体１が配置され、反応管２内には基板支
持具３、■族金属ソースポードｅ、Ｖ原ガス導入管１１
及び■族金属ソースポート保護管１５が配置されている
。そして、これら支持具３、ソースが一ト８、導入管１
１及び保護管１５は連結棒１０に取着されておシ、連結
棒１０ｆ反応管２の外部から操作することによシ反応管
２の軸方向に平行移動するものとなっている。また、保
護管１５には、その内部に■族金属ソースポート８／が
配置されると共に、ＨＣ６／［２導入管１４′が連結さ
れている。ここで、ソースデート８内にはインジウムメ
タル９が充填され、ソースが一ト８／内にはガリウムメ
タル９′が充填されている。なお、図中１２は反応管導
入管、１３゜１３′は導入管１１ 、１４’を滑らかに
移動するためのシール、１４はＨＣ１／Ｈ２導入管、１
６は反応管導入管をそれぞれ示している。また、上記炉
加熱体１は連結棒１ｏの移動に伴い上記支持具３、ソー
スポード８，８′導入管Ｊ １ 、１４’及び保護管１
５と一体的に移動するものとなっている。This embodiment differs from the conventional apparatus shown in Fig. 1 in that the furnace heating element, substrate support, group metal source (1) are moved in parallel to the axial direction of the reaction tube, and (2) the source gas introduction tube is moved parallel to the axial direction of the reaction tube. That is, a movable furnace heating element 1 is disposed outside the reaction tube 2, and inside the reaction tube 2 there are a substrate support 3, a group Ⅰ metal source port e, and a V source gas introduction tube. 11
and a group Ⅰ metal source port protection tube 15. These supports 3, a source 8, and an introduction pipe 1
1 and the protective tube 15 are attached to the connecting rod 10, and the connecting rod 10f is moved in parallel in the axial direction of the reaction tube 2 by operating it from outside the reaction tube 2. In addition, the protective tube 15 has a group Ⅰ metal source port 8/ disposed therein, and is connected to the HC6/[2 inlet pipe 14'. Here, the source date 8 is filled with indium metal 9, and the source date 8/ is filled with gallium metal 9'. In the figure, 12 is a reaction tube introduction tube, 13° 13' is a seal for smooth movement of the introduction tubes 11 and 14', 14 is an HC1/H2 introduction tube, 1
Reference numeral 6 indicates a reaction tube introduction tube. Further, as the connecting rod 1o moves, the furnace heating body 1 is moved to the support 3, the source ports 8, 8', the introduction tubes J1, 14', and the protective tube 1.
It moves together with 5.
次に、上記構成の本装置を用いた気相成長方法を、第３
図（、）〜（ｄ）を参照して説明する。なお、第３図（
、）〜（ｃ）は炉加熱体１及び基板支持具３等の位置を
示す模式図、同図（ｄ）は反応炉内温度プルファイルを
示す模式図である。また、ここではＩ ｎＰ／Ｉ ｎＧ
ａＡｓＰ／Ｉ ｎＰ基板の３層構造の例について説明す
る。Next, the vapor phase growth method using this apparatus having the above configuration will be explained in the third step.
This will be explained with reference to Figures (,) to (d). In addition, Figure 3 (
, ) to (c) are schematic diagrams showing the positions of the furnace heating body 1, the substrate support 3, etc., and (d) is a schematic diagram showing the temperature pull file in the reactor. Also, here I nP/I nG
An example of a three-layer structure of an aAsP/I nP substrate will be described.
まず、炉加熱体１を第３図（、）に示す如く温度プルフ
ァイルＡの位置に配置し、連結棒１０ｆ反応管２の外部
から操作して■族金属ソースポート８、基板支持具３及
び■原ガス導入管１１等を温度プルファイルＡの位置に
対応させる。First, the furnace heating element 1 is placed at the temperature pull file A as shown in FIG. ■Make the source gas inlet pipe 11, etc. correspond to the position of temperature pull file A.
次いで、操作棒５の操作によシスライドカバー６を移動
し、ＩｎＰ基板４Ｑ・収納されている凹状溝部３ａを閉
の状態にしたところ、反応管２内の昇温を開始する。次
いで、反応管２内が温度プロファイルＡのような気相成
長可能な温度に達したら、ＨＣ１／Ｈ２導入管１４から
は昇温以前から流れているＨ２にＨｃｔｋ混入させてイ
ンジウムメタル９まで運び塩化インジウムを形成し、ま
た■原ガス導入管１１からは同じく昇温以前から流れて
いるＨ２にＰＨ３’（ｉ−混入させて、リンのガス状分
子を形成する。そして％ ＩｎＰ気相成長用原料ガスが
定常状態に達したら、前記スライドカバー６を移動し、
凹状溝部Ｊａｉ所望時間だけ開の状態にする。これによ
ｐ、ＩｎＰ基板４上には第４図（、）に示す如（、Ｉｎ
Ｐ気相成長層２１が成長形成される。なお、こ−のＩｎ
Ｐ気相成長層２１を形成する際にガリウムメタル９′が
収納されている■族金属ソースボート保護管１５内にＨ
２のみを流しておくことは勿論である。Next, by operating the operation rod 5, the system slide cover 6 is moved to close the concave groove 3a in which the InP substrate 4Q is housed, and the temperature inside the reaction tube 2 starts to rise. Next, when the inside of the reaction tube 2 reaches a temperature that allows vapor phase growth as shown in temperature profile A, Hctk is mixed into the H2 that has been flowing from the HC1/H2 introduction tube 14 before the temperature rise and is carried to the indium metal 9 where chloride is added. Indium is formed, and PH3' (i-) is mixed into H2, which has also been flowing from the raw gas inlet pipe 11 before the temperature was raised, to form gaseous molecules of phosphorus. When the gas reaches a steady state, move the slide cover 6,
The concave groove portion Jai is kept open for a desired period of time. As a result, as shown in FIG.
A P vapor growth layer 21 is grown. In addition, this In
When forming the P vapor phase growth layer 21, H is added to the group III metal source boat protection tube 15 in which the gallium metal 9' is housed.
Of course, only 2 is allowed to flow.
ＩｎＰ気相成長層２１が所望膜厚形成されたら、直ちに
操作棒５の操作によりスライドカバー６を移動して凹状
溝部３ａｆ閉の状態にする。次いで、炉加熱体１を温度
プロファイルＢの位置丁；に配置し、連結棒１０の操作
によりｍ族金属ソ譜
・、−スが−） ｓ 、 ｓ’ｆｌｌ族金属ソースケー
ト保護管１″Ｊ゛
：□′″：、％ ｓ 、ａ板支持具３及び■族ガス導入
管１１等−も温度プロファイルＢの位置に対応さぜる。Immediately after the InP vapor growth layer 21 is formed to a desired thickness, the operating rod 5 is operated to move the slide cover 6 to close the concave groove 3af. Next, the furnace heating element 1 is placed at the position of the temperature profile B, and by operating the connecting rod 10, the M group metal source skate protection tube 1''J is heated.゛:□''':, % s The A plate support 3, the group (Ⅰ) gas inlet pipe 11, etc. are also set to correspond to the position of the temperature profile B.
こような気相成長可能な温度になったらＨＣ１／Ｈ２導
入管１４′からもＨＣｌ ’ｉｉ−混入させてガリウム
メタル９′まで運び塩化ガリウムを形成し、またＶ原ガ
ス導入管１１にはＡｓＨ３を更に混入させて、砒素のガ
ス状分子を形成する。ＧａＩｎＡｓＰ気相成長用原料ガ
スが定常状態に達したら、前記ＩｎＰ気相成長工程と同
じく、凹状溝部を所望時間だけ開の状態にして、第４図
（ｂ）に示す如く該成長層２１上にＧａＩｎＡｓＰ層２
２を成長層成２る。このとき、ＩｎＰ基板４が管壁析出
物７ａよシもガス流上流側にあるため、ＧａＩｎＡｓＰ
層２２は管内層成２７ａの影響を受けない。When the temperature reaches such a temperature that allows vapor phase growth, HCl 'ii- is also mixed in from the HC1/H2 inlet pipe 14' and transported to the gallium metal 9' to form gallium chloride, and AsH3 is added to the V raw gas inlet pipe 11. is further mixed in to form gaseous molecules of arsenic. When the raw material gas for GaInAsP vapor phase growth reaches a steady state, the concave groove is kept open for a desired period of time, as in the InP vapor phase growth process, and the gas is deposited on the growth layer 21 as shown in FIG. 4(b). GaInAsP layer 2
2 to form a growth layer. At this time, since the InP substrate 4 and the tube wall precipitates 7a are on the upstream side of the gas flow, the GaInAsP
Layer 22 is not affected by intratubular stratification 27a.
ＧａＩｎＡａＰ気相成長層２２が所望膜厚形成されたら
、直ちに凹状溝部３ａを閉の状態にする。Immediately after the GaInAaP vapor growth layer 22 is formed to a desired thickness, the concave groove 3a is closed.
同時Ｋ ＨＣｌ−／ＩＩ２導入管１４／のｎｃｚと■原
ガス導入管１１のＡｓＨ３とを停止する。次いで、炉加
熱体、Ｊを温度プロファイルＣの位置に配置し、先の′
ブ如（ＧａＩｎＡｓＰ層２２上にＩｎＰ気相成長層２３
気ｉ成長形成されることになる。なお、第３図（Ｃ）類
の異なる層を、所望の配列で多層成長することができる
。しかも、炉加熱体１と■族金属ソースｙＷ−ト８．８
’基板支持具３、ｖ原ガス導入管１１等を各成長毎に管
壁析出物領域よシも反応管２内のガス流上流側へ移動す
ることで、管壁析出物７ｍ 、７ｂの影響を受けない気
相成長が可能となシ、気相成長層の再現性及び安定性の
向上、更には成長速度の安定化をはがシ得る効果が生ず
る。さらに、従来装置に比してガス・エツチング工程を
省略できるため、作業時間を大幅に短縮することができ
、経済性及び作業性の向上をはかシ得る。At the same time, ncz of K HCl-/II2 introduction pipe 14/ and (1) AsH3 of raw gas introduction pipe 11 are stopped. Next, place the furnace heating element J at the position of the temperature profile C, and
(InP vapor phase growth layer 23 on GaInAsP layer 22)
It will grow and form. Note that it is possible to grow multiple layers of different layers as shown in FIG. 3(C) in a desired arrangement. Furthermore, the furnace heating element 1 and the group II metal source yW-to 8.8
'By moving the substrate support 3, raw gas inlet pipe 11, etc. to the upstream side of the gas flow in the reaction tube 2 from the tube wall precipitate region for each growth, the influence of the tube wall precipitates 7m and 7b can be reduced. This has the effect of making it possible to perform vapor phase growth without any turbulence, improving the reproducibility and stability of the vapor phase grown layer, and further stabilizing the growth rate. Furthermore, since the gas etching step can be omitted compared to conventional equipment, the working time can be significantly shortened, resulting in improved economic efficiency and workability.
また、上述した効果を確認するため、本発明者等は実施
例装置を用いＩｎＰ基板４上にＩｎＰ気相成長層２１を
約５．０〔μｍ〕、その上にＧａＩｎＡｓＰ気相成長層
２２を約０，２〔μｍ、Ｌ最終層としてＩｎＰ気相成長
層２３ｔ−約２．０〔μｍ〕成長形成するの数社３層に
限るものではなく、適宜変更可能である。そして、所望
する成長層の数に応じて、反応管長等を適宜定めればよ
い。また、ｌａｐ基板の代わシにＧａＡｓ基板を用いて
もよ〈１このＧａＡｓ基板上にＧ１Ａｇ層やＧａＡｔＡ
＋ｓ層等を気相成長させることもできる。炉加熱体は必
ずしも移動させる必要はなく、操作棒の移動に応じて前
記第３図（ｄ）に示す如く反応管内温度プロファイルを
可変できるものであればよい。その他、本発明の要旨を
逸脱し寿いで、種々変形して実施することができる。In addition, in order to confirm the above-mentioned effect, the present inventors used the embodiment apparatus to form an InP vapor-phase epitaxy layer 21 of about 5.0 [μm] on the InP substrate 4, and a GaInAsP vapor-phase epitaxy layer 22 thereon. It is not limited to three layers, but can be changed as appropriate. Then, the length of the reaction tube and the like may be determined as appropriate depending on the desired number of growth layers. In addition, a GaAs substrate may be used instead of a LaP substrate.
+s layer etc. can also be grown in vapor phase. The furnace heating element does not necessarily have to be moved, but may be any element that can vary the temperature profile in the reaction tube as shown in FIG. 3(d) according to the movement of the operating rod. In addition, various modifications can be made without departing from the gist of the present invention.
第１図は従来の気相成長装置の概略構成を示す断面図、
第２図（１ｋ）〜（ｃ）は本発明の一実施例の構成を説
明するだめのもので、第２図（、）はその概略構成を示
す模式図、第２図（ｂ）はその要部構１・・・炉加熱体
、２・・・反応管、３ａ・・・凹状溝部、３・・・基板
支持具、４・・・ＩｎＰ基板、５・・・操作棒、６・・
・スライドカバー、７，７＊、７ｂ・・・管壁析出物、
８，８′・・・■族金属ソース＆−）、９・・・インジ
ウム、９′・・・ガリウム、１０・・・連結棒、１ノ・
・・■原ガス導入管、１２・・・反応管導入管、１３゜
１３′・・・シール、１４ 、１４’・・・ＨＣ４／′
Ｆ（２導入管、１５・・・■族金属ソースが一ト保護管
、１６・・・反応管導入管、２１・・・ＩｎＰ気相成長
層、２２・・・ＧａＩｎＡＩＩＰ気相成長層、２３・・
・ＩｎＰ気相成長層。FIG. 1 is a cross-sectional view showing the schematic configuration of a conventional vapor phase growth apparatus.
Figures 2 (1k) to (c) are for explaining the configuration of an embodiment of the present invention, Figure 2 (,) is a schematic diagram showing the schematic configuration, and Figure 2 (b) is a schematic diagram of the configuration. Principal parts 1...Furnace heating body, 2...Reaction tube, 3a...Concave groove, 3...Substrate support, 4...InP substrate, 5...Operation rod, 6...
・Slide cover, 7, 7*, 7b...tube wall deposits,
8, 8'... ■ Group metal source &-), 9... Indium, 9'... Gallium, 10... Connecting rod, 1 No.
...■Raw gas introduction tube, 12...Reaction tube introduction tube, 13゜13'...Seal, 14, 14'...HC4/'
F (2 introduction tube, 15... group metal source is one protection tube, 16... reaction tube introduction tube, 21... InP vapor phase growth layer, 22... GaInAIIP vapor phase growth layer, 23・・・
-InP vapor phase growth layer.
Claims (3)
と■族ガスと音用いた気相開管法によシ半導体基板上に
２種以上の■−ｖ族化合物半導体層を成長させる化合物
半導体の気相成長装置において、前記反応管内に配置さ
れ前記基板を支持する基板支持具と、この支持具近傍で
かつ上記反応管内のガス流上流側に配置された複数の■
族金属ソースカートと、上記支持具近傍でかつガス流上
流側にその一端が配置され上記支持具近傍にＶ族ガスを
導入する■族ガス導入管と、上記支持具、ポート及び導
入管を１つの結晶層成長毎に前記反応管内のガス流上流
側に所定距離だけ一体的に移動せしめる手段と、前記反
応管内の所定領域を加熱しかつ上記移動と共にその加熱
領域を可変して前記支持具近傍を一定状態に加熱する加
熱手段とを具備してなることｔ′特徴とする化合物半導
体の気相成長装置。(1) A raw material gas is introduced into a reaction tube, and two or more types of group ■-V compound semiconductor layers are formed on a semiconductor substrate by the gas phase open tube method using a chloride of a group ■ metal, a group ■ gas, and sound. In a vapor phase growth apparatus for growing a compound semiconductor, a substrate support disposed within the reaction tube to support the substrate, and a plurality of
A group metal source cart, a group gas introduction pipe whose one end is arranged near the support and on the upstream side of the gas flow and which introduces the group V gas into the vicinity of the support, and the support, the port, and the introduction pipe. means for integrally moving a predetermined distance upstream of the gas flow in the reaction tube for each crystal layer growth; 1. A compound semiconductor vapor phase growth apparatus characterized by comprising a heating means for heating the compound semiconductor to a constant state.
体からな〕、この炉加熱体社前記支持具箋が一ト及び導
入管と一体的に移動されるものであることを特徴とする
特許請求の範囲第１項記載の化合物半導体の気相成長装
置。(2) The heating means is a furnace heating body disposed outside the reaction tube, and the supporting tool is moved integrally with the furnace heating body and the introduction tube. A compound semiconductor vapor phase growth apparatus according to claim 1.
結棒に一体的に連結されたものであること１！−特徴と
する特許請求の範囲第１項記載の化合物半導体の気相成
長装置。(3) The support, the one and the introduction pipe are integrally connected to the same connecting rod.1! - A compound semiconductor vapor phase growth apparatus according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10426283A JPS59229816A (en) | 1983-06-13 | 1983-06-13 | Vapor growth apparatus for compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10426283A JPS59229816A (en) | 1983-06-13 | 1983-06-13 | Vapor growth apparatus for compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59229816A true JPS59229816A (en) | 1984-12-24 |
Family
ID=14376010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10426283A Pending JPS59229816A (en) | 1983-06-13 | 1983-06-13 | Vapor growth apparatus for compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59229816A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7279047B2 (en) * | 2001-07-06 | 2007-10-09 | Technologies And Devices, International, Inc. | Reactor for extended duration growth of gallium containing single crystals |
| US7501023B2 (en) | 2001-07-06 | 2009-03-10 | Technologies And Devices, International, Inc. | Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
| US7670435B2 (en) | 2001-03-30 | 2010-03-02 | Technologies And Devices International, Inc. | Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5788095A (en) * | 1980-11-20 | 1982-06-01 | Fujitsu Ltd | Vapor phase growing method |
| JPS57123895A (en) * | 1981-01-22 | 1982-08-02 | Nippon Telegr & Teleph Corp <Ntt> | Vapor-phase epitaxial growing apparatus |
-
1983
- 1983-06-13 JP JP10426283A patent/JPS59229816A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5788095A (en) * | 1980-11-20 | 1982-06-01 | Fujitsu Ltd | Vapor phase growing method |
| JPS57123895A (en) * | 1981-01-22 | 1982-08-02 | Nippon Telegr & Teleph Corp <Ntt> | Vapor-phase epitaxial growing apparatus |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7670435B2 (en) | 2001-03-30 | 2010-03-02 | Technologies And Devices International, Inc. | Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE |
| US7279047B2 (en) * | 2001-07-06 | 2007-10-09 | Technologies And Devices, International, Inc. | Reactor for extended duration growth of gallium containing single crystals |
| US7501023B2 (en) | 2001-07-06 | 2009-03-10 | Technologies And Devices, International, Inc. | Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
| US7611586B2 (en) * | 2001-07-06 | 2009-11-03 | Technologies And Devices International, Inc. | Reactor for extended duration growth of gallium containing single crystals |
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