JPS59228755A - Solid state image sensor - Google Patents

Solid state image sensor

Info

Publication number
JPS59228755A
JPS59228755A JP58103343A JP10334383A JPS59228755A JP S59228755 A JPS59228755 A JP S59228755A JP 58103343 A JP58103343 A JP 58103343A JP 10334383 A JP10334383 A JP 10334383A JP S59228755 A JPS59228755 A JP S59228755A
Authority
JP
Japan
Prior art keywords
layer
state image
color filter
solid
image sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58103343A
Other languages
Japanese (ja)
Inventor
Yoshiyori Takizawa
義順 瀧澤
Tadashi Sugiki
忠 杉木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58103343A priority Critical patent/JPS59228755A/en
Publication of JPS59228755A publication Critical patent/JPS59228755A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To enable to accurately separate colors by filling a transparent substance having the same refractive index as that a color filter layer between a solid state image sensing element for photographing in color and a window member of a package. CONSTITUTION:A recess 31 is formed on the upper surface of an IC package 30. The recess 31 becomes a vessel 33 of a solid state image sensing element 32, which contains a photoreceiving surface formed with a color filter layer 34 toward opening side of the vessel 33. A transparent substance 35 is filled in the vessel 33 which contains the element 32, and the recess 31 is sealed by a sealing 36 to become a transparent window member. The substrate 35 has similar refractive index to the layer 34. Thus, even if irregular surface exists on the surface of the layer 34, the irregular surface is buried with the substrate 35. Accordingly, an input light is not refracted on the surface of the layer 34. The boundary to an air layer is flat only on the surface of the glass 36. Accordingly, a lens effect is not produced.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、受光面上にカラーフィルタ層を形成したカラ
ー撮像用の固体撮像装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a solid-state imaging device for color imaging in which a color filter layer is formed on a light-receiving surface.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

近時、CCD型、MOS型等の固体撮像素子を用いたテ
レビジョンカメラが実用化されている。特に、一般用カ
ラービデオカメラにあっては、従来の単管式ビデオカメ
ラと同様に、1枚の固体撮像素子を効果的に用いた所謂
単板式ビデオカメラの開発に努力が注がれている。この
種の単板式ビデオカメラは、基本的には固体撮像素子の
受光面上に画素に対応させてカラーフィルタを設け、そ
の出力から周波数分離あるいは位相分離等の手段を用い
て、その色信号をそれぞれ抽出したのち、カラーテレビ
ジョン信号を得るものである。
Recently, television cameras using solid-state imaging devices such as CCD type and MOS type have been put into practical use. In particular, with regard to general color video cameras, efforts are being made to develop so-called single-chip video cameras that effectively use a single solid-state image sensor, similar to conventional single-tube video cameras. . This type of single-chip video camera basically provides a color filter corresponding to each pixel on the light-receiving surface of the solid-state image sensor, and uses frequency separation or phase separation from the output to extract the color signal. After each is extracted, a color television signal is obtained.

すなわち、第1図のカラーフィルタ構成例に示すように
固体撮像素子の受光面に形成された複数の画素1に対応
させて例えばYe(黄色)フィルタ2、およびCy(シ
アン)フィルタ3を所定の規則に従って配設し、隣接す
る2ライン間の各画素信号を合成して読出したのち、こ
れを周波数分離して各色信号を分離再生する如く構成さ
れる。
That is, as shown in the color filter configuration example in FIG. 1, for example, a Ye (yellow) filter 2 and a Cy (cyan) filter 3 are arranged in a predetermined manner corresponding to a plurality of pixels 1 formed on the light receiving surface of a solid-state image sensor. They are arranged according to a rule, and after combining and reading out each pixel signal between two adjacent lines, they are frequency-separated to separate and reproduce each color signal.

ところで、一般にこのようなカラーフィルタはガラス基
板を染色して形成され、上記固体撮像素子の受光面に位
置合せして取付けられる。
By the way, such color filters are generally formed by dyeing a glass substrate, and are attached to the light receiving surface of the solid-state image sensor in alignment with the light receiving surface.

このためYe  フィルタ2やCy  フィルタ3と画
素との位置ずれが生じ易く、しかも生産性が悪いという
不具合があった。
For this reason, there is a problem that misalignment between the Ye filter 2 or the Cy filter 3 and the pixel is likely to occur, and the productivity is poor.

そこで、最近では、例えば第2図に示すように固体撮像
素子の受光面に直接カラーフィルタ層を形成して、上述
した問題を解消するようにした固体撮像素子(本例では
COD)が提案されている。
Therefore, recently, a solid-state image sensor (COD in this example) has been proposed in which the above-mentioned problem is solved by forming a color filter layer directly on the light-receiving surface of the solid-state image sensor, as shown in FIG. ing.

すなわち、CODは例えばP型シリコン基板11に画素
をなすN 層からなる電荷蓄積部14、電荷転送部15
およびチャンネルストッパ16とを形成し、さらに上記
P型シリコン基板11上にポリシリコンからなる電極1
7゜18をStO□膜19全19て形成したのち、上記
電荷蓄積部14f、除く部分をアルミニウム等からなる
遮光層2θで覆い、その表面をさらにガラス等の平滑化
層21で被覆した構造となっている。
That is, the COD includes, for example, a charge storage section 14 and a charge transfer section 15 made up of an N layer forming a pixel on a P-type silicon substrate 11.
and a channel stopper 16, and furthermore, an electrode 1 made of polysilicon is formed on the P-type silicon substrate 11.
7° 18 is formed using the entire StO□ film 19, the portion other than the charge storage portion 14f is covered with a light shielding layer 2θ made of aluminum or the like, and the surface thereof is further covered with a smoothing layer 21 made of glass or the like. It has become.

このようなCODの前記平滑化層21上に、前記画素に
対応してYe染色層23およびCy染色層24が中間層
25を介して積層される。
On the smoothing layer 21 of such a COD, a Ye dyeing layer 23 and a Cy dyeing layer 24 are laminated via an intermediate layer 25 in correspondence with the pixels.

ところが、このような構造であると、前記平滑化層21
によってCCD表面が平滑化されているといえども、ま
だ3μm 程度の凹凸がある。
However, with such a structure, the smoothing layer 21
Even though the surface of the CCD has been smoothed by the method, there are still irregularities of about 3 μm.

しかも各染色層23.24が特定の画素に対応して設け
られるので、染色層23.24が設けられた部位と、他
の部位との間で厚みの差が生じ、その表面が凹凸状とな
る。この結果、各画素位置毎に異った所謂レンズ効果が
生じ、各画素の実効受光面積に差異が生ずるという不具
合が生じた。これがために、各画素から得られる信号の
色成分比率が変化し、色分離を効果的に行うことができ
なくなるという問題が生じた。
Moreover, since each dyeing layer 23, 24 is provided corresponding to a specific pixel, there is a difference in thickness between the area where the dyeing layer 23, 24 is provided and other areas, and the surface is uneven. Become. As a result, a different so-called lens effect occurs at each pixel position, resulting in a problem that the effective light-receiving area of each pixel varies. This causes a problem in that the color component ratio of the signal obtained from each pixel changes, making it impossible to effectively perform color separation.

つまり、色再現性が悪(なった。In other words, the color reproducibility is poor.

〔発明の目的〕[Purpose of the invention]

本発明はかかる問題点に鑑みてなされたものであり、そ
の目的とするところは、カラーフィルタ層の形成された
固体撮像素子に生ずるレンズ効果を防止し、正確な色分
離が行え、色再現性に優れた生産性の高い固体撮像装置
を提供することにある。
The present invention has been made in view of these problems, and its purpose is to prevent the lens effect that occurs in a solid-state image sensor on which a color filter layer is formed, to perform accurate color separation, and to improve color reproducibility. An object of the present invention is to provide a solid-state imaging device with excellent productivity and high productivity.

〔発明の概要〕[Summary of the invention]

本発明は、受光面にカラーフィルタ層を形成したカラー
撮像用の固体撮像素子と、この固体撮像素子を収納する
・ぐツケージの透明性窓部材との間に、上記カラーフィ
ルタ層の屈折率と同じ屈折率を有する透明物質を充填し
たことを特徴としている。
The present invention provides a structure in which a color filter layer is formed on a light-receiving surface of a solid-state image sensor for color imaging, and a transparent window member of a cage that accommodates the solid-state image sensor. It is characterized by being filled with a transparent material having the same refractive index.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、固体撮像素子が収納されている工CA
?ツケージ内の密閉空間に、カラーフィルタ層と同じ屈
折率を持った透明物質が充填されるので、カラーフィル
タ層表面の凹凸が上記透明物質で埋め尽くされることに
なる。したかって、従来、カラーフィルタ層と空気との
界面で生じていた屈折がなくなり、その問題となったレ
ンズ効果を防止することが可能となる。
According to the present invention, an engineering CA in which a solid-state image sensor is housed
? Since the sealed space in the cage is filled with a transparent material having the same refractive index as the color filter layer, the unevenness on the surface of the color filter layer is completely filled with the transparent material. Therefore, the refraction that conventionally occurs at the interface between the color filter layer and the air is eliminated, making it possible to prevent the problematic lens effect.

この結果、各画素の実効受光面積を一定とすることがで
き、正確な色分離が行え、色再現性の良好な固体撮像装
置を提供できる。
As a result, the effective light-receiving area of each pixel can be made constant, accurate color separation can be performed, and a solid-state imaging device with good color reproducibility can be provided.

〔発明の実施例〕[Embodiments of the invention]

以下に本発明の詳細を図示の実施例に基づき説明する。 The details of the present invention will be explained below based on the illustrated embodiments.

第3図および第4図は本発明の一実施例に係る固体撮像
装置を示す図である。図において30はICパッケージ
であり、この、I Cパッケージ30の上面中央部には
凹部31が形成されている。この凹部31は固体撮像素
子(たとえばC0D)Jjの収納部33となっており、
素子32はカラーフィルタ層34を形成した受光面側を
上記収納部33の開口側へ向けて収納される。しかして
、上記素子32の収納された収納部33には透明物質3
5が充填され、透明性窓部材となるシーリングガラス3
6によって上記凹部31が密閉される。上記透明物質3
5は前記カラーフィルタ層34と同様の屈折率を有する
ものである。したがってカラーフィルタ層34がアクリ
ル樹脂であれば、透明物質35としては、その屈折率が
約1.5の物質が用いられる。理想的には、上記透明物
質35がアクリル樹脂であることが望ましい。しかしな
がら、この場合には透明物質35の融点がカラーフィル
タ層34の融点よりも低くなげれば、透明物質35の充
填時にカラーフィルタ層34が溶融してしまう可能性が
高いので現実的でない。したがって、上記透明物質35
として拡、たとえば顕微鏡観察の際に観察物体を浸す油
等、屈折率が約1.5の液体状の油を用いれば良い。こ
の油は気泡が入らないように前記収納部33に充填され
、前記シーリングガラス36によって液密に密閉される
3 and 4 are diagrams showing a solid-state imaging device according to an embodiment of the present invention. In the figure, 30 is an IC package, and a recess 31 is formed in the center of the upper surface of the IC package 30. This recessed portion 31 serves as a housing portion 33 for a solid-state image sensor (for example, C0D) Jj.
The element 32 is housed with the light-receiving surface side on which the color filter layer 34 is formed facing toward the opening side of the housing section 33 . Therefore, the transparent material 3 is placed in the storage section 33 in which the element 32 is stored.
5 is filled and becomes a transparent window member.
6, the recess 31 is sealed. Transparent substance 3 above
5 has the same refractive index as the color filter layer 34. Therefore, if the color filter layer 34 is made of acrylic resin, the transparent material 35 used is a material whose refractive index is about 1.5. Ideally, the transparent material 35 is preferably an acrylic resin. However, in this case, if the melting point of the transparent material 35 is made lower than the melting point of the color filter layer 34, there is a high possibility that the color filter layer 34 will melt when the transparent material 35 is filled, which is not practical. Therefore, the transparent substance 35
For example, liquid oil with a refractive index of about 1.5 may be used, such as oil in which objects to be observed are immersed during microscopic observation. This oil is filled into the storage section 33 to prevent air bubbles from entering, and the storage section 33 is sealed liquid-tightly by the sealing glass 36.

なお、図中37は固体撮像装置と外部素子との電気的な
接続を行うためのリードピンであり、このリードピン3
1の収納部33側端部は固体撮像素子32とボンディン
グワイヤ38によって結合されている。
Note that 37 in the figure is a lead pin for electrically connecting the solid-state imaging device to an external element;
The end portion of the housing portion 33 side of the storage portion 1 is connected to the solid-state image sensor 32 by a bonding wire 38 .

かくして、本実施例装置では、カラーフィルメ層34表
面に凹凸が存在しても、この凹凸をカラーフィルタ層3
4と同じ屈折率を持つ透明物質35で埋め尽くしている
ので、カラーフィルタ層34の表面で入力光の屈折を生
じることがない。そして空気層との界面は前記シーリン
グガラス360表面だけとなり、平担である。
Thus, in the device of this embodiment, even if there are irregularities on the surface of the color film layer 34, the irregularities can be removed by removing the irregularities from the color filter layer 3.
Since the color filter layer 34 is filled with a transparent material 35 having the same refractive index as the color filter layer 34, the input light is not refracted on the surface of the color filter layer 34. The interface with the air layer is only the surface of the sealing glass 360, which is flat.

従って、レンズ効果を生じることがなくなる。Therefore, no lens effect occurs.

この結果、各画素の実効受光面積はほぼ等しくなり、正
確な色分離が可能な、つまり色再現性に優れた固体撮像
素子の提供が可能となる。
As a result, the effective light-receiving area of each pixel becomes approximately equal, making it possible to provide a solid-state imaging device that can perform accurate color separation, that is, has excellent color reproducibility.

さらに、この場合には、液体状の上記透明物質35が固
体撮像素子の発熱に対する冷却媒体として機能するので
、素子の冷却効果も良好となる。このため、暗電流の抑
制、素子の高密度化に大きな効果を発揮するなど、多大
な効果を呈する。
Furthermore, in this case, the liquid transparent substance 35 functions as a cooling medium for the heat generated by the solid-state imaging device, so that the cooling effect of the device is also improved. Therefore, it exhibits great effects such as suppressing dark current and increasing device density.

なお、本発明はCCD型のものに係らすMOS型等のも
のにも適用できることはいうまでもない。
It goes without saying that the present invention can also be applied to MOS type devices related to CCD type devices.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は単板式カラービデオカメラにおけるカラーフィ
ルタの色配列例を示す図、第2図はカラーフィルタ層が
形成されたCODの断面図、第3図は本発明の一実施例
に係る固体撮像装置の外観斜視図、第4図は第3図にお
けるA−A線に沿って切断し矢印方向からみた断面図で
ある。 1・・・画素、2・・・Ye  フィルタ、3・・・C
y  フィルタ、11・・・P型シリコン基板、23・
・・Ye染色層、24・・・Cχ染色層、30・・・I
cパッケージ、32・・・固体撮像素子、33・・・収
納部、34・・・カラーフィルタ層、35・・・透明物
質、36・・・シーリングガラス。 出願人代理人 弁理士 鈴 圧式 彦 第1図 や、2図 竿3図 第4図
FIG. 1 is a diagram showing an example of color arrangement of color filters in a single-chip color video camera, FIG. 2 is a cross-sectional view of a COD on which a color filter layer is formed, and FIG. 3 is a solid-state imaging device according to an embodiment of the present invention. FIG. 4, which is a perspective view of the appearance of the device, is a sectional view taken along the line A-A in FIG. 3 and viewed from the direction of the arrow. 1...Pixel, 2...Ye filter, 3...C
y filter, 11... P-type silicon substrate, 23.
...Ye staining layer, 24...Cχ staining layer, 30...I
c package, 32... Solid-state image sensor, 33... Storage section, 34... Color filter layer, 35... Transparent substance, 36... Sealing glass. Applicant's agent Patent attorney Rin Ushiki Hiko Figures 1, 2, 3, and 4

Claims (2)

【特許請求の範囲】[Claims] (1)  受光面上にカラーフィルタ層を形成してなる
カラー撮像用の固体撮像素子と、この固体撮像素子の上
記カラーフィルタ層に透明性窓部材を対向させて上記固
体撮像素子を収納するパッケージと、このパッケージの
上記透明性窓部材と前記固体撮像素子のカラーフィルタ
層との間に充填された前記カラーフィルタ層の屈折率と
同じ屈折率を有する透明物質とを具備してなる固体撮像
装置。
(1) A solid-state image sensor for color imaging formed by forming a color filter layer on a light-receiving surface, and a package that houses the solid-state image sensor with a transparent window member facing the color filter layer of the solid-state image sensor. and a transparent substance having the same refractive index as that of the color filter layer, which is filled between the transparent window member of the package and the color filter layer of the solid-state image sensor. .
(2)  透明物質は、前記パッケージ内に充填密閉さ
れる液状体からなるものであることを特徴とする特許請
求の範囲第1項記載の固体撮像装置。
(2) The solid-state imaging device according to claim 1, wherein the transparent substance is a liquid substance that is filled and sealed in the package.
JP58103343A 1983-06-09 1983-06-09 Solid state image sensor Pending JPS59228755A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58103343A JPS59228755A (en) 1983-06-09 1983-06-09 Solid state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58103343A JPS59228755A (en) 1983-06-09 1983-06-09 Solid state image sensor

Publications (1)

Publication Number Publication Date
JPS59228755A true JPS59228755A (en) 1984-12-22

Family

ID=14351490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58103343A Pending JPS59228755A (en) 1983-06-09 1983-06-09 Solid state image sensor

Country Status (1)

Country Link
JP (1) JPS59228755A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6321878A (en) * 1986-07-16 1988-01-29 Canon Inc Optical semiconductor device
JPH01201952A (en) * 1988-02-05 1989-08-14 Matsushita Electron Corp Color solid-state image pickup device
JPH0233978A (en) * 1988-07-22 1990-02-05 Matsushita Electron Corp Optical semiconductor device
US5770889A (en) * 1995-12-29 1998-06-23 Lsi Logic Corporation Systems having advanced pre-formed planar structures
US5834799A (en) * 1989-08-28 1998-11-10 Lsi Logic Optically transmissive preformed planar structures
US7059040B1 (en) 2001-01-16 2006-06-13 Amkor Technology, Inc. Optical module with lens integral holder fabrication method
US7126111B2 (en) 1999-12-08 2006-10-24 Amkor Technology, Inc. Camera module having a threaded lens barrel and a ball grid array connecting device
US7146106B2 (en) 2002-08-23 2006-12-05 Amkor Technology, Inc. Optic semiconductor module and manufacturing method
US7227236B1 (en) 2005-04-26 2007-06-05 Amkor Technology, Inc. Image sensor package and its manufacturing method
US7359579B1 (en) 2004-10-08 2008-04-15 Amkor Technology, Inc. Image sensor package and its manufacturing method
US7576401B1 (en) 2005-07-07 2009-08-18 Amkor Technology, Inc. Direct glass attached on die optical module

Cited By (18)

* Cited by examiner, † Cited by third party
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JPS6321878A (en) * 1986-07-16 1988-01-29 Canon Inc Optical semiconductor device
JPH0719893B2 (en) * 1986-07-16 1995-03-06 キヤノン株式会社 Optical semiconductor device
JPH01201952A (en) * 1988-02-05 1989-08-14 Matsushita Electron Corp Color solid-state image pickup device
JPH0233978A (en) * 1988-07-22 1990-02-05 Matsushita Electron Corp Optical semiconductor device
US5834799A (en) * 1989-08-28 1998-11-10 Lsi Logic Optically transmissive preformed planar structures
US5770889A (en) * 1995-12-29 1998-06-23 Lsi Logic Corporation Systems having advanced pre-formed planar structures
US7199359B2 (en) 1999-12-08 2007-04-03 Amkor Technology, Inc. Camera module fabrication method including singulating a substrate
US7126111B2 (en) 1999-12-08 2006-10-24 Amkor Technology, Inc. Camera module having a threaded lens barrel and a ball grid array connecting device
US9735191B2 (en) 1999-12-08 2017-08-15 Amkor Technology, Inc. Molded semiconductor package
US9332164B2 (en) 1999-12-08 2016-05-03 Amkor Technology, Inc. Molded semiconductor package with snap lid
US8994860B2 (en) 1999-12-08 2015-03-31 Amkor, Technology, Inc. Molded image sensor package and method
US7059040B1 (en) 2001-01-16 2006-06-13 Amkor Technology, Inc. Optical module with lens integral holder fabrication method
US7609461B1 (en) 2001-01-16 2009-10-27 Amkor Technology, Inc. Optical module having cavity substrate
US7146106B2 (en) 2002-08-23 2006-12-05 Amkor Technology, Inc. Optic semiconductor module and manufacturing method
US7359579B1 (en) 2004-10-08 2008-04-15 Amkor Technology, Inc. Image sensor package and its manufacturing method
US7227236B1 (en) 2005-04-26 2007-06-05 Amkor Technology, Inc. Image sensor package and its manufacturing method
US7911017B1 (en) 2005-07-07 2011-03-22 Amkor Technology, Inc. Direct glass attached on die optical module
US7576401B1 (en) 2005-07-07 2009-08-18 Amkor Technology, Inc. Direct glass attached on die optical module

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