JPH02170575A - Image sensor - Google Patents
Image sensorInfo
- Publication number
- JPH02170575A JPH02170575A JP63326759A JP32675988A JPH02170575A JP H02170575 A JPH02170575 A JP H02170575A JP 63326759 A JP63326759 A JP 63326759A JP 32675988 A JP32675988 A JP 32675988A JP H02170575 A JPH02170575 A JP H02170575A
- Authority
- JP
- Japan
- Prior art keywords
- green
- image sensor
- blue
- filter
- sensor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000428 dust Substances 0.000 abstract description 9
- 239000011347 resin Substances 0.000 abstract description 5
- 229920005989 resin Polymers 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 2
- 239000011521 glass Substances 0.000 description 7
- 238000007789 sealing Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- PGAPATLGJSQQBU-UHFFFAOYSA-M thallium(i) bromide Chemical compound [Tl]Br PGAPATLGJSQQBU-UHFFFAOYSA-M 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、イメージセンサに関し、特に受光窓の構造に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an image sensor, and particularly to the structure of a light receiving window.
従来、この種のイメージセンサはガラス封止型イメージ
センサと言われるもので、第5図に示スようにパッケー
ジ51のイメージセンサチップ取り付は箇所にイメージ
センサチップ52がマウントされており、そのイメージ
センサチップの受光表面に色を分解するカラートッドフ
ィルタ53が密着していた。そしてイメージセンサチッ
プのポンディングパット部とパッケージの内側まで引き
込まれているリードフレーム54の間はポンディングワ
イヤ55で接続されている。パッケージの開口部にガラ
スカバー56が封止用として、フィルタ53の表面から
約1ミリ離れている所に取り付けられている。Conventionally, this type of image sensor is called a glass-sealed image sensor, and as shown in FIG. A color tod filter 53 that separates colors was in close contact with the light-receiving surface of the image sensor chip. A bonding wire 55 is connected between the bonding pad portion of the image sensor chip and the lead frame 54 which is drawn into the inside of the package. A glass cover 56 is attached to the opening of the package for sealing purposes at a distance of about 1 mm from the surface of the filter 53.
またこの種のイメージセンサのフィルタ53をチップ受
光表面へ取りつける工程はポンディング工程と封止工程
の間に行なわれる。このため、フィルタ530表面やガ
ラスカバー56の裏面に塵埃が付着していた場合、この
部分に付着していた塵埃は封止、後には取り除けない。Further, the step of attaching the filter 53 of this type of image sensor to the light-receiving surface of the chip is performed between the bonding step and the sealing step. Therefore, if dust is attached to the surface of the filter 530 or the back surface of the glass cover 56, the dust attached to this portion is sealed and cannot be removed later.
またパッケージ内部とフィルタ53の表面とガラスカバ
ー56の裏面との間には隙間があるので、パッケージ内
部に付着していた塵埃が、封止後に振動などの理由で浮
遊してガラスカバー56の裏面やフィルタ53の表面に
付着することがある。これらのため、イメージセンサを
ビデオカメラに実装して撮影した時、この塵埃が黒い点
キズとしてテレビモニタに表示されてしまい、このキズ
が選別工程や入庫検査でデバイスの不良と見なされる原
因となる。In addition, since there is a gap between the inside of the package, the front surface of the filter 53, and the back side of the glass cover 56, dust adhering to the inside of the package may float due to vibrations or other reasons after sealing, and the back side of the glass cover 56 or may adhere to the surface of the filter 53. For this reason, when an image sensor is mounted on a video camera and a picture is taken, this dust will be displayed as black dots on the TV monitor, and these scratches will be considered as defective devices during the sorting process and warehouse inspection. .
本発明の目的は、上記の欠点をなくし、イメージセンサ
の受光窓裏面とフィルタ表面に付着する塵埃をなくそう
とするものである。SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned drawbacks and to eliminate dust adhering to the back surface of the light receiving window of an image sensor and the surface of the filter.
本発明のイメージセンサは、イメージセンサチップ受光
表面上に密着させたフィルタを外部にデバイスの受光窓
として露出させる構造を有し、またイメージセンサチッ
プ及びフィルタの非受光部とパッケージを封止する構造
を有している。The image sensor of the present invention has a structure in which a filter closely attached to the light-receiving surface of the image sensor chip is exposed to the outside as a light-receiving window of the device, and a structure in which the image sensor chip, the non-light-receiving part of the filter, and the package are sealed. have.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明を単板型カラーイメージセンサに適用し
た一実施例の要部縦断面図である。まずパッケージ11
の中央基底部、つまりイメージセンサ取り付は箇所に電
荷結合素子型イメージセンサチップ12がマウントされ
ている。イメージセンサのポンディングパット部はパッ
ケージ内部に密着されているリードフレーム13とポン
ディングワイヤ14で接続されている。イメージセンサ
チップ受光部表面上には、カラートッドフィルタ15が
密着している。そして第2図に示す様に、カラートッド
フィルタ受光部21の周囲にある非受光部の表面と、パ
ッケージ22の開口部が樹脂23によって封止されたも
のである。FIG. 1 is a longitudinal sectional view of a main part of an embodiment in which the present invention is applied to a single-plate color image sensor. First, package 11
A charge-coupled device type image sensor chip 12 is mounted at the central base of the image sensor, that is, at the location where the image sensor is mounted. A bonding pad portion of the image sensor is connected by a bonding wire 14 to a lead frame 13 that is tightly attached to the inside of the package. A color tod filter 15 is in close contact with the surface of the image sensor chip light receiving section. As shown in FIG. 2, the surface of the non-light-receiving portion around the color tod filter light-receiving portion 21 and the opening of the package 22 are sealed with a resin 23.
第3図はカラートッドフィルタ31とイメージセンサチ
ップ32の密着した状態を図示したものである。カラー
トッドフィルタは、赤、緑、青の3色の染色によってポ
リマが着色されているものである。この赤フィルタ33
.緑フィルタ34゜青フィルタ35の配列はバイア(B
ayer)配列といわれるもので、
奇数行では、赤緑赤緑赤緑・・・・・・・・・偶数行で
は、緑青緑青緑青・・・・・・・・・と赤緑青のカラー
フィルタが交互に配置されている。そして各カラーフィ
ルタはイメージセンサチップのホトダイオード36を覆
う様に、つまり撮像エレメントと同じピッチで色フィル
タがモザイク状に並んでいる。また、各カラーフィルタ
の境界は遮光部37によって遮光するようになっている
。FIG. 3 illustrates a state in which the color tod filter 31 and the image sensor chip 32 are in close contact with each other. Color Todd filters are made of polymers that are colored by dyeing in three colors: red, green, and blue. This red filter 33
.. The arrangement of the green filter 34° and the blue filter 35 is via (B
In the odd numbered rows, the color filters are red, green, red, green, red, green, green, blue, green, blue, green, blue, green, green, green, green, green, green, green, green, blue, green, green, green, green, green, green, green, blue, green, blue, green, blue, green, green, blue, green, blue, green, green, blue, green, blue, green, green, blue, green, green, blue, green, green, green, blue, green, green, blue, blue, green, green, green, green, green, green, green, green, green, green, green, green, blue, blue, green, green, blue, blue, green, green, blue, blue, green, green, blue, blue, green, green, blue, green, blue, green, blue, green, blue, green, blue, green, green, blue, green, blue, green, blue, green, blue, green, blue, green, blue, green, blue, green, blue, green, blue, green, blue, green, blue, green, blue, green, blue, green, blue, blue, green, blue and blue arranged alternately. Each color filter is arranged in a mosaic pattern so as to cover the photodiode 36 of the image sensor chip, that is, at the same pitch as the imaging element. Further, the boundaries between each color filter are shielded from light by a light shielding section 37.
本実施例によれば、カラートッドフィルタを直接、デバ
イスの受光窓とすることができ、このため従来のものよ
り受光窓とイメージセンサチップ表面に塵埃等が入る割
合が減り、イメージセンサチップの歩留り向上となる。According to this embodiment, the color tod filter can be used directly as the light receiving window of the device, which reduces the rate of dust entering the light receiving window and the surface of the image sensor chip compared to the conventional method, and improves the yield of image sensor chips. It will be an improvement.
第4図は本発明の他の実施例を示すもので、近赤外線イ
メージセンサに適用したものである。FIG. 4 shows another embodiment of the present invention, which is applied to a near-infrared image sensor.
イメージセンサの構造は第1〜3図の一実施例とほぼ同
じである。特にこの一実施例と異なるのはフィルタとし
て近赤外透過可視光カットフィルタ41を用いる点と、
樹脂ボディの替りに遮光板42で金属封止している点で
ある。The structure of the image sensor is almost the same as the embodiment shown in FIGS. 1-3. Particularly different from this embodiment is that a near-infrared transmitting visible light cut filter 41 is used as a filter;
The point is that metal sealing is performed using a light shielding plate 42 instead of a resin body.
重版されている電荷結合素子型イメージセンサチップで
も1.1〔μm〕までの近赤外線に感度をもっている。Even the reprinted charge-coupled device image sensor chip is sensitive to near-infrared rays up to 1.1 [μm].
したがって前述の一実施例で述べた電荷結合素子型イメ
ージセンサをそのまま使えばよいわけだが、特に可視光
を遮断して近赤外線のみを撮像するときには、赤外線透
過可視光カットフィルタ、例えば透過波長が0.6〜4
.5〔μm〕である臭化ヨウ化タリウム(KH2−5)
などを素材としたフィルタを用いる。Therefore, the charge-coupled device image sensor described in the previous embodiment can be used as is, but especially when blocking visible light and capturing only near-infrared light, it is necessary to use an infrared-transmitting visible light cut filter, for example, with a transmission wavelength of 0. .6-4
.. 5 [μm] of thallium bromide iodide (KH2-5)
Use a filter made of materials such as
遮光板は、アルミニウムもしくは金、銀、銅などの金属
板でできており、イメージセンサチップの受光部の大き
さに合わせた受光窓がおいている。The light-shielding plate is made of aluminum or a metal plate of gold, silver, copper, or the like, and has a light-receiving window that matches the size of the light-receiving part of the image sensor chip.
これによって、イメージセンサを封止するものである。This seals the image sensor.
イメージセンサに不要な光線があたって、イメージセン
サの出力信号に雑音が入らないようにするため、遮光板
を用いる。A light shielding plate is used to prevent unwanted light from hitting the image sensor and causing noise in the image sensor's output signal.
本発明により従来のガラス封止イメージセンサに比較し
、ガラスカバーによる光量の減衰が8%以上なくなる。The present invention eliminates attenuation of the amount of light due to the glass cover by 8% or more compared to conventional glass-sealed image sensors.
また従来の赤外線カメラは大型の撮像管を利用したもの
が多く装置が大型であったのに対し、本発明、つまり小
型の電荷結合素子イメージセンサを利用す、ると、装置
の小型化、消費電力の減少が見込まれる。In addition, while many conventional infrared cameras used large image pickup tubes and were large in size, the present invention, which uses a small charge-coupled device image sensor, reduces the size of the device and reduces consumption. A decrease in electricity consumption is expected.
以上説明したように本発明は、イメージセンサチップを
ガラスでカバーしないため、イメージセンサの受光窓と
イメージセンサチップ受光表面の間に塵埃が入る割合を
従来のものと比較し、約10%程度少なくなる。このた
めデバイスの良品の増加が見込まれる。As explained above, since the image sensor chip is not covered with glass, the present invention reduces the rate of dust entering between the light receiving window of the image sensor and the light receiving surface of the image sensor chip by approximately 10% compared to the conventional method. Become. As a result, the number of non-defective devices is expected to increase.
また、ガラスカバーによる反射損失、光量の減衰がなく
なるので、光の透過率が8%以上向上し、カメラの感度
も向上する。Furthermore, since reflection loss and attenuation of the amount of light due to the glass cover are eliminated, the light transmittance is improved by 8% or more, and the sensitivity of the camera is also improved.
この他に、部品点数が削減でき、イメージセンサの原価
低減にもつながる。In addition, the number of parts can be reduced, leading to a reduction in the cost of the image sensor.
第1図は本発明の一実施例の要部の縦断面図、第2図は
本発明の一実施例の上面図、第3図は本発明の一実施例
のチップ表面を拡大した縦断面図、第4図は本発明の他
の実施例の要部の縦断面図、第5図は従来のガラス封止
イメージセンサの要部の縦断面図である。
11・・・・・・パッケージ、12・・・・・・電荷結
合素子型イメージセンサチップ、13・・・・・・リー
ドフレーム、14・・・・・・ボンディングワイア、1
5・・団・カラートッドフィルタ、16・・・・・・樹
脂ボディ。
21・・・・・・カラートッドフィルタ受光部、22・
・・・・・パッケージ、23・・・・・・樹脂ボディ、
24・・川・リードフレーム。
31・・・・・・カラートッドフィルタ、32・旧・・
電荷結合素子型イメージセンサチップ、33・・・・・
・赤色フィルタ、34・・・・・・緑色フィルタ、35
・・・・・・青色フィルタ、36・・・・・・フォトダ
イオードアレイ、37・・・・・・遮光部。
41・・・・・・赤外線透過可視光カットフィルタ、4
2・・・・・・遮光板、43・・・・・・電荷結合素子
型イメージセンサチップ、44・・・・・・パッケージ
、45・・・・・・リードフレーム、46・・・・・・
ボンディングワイヤ。FIG. 1 is a longitudinal cross-sectional view of a main part of an embodiment of the present invention, FIG. 2 is a top view of an embodiment of the present invention, and FIG. 3 is a longitudinal cross-section of an enlarged chip surface of an embodiment of the present invention. FIG. 4 is a vertical cross-sectional view of a main part of another embodiment of the present invention, and FIG. 5 is a vertical cross-sectional view of a main part of a conventional glass-sealed image sensor. DESCRIPTION OF SYMBOLS 11... Package, 12... Charge coupled device type image sensor chip, 13... Lead frame, 14... Bonding wire, 1
5... Group color tod filter, 16... Resin body. 21...Color tod filter light receiving section, 22.
...Package, 23...Resin body,
24... River lead frame. 31... Color Todd Filter, 32 Old...
Charge-coupled device image sensor chip, 33...
・Red filter, 34...Green filter, 35
. . . Blue filter, 36 . . . Photodiode array, 37 . . . Light shielding part. 41... Infrared transmission visible light cut filter, 4
2... Light shielding plate, 43... Charge coupled device type image sensor chip, 44... Package, 45... Lead frame, 46...・
bonding wire.
Claims (1)
バイス受光窓として容器外部表面に露出したことを特徴
とするイメージセンサ。An image sensor characterized in that a filter that is closely attached to a light receiving surface of an image sensor chip is exposed on the external surface of a container as a device light receiving window.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63326759A JPH02170575A (en) | 1988-12-23 | 1988-12-23 | Image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63326759A JPH02170575A (en) | 1988-12-23 | 1988-12-23 | Image sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02170575A true JPH02170575A (en) | 1990-07-02 |
Family
ID=18191372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63326759A Pending JPH02170575A (en) | 1988-12-23 | 1988-12-23 | Image sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02170575A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0632508A3 (en) * | 1993-07-01 | 1995-04-12 | Sharp Kk | Photodetector with a multilayer filter and method of producing the same. |
KR100390823B1 (en) * | 2000-12-30 | 2003-07-10 | 주식회사 하이닉스반도체 | Method for fabricating image sensor having different depth of photodiodes in each different color pixel |
KR100407407B1 (en) * | 2001-11-20 | 2003-11-28 | 한국 고덴시 주식회사 | Color sensor |
-
1988
- 1988-12-23 JP JP63326759A patent/JPH02170575A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0632508A3 (en) * | 1993-07-01 | 1995-04-12 | Sharp Kk | Photodetector with a multilayer filter and method of producing the same. |
KR100390823B1 (en) * | 2000-12-30 | 2003-07-10 | 주식회사 하이닉스반도체 | Method for fabricating image sensor having different depth of photodiodes in each different color pixel |
KR100407407B1 (en) * | 2001-11-20 | 2003-11-28 | 한국 고덴시 주식회사 | Color sensor |
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