JPS59227799A - 酸化物単結晶のアニ−ル方法 - Google Patents

酸化物単結晶のアニ−ル方法

Info

Publication number
JPS59227799A
JPS59227799A JP10108683A JP10108683A JPS59227799A JP S59227799 A JPS59227799 A JP S59227799A JP 10108683 A JP10108683 A JP 10108683A JP 10108683 A JP10108683 A JP 10108683A JP S59227799 A JPS59227799 A JP S59227799A
Authority
JP
Japan
Prior art keywords
ingot
annealing
powder
oxide single
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10108683A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0367999B2 (enrdf_load_stackoverflow
Inventor
Yuji Oana
小穴　裕司
Shinji Esashi
江刺　信二
Masayuki Sakai
雅之 酒井
Tomio Takemae
竹前　富男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10108683A priority Critical patent/JPS59227799A/ja
Publication of JPS59227799A publication Critical patent/JPS59227799A/ja
Publication of JPH0367999B2 publication Critical patent/JPH0367999B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Insulating Materials (AREA)
JP10108683A 1983-06-07 1983-06-07 酸化物単結晶のアニ−ル方法 Granted JPS59227799A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10108683A JPS59227799A (ja) 1983-06-07 1983-06-07 酸化物単結晶のアニ−ル方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10108683A JPS59227799A (ja) 1983-06-07 1983-06-07 酸化物単結晶のアニ−ル方法

Publications (2)

Publication Number Publication Date
JPS59227799A true JPS59227799A (ja) 1984-12-21
JPH0367999B2 JPH0367999B2 (enrdf_load_stackoverflow) 1991-10-24

Family

ID=14291285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10108683A Granted JPS59227799A (ja) 1983-06-07 1983-06-07 酸化物単結晶のアニ−ル方法

Country Status (1)

Country Link
JP (1) JPS59227799A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03218996A (ja) * 1990-01-25 1991-09-26 Sumitomo Metal Mining Co Ltd ニオブ酸リチウム単結晶の製造方法
JP2019202915A (ja) * 2018-05-24 2019-11-28 住友金属鉱山株式会社 酸化物単結晶の熱処理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5619048A (en) * 1979-07-25 1981-02-23 Konishiroku Photo Ind Co Ltd Photographic image forming method
JPS57118087A (en) * 1981-01-06 1982-07-22 Toshiba Corp Manufacture of single crystal
JPS57140400A (en) * 1981-02-25 1982-08-30 Toshiba Corp Formation of single domain in single crystal of ferroelectric substance

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5619048A (en) * 1979-07-25 1981-02-23 Konishiroku Photo Ind Co Ltd Photographic image forming method
JPS57118087A (en) * 1981-01-06 1982-07-22 Toshiba Corp Manufacture of single crystal
JPS57140400A (en) * 1981-02-25 1982-08-30 Toshiba Corp Formation of single domain in single crystal of ferroelectric substance

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03218996A (ja) * 1990-01-25 1991-09-26 Sumitomo Metal Mining Co Ltd ニオブ酸リチウム単結晶の製造方法
JP2019202915A (ja) * 2018-05-24 2019-11-28 住友金属鉱山株式会社 酸化物単結晶の熱処理方法

Also Published As

Publication number Publication date
JPH0367999B2 (enrdf_load_stackoverflow) 1991-10-24

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