JPS59220970A - Gto of amplifying gate structure - Google Patents

Abstract

PURPOSE:To reduce the gate impedance by a method wherein two N type regions are provided in the surface P layer of a semiconductor substrate of P-N-P three-layer structure, and then the auxiliary and main GTO's are constructed while including those, respectively, a split resistor in parallel with the surface is provided in the N type region, the gate current at the time of turn-on is passed through this resistor, and is not passed at the time of turn-OFF. CONSTITUTION:Using the semiconductor substrate of P0N1P1 three-layer structure, the N type regions N2 and N3 are diffusion-formed in the P0 base layer of the uppermost layer, and the substrate side including the region N2 is used as the auxiliary GTO, and that including the region N3 as the main GTO. A gate electrode G1 for on-current supply is provided outside the region N2 by being positioned above the P0 layer, an auxiliary gate electrode GA outside the region N3, and further a gate electrode G2 for off-current lead-out between the regions N2 and N3. In this construction, P1<+>, P0<+>, and P2<+> layers are buried in the P0 layer while being made parallel with the surface, and the arcing current is controlled by means of lateral resistors Rg1 and Rg2 generated therebetween.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a gate turn-off thyristor with an amplifying gate structure.

Gate Turn Off Sailisk (hereinafter referred to as GTO) is generally a point! Since the IJIffl flow is larger than that of a normal thyristor, there is a drawback that the gate circuit becomes large. In order to improve this drawback, in recent years G
Since the TO has been developed, the operation of the amplification gate structure (TO) is no different from that of an ordinary thyristor, but the feature is that the portion called the auxiliary thyristor is also a GTO structure. FIG. 1 is an explanatory diagram of the configuration of an amplification gate structure a'rO having a gate drive circuit, and the GTO in FIG.
is an example of a buried gate structure. As shown in Figure 1, ()T
.

/ketpt NIPN, is an auxiliary GTO consisting of layers, and G
TOJ ke Pi NI PN, is the main ()To consisting of layers.

High concentration impurities @PL+ and P2+ are embedded in the P base layers of GTO/ and GTo,2.

R and P show the lateral resistance of the base layer. To turn on all of the GTO configured in this way, turn on the switch 4ta of the control power supply circuit J and turn on the DC power! . From the external gate terminal ao →, gate electrode G, → resistor Rg - + N2 line → buried p, + layer → N3 layer → cathode → switch 4ta → direct current is passed through the loop of power supply 5a, and this first auxiliary Turn on the GTO. This current flow main current is N! From layer to auxiliary gate electrode GA → buried P2+
It flows from the layer to the N3 layer to the cathode to the load impedance t to the DC power source 7 to the anode A, thereby turning on the main GTO. On the other hand, to turn off this GTO, turn off the switch va of the gate control power supply circuit J and turn on switch 1). Electrode G2 → Zener diode Z → Diode 9 → External gate terminal G.

→The off-gate current is passed through the loop of the DC power supply and tb, and this turns off the main ()TO'5.

Zener diode and diode at this time? Is the voltage drop caused by the impact P? + layer and auxiliary gate electrode G
Since it is applied as a reverse bias voltage between the N2 layer and the gate electrode G1 through A, a part of the current flowing to the auxiliary GTO is drawn out to the resistor B, and the entire gate voltage is drawn out to the gate electrode G1. The auxiliary GTO is also turned off.

The turn-on and turn-off operations of the +7TO as described above have the following problems. i.e. the main G.T.O.
What is the current at turn-off of Zener diode g and diode? Since gold flows, the power loss of the off-drive circuit increases due to the voltage drop below these voltages.Also, the TL stagnation that connects the auxiliary GTO at turn-off is connected to the resistor R.
5. All of the current is drawn out to the gate electrode G side, but the smaller the value of this resistor R9, the easier it is to draw out the off-gate current, and the gate cutoff ability of the GTO is improved. However, on the other hand, if the value of the resistor R9 is made small, there is a problem in that the rated critical on-current rise when the GTO is turned on, that is, the resistance to cold, decreases significantly.

In view of the above points, the present invention has been made in consideration of the above points.
It is an object of the present invention to provide a GTO with an amplified gate structure that can improve the gate cut-off capability ttft at turn-on and the ignition characteristics without decreasing the gate cut-off ability ttft, and reduce the power loss of the off-drive circuit of the GTO. The purpose is

An embodiment of the present invention will be described below with reference to the drawings.

In FIG. 2, the same parts as 1r21 are shown with the same reference numerals, and the explanation thereof will be omitted. GTO/HaP SumireNI'p
o It is an auxiliary GTO consisting of N1 layers, and ()To, 2 is a main ()To consisting of Pt N+ Pn Ns F'J. A gate electrode G2 is provided on the surface of the Po base layer to sandwich the N2pPa and N3 layers.A gate electrode G2 for leading out the off-electrode is provided on the surface of the Po base layer, sandwiching the N2pPa and N3 layers. On the surface of the Po base layer (in the center) is a gate '7I! for supplying on-current. A pole CcI is provided. A cathode electrode K is provided on the surface of the N3 layer.
P on the outer periphery, which is concentric with the on-current supplying gate electrode G1 and spaced a predetermined distance from the cathode electrode. An auxiliary gate electrode @GA is provided on the layer surface. This auxiliary gate electrode @GA is connected to an electrode provided on the surface of the N2 layer. The Pa base layer is the P base circle and its P
Embedded in the base layer fLt high-grade impurity sign p +
(Pl" * "O" * P2+, which will be described later). That is, in the P base layer located in the projection area of the N2 layer, a highly concentrated impurity layer Pl+ is formed in a radial or comb-like shape. A high 0 degree impurity layer p,+ is embedded in the P base layer located in the projection area of the N3 layer, and furthermore, both of the positions connecting Pl+ and F2+'iC are connected to the P2+ layer on the outside. fl-1: Yes. RR1 and Fq2 are the same as the above PI+'FJ I Po"M91 F
Figure 2 shows the lateral resistance of a P base circle at the end of a buried gate consisting of a 2+ layer. In the figure, K is the telekinetic sword electrode provided on the surface of the 1N3 layer, and A is the anode '71I pole.

Is it configured like this? In the cGTO, the gate drive circuit is connected as follows. That is, a gate control power supply circuit J is connected between the external gate terminal Go connected to the on-current supply gate electrode G and the cathode electrode, and the gate control power supply circuit J is connected between the Pl pole G1 and the off-current extraction gate electrode G2. A diode 9 of the illustrated polarity is connected between them.

GTOf configured as above: To turn on, switch Ua of power supply circuit J for gate control 1 is turned on, direct power supply jah, external gate terminal G0 → gate electrode G
1 → 1st anti-B61-+N2 layer → Complementary Kagut electrode G
A → Resistor R, 72 → N3M → Cando electrode → Switch ga → On-gate current ' through the loop of DC source 5a
fCi, thereby first turning on the auxiliary GTO. The current flowing at this time flows as an amplification gate current from the N2 layer to the support gate electrode G4 → resistor R2 → N3 layer → cathode @WLK → load impedance t- + direct power supply → anode 'hawk electrode A, and so on. The main GT(M'lf
The turn-on ionization of the auxiliary ()TO passes through the resistor Rqt, and the turn-on ionization of the auxiliary ()TO passes through the resistor Rqt, and the main GT (l) has a resistor 'E3 passing through it, so a small ignition current turns on the auxiliary ()TO and the main GT. Full ignition is possible and the ignition characteristics are enhanced.

Next is the GTOe turn-off - W for gate control in the void,
Turn off the switch q8 of the R circuit 3 and turn on the switch rb to connect the TKsaki power supply Sb to the switch b→
The off-gate ionization is passed through the cathode electrode through the loop of 1+N1 layer → A, 10th layer → P6 10th layer → gate electrode G2 for off-current extraction → diode 7 → external gate terminal GO- + DC power supply 31'I, and Turn off the main GTofc by ■. At this time, the auxiliary GTO includes anode electrode A to P1 layer → N1 layer → p, 10th layer → N2jQ− + auxiliary gate electrode GA → resistor R di → 10th layer of Pt → 10th layer of po → gate electrode for drawing off current. G! → Diode 7 → External gate terminal Go- + Current flows to DC power supply s'h. At this time, the voltage drop caused by the resistor R1 is P20N and Po''e
Since a reverse bias voltage is applied between the PT4 layer, N, and M9 through the PT4 layer, a part of the current flowing through the auxiliary GTO is transferred from the P1+ layer to the Po1 layer → the gate electrode G2 for extracting the off voltage. is drawn out. This ((Thus, the auxiliary GTO is turned off. In this way, the current at the time of turning off the auxiliary GTO cannot pass through the resistor i'tf!, so the current can be drawn out easily and the disconnection ability of the auxiliary GTO is increased. For this reason, it is possible to select a large value for the resistor P91, and by making the resistor R91 a large value in this way, the durability at turn-on is improved.

In addition, even if the resistor R6l is set to a large value, the current at turn-off does not flow through the resistor R6l, so the breaking ability does not decrease.Furthermore, the current at the turn-off of the main GTO does not flow through the resistor R92, so the resistor R By selecting an appropriate value for □, it is possible to measure the direction F of the ignition characteristic at turn/off.'I!'When the main GTO turns off/turns off, the 'M1 flow passes through resistance B1. Since there is no need for a Zener diode in the gate drive circuit, power loss in the gate drive circuit at the time of turn-off of ()To is reduced.

In the above embodiment, although the high concentration impurity layer p+ (formed embedded in the P base layer is composed of P 1 + Po + and P2+) is not limited to the on-current supply gate. P located in the projection area of electrode G1
It may also be formed embedded in the base layer. In addition, the gate control power supply circuit 3 is divided into an on-gate power supply and an off-gate power supply, and an external gate terminal Go and a diode? , and the gate electrode for supplying on-current () I
The gate electrode G2 for drawing off current may be connected to the on-gate power source, and the entire off-current drawing gate electrode G2 may be connected to the off-gate power source.

As described above, according to the present invention, the gate current at turn-off passes through the lateral resistances FT, l and RE11 of the P river, increasing the gate impedance of the GTO, and also increasing the gate impedance at turn-off. The current flows through the resistance R
Since the gate impedance of GTQ is reduced by not passing through p I + RE2, the entire GTO can be fired with a small amount of ignition ionization, improving the firing characteristics and making it easier to draw the current at turn-off. This will improve the GTO's i-cutting ability. Furthermore, since no current flows through the resistor R1 during turn-off, the value of the resistor R9 can be set to a large value, thereby increasing the π resistance during turn-on. Furthermore, since the current does not flow through the resistor R1 when the main GTO is turned off, and the Zener diode is not required in the gate drive circuit, power loss in the gate drive circuit when the GTO is turned off is reduced. It will be done.

[Brief explanation of the drawing]

FIG. 1 is a schematic configuration diagram of an amplification gate structure GTO having a conventional gate drive circuit, and FIG. 2 is an explanatory diagram showing the configuration of an amplification gate turn-off thyristor according to the present invention. GTQ/... Auxiliary G, TOSGTO, Z... Main GT
O1Gl...gate electrode for supplying on-state information, G2...
Gate electrode for extracting off-current, 0 person...Supplementary 1h gate electrode, P1++ po+ I P2+...High O degree impurity.

Claims (1)

[Claims] An auxiliary GTO section consisting of P+ N+ Pa Ng JF5, and an auxiliary GTO section provided on the same wafer as f'1.
11. A main GTO part consisting of one PIN + Po Ng layer, and a main GTO part made of a Ng layer, and a n
a gate electrode for supplying an on current; a gate electrode for drawing an off current provided on the surface of the Po layer at a position concentric with the gate electrode +c and sandwiching the 112 layer and the N3 layer; n, fl are provided on the surface of the Po layer at the outer periphery, which is concentric with the current supply gate electrode and spaced a predetermined distance from the N3 layer i. an auxiliary gate electrode connected to the electrode provided in the N2 layer; and a high concentration impurity layer p formed in the Po layer located in the projection area of the N2 layer; fL is embedded in the Po layer located in the projection area of the N3 layer.
t high concentration impurity layer p, + and the high concentration impurity layer p,
+ and P! The inner end of the po layer is connected to the P
, +, and the outer end of the high concentration impurity layer P is buried and connected to P2+. q that you have + and money! GTO of amplification gate jM 7* with j characteristic.