CN100490151C

CN100490151C - Controlled silicon structure used for CMOS electrostatic discharge protection

Info

Publication number: CN100490151C
Application number: CNB2006101177324A
Authority: CN
Inventors: 常欣; 金锋
Original assignee: Shanghai Hua Hong NEC Electronics Co Ltd
Current assignee: Shanghai Huahong Grace Semiconductor Manufacturing Corp
Priority date: 2006-10-30
Filing date: 2006-10-30
Publication date: 2009-05-20
Anticipated expiration: 2026-10-30
Also published as: CN101174629A

Abstract

The invention discloses a thyristor structure for CMOS static discharge protection, which is capable of both-way break-over and both-way flyback. The invention is characterized in that: a deep N well is longitudinally arranged on a P type substrate; a second N well, a second P well, a first N well, a first P well and another second N well are arranged transversely in parallel on the deep N well, and a P+ area and an N+ area are respectively transversely arranged in the second P well and the first P well in parallel; wherein, the P+ areas are close to the second N well, the N+ areas are near to the first N well, and the P+ areas and the N+ areas are divided by field oxide. The invention has the advantages of avoiding the defects in the traditional SCR structure such as single-way flyback feature, and meeting the demands for integration level.

Description

The SCR structure that is used for the CMOS electrostatic discharge (ESD) protection

Technical field

The present invention relates to a kind of SCR structure, particularly a kind of SCR structure that is used for the integrated circuit electrostatic discharge protection.

Background technology

Electrostatic Discharge has constituted very big threat to the reliability of cmos circuit.Along with development of integrated circuits, esd protection circuit is also constantly improving.In various esd protection circuits, controllable silicon (SCR) has negative resistance or flyback (Snapback) characteristic and extraordinary large current characteristic, therefore, still is in leading position in the ultra-large CMOS integrated circuit so far based on the electrostatic discharge protective circuit of SCR device.But the large current characteristic of SCR device is only relatively good in one direction, wants also to obtain same protective feature on another direction two the SCR devices that only are connected in parallel, the electrostatic induced current of the opposed polarity of releasing respectively.

Fig. 3 is the schematic diagram of a traditional SCR structure, and it consists of P-N-P-N four-level semiconductor structure, and this four-layer structure is P+ district, N trap, P trap, N+ district in regular turn.Adjacent P trap and N trap are set on the P type substrate, be arranged in parallel successively respectively in P trap and the N trap P+ district and N+ district, use oxygen is separated between each P+ district and the N+ district.Wherein P+ district, N well region and P trap are formed the pNP pipe; And N+ district, P trap and N well region are formed the NPN pipe.SCR when ESD impact to take place also as an one-port.Wherein anode (P+ in the N trap) and N trap short circuit, negative electrode (N+ in the P trap) and P trap short circuit, anode and electrostatic power sources join.Under the circuit normal running conditions, because the PN junction reverse bias between N trap and the P trap, the SCR structure is not opened.Therefore, it can not influence the operate as normal of circuit.But under the esd discharge condition, very big change can take place in the operating state of SCR structure.First kind of esd discharge situation is that input and output contact end (I/O PAD) current potential is positive with respect to source terminal (VSS) current potential.In this case, when the puncture voltage of esd discharge voltage, just there is the snowslide breakdown current to flow through from this PN junction above the PN junction between N trap and the P trap.When electric current is flowed through P trap resistance and N trap resistance, set up potential difference at the two ends of two resistance.The foundation of this potential difference makes that parasitic NPN pipe and the base stage and the emitter junction of PNP pipe all are in the forward bias state in the SCR structure; and then make SCR structure generation positive feedback phenomenon; current value sharply increases; retrace characteristic appears; thereby release the esd discharge electric current effectively, protect other circuit.Second kind of esd discharge situation is that the PAD terminal potential is born with respect to the VSS end.This moment, the characteristic of SCR was similar to the characteristic of diode, so do not have retrace characteristic in that this side up.

As from the foregoing, as the esd protection device, when ESD took place, the large current characteristic of SCR device was general only relatively good in one direction, promptly retrace characteristic can occur with SCR.If want on another direction, also to obtain same protective feature, only between PAD and VSS, be connected two SCR devices, the esd discharge electric current of the different polarity of releasing respectively, as shown in Figure 4.But design makes that the device circuitry area is excessive like this, and integrated level reduces.

Summary of the invention

The technical problem to be solved in the present invention provides a kind of SCR structure of the CMOS of being used for electrostatic discharge (ESD) protection, and it can two-way admittance, and has two-way retrace characteristic.

For solving the problems of the technologies described above; the SCR structure that the present invention is used for the CMOS electrostatic discharge (ESD) protection longitudinally is provided with dark N trap on P type substrate; on dark N trap along laterally be arranged in parallel successively the 2nd N trap, the 2nd P trap, a N trap, a P trap, the 2nd N trap; in the 2nd a P trap and a P trap along laterally be arrangeding P+ district and N+ district respectively in parallel; wherein; P+ district in the one P trap is near the two N trap adjacent with a P trap; and the P+ district in the 2nd P trap is near the two N trap adjacent with the 2nd P trap; separate with field oxygen between each P+ district and the N+ district near a N trap in the N+ district.

The SCR structure that the present invention is used for the CMOS electrostatic discharge (ESD) protection has realized a kind of novel SCR device architecture with two-way retrace characteristic; this structure has not only remedied traditional SCR structure and has only had the shortcoming of unidirectional retrace characteristic, and has satisfied the demand of integrated level simultaneously.

As a kind of improvement of the present invention, add a N+ diffusion region at an aforementioned N trap and an aforementioned P trap intersection, add the 2nd N+ diffusion region at a N trap and aforementioned the 2nd P trap intersection, use oxygen is separated between a N+ diffusion region and the 2nd N+ diffusion region, between a N+ diffusion region and the 2nd N+ diffusion region and the aforementioned N+ district.Add a N+ diffusion zone and add the 2nd N+ diffusion zone at a N trap and a P trap edge at a N trap and aforementioned the 2nd P trap edge, the avalanche breakdown voltage value is reduced, thereby the trigger voltage of this SCR structure on both direction all is reduced, makes the easier conducting of this structure reach the purpose of leakage current.

Description of drawings

Fig. 1 is the structural profile schematic diagram of one embodiment of the invention;

Fig. 2 is the structural profile schematic diagram of the preferred embodiment of the present invention, this figure illustrated embodiment is improvement embodiment illustrated in fig. 1, wherein, be provided with a N+ diffusion region (N+2) at a N trap (NW1) and P trap (PW1) edge, be provided with the 2nd N+ diffusion region (N+1) at a N trap and the 2nd P trap (PW2) edge;

Fig. 3 is a SCR structure schematic diagram in the prior art;

Fig. 4 is that the controllable silicon that is used for the CMOS electrostatic discharge (ESD) protection in the prior art connects and the operation principle schematic diagram;

Fig. 5 is the operation principle schematic diagram of preferred embodiment under PS static discharge pattern shown in Figure 2, and wherein avalanche breakdown occurs between a N trap and the 2nd P trap;

Fig. 6 is the operation principle schematic diagram of preferred embodiment under NS static discharge pattern shown in Figure 2, and wherein avalanche breakdown occurs between a N trap and the P trap;

Fig. 7 is the layout plan of preferred embodiment shown in Figure 2.

Embodiment

The present invention is further detailed explanation below in conjunction with accompanying drawing.

The SCR structure that the present invention is used for the CMOS electrostatic discharge (ESD) protection provides a kind of novel SCR structure with two-way Snapback characteristic, as shown in Figure 1, can satisfy the needs of CMOS electrostatic discharge (ESD) protection and the demand of integrated level simultaneously.Dark N trap longitudinally is set on P type substrate, on dark N trap along laterally be arranged in parallel successively the 2nd N trap, the 2nd P trap, a N trap, a P trap, the 2nd N trap, the edge laterally is provided with P+ district and N+ district respectively in the 2nd a P trap and a P trap, wherein, P+ district in the one P trap is near the two N trap adjacent with a P trap, and the close two N trap adjacent with the 2nd P trap in the P+ district in the 2nd P trap, separate with field oxygen between each P+ district and the N+ district near a N trap in the N+ district.Utilize dark N trap (Deep Nwell) that a P trap and the 2nd P trap and substrate isolation are opened in the structure, this structure can realize at common CMOS twin well process.It is to consider that dark N trap is set, if do not have dark N trap then a P trap can be short-circuited by P type substrate and the 2nd P trap, so will utilize dark N trap that the one P trap and the 2nd P trap and substrate isolation are opened.

In fact, structure provided by the present invention is two SCR cellular constructions aggregate is the NPNPN structure of a symmetry.Wherein, two SCR unit are made of B1-B2 and B2-B3 respectively, shared PNP triode of being made up of a P trap, a N trap and the 2nd P trap in the structure.Two SCR unit ESD voltage on the corresponding separately both direction are respectively opened, as the current drain path.Fig. 2 is a kind of improvement of structure shown in Figure 1, compares with structure shown in Figure 1, and structure shown in Figure 2 is provided with a N+ diffusion region, at a N trap and the 2nd P trap overlapping place the 2nd N+ diffusion region is set at a N trap the one P trap 1 overlapping place.Layout plan embodiment illustrated in fig. 2 as shown in Figure 7.

Fig. 5 is the operation principle schematic diagram of structure shown in Figure 2 under PS static discharge pattern (the electrostatic power sources current potential is positive with respect to the VSS end).When being the PS pattern for static discharge, a positive esd pulse is added on the I/O contact, and this moment, the I/O contact was an anode, and VSS is a negative electrode.The one a P trap and a N trap be positively biased at first, this moment, the NW current potential was roughly VESD-0.7V, because the 2nd P trap ground connection, then collector electrode (the 2nd P trap) is partially anti-with base stage (a N trap) with base stage (a N trap) knot positively biased for emitter (a P trap), and this just makes shared B2PNP pipe conducting.When ESD stress greatly to enough making the living avalanche breakdown of binding up one's hair of a N trap and the 2nd P trap, the flow through parasitic series resistance of the 2nd P trap of breakdown current is drawn high the 2nd P trap potential, when making the 2nd P trap and N+ district knot positively biased, like this by emitter (the N+ district in the 2nd P trap), the B3NPN pipe that base stage (the 2nd P trap) and collector electrode (a N trap) constitute is switched on, meanwhile second controllable silicon is triggered and enters conducting phase, the beginning leakage current.Fig. 5 has illustrated the direction and the equivalent circuit diagram thereof of its leakage current.

When the static discharge pattern is NS pattern (the electrostatic power sources current potential is born with respect to the VSS end) (as shown in Figure 6), a negative esd pulse is added on the I/O PAD, and this moment, VSS was an anode, and I/O PAD is a negative electrode.At first conducting of B2PNP so in like manner, when ESD stress greatly to enough making the living avalanche breakdown of binding up one's hair of N trap 1 and P trap 1, the flow through parasitic series resistance of a P trap of the holoe carrier electric current that puncture to produce is drawn high its current potential, when voltage reaches a P trap and N+ district knot positively biased, like this by emitter (the N+ district in the P trap), the B1NPN that base stage (a P trap) and collector electrode (a N trap) constitute is switched on, and meanwhile first controllable silicon is triggered and enters conducting phase, the beginning leakage current.Fig. 6 has illustrated the direction and the equivalent circuit diagram thereof of its leakage current.

Because being the PN junction avalanche breakdown voltage by a N trap and a P trap or a N trap and the 2nd P trap, the trigger voltage of this SCR determines that this magnitude of voltage is usually about tens volts even tens volts.If when requiring to obtain than the low trigger voltage value, then can in this structure, design a N+ diffusion region and the 2nd N+ diffusion region and be embedded in a N trap and a P trap and a N trap and the 2nd P trap overlapping place respectively, because the doping content of N+ diffusion region is than higher, so the avalanche breakdown voltage value reduces, thereby the trigger voltage of this SCR structure under two kinds of opposed polarity ESD emergence patterns all is reduced, makes the easier conducting of this structure reach the purpose of leakage current.

Claims

1, a kind of SCR structure that is used for the CMOS electrostatic discharge (ESD) protection is characterized in that:

Dark N trap longitudinally is set on P type substrate, on dark N trap along laterally be arranged in parallel successively the 2nd N trap, the 2nd P trap, a N trap, a P trap, the 2nd N trap;

In the 2nd a P trap and a P trap along laterally be arrangeding P+ district and N+ district respectively in parallel, wherein, P+ district in the one P trap is near the two N trap adjacent with a P trap, and the P+ district in the 2nd P trap is near the two N trap adjacent with the 2nd P trap, separate with field oxygen between each P+ district and the N+ district near a N trap in the N+ district.

2, the SCR structure that is used for the CMOS electrostatic discharge (ESD) protection according to claim 1 is characterized in that, a described N trap and a described P trap intersection are provided with a N+ diffusion region, at a N trap and described the 2nd P trap intersection the 2nd N+ diffusion region is set; Use oxygen is separated between the one N+ diffusion region and the 2nd N+ diffusion region, between a N+ diffusion region and the 2nd N+ diffusion region and the described N+ district.