JPS59219804A - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
- Publication number
- JPS59219804A JPS59219804A JP58096312A JP9631283A JPS59219804A JP S59219804 A JPS59219804 A JP S59219804A JP 58096312 A JP58096312 A JP 58096312A JP 9631283 A JP9631283 A JP 9631283A JP S59219804 A JPS59219804 A JP S59219804A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- composition
- dielectric constant
- dielectric
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は焼成温度が低く、大きい誘電率を有し温度特性
に優れ、さらに誘電体損失の小さいセラセラミックコン
デンザ用の高誘電率材料としてはチタン酸バリウム系の
材料が広く用いら汎ている。この系の材料が有している
比誘電率は、その温度特性と密接な関係にあり、ＪＩ’
Ｓ規格に定めら几だＹ級Ｆ特性（誘電率”の温度変化が
〜２６〜８６℃の温度範囲で２０°Ｃの値全基準として
＋３０％、−８０％以内）を満たす材料としては比誘電
率が１００００程度、Ｙ級り特性（前述の条件で＋２０
％、−３０％以内）を満たす材料では比誘電率が４００
０程度である。このチタン酸バリウム系の材料は誘電体
損失ｔａｎδも低く、その他の緒特性も優几ているが、
その焼成には１３ｏＯ〜１４００’Ｃという相当高い温
度を必要とする０そのため、この系の材料を積層セラミ
ックコンデンサに用いるときには、内部電極として高価
な白金系の電極が必要となるｇ一方、９００°Ｃ前後の
低温で焼成が可能な材料として、Ｐ ｂ （Ｆ Ｂ１１
２Ｎｂ １１２）０５− Ｐｂ （ｙｅＨＷｙ、）０３
系等の誘電体材料が知られている。これらは室温の比誘
電率が１００００〜２００００と大きい値を有するが、
その温度変化率も大きく、前述のＹ級り特性を満たす材
料は知られていない。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention uses titanium as a high dielectric constant material for ceramic capacitors that has a low firing temperature, a large dielectric constant, excellent temperature characteristics, and low dielectric loss. Barium acid-based materials are widely used. The dielectric constant of this type of material is closely related to its temperature characteristics, and JI'
It is unique as a material that satisfies the strict Y-class F characteristics (temperature change in dielectric constant within +30% and -80% as all standards at 20°C in the temperature range of ~26 to 86°C) stipulated in the S standard. Dielectric constant is about 10,000, Y-class characteristics (+20 under the above conditions)
%, within -30%), the dielectric constant is 400.
It is about 0. This barium titanate-based material has a low dielectric loss tan δ and other excellent properties, but
Firing requires a fairly high temperature of 13oO to 1400'C.Therefore, when this type of material is used in multilayer ceramic capacitors, expensive platinum-based electrodes are required as internal electrodes. P b (F B11
2Nb 112)05-Pb (yeHWy,)03
Dielectric materials such as those based on dielectric materials are known. These have a large dielectric constant of 10,000 to 20,000 at room temperature,
The temperature change rate is also large, and no material is known that satisfies the above-mentioned Y class characteristics.
民生用電子機器で使用されているコンデンサの大手は、
その温度特性としてＹ級り特性に相当するものであるた
め、９００°Ｃ前後の温度で焼成可能であり、温度特性
の優れたコンデンサ材料が得られるならば、その工業的
価値は犬である。The major manufacturers of capacitors used in consumer electronics are
Since its temperature characteristics correspond to Y-class characteristics, it can be fired at a temperature of around 900°C, and if a capacitor material with excellent temperature characteristics can be obtained, its industrial value is significant.
発明の目的
本発明は、焼成温度が８６０〜９６０°Ｃと低く、チタ
ン酸バリウム系でＹ級り特性を満たす材料の比誘電率と
同等以上、すなわち４０００以上の比誘電率を有し、か
つ−２６°〜８６℃の温度範囲で誘電体損失ｔａｎδが
小さい磁器組成物を提供することを目的とする。Purpose of the Invention The present invention has a low firing temperature of 860 to 960°C, a dielectric constant equal to or higher than that of a barium titanate-based material satisfying grade Y characteristics, that is, a dielectric constant of 4000 or higher, and It is an object of the present invention to provide a ceramic composition having a small dielectric loss tan δ in the temperature range of -26° to 86°C.
発明の構成
本発明の誘電体磁器組成物は、Ｐｂ（ＭｇｙＮｂ％）Ｘ
（Ｚ ｎ Ｖ３Ｎ ｂ２１３）ｙ （Ｆ６％Ｗ Ｈ）ｚ
Ｏｓ ＋ Ｗ重量％Ｊ１０２の組成物において、ｘ、
ｙ、ｚが図に示す多角形ＡＢＣＤＲの範囲内の組成にあ
り、さらにＭｎＯ，。Structure of the Invention The dielectric ceramic composition of the present invention includes Pb (MgyNb%)
(Z n V3N b213)y (F6%W H)z
In the composition of Os + W wt% J102, x,
y and z have a composition within the range of polygon ABCDR shown in the figure, and furthermore, MnO.
をｏ、０６〜１重量９も含むことを特徴とする。It is characterized by also containing o, 06 to 1 weight 9.
実施例の説明
原料として化学的に高純度のＰｂＯ、ＭｇＯ，Ｎｂ２Ｏ
５゜ＺｎＯ，Ｆｅ２Ｏ３，ＷＯ３，ＭｎＯ２を下表の組
成に従って秤量し、めのうの玉石と純水を加えてポリエ
チレンボットで１６時間混合し、乾燥した後、７６０℃
で２時間仮焼し、さらに前述のボットで１６時間粉砕し
て乾燥させた０その後、ポリビニルアルコール水溶液を
バインダとして加え、直径１３ｍｍ。Description of Examples Chemically high purity PbO, MgO, Nb2O as raw materials
5゜Weigh ZnO, Fe2O3, WO3, and MnO2 according to the composition in the table below, add agate cobbles and pure water, mix in a polyethylene bottle for 16 hours, dry, and then heat to 760℃.
The powder was calcined for 2 hours, then crushed and dried in the aforementioned bot for 16 hours. Thereafter, an aqueous polyvinyl alcohol solution was added as a binder to give a diameter of 13 mm.
高さ１０ｍｍの円柱状に加圧成形し、バインダを焼却し
た後、マグネシア磁器容器に入ｎ、８６０〜９５０’Ｃ
で２時間焼成した。得らｎたＰｂ（ＭｇＶ３Ｎｂ％）ｘ
（ＺｎｙＮｂ、４）、 （Ｆ ｅＨＷｌ、６．） ２
０ ｓ ＋ Ｗ重量％ＭｎＯ２なる組成の磁器焼成物を
厚さ１ ｍｍに切断し、両面にＣｒ−Ａｕを蒸着して電
極を形成し、２０℃の温度下での比誘電率εｒと誘電正
接ｔａｎδ およびその温度変化をＩ ＫＨｚ 、 Ｉ
Ｖ／ｍｍの電界で測定した。これらの結果を表に示す
。Pressure-formed into a cylindrical shape with a height of 10 mm, incinerated the binder, and then placed in a magnesia porcelain container at 860-950'C.
It was baked for 2 hours. Obtained Pb (MgV3Nb%) x
(ZnyNb, 4), (F eHWl, 6.) 2
A fired porcelain product with a composition of 0 s + W weight% MnO2 was cut into 1 mm thick pieces, Cr-Au was deposited on both sides to form electrodes, and the relative permittivity εr and dielectric loss tangent at a temperature of 20°C were determined. tanδ and its temperature change as I KHz, I
Measurements were made at an electric field of V/mm. These results are shown in the table.
以下余白
表において、＊印を付した試料は本発明の範囲外の試料
である。本発明の範囲内の試料は全て−２６°〜８６℃
の温度範囲で２０℃の値を基準とする比誘電率ε１の変
化率が一３０％〜＋２０％の範囲内であり、ＪＩＳ規格
に定めら汎た７級り特性の温度変化率を満足する。さら
に、比誘電率ε１はチタン酸バリウム系の材料と同等以
上の４１ｏＯ〜６６００を示し、その誘電損失を表わす
ｔａｎδも室温で１９６以下、−２５〜８５°Ｇの温度
範囲に２いてみても２．６％以下である。組成式％式％
）
（だこしＸ＋７−１−Ｚ＝＝１）のｘ 、ｙ 、ｚが図
に示す沖
Ａ、Ｂ、Ｃ，Ｄ、Ｅの五点’を活魚とする多角形の領域
外では、温度変化率が７級り特性を満足しないので、本
発明の範囲から除か几る。寸だ、ＭｎＯ２の添加量が０
．０５重量％よりも少ないと室温より高い温ＩＷ下での
損失が大きく、ｔａｎδで表わして１０％以上にも達し
、コンデンサとしては機能しなくなり、１だ、ＭｎＯ２
の添加量が１重量％全越えるとやはり誘電体損失が大き
くなるので、本発明の範囲から除かｎる。In the margin table below, samples marked with * are samples outside the scope of the present invention. All samples within the scope of the present invention range from -26° to 86°C.
The rate of change in relative dielectric constant ε1 is within the range of 130% to +20% with reference to the value of 20℃ in the temperature range of . Furthermore, the dielectric constant ε1 is 41oO to 6600, which is equal to or higher than that of barium titanate-based materials, and the tan δ, which represents dielectric loss, is less than 196 at room temperature and 2 even in the temperature range of -25 to 85°G. .6% or less. Composition formula % formula %
) (Dakoshi It is excluded from the scope of the present invention because its ratio does not satisfy the 7th grade characteristic. The amount of MnO2 added is 0.
．． If it is less than 0.05% by weight, the loss under IW temperature higher than room temperature will be large, reaching more than 10% expressed in tan δ, and it will no longer function as a capacitor.
If the amount added exceeds 1% by weight, the dielectric loss will increase, so it is excluded from the scope of the present invention.
発明の効果
以上述べてきたように、本発明による誘電体磁器組成物
に、ｌ：ｆＬば、比誘電率が太きく、また焼成温度が低
くてよいため、安価な内部電極材料全使用した積層型セ
ラミックコンデンサを作製することができる。無論、そ
の他のセラミックコンデンサに使用しても、大きな比誘
電率、低い焼成温度は非常に大きな長所となる。また、
その温度特性についても民生用電子機器に使用さｎてい
るコンデンサの大半分満足することができるので、本発
明の工業的価値は太きい。Effects of the Invention As described above, the dielectric ceramic composition according to the present invention has a large dielectric constant when l:fL, and requires a low firing temperature, so that it can be laminated using all inexpensive internal electrode materials. type ceramic capacitors can be manufactured. Of course, the large dielectric constant and low firing temperature are also great advantages when used in other ceramic capacitors. Also,
Since its temperature characteristics can satisfy most of the capacitors used in consumer electronic devices, the present invention has great industrial value.
図はＰｂ （ＺｎＶ３Ｎｂｙ、）Ｏｘ−Ｐｂ（ＭｇｙＮ
ｂＨ）０５−Ｐｂ（Ｆｅ％Ｗ１／１）０５三元系の組成
図である。The figure shows Pb (ZnV3Nby,)Ox-Pb(MgyN
bH)05-Pb(Fe%W1/1)05 ternary system composition diagram.
Claims (1)
７ （Ｆｅ％ ＷＨ） ｚ Ｏｓ系固溶体（たたし、ｘ
＋ｙ＋ｚ＝１）の三元系の組成図においてｘ＋ ３’
＋ ｚの値が下記点Ａ、Ｂ。 Ｃ，Ｄ、Ｅを頂点とする多角形の領域内の組成物を主成
分とし、さらに副成分としてＭｎＯ２を０．０６〜１重
量％添加含有させたことを特徴とする誘電体磁器組成物
。[Claims] Pb (Mg HNb213)x (Zn%Nb%-)
7 (Fe% WH) z Os-based solid solution (tatashi, x
+y+z=1) In the composition diagram of the ternary system, x+ 3'
+ The value of z is the following points A and B. A dielectric ceramic composition characterized in that the main component is a composition within a polygonal region having vertices C, D, and E, and further contains 0.06 to 1% by weight of MnO2 as a subcomponent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58096312A JPS59219804A (en) | 1983-05-30 | 1983-05-30 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58096312A JPS59219804A (en) | 1983-05-30 | 1983-05-30 | Dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59219804A true JPS59219804A (en) | 1984-12-11 |
| JPS6348134B2 JPS6348134B2 (en) | 1988-09-27 |
Family
ID=14161502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58096312A Granted JPS59219804A (en) | 1983-05-30 | 1983-05-30 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59219804A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54125499A (en) * | 1978-03-23 | 1979-09-28 | Nichicon Capacitor Ltd | Reduction type semiconductor porcelain composition |
| JPS5767209A (en) * | 1980-10-15 | 1982-04-23 | Nippon Electric Co | Porcelain composition |
-
1983
- 1983-05-30 JP JP58096312A patent/JPS59219804A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54125499A (en) * | 1978-03-23 | 1979-09-28 | Nichicon Capacitor Ltd | Reduction type semiconductor porcelain composition |
| JPS5767209A (en) * | 1980-10-15 | 1982-04-23 | Nippon Electric Co | Porcelain composition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6348134B2 (en) | 1988-09-27 |
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