JPH0249307A - Dielectric porcelain compound - Google Patents
Dielectric porcelain compoundInfo
- Publication number
- JPH0249307A JPH0249307A JP63200625A JP20062588A JPH0249307A JP H0249307 A JPH0249307 A JP H0249307A JP 63200625 A JP63200625 A JP 63200625A JP 20062588 A JP20062588 A JP 20062588A JP H0249307 A JPH0249307 A JP H0249307A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- mno
- mol
- temperature coefficient
- dielectric ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 12
- 150000001875 compounds Chemical class 0.000 title abstract 5
- 239000000203 mixture Substances 0.000 claims abstract description 39
- 239000000919 ceramic Substances 0.000 claims description 29
- 239000000654 additive Substances 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 11
- 238000009413 insulation Methods 0.000 abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 230000035939 shock Effects 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 5
- 239000003985 ceramic capacitor Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 3
- 229910017676 MgTiO3 Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229940093474 manganese carbonate Drugs 0.000 description 1
- 235000006748 manganese carbonate Nutrition 0.000 description 1
- 239000011656 manganese carbonate Substances 0.000 description 1
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 1
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は誘電体磁器組成物に係り、特に温度補償用磁器
コンデンサ、あるいは積層チップコンデンサへの利用に
適する誘電体磁器組成物に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a dielectric ceramic composition, and particularly to a dielectric ceramic composition suitable for use in a temperature-compensating ceramic capacitor or a multilayer chip capacitor.
例えば、温度補償用磁器コンデンサ等に用いられる誘電
体磁器組成物は、温度係数が比較的小さく、かつ誘電率
及びＱが高いことが望まれている。For example, dielectric ceramic compositions used in temperature-compensating ceramic capacitors and the like are desired to have a relatively small temperature coefficient and high dielectric constant and Q.
従来、化種の誘電体磁器組成物としては、ＣａＴｉ０ｓ
−ＭｇＴｉＯ３系、またはＣａＴｉ０ａＬａｚＯａ・２
ＴｉＯｚ−ＭｇＴｉＯ３系等が知られている。そしてこ
れらの組成物によれば、誘電率が２０〜１４０、温度係
数が＋１００〜−１０００ Ｘ １０−’／’Ｃの範囲
のものが得られている。Conventionally, as a dielectric ceramic composition of various types, CaTi0s
-MgTiO3-based or CaTi0aLazOa・2
TiOz-MgTiO3 systems and the like are known. These compositions have a dielectric constant of 20 to 140 and a temperature coefficient of +100 to -1000 x 10-'/'C.
しかし、これらの従来の誘電体磁器組成物は、常温での
誘電率と温度係数の関係が、誘電率が大きくなる程温度
係数の値も大きくなり、また、温度係数の値を小さくす
ると誘電率も小さくなるという関係にあった。このため
従来の誘電体磁器組成物では温度係数が小さくて誘電率
の大きいものを得ることができなかった。However, in these conventional dielectric ceramic compositions, the relationship between the dielectric constant and the temperature coefficient at room temperature is such that the larger the dielectric constant, the larger the temperature coefficient, and the smaller the temperature coefficient, the larger the dielectric constant. There was also a relationship in which the size of the For this reason, with conventional dielectric ceramic compositions, it has been impossible to obtain a composition with a small temperature coefficient and a large dielectric constant.
また、これらの従来の誘電体磁器組成物は耐還元性に弱
く、銅電極焼付けのため還元性雰囲気で電極焼付けを行
うと誘電体素体が還元され、Ｑの劣化、絶縁抵抗の劣化
等が生じる欠点があった。In addition, these conventional dielectric ceramic compositions have low resistance to reduction, and if the electrode is baked in a reducing atmosphere for baking the copper electrode, the dielectric element will be reduced, resulting in deterioration of Q, insulation resistance, etc. There were drawbacks that occurred.
また、これら従来の誘電体磁器組成物の焼結体では結晶
粒子の焼成温度依存性が大きく、そのため均質で安定し
た結晶粒子構造の誘電体素体が得られにくく、これが積
層セラミックコンデンサを形成した場合に、半田付は時
のサーマルショックによるクラックを発生させる原因に
なっていた。In addition, in the sintered bodies of these conventional dielectric ceramic compositions, the dependence of the crystal grains on the firing temperature is large, making it difficult to obtain a dielectric body with a homogeneous and stable crystal grain structure, which makes it difficult to form multilayer ceramic capacitors. In some cases, soldering caused cracks due to thermal shock.
本発明は、従来の問題点を解決し、誘電率及びＱが大き
く、しかも温度係数が小さく、耐還元性及び耐サーマル
ショック性の強い、新規な誘電体磁器組成物を提供する
ことを目的としている。The present invention aims to solve the conventional problems and provide a novel dielectric ceramic composition having a large dielectric constant and Q, a small temperature coefficient, and strong reduction resistance and thermal shock resistance. There is.
上記の如き問題点を解決するため、本発明ではＢａＴｉ
Ｏ３−Ｔｉ０２−Ｎｄ２０３・２ＴｉＯ２系誘電体磁器
組成物に対してＭｎＯを添加しており、上記誘電体磁器
組成物は、酸化物に換算して、ＢａＯ： Ｘモル％、Ｔ
ｉＯ２：Ｙモル％、ＮｄＯＬ：２モル％とするとき
１、５６≦Ｘ≦１３．２８
６５．９７≦Ｙ≦７４．８９
１１．８３≦Ｚ≦３２．４７
Ｘ＋Ｙ＋Ｚ＝ ｔ ｏ 。In order to solve the above problems, in the present invention, BaTi
MnO is added to the O3-Ti02-Nd203.2TiO2-based dielectric ceramic composition, and the dielectric ceramic composition has BaO: X mol%, T
When iO2: Y mol% and NdOL: 2 mol%, 1, 56≦X≦13.28 65.97≦Y≦74.89 11.83≦Z≦32.47 X+Y+Z=t o .
の組成範囲にある主成分に対してＭｎＯを０．Ｏ１〜０
．３ｗｔ％添加することを特徴とする。MnO was added to the main components in the composition range of 0. O1~0
．． It is characterized by adding 3 wt%.
そして、このような組成範囲にすることにより本発明の
目的とする誘電率及びＱが大きく、温度係数が小さく、
誘電率の温度特性が直線性であり、耐還元性及び耐サー
マルショック性の強い、例えば温度補償用として好適な
誘電体磁器組成物が得られることが判明した。By using such a composition range, the dielectric constant and Q, which are the objectives of the present invention, are large, the temperature coefficient is small, and
It has been found that a dielectric ceramic composition having linear temperature characteristics of dielectric constant, strong reduction resistance and thermal shock resistance, and suitable for use, for example, in temperature compensation, can be obtained.
本発明を実施例にもとづき詳細に説明する。 The present invention will be explained in detail based on examples.
炭酸バリウム、酸化チタン、酸化ネオジュウム、炭酸マ
ンガンを酸化物に換算して第１表の組成となるように配
合した。なお、表１においてＸはＢａＯのモル％、Ｙは
ＴｉＯ２のモル％、ＺはＮｄＯＴのモル％を表す。また
、ＭｎＯの添加量は、主成分に対するｗｔ（重量）％で
表しである。Barium carbonate, titanium oxide, neodymium oxide, and manganese carbonate were blended to have the composition shown in Table 1 in terms of oxides. In Table 1, X represents mol% of BaO, Y represents mol% of TiO2, and Z represents mol% of NdOT. Further, the amount of MnO added is expressed in wt (weight) % with respect to the main components.
上記出発原料を湿式混合し、脱水乾燥後１１００〜１２
００″Ｃにて２時間仮焼成した後ｌ１００ｊ１以下とな
るように粗粉砕し、その後再びボールミルにて湿式混合
、粉砕を行い脱水乾燥後粘着剤を加えて、これを１６．
５ｍｍφＸ０．６ｍｍｔの円板状に成形し、１２８０〜
１４００℃の温度で２時間焼成した。なお、上記円板状
に成形する際に、２〜３トン／ｄの圧力を加えた。この
ようにして得られた誘電体磁器の両面に銀電極を８００
℃で焼付けてコンデンサとした後、その誘電率とＱ値及
び温度係数Ｔ、Ｃ（ＰＰＭ／’Ｃ） 、絶縁抵抗１．
Ｒを測定した。ここで誘電率とＱはＩＭＨｚの周波数
で横河電機製作所製Ｑメータを用いて測定した。The above starting materials were wet mixed and after dehydration and drying, 1100 ~ 12
After pre-calcining at 00''C for 2 hours, it was coarsely ground to less than l100j1, then wet mixed and ground again in a ball mill, dehydrated and dried, an adhesive was added, and this was mixed in step 16.
Formed into a disc shape of 5 mmφ x 0.6 mmt, 1280 ~
It was baked at a temperature of 1400°C for 2 hours. In addition, when forming into the said disk shape, the pressure of 2-3 tons/d was applied. Silver electrodes were placed on both sides of the dielectric porcelain thus obtained.
After baking at ℃ to make a capacitor, its dielectric constant, Q value, temperature coefficient T, C (PPM/'C), insulation resistance 1.
R was measured. Here, the dielectric constant and Q were measured using a Q meter manufactured by Yokogawa Electric Corporation at a frequency of IMHz.
また、温度係数Ｔ−Ｃば温度２０℃における誘電率ε２
゜の値を基準にし、次式により算出した。In addition, the temperature coefficient T-C is the dielectric constant ε2 at a temperature of 20°C.
It was calculated using the following formula based on the value of °.
Ｔ−Ｃ＝ε、８５°Ｃ−ε、２０″Ｃ／ε、２０°Ｃ（
Ｔａｓ−Ｔｚｅ）ｘＰＰＭ／”Ｃ
但し ε、８５’Ｃは温度８５℃における誘電率ε、
２０℃は温度２０℃における誘電率Ｔ’ｍｓは温度８５
°Ｃ
Ｔ２゜は温度２０°Ｃ
そして、これらの結果を第１表に示す。T-C=ε, 85°C-ε, 20″C/ε, 20°C (
Tas-Tze) x PPM/"C However, ε, 85'C is the dielectric constant ε at a temperature of 85℃,
The dielectric constant T'ms at 20℃ is 85℃.
°C T2° is a temperature of 20°C and these results are shown in Table 1.
この第１表において試料番号１．２．６、ｌＬ１２．１
４．１６．１７．１８は本発明の組成範囲外のものであ
り、試料番号３．４．５．７．８．９．１０．１３．１
５．１９．２０は本発明の組成範囲内のものである。In this Table 1, sample number 1.2.6, lL12.1
4.16.17.18 is outside the composition range of the present invention, sample number 3.4.5.7.8.9.10.13.1
5.19.20 is within the composition range of the present invention.
以下余白
本発明の組成範囲を限定した理由は次の通りである。Ｂ
ａＯが１３．２８モル％を超えるとＱが低くなり、１．
５６モル％未満では誘電率とＱが低（なり、また、焼結
性も悪くなる。ＴｉＯ２が６５．９７モル％未満では焼
結性が悪く誘電率、Ｑ、絶縁抵抗（］、Ｒ）が低くなり
、７４．８９モル％を超えると誘電率、Ｑが低く、温度
係数（Ｔ。The reasons for limiting the composition range of the present invention are as follows. B
When aO exceeds 13.28 mol%, Q becomes low, and 1.
If TiO2 is less than 56 mol%, the dielectric constant and Q will be low, and the sinterability will also be poor. If TiO2 is less than 65.97 mol%, the sinterability will be poor and the dielectric constant, Q, insulation resistance (], R) will be poor. If it exceeds 74.89 mol%, the dielectric constant and Q will be low, and the temperature coefficient (T) will be low.
Ｃ）が−側に大きくなる。C) becomes larger on the negative side.
また、ＮｄＯ３／２が１１．８３モル％未満では温度係
数が一例へ太き（なり、誘電率は小さくＱも小さい、３
２．４７モル％を超えると誘電率が小さく、温度係数は
＋側へ大きくなり実用的でない。第１図は、本発明の誘
電体磁器組成物の主成分の組成範囲を実線で示している
。なお第１表中試料番号２〜６は試料番号ｌと同じ位置
になる。In addition, when NdO3/2 is less than 11.83 mol%, the temperature coefficient becomes thick (becomes), the dielectric constant is small and Q is small, 3
If it exceeds 2.47 mol %, the dielectric constant will be small and the temperature coefficient will increase toward the + side, making it impractical. FIG. 1 shows the composition range of the main components of the dielectric ceramic composition of the present invention with solid lines. Note that sample numbers 2 to 6 in Table 1 are at the same position as sample number l.
また、第２図は本発明の範囲内の主成分に対し種々の量
のＭｎＯを添加して誘電体磁器素体を形成し、これに銅
電極を還元性雰囲気中で焼き付けた場合のＭｎＯの添加
量と絶縁抵抗（１，Ｒ）の関係を示している。同図から
明らかなようにＭｎ０の添加量が０．０１ｗｔ％未満で
は絶縁抵抗（１，Ｒ）が低く、０．３％を超えるとＱが
悪化し焼結体がポーラスになりコンデンサとして実用的
でない。Figure 2 shows the results of MnO when a dielectric ceramic body is formed by adding various amounts of MnO to the main components within the scope of the present invention, and a copper electrode is baked on this body in a reducing atmosphere. The relationship between the amount of addition and insulation resistance (1, R) is shown. As is clear from the figure, when the amount of Mn0 added is less than 0.01wt%, the insulation resistance (1,R) is low, and when it exceeds 0.3%, Q deteriorates and the sintered body becomes porous, making it difficult to use as a practical capacitor. Not.
これに対して、ＢａＯが１．５６〜１３．２８モル％、
ＴｉＯ２が６５．９７〜７４．８９モル％、Ｎ ｄ Ｏ
３／２力月１．８３〜３２．４７モル％の組成範囲の主
成分に対してＭｎＯを０．０１〜０．３ＱｗＬ％添加し
た誘電体磁器組成物では誘電率が５７〜１１３、Ｑが８
０００〜１５０００、温度係数が＋１１０〜−３６０ｐ
ｐｍ／”Ｃの範囲をカバーしている。これは温度補償用
磁器コンデンサのＪＩＳ規格に関するＡＨ特性（＋１１
００ｐｐ／°Ｃ）〜ＳＨ特性（−３３０ｐ ｐ ｍ／”
Ｃ）の広い範囲の緒特性を満足している。On the other hand, BaO is 1.56 to 13.28 mol%,
TiO2 65.97-74.89 mol%, N d O
3/2 A dielectric ceramic composition in which 0.01 to 0.3 QwL% of MnO is added to the main component in the composition range of 1.83 to 32.47 mol% has a dielectric constant of 57 to 113 and a Q of 1.83 to 32.47 mol%. 8
000~15000, temperature coefficient +110~-360p
pm/”C. This covers the AH characteristics (+11
00pp/°C) to SH characteristics (-330pp m/”
C) satisfies a wide range of characteristics.
また、ＭｎＯの添加により誘電体素体への銅電極の焼付
けが可能となっている。銅電極を焼き付ける場合には銅
の酸化を防ぐため還元性雰囲気での焼付けが必要になる
が、従来の誘電体磁器組成物では還元性雰囲気での焼付
けにより誘電体素体自体の絶縁抵抗が低下するため銅電
極の使用ができなかったが、本発明の誘電体磁器組成物
ではこの恐れがないため、銀電極に比較して安価な銅電
極の使用が可能である。また、銅基外にもＮｉ、へ！等
、酸化し易い金属の電極への使用が可能となる。当然の
ことながら銀電極を使用するとき絶縁抵抗を向上するこ
とができる。Furthermore, the addition of MnO makes it possible to bake copper electrodes onto the dielectric element. When baking copper electrodes, baking is required in a reducing atmosphere to prevent oxidation of the copper, but with conventional dielectric ceramic compositions, baking in a reducing atmosphere reduces the insulation resistance of the dielectric element itself. However, since the dielectric ceramic composition of the present invention does not have this risk, copper electrodes, which are cheaper than silver electrodes, can be used. In addition, Ni is also added to the copper base! It becomes possible to use metals that are easily oxidized, such as, for electrodes. Naturally, the insulation resistance can be improved when using silver electrodes.
また、第３図は誘電体磁器素体の結晶状態を２０００倍
に拡大した写真であり、第３図Ａは本発明の誘電体磁器
組成物からなる誘電体磁器素体、同図Ｂは従来の誘電体
磁器素体を写している。この図から分かるように本発明
に係る磁器素体は従来のものと比べて棒状の均一な結晶
がマトリックス状に入り組んだ結晶構造をしている。そ
のため、本発明に係る誘電体磁器は耐サーマルショック
性が強く、半田付は等の際に受ける３００〜４００℃の
熱衝撃に対しても抵抗力があり、クラック等の発生が回
避できる。Furthermore, Fig. 3 is a photograph of the crystalline state of the dielectric porcelain element magnified 2000 times, in which Fig. 3A shows the dielectric porcelain element made of the dielectric porcelain composition of the present invention, and Fig. 3B shows the conventional dielectric porcelain element. This photo shows a dielectric porcelain body. As can be seen from this figure, the porcelain body according to the present invention has a crystal structure in which uniform rod-shaped crystals are intricately arranged in a matrix shape, compared to the conventional ceramic body. Therefore, the dielectric ceramic according to the present invention has strong thermal shock resistance, and is resistant to thermal shock of 300 to 400°C during soldering, etc., and can avoid the occurrence of cracks and the like.
なお、本発明の誘電体磁器組成物は添加物としてＳｉ、
Ｃｒ、Ｃａ、Ｚｎ、Ｌａ、Ｐｒ等を含有する場合にも同
等の電気特性のものが得られる。Note that the dielectric ceramic composition of the present invention contains Si,
Similar electrical properties can be obtained even when Cr, Ca, Zn, La, Pr, etc. are contained.
また、これらの添加物を含有する場合、誘電体磁器組成
物の焼結性を向上させることができる。Furthermore, when these additives are contained, the sinterability of the dielectric ceramic composition can be improved.
本発明は上記の如く、誘電率及びＱが大きく、しかも温
度係数が小さい誘電体磁器組成物を提供できる。また、
本発明の誘電体磁器組成物は耐還元性が高く、磁器コン
デンサ、積層チップコンデンサ等を形成する場合に、銀
電極に比べて安価な銅、あるいはＡｆ、Ｎｉ等の酸化し
易い金属の電極への使用が可能となる。また、耐サーマ
ルショック性が高く、そのため誘電体の薄い層を積層す
る積層コンデンサ等において、従来しばしば見られた半
田付は時の熱衝撃によるクラックの発生も本発明の誘電
体磁器組成物を用いる場合には回避できる等、実用的安
値も大きい。As described above, the present invention can provide a dielectric ceramic composition that has a large dielectric constant and Q, and a small temperature coefficient. Also,
The dielectric ceramic composition of the present invention has high reduction resistance, and when forming ceramic capacitors, multilayer chip capacitors, etc., it can be used as electrodes of copper, which is cheaper than silver electrodes, or metals that are easily oxidized such as Af and Ni. It becomes possible to use In addition, the dielectric ceramic composition of the present invention has high thermal shock resistance, and therefore, the use of the dielectric ceramic composition of the present invention prevents the occurrence of cracks due to thermal shock during soldering, which was often seen in the past in multilayer capacitors etc. in which thin layers of dielectric are laminated. The practical low price is also great, as it can be avoided in some cases.
表す３成分系図、第２図は銅電極を形成した磁器コンデ
ンサの絶縁抵抗とＭｎＯとの添加量の関係を表す図、第
３図は誘電体磁器素体の結晶構造を表す写真であり、同
図Ａは本発明のもの、同図Ｂは従来品を示す。Figure 2 is a diagram showing the relationship between the insulation resistance of a ceramic capacitor with copper electrodes and the amount of MnO added, and Figure 3 is a photograph showing the crystal structure of the dielectric ceramic element. Figure A shows the product of the present invention, and Figure B shows the conventional product.
Claims (1)
２ＴｉＯ＿２系誘電体磁器組成物であって、酸化物に換
算して、ＢａＯ：Ｘモル％、ＴｉＯ＿２：Ｙモル％、Ｎ
ｄＯ３／２：Ｚモル％とするとき、 １．５６≦Ｘ≦１３．２８ ６５．９７≦Ｙ≦７４．８９ １１．８３≦Ｚ≦３２．４７ Ｘ＋Ｙ＋Ｚ＝１００ の組成範囲にある主成分に対してＭｎＯを０．０１〜０
．３０ｗｔ％添加することを特徴とする誘電体磁器組成
物。 （２）特許請求の範囲１記載の誘電体磁器組成物におい
て、添加物としてＳｉ、Ｃｒ、Ｃａ、Ｚｒ、Ｌａまたは
Ｐｒの酸化物を１種以上含有することを特徴とする誘電
体磁器組成物。[Claims] (1) BaTiO_3-TiO_2-Nd_2O_3.
2TiO_2-based dielectric ceramic composition, in terms of oxides, BaO:X mol%, TiO_2:Y mol%, N
When dO3/2: Z mol%, 1.56≦X≦13.28 65.97≦Y≦74.89 11.83≦Z≦32.47 For the main components in the composition range of X+Y+Z=100 and MnO from 0.01 to 0
．． A dielectric ceramic composition characterized by adding 30 wt%. (2) The dielectric ceramic composition according to claim 1, which contains one or more oxides of Si, Cr, Ca, Zr, La, or Pr as an additive. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63200625A JP2654112B2 (en) | 1988-08-11 | 1988-08-11 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63200625A JP2654112B2 (en) | 1988-08-11 | 1988-08-11 | Dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0249307A true JPH0249307A (en) | 1990-02-19 |
| JP2654112B2 JP2654112B2 (en) | 1997-09-17 |
Family
ID=16427488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63200625A Expired - Lifetime JP2654112B2 (en) | 1988-08-11 | 1988-08-11 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2654112B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5571767A (en) * | 1995-08-21 | 1996-11-05 | Ferro Corporation | Low fire X7R dielectric compositions and capacitors made therefrom |
| KR100264359B1 (en) * | 1997-12-30 | 2000-08-16 | 김종수 | Dielectric ceramic composition |
| CN108395242A (en) * | 2018-03-21 | 2018-08-14 | 宜兴市九荣特种陶瓷有限公司 | A kind of ceramic powder, the godet roller and preparation method thereof using the powder |
-
1988
- 1988-08-11 JP JP63200625A patent/JP2654112B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5571767A (en) * | 1995-08-21 | 1996-11-05 | Ferro Corporation | Low fire X7R dielectric compositions and capacitors made therefrom |
| KR100264359B1 (en) * | 1997-12-30 | 2000-08-16 | 김종수 | Dielectric ceramic composition |
| CN108395242A (en) * | 2018-03-21 | 2018-08-14 | 宜兴市九荣特种陶瓷有限公司 | A kind of ceramic powder, the godet roller and preparation method thereof using the powder |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2654112B2 (en) | 1997-09-17 |
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