JP3319024B2 - High dielectric constant dielectric porcelain composition - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high dielectric constant dielectric porcelain composition, and more particularly to a high dielectric constant dielectric porcelain composition having a small temperature change rate and a small dielectric loss.

[0002]

2. Description of the Related Art Conventionally, barium titanate-based porcelain compositions have been widely used as dielectric materials for high dielectric constant ceramic capacitors. Among the ceramic compositions of the barium titanate-based, as the material having a small temperature change rate in a high dielectric constant, generally, BaTiO ₃ - bismuth, BaTi
O ₃ -Nb ₂ O ₅ -MnO ₂ based Introduction Numerous compositions are known. In addition, recent ceramic multilayer capacitors are very often required to have a small size, a large capacity, and excellent high frequency characteristics.

[0003]

[SUMMARY OF THE INVENTION However, the above BaTiO ₃ - The bismuth porcelain composition, if you try to apply a laminated capacitor, and a bismuth palladium or platinum-palladium alloy and the dielectric in the internal electrode Due to the reaction, there was a problem that expensive platinum had to be used as the internal electrode. on the other hand,
BaTiO ₃ -Nb ₂ O ₅ -MnO ₂ based dielectric ceramic is is excellent in the addition-frequency characteristics that overcome the above problems, the molar ratio of Ba and Ti, i.e. Ba / Ti
When the ratio is 1 or less, in the ordinary production method, a plate-like or needle-like crystal secondary phase is precipitated on the surface of the obtained sintered body. When this secondary phase is produced in a multilayer capacitor, it undergoes plating growth when subjected to electrolytic plating, causing short-circuit failure between external electrodes. In addition, when the device is mounted on a substrate, the surface of the device becomes uneven due to the generation of a secondary phase, so that the device may be displaced when the device is sucked, thereby lowering the mounting rate. In addition, since a secondary phase is generated at the interface between the dielectric and the internal electrode, the internal electrode is pushed up during firing, and some discontinuous points of the internal electrode are formed, thereby causing a variation in capacitance. In addition, the composition range in which the rate of temperature change of the capacitance is small is very limited.

[0004]

Means for Solving the Problems In order to solve this problem, the dielectric ceramic composition of the present invention comprises xBa as a main component.
When expressed as O + yTiO ₂ + zDyO _3/2 (x + y + z = 1), niobium oxide falls within the range surrounded by a, b, c, d, and e shown in Table 1 above, and niobium oxide is converted to Nb ₂ O ₅ . with containing 0.6～2.4Wt% in terms of shape, 0.01～0.4W by converting the manganese oxide in the form of MnO ₂
It contains t%.

Alternatively, niobium oxide is converted into Nb ₂ O ₅ as a subcomponent with respect to the above main component in the form of 0.6 to 2.0.
Together containing 4wt%, 0.1~0.8wt% content and comprising a composition in terms of the cobalt oxide in the form of Co ₂ O _3, or as an accessory component to said main component, the niobium oxide Nb ₂ in terms of the shape of O ₅ containing 0.6~2.4wt%, and the manganese oxide cobalt oxide were Mn
Converted to O ₂ , Co ₂ O ₃ form, total 0.1-0.8 w
t% (however, tolerance applied with MnO ₂ in these is 0.01~0.40wt%) proposes a comprising composition.

[0006]

By using the dielectric ceramic composition of the present invention, the relative dielectric constant at room temperature has a high value of 2000 to 4700, and the dielectric loss (tan δ) is a small value of 1.1% or less. Above, the temperature change rate of the dielectric constant is JIS-
JD characteristics specified in C-5130 (in the temperature range of -25 ° C to 85 ° C, the temperature change of the dielectric constant is +
(Within 20% to -30%). Further, in the composition of the present invention, since the Ba / Ti ratio is larger than 1, a composition in which the generation of the secondary phase due to the excess of Ti is extremely small can be obtained.

[0007]

An embodiment of the present invention will be described below with reference to FIGS.

FIG. 1 is a ternary composition diagram for explaining the composition range of the main components of the high dielectric constant ceramic composition according to the present invention, and FIG. 2 is a view showing the manufacturing process of the high dielectric constant ceramic composition of the present invention. .

First, a high purity BaTiO ₃ powder whose Ba / Ti molar ratio is adjusted to 1 and BaCO ₃ , D
Each powder of y ₂ O ₃ , MnO ₂ , Co ₂ O ₃ , and Nb ₂ O ₅ was weighed so that the composition after firing was as shown in the following (Table 2), and a rubber lining with an agate ball was prepared. It was put into a ball mill together with pure water, wet-mixed for 18 hours, and then dehydrated and dried.
To this, PVA (polyvinyl alcohol) binder 5w
After adding an appropriate amount of t% solution and granulating, 1.5 ton / cm ²
Into a disk having a diameter of 16 mm and a thickness of 0.6 to 0.8 mm. Next, the molded product was held at 1250 to 1350 ° C. for 2 hours and fired. At this time, the temperature at which the density of the sintered body becomes maximum is set as the optimum firing temperature, Ag electrodes are baked on both surfaces of the disc of the obtained sintered body to form capacitors, and each electric characteristic is measured at a frequency of 1 kHz and a room temperature of 20 ° C. The capacity temperature change rate was measured based on the capacity at 20 ° C. Each measurement result is shown in (Table 3).

[0010]

[Table 2]

[0011]

[Table 3]

Here, as shown in Table 3, the sample No.
The samples 1, 4 and 7 satisfy the JD characteristics according to the JIS-C-5130 standard.
The rate of change in capacity at ° C. and the rate of change at the Curie point are shown as (ΔC / C ₂₀ ) _max . On the other hand, for other samples, JIS-C-51 with more strict standards was used.
It satisfies the DR characteristics in the 30 standard, the capacity change rate at -25 ° C and 85 ° C, and -55 to 12 at that time.
The maximum rate of change in the 5 ° C. range is shown as | ΔC / C ₂₀ | _max .

FIG. 1 shows a ternary composition diagram for explaining the composition range of the main component in the composition of the present invention as described above, and is surrounded by a straight line connecting a, b, c, d, and e in the figure. The ternary component contained in the region defined is the composition of the present invention.

Next, the reasons for limiting the composition range of the present invention are shown in FIG.
This will be described with reference to FIG. First, the rate of change in capacitance is higher above the straight line ae, and does not satisfy the JD characteristics in JIS-C-5130 standard. Further, sintering is difficult at the left side of the straight line abc, which is not practical. Furthermore, below the line cd, the effect of adding Dy ₂ O ₃ is thin,
The dielectric constant is lowered and the sinterability is poor. Then, on the right side of the straight line de, a secondary phase is remarkably generated on the surface of the sintered body, and the dielectric constant is in a decreasing direction, which is not practical.

Further, Nb—Mn, Nb—
In the combination of Co or Nb-Mn-Co,
If Nb ₂ O ₅ is less than 0.6 wt%, the sinterability deteriorates, and the dielectric loss increases. On the other hand, if Nb ₂ O ₅ exceeds 2.4 wt%, the dielectric constant decreases, which is not practical. If the content of MnO ₂ is less than 0.01% by weight, there is no effect of adding MnO ₂ .
If it exceeds 40% by weight, the dielectric constant decreases and the rate of change in capacitance with temperature increases, which is not practical. Further, Co ₂ O ₃
Similarly, when the content exceeds 0.8 wt%, the dielectric constant decreases, and the rate of change in capacitance with temperature increases. On the other hand, when the content is less than 0.1 wt%, there is no effect of the addition, which is not practical.

In the combination of Nb—Mn—Co, MnO ₂ and Co ₂ O ₃ may be added in a total amount of 0.1 to 0.8 wt% with respect to the main component. The allowable range to which MnO ₂ is added is 0.01 to 0.40 wt% as is clear from the above description.

In the method of manufacturing the dielectric porcelain in the embodiment, oxides such as BaCO ₃ , Nb ₂ O ₅ , MnO ₂ , Dy ₂ O ₃ are used, but the present invention is not limited to this method.
After firing, the same characteristics can be obtained by using a carbonate, a hydroxide, or the like so as to obtain a desired composition. Also,
Even if the main component is calcined in advance and the subcomponent is added, the same characteristics as those of the embodiment can be obtained.

[0018]

The dielectric porcelain composition of the present invention has a high relative dielectric constant of about 2000 to 4500, a low dielectric loss (tan δ) of 1.1% or less, and a high dielectric constant. The rate of temperature change is based on J specified in JIS-C-5130.
Satisfies the D characteristics. In addition, since bismuth that easily reacts with palladium is not contained in the composition, palladium alone can be used as the internal electrode. Furthermore, since the generation of the secondary phase on the surface of the sintered body is extremely small, when used for a multilayer chip capacitor, it is possible to manufacture a stable element with little plating and little variation in capacity. Further, when mounted on a substrate, the element can be stably mounted, which is extremely useful in industrial use.

[Brief description of the drawings]

FIG. 1 is a ternary composition diagram illustrating a composition range of a main component of a high dielectric constant dielectric porcelain composition according to the present invention.

FIG. 2 is a view showing a manufacturing process of a high dielectric constant dielectric porcelain composition according to the present invention.

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-2-64060 (JP, A) JP-A-2-116667 (JP, A) JP-A-55-53007 (JP, A) JP-A-5-53007 54717 (JP, A) (58) Field surveyed (Int. Cl. ⁷ , DB name) H01B 3/12 303 C04B 35/46 H01G 4/12 358

Claims (3)

(57) [Claims] 1. The main component is xBaO + yTiO ₂ +
zDyO _3/2 ( where x, y, and z represent molar ratios and x + y
+ Z = 1 ). In the range surrounded by straight lines connecting a, b, c, d, e-shown, and as a secondary component to said main component in terms of niobium oxide in the form of Nb ₂ O ₅ 0.6 to A high dielectric constant dielectric porcelain composition containing 2.4 wt% and 0.01 to 0.40 wt% of manganese oxide in terms of MnO ₂ . 2. The method according to claim 1, wherein the auxiliary component comprises
The replacement of cobalt oxide Ngan, comprising 0.1～0.8Wt% in terms of Co ₂ O ₃ according to claim 1 high permittivity dielectric ceramic composition. 3. The method of claim 1, wherein the auxiliary component comprises
The manganese is replaced with manganese oxide and cobalt oxide, which are converted to MnO ₂ and Co ₂ O ₃ , respectively, to obtain a total of 0.1 to 0.1.
8 wt% (however, tolerance applied with MnO ₂ in these 0.01～0.40Wt% is) comprising Claim 1 high permittivity dielectric ceramic composition.