JP3469910B2 - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
- Publication number
- JP3469910B2 JP3469910B2 JP29317092A JP29317092A JP3469910B2 JP 3469910 B2 JP3469910 B2 JP 3469910B2 JP 29317092 A JP29317092 A JP 29317092A JP 29317092 A JP29317092 A JP 29317092A JP 3469910 B2 JP3469910 B2 JP 3469910B2
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- Prior art keywords
- dielectric
- porcelain
- composition
- dielectric loss
- present
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- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、チタン酸バリウムを主
成分とする誘電体磁器組成物に関し、詳細には、積層型
磁器コンデンサに適し、高温での寿命性能に優れた誘電
体磁器組成物に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric ceramic composition containing barium titanate as a main component, and more particularly to a dielectric ceramic composition suitable for a laminated ceramic capacitor and having excellent life performance at high temperature. Regarding
【0002】[0002]
【従来技術】従来から、BaTiO3 は高誘電率を有す
る材料として知られており、コンデンサ材料として多用
されている。しかしながら、BaTiO3 は、それ自体
では比誘電率の温度依存性が大きいことや誘電損失が大
きいために実用的でないことから、BaTiO3 以外に
各種の金属酸化物を添加することにより特性の改善が行
われている。2. Description of the Related Art BaTiO 3 has hitherto been known as a material having a high dielectric constant and is widely used as a capacitor material. However, BaTiO 3 is not practical because it has a large temperature dependence of the relative permittivity and a large dielectric loss, and therefore the addition of various metal oxides other than BaTiO 3 improves the characteristics. Has been done.
【0003】具体的には、特開平3−285209号に
記載されるように、BaTiO3 に対してNb2 O5 、
ZnOおよびCaZrO3 を適量添加することにより誘
電損失を小さくでき、さらにMnOの添加により誘電損
失がさらに改善されることが記載されている。Specifically, as described in JP-A-3-285209, as compared with BaTiO 3 , Nb 2 O 5 ,
It is described that the dielectric loss can be reduced by adding ZnO and CaZrO 3 in appropriate amounts, and the addition of MnO further improves the dielectric loss.
【0004】一方、積層型磁器コンデンサは、その小型
化が進むにつれて、誘電体層の厚みが小さくなる傾向に
あるが、誘電体層の厚みが小さくなると、電界の影響を
大きく受けるので誘電損失が増大する傾向にある。その
ために積層型磁器コンデンサに使用する誘電体材料は、
さらに誘電損失が小さいことが要求され、昨今、誘電体
層が数μmにまでなると誘電体材料の誘電損失(tan
δ)は、0.6%以下であることが必要とされる。ま
た、最近では、特性の経時的劣化の小さいことも望まれ
ている。On the other hand, in the multilayer ceramic capacitor, the thickness of the dielectric layer tends to become smaller as the size of the multilayer ceramic capacitor becomes smaller. It tends to increase. Therefore, the dielectric material used for the multilayer ceramic capacitor is
Further, it is required that the dielectric loss is small, and in recent years, when the dielectric layer reaches several μm, the dielectric loss (tan) of the dielectric material is increased.
δ) is required to be 0.6% or less. Further, recently, it is desired that the deterioration of characteristics with time is small.
【0005】[0005]
【発明が解決しようとする問題点】しかしながら、上記
先行技術に記載される誘電体磁器組成物によれば、その
ほとんどが、誘電損失が0.6%を越えるものであり、
この目的には合わない。一部に0.6%以下の組成物も
記載されているが、いずれも比誘電率が3000以下と
小さいためにコンデンサの小型化に限界がある。However, most of the dielectric ceramic compositions described in the above prior art have a dielectric loss of more than 0.6%,
It doesn't fit this purpose. Although the composition of 0.6% or less is also described in some of them, there is a limit to miniaturization of the capacitor because all of them have a small relative dielectric constant of 3000 or less.
【0006】上記先行技術に代表されるようにBaTi
O3 を主成分とする従来の誘電体磁器組成物では、誘電
損失が大きく、小型化に適用することができず、ある程
度の誘電損失の低減ができても比誘電率が小さくなると
いう問題があった。また、コンデンサの長寿命化につい
て十分検討されていないのが現状であった。As represented by the above-mentioned prior art, BaTi
The conventional dielectric ceramic composition containing O 3 as a main component has a large dielectric loss, cannot be applied to downsizing, and has a problem that the relative dielectric constant becomes small even if the dielectric loss can be reduced to some extent. there were. In addition, the current situation is that sufficient consideration has not been given to extending the life of capacitors.
【0007】よって、本発明の目的は、高い比誘電率を
有しつつ誘電損失の小さい誘電体磁器組成物を提供する
にある。Therefore, it is an object of the present invention to provide a dielectric ceramic composition having a high relative dielectric constant and a small dielectric loss.
【0008】[0008]
【問題点を解決するための手段】本発明者等は、上記の
目的に対して検討を重ねた結果、誘電体磁器組成物の主
成分であるBaTiO3 のBa、Tiが化学量論組成よ
りもBaを多く含むことにより誘電損失を大きく低減で
き、しかも高温領域での比誘電率の変化を小さく制御で
きるために他の添加物の添加量を小さくし、比誘電率を
大きくできることさらに、組成物中のSi量が高温での
寿命特性に大きく影響を及ぼすことを知見し、本発明に
至った。Means for Solving the Problems The inventors of the present invention have conducted extensive studies on the above-mentioned object, and as a result, have found that Ba and Ti of BaTiO 3 which are the main components of the dielectric ceramic composition have a stoichiometric composition. Also contains a large amount of Ba, so that the dielectric loss can be greatly reduced and the change in the relative permittivity in the high temperature region can be controlled to be small, so that the amount of other additives added can be reduced and the relative permittivity can be increased. The inventors have found that the amount of Si in the material has a great influence on the life characteristics at high temperatures, and have reached the present invention.
【0009】即ち、本発明の誘電体磁器組成物は、金属
成分として少なくともBa、Ti、Nb、Sm及びZn
を含む複合酸化物からなり、各金属成分の酸化物による
モル比の組成式をaBa1+X TiO3 ・bNb2 O5 ・
cSm2 O3 ・dZnOと表した時、0.9700≦a
≦0.9830、0.0105≦b≦0.0132、
0.0008≦c≦0.0025、0.0050≦d≦
0.0150、0.006≦x≦0.0180およびa
+b+c+d=1を満足することを特徴とするものであ
る。That is, the dielectric ceramic composition of the present invention contains at least Ba, Ti, Nb, Sm and Zn as metal components.
The composition formula of the molar ratio by the oxide of each metal component is aBa 1 + X TiO 3 · bNb 2 O 5 ·.
When expressed as cSm 2 O 3 · dZnO, 0.9700 ≦ a
≤ 0.9830, 0.0105 ≤ b ≤ 0.0132,
0.0008 ≦ c ≦ 0.0025, 0.0050 ≦ d ≦
0.0150, 0.006 ≦ x ≦ 0.0180 and a
It is characterized in that + b + c + d = 1 is satisfied.
【0010】本発明において、Ba1+X TiO3 におけ
るx値を上記範囲に限定したのは、x値が0.006よ
り小さいと磁器の誘電損失が大きくなるとともに、温度
特性が劣化し、0.0180を越えると磁器密度が小さ
くなるからである。In the present invention, the value of x in Ba 1 + X TiO 3 is limited to the above range. When the value of x is less than 0.006, the dielectric loss of the porcelain increases and the temperature characteristics deteriorate. This is because the porcelain density decreases when it exceeds 0.0180.
【0011】また、a、b、cおよびdの各値を上記の
範囲に限定したのは、a値が0.9700より小さいと
誘電損失が大きくなるとともに温度特性が劣化し、0.
9830より大きいと半導体化が生じるためである。ま
た、b値が0.0105より小さいと絶縁抵抗が極めて
小さく、コンデンサの機能を有しなくなり、0.013
2より大きいと比誘電率が小さくなるからである。さら
に、c値が0.0025より大きいと温度特性が劣化す
るためである。d値が0.0050より小さいと誘電損
失が大きいとともに温度特性が劣化し、0.0150よ
り大きいと誘電損失が大きくなる。Further, the values of a, b, c and d are limited to the above ranges, because when the value of a is smaller than 0.9700, the dielectric loss becomes large and the temperature characteristic deteriorates.
This is because if it is larger than 9830, it becomes a semiconductor. Further, when the b value is smaller than 0.0105, the insulation resistance is extremely small, and the function of the capacitor is lost.
This is because if it is larger than 2, the relative dielectric constant becomes small. Furthermore, if the c value is larger than 0.0025, the temperature characteristics deteriorate. When the d value is smaller than 0.0050, the dielectric loss is large and the temperature characteristics are deteriorated, and when the d value is larger than 0.0150, the dielectric loss is large.
【0012】a、b、c、dおよびxの各値のより望ま
しい範囲は、0.9725≦a≦0.9807、0.0
110≦b≦0.0125、0.0008≦c≦0.0
025、0.0075≦d≦0.0125、0.006
≦x≦0.018である。A more desirable range of each value of a, b, c, d and x is 0.9725≤a≤0.9807,0.0.
110 ≦ b ≦ 0.0125, 0.0008 ≦ c ≦ 0.0
025, 0.0075 ≤ d ≤ 0.0125, 0.006
≦ x ≦ 0.018.
【0013】また、本発明によれば、組成物中の不純物
としてのSiの酸化物重量換算量で20ppm以下であ
ることが望ましい。これは、Si量が、20ppmを越
えると高温高電界下で絶縁抵抗が低下する傾向にあるた
めである。Further, according to the present invention, it is desirable that the amount of Si as an impurity in the composition is 20 ppm or less in terms of weight of oxide. This is because when the Si amount exceeds 20 ppm, the insulation resistance tends to decrease under high temperature and high electric field.
【0014】さらに、本発明によれば、組成物中にMn
を実質的に含有しないことが望ましく、不可避不純物と
しての混入を考慮した場合、重量で300ppm以下で
あることが望ましい。Mnは通常、MnOとしてBaT
iO3 に添加することにより誘電損失を低下させたりす
る効果を有するとして多用されるが、本発明によれば、
Mn無添加で誘電損失を十分に低くすることができる。
このような本発明の系によれば、Mnの存在は磁器の寿
命性能を劣化させる要因となることが判明した。即ち、
Mn量を上記の範囲に限定したのは、Mn量が酸化物重
量換算量で300ppmを越えると、高温高電界を付与
した状態で曝されると絶縁抵抗が大きく劣化するためで
ある。Further in accordance with the present invention, the Mn in the composition is
Is substantially not contained, and in consideration of inclusion as an unavoidable impurity, it is preferably 300 ppm or less by weight. Mn is usually BaT as MnO
It is often used as having the effect of lowering the dielectric loss by adding it to iO 3 , but according to the present invention,
The dielectric loss can be sufficiently reduced without adding Mn.
According to such a system of the present invention, the presence of Mn has been found to be a factor that deteriorates the life performance of porcelain. That is,
The reason for limiting the Mn amount to the above range is that if the Mn amount exceeds 300 ppm in terms of oxide weight, the insulation resistance is greatly deteriorated when exposed to a high temperature and high electric field.
【0015】本発明の誘電体磁器組成物は、Ba、T
i、Nb、Sm、Znの各金属元素の酸化物、あるいは
BaOとTiO2 とを混合後、仮焼粉砕した複合酸化物
粉末などを用いて、組成物の組成が前述した範囲になる
ように秤量混合した粉末を、あるいは960〜1080
℃の酸化性雰囲気中で仮焼後粉砕した粉末を所望の成形
手段、例えば、ドクターブレード法、金型プレスなどの
方法により成形する。積層型磁器コンデンサを作成する
場合にはシート状に成形すればよい。The dielectric ceramic composition of the present invention comprises Ba, T
The oxide of each metal element of i, Nb, Sm, and Zn, or the mixed oxide powder of BaO and TiO 2 which is calcined and pulverized is used to adjust the composition to the above range. Weighed and mixed powder, or 960 to 1080
The powder calcinated after calcination in an oxidizing atmosphere at ℃ is molded by a desired molding means such as a doctor blade method or a die press. When producing a laminated ceramic capacitor, it may be formed into a sheet.
【0016】かかる成形体は1300〜1370℃の酸
化性雰囲気中で焼成することにより磁器を作製すること
ができるが、積層型磁器コンデンサを作製する場合に
は、例えば、シート状成形体の表面にPdなどの内部電
極形成用のペーストを塗布し、積層した後に焼成すれば
よい。The molded body can be made into a porcelain by firing it in an oxidizing atmosphere at 1300 to 1370 ° C. In the case of producing a laminated porcelain capacitor, for example, the surface of a sheet-like formed body is formed. The internal electrode forming paste such as Pd may be applied, laminated, and fired.
【0017】また、本発明によれば、組成物中のSi量
を低減することが重要であるが、Siは、主としてチタ
ン酸バリウム中の不純物や混合、粉砕時のメディアから
混入する場合があるために、最終磁器中のSiの合量が
20ppmを越えないように高純度の原料粉末を用いる
ことおよび製造工程から混入しないようにすることが必
要である。Further, according to the present invention, it is important to reduce the amount of Si in the composition, but Si may be mixed mainly from impurities in barium titanate or from media during mixing or crushing. Therefore, it is necessary to use a high-purity raw material powder so that the total amount of Si in the final porcelain does not exceed 20 ppm, and to prevent it from being mixed from the manufacturing process.
【0018】[0018]
【作用】本発明によれば、チタン酸バリウムとしてBa
の量の化学量論組成よりも多く存在させることにより、
磁器全体の誘電損失を大幅に減少させることができる。According to the present invention, Ba is used as barium titanate.
The presence of more than the stoichiometric composition of
The dielectric loss of the whole porcelain can be greatly reduced.
【0019】また、チタン酸バリウムの上記の改良によ
り、磁器の誘電損失を低下させるために添加するNb2
O5 の量を少なくすることができ、高い比誘電率を有す
ることになるまた、従来からチタン酸バリウム系におい
て誘電率を高めるためにCaZrO3 を添加されている
が、このCaZrO3 は温度特性を劣化させる。本発明
では、CaZrO3 無添加で高誘電率を有するために温
度特性など他の特性を劣化させることがない。Further, Nb 2 added to reduce the dielectric loss of porcelain by the above-mentioned improvement of barium titanate.
The amount of O 5 can be reduced, high specific will have a dielectric constant Although conventionally been added to CaZrO 3 in order to increase the dielectric constant in the barium titanate from the CaZrO 3 is a temperature characteristic Deteriorate. In the present invention, since CaZrO 3 is not added and has a high dielectric constant, other characteristics such as temperature characteristics are not deteriorated.
【0020】本発明の誘電体磁器組成物によれば、比誘
電率3000以上、絶縁抵抗1×1012Ωcm以上、比
誘電率の温度特性(−55℃〜+125℃)が25℃を
基準にして±7.5%以内、エージング率2%/dec
ade以下の優れた誘電特性が得られる。According to the dielectric porcelain composition of the present invention, the relative dielectric constant is 3000 or more, the insulation resistance is 1 × 10 12 Ωcm or more, and the temperature characteristic of the relative dielectric constant (−55 ° C. to + 125 ° C.) is 25 ° C. as a reference. Within ± 7.5%, aging rate 2% / dec
An excellent dielectric property equal to or less than ade is obtained.
【0021】これにより、積層型磁器コンデンサにおい
て誘電層の厚みを5μm程度に薄くしても誘電損失が小
さく、高誘電率であるためにコンデンサの小型化を行う
ことができる。As a result, even if the thickness of the dielectric layer in the laminated ceramic capacitor is reduced to about 5 μm, the dielectric loss is small and the dielectric constant is high, so that the capacitor can be miniaturized.
【0022】[0022]
【実施例】実施例1 しゅう酸塩法により化学量論組成
よりBa過剰側に0.6〜1.8原子%ずれた組成のし
ゅう酸バリウムチタノールを合成し、950〜1020
℃で仮焼してチタン酸バリウム粉末を得てこれを主原料
とした。この主原料にNb2O5 、Sm2 O3 およびZ
nO粉末を用いて、組成が表1および表2の組成となる
ように秤量混合し、ボールミルで混合し、酢酸ビニル樹
脂を粉末100重量部に対して1重量部添加し顆粒に
し、12mmφ×約1.0mm厚みの円板状に加圧成形
した後、大気中で1300〜1370℃で2時間焼成し
た。Example 1 Barium titanol oxalate having a composition deviated from the stoichiometric composition by 0.6 to 1.8 atomic% on the Ba excess side by the oxalate method was synthesized, and 950 to 1020 was synthesized.
It was calcined at ℃ to obtain barium titanate powder, which was used as the main raw material. Nb 2 O 5 , Sm 2 O 3 and Z
Using nO powder, the ingredients were weighed and mixed so as to have the compositions shown in Table 1 and Table 2, mixed with a ball mill, and 1 part by weight of vinyl acetate resin was added to 100 parts by weight of the powder to make granules. After pressure-molding into a disc having a thickness of 1.0 mm, it was fired in the atmosphere at 1300 to 1370 ° C. for 2 hours.
【0023】得られた磁器に対して嵩密度を測定した
後、銀電極を付与し円板コンデンサを作成し評価試料と
した。そして、1Vrms、1.0KHzの条件で静電
容量及び誘電損失(tanδ)を測定した。また、50
0Vの直流電圧を1分間印加し、絶縁抵抗計にて絶縁抵
抗を測定した。さらに、−55℃〜+125℃の範囲で
静電容量を測定し、25℃の値を基準にして−55℃、
+85℃、+125℃の値から変化率を計算した。その
結果を表1に示した。After measuring the bulk density of the obtained porcelain, a silver electrode was provided to prepare a disk capacitor, which was used as an evaluation sample. Then, the capacitance and the dielectric loss (tan δ) were measured under the conditions of 1 Vrms and 1.0 KHz. Also, 50
A direct current voltage of 0 V was applied for 1 minute, and the insulation resistance was measured with an insulation resistance meter. Furthermore, the electrostatic capacity was measured in the range of -55 ° C to + 125 ° C, and the value of 25 ° C was used as a reference at -55 ° C,
The rate of change was calculated from the values at + 85 ° C and + 125 ° C. The results are shown in Table 1.
【0024】なお表1の試料No.4について、150℃
で1時間熱処理した後、1時間後の静電容量値を基準に
して常温中に100時間放置した直後の静電容量値から
ディケート当たりのエージング率を算出した。尚、比誘
電率は静電容量からAg電極の直径及び磁器厚さから算
出した。これらの測定値及び計算値を表1に記載した。For sample No. 4 in Table 1, 150 ° C.
After heat-treating for 1 hour, the aging rate per delicate was calculated from the capacitance value immediately after standing for 100 hours at room temperature based on the capacitance value after 1 hour. The relative dielectric constant was calculated from the capacitance and the diameter of the Ag electrode and the thickness of the porcelain. These measured values and calculated values are shown in Table 1.
【0025】[0025]
【表1】 [Table 1]
【0026】表1に示すように、a、b、c、dおよび
x値が本発明の範囲を満足する試料は、いずれも高密度
を有し、3000以上の高い比誘電率を示し、0.6%
以下の低い誘電損失、1×1012Ωcmの高い絶縁抵
抗、さらに±7.5%以内の安定した温度特性を有する
ものであった。As shown in Table 1, all the samples whose a, b, c, d and x values satisfy the range of the present invention have a high density and a high relative dielectric constant of 3,000 or more, and 0. .6%
It had the following low dielectric loss, high insulation resistance of 1 × 10 12 Ωcm, and stable temperature characteristics within ± 7.5%.
【0027】実施例2 実施例1において、Si量の異
なる原料粉末を用いて、Ba、Ti、Nb、Sm、Zn
が試料No.4を満足するように秤量混合後、実施例1と
同様にして磁器を作製した。得られた磁器に対してIC
P発光分光分析により磁器中のSi量を測定し表2に示
した。Example 2 In Example 1, raw material powders having different Si contents were used, and Ba, Ti, Nb, Sm and Zn were used.
Was weighed and mixed so as to satisfy Sample No. 4, and a porcelain was manufactured in the same manner as in Example 1. IC for the obtained porcelain
The amount of Si in the porcelain was measured by P emission spectroscopy and is shown in Table 2.
【0028】得られた磁器を直径10mm、厚み約0.
25mmに加工し、かかる磁器に30〜31KV/mm
の電位傾度をもつように直流電圧を印加し、125〜1
27℃の恒温槽中に48時間保存した。そして、試験前
後の絶縁抵抗値(500VDC、1分値)において、試
験後の絶縁抵抗値が試験前のそれの1/4以下に低下し
た場合を劣化とみなし、その割合を表2に示した。The obtained porcelain had a diameter of 10 mm and a thickness of about 0.
Processed to 25mm, 30 ~ 31KV / mm on such porcelain
DC voltage is applied so that it has a potential gradient of
It was stored for 48 hours in a constant temperature bath at 27 ° C. Then, in the insulation resistance value before and after the test (500 VDC, 1 minute value), when the insulation resistance value after the test decreased to ¼ or less of that before the test, it was considered as deterioration, and the ratio is shown in Table 2. .
【0029】[0029]
【表2】 [Table 2]
【0030】表2の結果によれば、Siの量が30pp
mを越えるといずれも絶縁抵抗の低下が観測された。ま
た同様にして表1の他の本発明試料について同様な試験
を行ったところ、表2と同様な試験結果を得、かかる傾
向が本発明の系全般にあることを確認した。According to the results of Table 2, the amount of Si is 30 pp.
A decrease in insulation resistance was observed in all cases where m was exceeded. Similarly, when the same test was performed on the other samples of the present invention in Table 1, the same test results as in Table 2 were obtained, and it was confirmed that this tendency is present in all the systems of the present invention.
【0031】実施例3試料No.4の組成系において、原
料中のSi量が1.2ppm,MnO量が0.5ppm
の原料組成物に対してMnO2 粉末を70〜420pp
m添加して秤量混合後、実施例1と同様にして磁器を作
製した。得られた磁器を基に実施例2と同様にして高温
高電圧下での絶縁抵抗の劣化について調べ、劣化した割
合を表3に示した。Example 3 In the composition system of sample No. 4, the amount of Si in the raw material was 1.2 ppm and the amount of MnO was 0.5 ppm.
70-420 pp of MnO 2 powder to the raw material composition
After adding m and weighing and mixing, a porcelain was produced in the same manner as in Example 1. Based on the obtained porcelain, deterioration of insulation resistance under high temperature and high voltage was examined in the same manner as in Example 2, and the deterioration rate is shown in Table 3.
【0032】[0032]
【表3】 [Table 3]
【0033】表3によれば、Mn量が300ppmを越
えると、いずれも絶縁抵抗の低下が観測され、Mn量を
300ppm以下に制御することにより高温高電圧下で
の特性の劣化が抑制されることがわかった。また、表1
のその他の本発明の試料についても同様な実験を行った
ところ、表3と同様な結果を得た。According to Table 3, when the Mn amount exceeds 300 ppm, a decrease in insulation resistance is observed in all cases, and by controlling the Mn amount to 300 ppm or less, deterioration of characteristics under high temperature and high voltage is suppressed. I understood it. Also, Table 1
When the same experiment was performed on the other samples of the present invention, the same results as in Table 3 were obtained.
【0034】[0034]
【発明の効果】以上、詳述した通り、本発明の誘電体磁
器組成物によれば、チタン酸バリウムとしてBaの量の
化学量論組成よりも多く存在させるとともに、Sm、N
bおよびZn量を特定の範囲に制御することにより、磁
器全体の誘電損失を大幅に減少させることができ、比誘
電率3000以上、絶縁抵抗1×1012Ωcm以上、比
誘電率の温度特性(−55℃〜+125℃)が±7.5
%以内、嵩密度5.80g/cm3 以上の高密度の誘電
特性に優れた磁器を得ることができる。As described above in detail, according to the dielectric ceramic composition of the present invention, the barium titanate is allowed to exist in a larger amount than the stoichiometric composition of Ba, and Sm, N
By controlling the amounts of b and Zn within a specific range, the dielectric loss of the entire porcelain can be significantly reduced. The relative dielectric constant is 3000 or more, the insulation resistance is 1 × 10 12 Ωcm or more, and the temperature characteristic of the relative dielectric constant ( -55 ° C to + 125 ° C) ± 7.5
%, And a bulk density of 5.80 g / cm 3 or more, a high-density porcelain excellent in dielectric properties can be obtained.
【0035】また、Si量、Mn量を最小限小さくする
ことにより磁器の高温高電界下での特性劣化を防止し、
磁器特性の長寿命化を達成することができる。Further, by minimizing the Si content and the Mn content, the characteristic deterioration of the porcelain under high temperature and high electric field can be prevented,
It is possible to extend the life of porcelain characteristics.
【0036】これにより、積層型磁器コンデンサにおい
て誘電層の厚みを5μm程度に薄くしても誘電損失が小
さく、高誘電率であるためにコンデンサの小型化を行う
ことができる。As a result, even if the thickness of the dielectric layer in the laminated ceramic capacitor is reduced to about 5 μm, the dielectric loss is small and the dielectric constant is high, so that the capacitor can be miniaturized.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H01B 3/12 303 C04B 35/46 H01G 4/12 358 ─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. 7 , DB name) H01B 3/12 303 C04B 35/46 H01G 4/12 358
Claims (2)
i、Nb、Sm及びZnを含む複合金属酸化物からな
り、各金属成分の酸化物によるモル比の組成式をaBa
1+XTiO3・bNb2O5・cSm2O3・dZnOと表し
た時、 0.9700≦a≦0.9830 0.0105≦b≦0.01320.0008 ≦c≦0.0025 0.0050≦d≦0.0150 0.006≦x≦0.018 a+b+c+d=1を満足することを特徴とする誘電体
磁器組成物。1. Ba, T as at least a metal component
It is composed of a complex metal oxide containing i, Nb, Sm, and Zn, and the composition formula of the molar ratio by the oxide of each metal component is aBa
When expressed as 1 + X TiO 3 · bNb 2 O 5 · cSm 2 O 3 · dZnO: 0.9700 ≦ a ≦ 0.9830 0.0105 ≦ b ≦ 0.0132 0.0008 ≦ c ≦ 0.00250 0.0050 ≦ d ≦ 0.0150 0.006 ≦ x ≦ 0.018 a + b + c + d = 1 is satisfied, a dielectric ceramic composition.
m及びZnを含む複合金属酸化物であって、該組成物中
のSiの酸化物重量換算量が20ppm以下、MnのM
nO2 重量換算量が300ppm以下であることを特徴
とする請求項1記載の誘電体磁器組成物。2. Ba, Ti, Nb, S as a metal component
A composite metal oxide containing m and Zn, wherein the oxide weight conversion of Si in the composition is 20 ppm or less, and M of Mn.
The dielectric ceramic composition according to claim 1, wherein the weight-converted amount of nO 2 is 300 ppm or less.
Priority Applications (1)
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JP29317092A JP3469910B2 (en) | 1992-10-30 | 1992-10-30 | Dielectric porcelain composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29317092A JP3469910B2 (en) | 1992-10-30 | 1992-10-30 | Dielectric porcelain composition |
Publications (2)
Publication Number | Publication Date |
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JPH06150717A JPH06150717A (en) | 1994-05-31 |
JP3469910B2 true JP3469910B2 (en) | 2003-11-25 |
Family
ID=17791323
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JP29317092A Expired - Fee Related JP3469910B2 (en) | 1992-10-30 | 1992-10-30 | Dielectric porcelain composition |
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JP (1) | JP3469910B2 (en) |
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1992
- 1992-10-30 JP JP29317092A patent/JP3469910B2/en not_active Expired - Fee Related
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